JP5841588B2 - 改良型多接合led - Google Patents
改良型多接合led Download PDFInfo
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- JP5841588B2 JP5841588B2 JP2013500040A JP2013500040A JP5841588B2 JP 5841588 B2 JP5841588 B2 JP 5841588B2 JP 2013500040 A JP2013500040 A JP 2013500040A JP 2013500040 A JP2013500040 A JP 2013500040A JP 5841588 B2 JP5841588 B2 JP 5841588B2
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- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Description
Claims (10)
- 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層と前記第2セグメントの前記透明電極とを接続する直列接続電極と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードと、
を含む光源であって、
前記基板は、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁は、前記発光構造、前記第1阻止ダイオード及び前記第2阻止ダイオードを貫通して延び、前記遷移層内にその終端があるトレンチを含み、前記遷移層内を移動する光を実質的に遮断せず、
前記直列接続電極は、前記障壁を跨ぐ複数の導体であって、前記トレンチ内に堆積され、前記第2セグメントの発光構造の上方に延在した導電材料の層を含み、
前記導電材料の層が、前記トレンチ内に露出される前記発光構造の壁面と接触することを防止する絶縁層であって、前記障壁に面する前記発光構造の側面をその形状に沿って覆うとともに、前記第2セグメントの発光構造の上方に位置する前記導電材料の層と前記第2導電型半導体層との間に延在し、前記第1セグメントの前記第1導電型半導体層上に、前記直列接続電極を前記第1セグメントの前記第1導電型半導体層に接続するための開口部を有し、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在せず、
前記半導体材料がGaN材料族からなる材料を含む、
光源。 - 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層に接続され、前記第2セグメントの前記透明電極上に延在する直列接続電極と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
を含む光源であって、
前記障壁が、前記発光構造を貫通して前記第1阻止ダイオードの中に延び、
前記直列接続電極は、前記第2セグメントの発光構造の上方に延在した導電材料の層を含み、
前記導電材料の層と前記第2セグメントの発光構造の側面との間に形成された絶縁層であって、前記障壁に面する前記発光構造の側面をその形状に沿って覆うとともに、前記第2セグメントの発光構造の上方に位置する前記導電材料の層と前記第2導電型半導体層との間に延在し、前記第1セグメントの前記第1導電型半導体層上に、前記直列接続電極を前記第1セグメントの前記第1導電型半導体層に接続するための開口部を有し、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在しない、
光源。 - 前記基板が、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁が、前記発光構造及び前記第1阻止ダイオードを貫通して延びるトレンチであって前記遷移層内にその終端があるトレンチを含む、請求項2に記載の光源。 - 前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードをさらに含む、請求項2または3に記載の光源。
- 前記第1阻止ダイオードと前記遷移層との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードをさらに含む、請求項3に記載の光源。
- 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層に接続され、前記第2セグメントの前記透明電極上に延在する直列接続電極と、
前記直列接続電極と前記第2セグメントの発光構造の側面との間に形成された絶縁層であって、前記第2セグメントの発光構造の上方に位置する前記直列接続電極と前記第2導電型半導体層との間に延在する絶縁層と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードと、
を含む光源であって、
前記基板は、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁が、前記発光構造及び前記第1阻止ダイオードを貫通して延びるトレンチであって前記遷移層内にその終端があるトレンチを含み、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在しない、
光源。 - 前記直列接続電極が、前記障壁を跨ぐ複数の導体を含む、請求項2〜6のいずれか1つに記載の光源。
- 前記障壁が、前記遷移層内を移動する光を実質的に遮断しない、請求項3〜7のいずれか1つに記載の光源。
- 前記導電材料の層は、前記トレンチ内に堆積されている、請求項3〜8のいずれか1つに記載の光源。
- 前記半導体材料がGaN材料族からなる材料を含む、請求項3〜9のいずれか1つに記載の光源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/725,424 US8084775B2 (en) | 2010-03-16 | 2010-03-16 | Light sources with serially connected LED segments including current blocking diodes |
US12/725,424 | 2010-03-16 | ||
PCT/US2010/062086 WO2011115654A2 (en) | 2010-03-16 | 2010-12-23 | Improved multi-junction led |
Publications (3)
Publication Number | Publication Date |
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JP2013522905A JP2013522905A (ja) | 2013-06-13 |
JP2013522905A5 JP2013522905A5 (ja) | 2013-11-28 |
JP5841588B2 true JP5841588B2 (ja) | 2016-01-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013500040A Expired - Fee Related JP5841588B2 (ja) | 2010-03-16 | 2010-12-23 | 改良型多接合led |
Country Status (7)
Country | Link |
---|---|
US (2) | US8084775B2 (ja) |
EP (1) | EP2548234A4 (ja) |
JP (1) | JP5841588B2 (ja) |
KR (1) | KR20130036191A (ja) |
CN (1) | CN102770976B (ja) |
TW (1) | TWI515919B (ja) |
WO (1) | WO2011115654A2 (ja) |
Families Citing this family (20)
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US8698184B2 (en) * | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
US9443903B2 (en) | 2006-06-30 | 2016-09-13 | Cree, Inc. | Low temperature high strength metal stack for die attachment |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
TW201242122A (en) * | 2011-04-15 | 2012-10-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
KR101303168B1 (ko) * | 2011-07-26 | 2013-09-09 | 안상정 | 반도체 발광부 연결체 |
TW201310706A (zh) * | 2011-08-22 | 2013-03-01 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
US8581267B2 (en) * | 2011-11-09 | 2013-11-12 | Toshiba Techno Center Inc. | Series connected segmented LED |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN103367384B (zh) * | 2012-03-30 | 2018-04-03 | 晶元光电股份有限公司 | 发光二极管元件 |
CN103378233B (zh) * | 2012-04-16 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及使用该晶粒的发光二极管封装结构 |
CN102820316B (zh) * | 2012-08-30 | 2016-04-27 | 北京工业大学 | 一种led显示微阵列及其制备方法 |
US9093627B2 (en) * | 2012-12-21 | 2015-07-28 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
CN105074942A (zh) * | 2013-02-25 | 2015-11-18 | 首尔伟傲世有限公司 | 具有多个发光元件的发光二极管及其制造方法 |
KR20160016361A (ko) * | 2014-08-05 | 2016-02-15 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
BR102015027316B1 (pt) | 2014-10-31 | 2021-07-27 | Nichia Corporation | Dispositivo emissor de luz e sistema de lâmpada frontal de farol de acionamento adaptativo |
CN110690242B (zh) * | 2015-02-13 | 2023-06-30 | 首尔伟傲世有限公司 | 发光元件 |
KR101725193B1 (ko) * | 2015-08-19 | 2017-04-11 | 주식회사 썬다이오드코리아 | 디스플레이 구동 방법 |
CN105702821B (zh) * | 2016-03-29 | 2018-01-30 | 苏州晶湛半导体有限公司 | 半导体发光器件及其制造方法 |
KR102579311B1 (ko) | 2018-07-13 | 2023-09-15 | 삼성전자주식회사 | 발광 소자, 발광 소자의 제조 방법 및 발광 소자를 포함하는 디스플레이 장치 |
CN111106058A (zh) * | 2019-12-26 | 2020-05-05 | 晶能光电(江西)有限公司 | 高压led芯片及其制备方法 |
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DE19640003B4 (de) * | 1996-09-27 | 2005-07-07 | Siemens Ag | Halbleitervorrichtung und Verfahren zu dessen Herstellung |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
EP2149907A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
US7213942B2 (en) * | 2002-10-24 | 2007-05-08 | Ac Led Lighting, L.L.C. | Light emitting diodes for high AC voltage operation and general lighting |
EP1700344B1 (en) * | 2003-12-24 | 2016-03-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light emitting device and lighting module |
EP2144286A3 (en) * | 2004-06-30 | 2011-03-30 | Seoul Opto Device Co., Ltd. | Light emitting element with a plurality of light emitting diodes bonded, method of manufacturing the same, and light emitting device using the same |
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KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
CN101270915B (zh) * | 2008-04-18 | 2013-02-13 | 周万杰 | 具有下旋式燃烧室的组合式燃浆锅炉 |
TW201011890A (en) * | 2008-09-04 | 2010-03-16 | Formosa Epitaxy Inc | Alternating current light emitting device |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
-
2010
- 2010-03-16 US US12/725,424 patent/US8084775B2/en not_active Expired - Fee Related
- 2010-12-23 EP EP10848128.4A patent/EP2548234A4/en not_active Withdrawn
- 2010-12-23 CN CN201080064139.2A patent/CN102770976B/zh not_active Expired - Fee Related
- 2010-12-23 WO PCT/US2010/062086 patent/WO2011115654A2/en active Application Filing
- 2010-12-23 JP JP2013500040A patent/JP5841588B2/ja not_active Expired - Fee Related
- 2010-12-23 KR KR1020127023555A patent/KR20130036191A/ko active IP Right Grant
- 2010-12-30 TW TW099146849A patent/TWI515919B/zh not_active IP Right Cessation
-
2011
- 2011-11-11 US US13/294,984 patent/US20120058584A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120058584A1 (en) | 2012-03-08 |
EP2548234A2 (en) | 2013-01-23 |
CN102770976B (zh) | 2015-10-07 |
TWI515919B (zh) | 2016-01-01 |
US8084775B2 (en) | 2011-12-27 |
JP2013522905A (ja) | 2013-06-13 |
TW201133930A (en) | 2011-10-01 |
WO2011115654A2 (en) | 2011-09-22 |
WO2011115654A3 (en) | 2012-01-26 |
KR20130036191A (ko) | 2013-04-11 |
CN102770976A (zh) | 2012-11-07 |
EP2548234A4 (en) | 2016-01-20 |
US20100219431A1 (en) | 2010-09-02 |
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