JP2013522905A - 改良型多接合led - Google Patents
改良型多接合led Download PDFInfo
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- JP2013522905A JP2013522905A JP2013500040A JP2013500040A JP2013522905A JP 2013522905 A JP2013522905 A JP 2013522905A JP 2013500040 A JP2013500040 A JP 2013500040A JP 2013500040 A JP2013500040 A JP 2013500040A JP 2013522905 A JP2013522905 A JP 2013522905A
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- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000000903 blocking effect Effects 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 7
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
【選択図】図3
Description
Claims (13)
- 基板と、
前記基板上に堆積される発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントを前記第2セグメントに接続する直列接続電極と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
を含む光源であって、
前記障壁が、前記発光構造を貫通して前記第1阻止ダイオードの中に延びる、
光源。 - 前記基板が、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、前記障壁が、前記発光構造を貫通して延びるトレンチであって前記遷移層内にその終端があるトレンチを含む、請求項1に記載の光源。
- 前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードをさらに含む、請求項1に記載の光源。
- 前記直列接続電極が、前記障壁を跨ぐ複数の絶縁された導体を含む、請求項1に記載の光源。
- 前記障壁が、前記遷移層内を移動する光を実質的に遮断しない、請求項2に記載の光源。
- 前記直列接続電極が前記トレンチ内に堆積された導電材料の層を含み、前記トレンチは、前記導電材料の層が、前記トレンチ内に曝露される前記発光構造の壁面と直接接触することを防止する絶縁層を有する、請求項2に記載の光源。
- 前記発光構造の上に載る前記直列接続電極の一部分の下部に位置する絶縁層を含む、請求項2に記載の光源。
- 前記半導体材料がGaN材料族からなる材料を含む、請求項1に記載の光源。
- 光源の製造方法であり、
基板上に第1導電型の半導体材料を含む遷移層を堆積するステップと、
前記遷移層の上に逆の導電型の阻止ダイオード層を堆積するステップと、
前記阻止ダイオード層の上に発光構造を堆積するステップと、
前記発光構造を第1および第2セグメントに分割する障壁を生成するステップと、
前記第1および第2基板を直列に接続する直列接続電極を堆積するステップと、
を含む方法であって、前記障壁は、前記発光構造を貫通して前記第1阻止ダイオード層の中に延び、前記阻止ダイオード層は、前記発光構造が光を発生している時に前記発光構造から前記基板に電流が流れるのを防止する、方法。 - 前記障壁が、前記発光構造を貫通して前記遷移層には延びるが前記基板には達しないトレンチをエッチングすることによって生成される、請求項9に記載の方法。
- 前記直列接続電極を堆積するステップが、前記トレンチ内に絶縁層を堆積するステップと、前記トレンチにおいて前記絶縁層の上部に導電材料の層を堆積するステップとを含み、前記絶縁層は、前記導電材料の層が、前記トレンチ内に曝露される前記発光構造の壁面と直接接触するのを防止する、請求項10に記載の方法。
- 前記絶縁層が、前記発光構造の上に載る前記直列接続電極の一部分の下部に位置する、請求項10に記載の方法。
- 前記基板の半導体層が前記反対の導電型の複数の層を含み、前記複数の層は、前記発光構造が光を発生している時に直列に接続された複数の逆バイアスダイオードを含むように配置される、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/725,424 | 2010-03-16 | ||
US12/725,424 US8084775B2 (en) | 2010-03-16 | 2010-03-16 | Light sources with serially connected LED segments including current blocking diodes |
PCT/US2010/062086 WO2011115654A2 (en) | 2010-03-16 | 2010-12-23 | Improved multi-junction led |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013522905A true JP2013522905A (ja) | 2013-06-13 |
JP2013522905A5 JP2013522905A5 (ja) | 2013-11-28 |
JP5841588B2 JP5841588B2 (ja) | 2016-01-13 |
Family
ID=42666643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013500040A Expired - Fee Related JP5841588B2 (ja) | 2010-03-16 | 2010-12-23 | 改良型多接合led |
Country Status (7)
Country | Link |
---|---|
US (2) | US8084775B2 (ja) |
EP (1) | EP2548234A4 (ja) |
JP (1) | JP5841588B2 (ja) |
KR (1) | KR20130036191A (ja) |
CN (1) | CN102770976B (ja) |
TW (1) | TWI515919B (ja) |
WO (1) | WO2011115654A2 (ja) |
Families Citing this family (20)
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US9443903B2 (en) | 2006-06-30 | 2016-09-13 | Cree, Inc. | Low temperature high strength metal stack for die attachment |
US8698184B2 (en) * | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
TW201242122A (en) * | 2011-04-15 | 2012-10-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
KR101303168B1 (ko) * | 2011-07-26 | 2013-09-09 | 안상정 | 반도체 발광부 연결체 |
TW201310706A (zh) * | 2011-08-22 | 2013-03-01 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
US8581267B2 (en) * | 2011-11-09 | 2013-11-12 | Toshiba Techno Center Inc. | Series connected segmented LED |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN103367384B (zh) * | 2012-03-30 | 2018-04-03 | 晶元光电股份有限公司 | 发光二极管元件 |
CN103378233B (zh) * | 2012-04-16 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及使用该晶粒的发光二极管封装结构 |
CN102820316B (zh) * | 2012-08-30 | 2016-04-27 | 北京工业大学 | 一种led显示微阵列及其制备方法 |
US9093627B2 (en) * | 2012-12-21 | 2015-07-28 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
CN105074942A (zh) * | 2013-02-25 | 2015-11-18 | 首尔伟傲世有限公司 | 具有多个发光元件的发光二极管及其制造方法 |
KR20160016361A (ko) * | 2014-08-05 | 2016-02-15 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
BR102015027316B1 (pt) | 2014-10-31 | 2021-07-27 | Nichia Corporation | Dispositivo emissor de luz e sistema de lâmpada frontal de farol de acionamento adaptativo |
CN107223285B (zh) * | 2015-02-13 | 2020-01-03 | 首尔伟傲世有限公司 | 发光元件以及发光二极管 |
KR101725193B1 (ko) * | 2015-08-19 | 2017-04-11 | 주식회사 썬다이오드코리아 | 디스플레이 구동 방법 |
CN105702821B (zh) * | 2016-03-29 | 2018-01-30 | 苏州晶湛半导体有限公司 | 半导体发光器件及其制造方法 |
KR102579311B1 (ko) | 2018-07-13 | 2023-09-15 | 삼성전자주식회사 | 발광 소자, 발광 소자의 제조 방법 및 발광 소자를 포함하는 디스플레이 장치 |
CN111106058A (zh) * | 2019-12-26 | 2020-05-05 | 晶能光电(江西)有限公司 | 高压led芯片及其制备方法 |
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-
2010
- 2010-03-16 US US12/725,424 patent/US8084775B2/en not_active Expired - Fee Related
- 2010-12-23 WO PCT/US2010/062086 patent/WO2011115654A2/en active Application Filing
- 2010-12-23 JP JP2013500040A patent/JP5841588B2/ja not_active Expired - Fee Related
- 2010-12-23 EP EP10848128.4A patent/EP2548234A4/en not_active Withdrawn
- 2010-12-23 CN CN201080064139.2A patent/CN102770976B/zh not_active Expired - Fee Related
- 2010-12-23 KR KR1020127023555A patent/KR20130036191A/ko active IP Right Grant
- 2010-12-30 TW TW099146849A patent/TWI515919B/zh not_active IP Right Cessation
-
2011
- 2011-11-11 US US13/294,984 patent/US20120058584A1/en not_active Abandoned
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JP2008505478A (ja) * | 2004-06-30 | 2008-02-21 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法並びにこれを用いた発光装置 |
JP2006073815A (ja) * | 2004-09-02 | 2006-03-16 | Rohm Co Ltd | 半導体発光装置 |
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Also Published As
Publication number | Publication date |
---|---|
WO2011115654A3 (en) | 2012-01-26 |
EP2548234A4 (en) | 2016-01-20 |
US20100219431A1 (en) | 2010-09-02 |
TWI515919B (zh) | 2016-01-01 |
US8084775B2 (en) | 2011-12-27 |
WO2011115654A2 (en) | 2011-09-22 |
CN102770976B (zh) | 2015-10-07 |
CN102770976A (zh) | 2012-11-07 |
JP5841588B2 (ja) | 2016-01-13 |
TW201133930A (en) | 2011-10-01 |
US20120058584A1 (en) | 2012-03-08 |
EP2548234A2 (en) | 2013-01-23 |
KR20130036191A (ko) | 2013-04-11 |
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