TW200632593A - Lithographic rinse solution and resist-pattern forming method using the same - Google Patents

Lithographic rinse solution and resist-pattern forming method using the same

Info

Publication number
TW200632593A
TW200632593A TW094143452A TW94143452A TW200632593A TW 200632593 A TW200632593 A TW 200632593A TW 094143452 A TW094143452 A TW 094143452A TW 94143452 A TW94143452 A TW 94143452A TW 200632593 A TW200632593 A TW 200632593A
Authority
TW
Taiwan
Prior art keywords
rinse solution
rinse
provides
solution
lithographic
Prior art date
Application number
TW094143452A
Other languages
English (en)
Other versions
TWI327683B (en
Inventor
Yoshihiro Sawada
Jun Koshiyama
Kazumasa Wakiya
Atsushi Miyamoto
Hidekazu Tajima
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200632593A publication Critical patent/TW200632593A/zh
Application granted granted Critical
Publication of TWI327683B publication Critical patent/TWI327683B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094143452A 2004-12-09 2005-12-08 Lithographic rinse solution and resist-pattern forming method using same TWI327683B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004357460A JP4585299B2 (ja) 2004-12-09 2004-12-09 リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200632593A true TW200632593A (en) 2006-09-16
TWI327683B TWI327683B (en) 2010-07-21

Family

ID=36584779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143452A TWI327683B (en) 2004-12-09 2005-12-08 Lithographic rinse solution and resist-pattern forming method using same

Country Status (4)

Country Link
US (1) US7897325B2 (zh)
JP (1) JP4585299B2 (zh)
KR (1) KR100841194B1 (zh)
TW (1) TWI327683B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI448517B (zh) * 2007-04-09 2014-08-11 Az Electronic Mat Ip Japan Kk 含有內醯胺供塗覆光阻圖案之組合物
TWI502064B (zh) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution
CN111208716A (zh) * 2018-11-21 2020-05-29 台湾积体电路制造股份有限公司 微影方法

Families Citing this family (9)

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JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
US20110159447A1 (en) * 2009-12-25 2011-06-30 Tokyo Ohka Kogyo Co., Ltd. Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography
JP5591623B2 (ja) * 2010-08-13 2014-09-17 ＡｚエレクトロニックマテリアルズＩｐ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
KR101925998B1 (ko) * 2011-12-22 2018-12-07 엘지디스플레이 주식회사 유기전계 발광표시장치 및 그 제조 방법
US9097977B2 (en) 2012-05-15 2015-08-04 Tokyo Electron Limited Process sequence for reducing pattern roughness and deformity
KR101993360B1 (ko) 2012-08-08 2019-06-26 삼성전자주식회사 포토 리소그래피용 린스액
CN114080570A (zh) * 2019-07-08 2022-02-22 默克专利股份有限公司 用于移除边缘保护层及残余金属硬掩模组分的冲洗剂及其使用方法
CN112457930A (zh) * 2019-09-06 2021-03-09 福吉米株式会社 表面处理组合物、表面处理组合物的制造方法、表面处理方法和半导体基板的制造方法
JP7495283B2 (ja) * 2019-09-06 2024-06-04 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法

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US4171974A (en) * 1978-02-15 1979-10-23 Polychrome Corporation Aqueous alkali developable negative working lithographic printing plates
JPS57164984A (en) * 1981-04-06 1982-10-09 Metsuku Kk Exfoliating solution for tin or tin alloy
US4704234A (en) * 1983-01-17 1987-11-03 American Cyanamid Company Compositions comprising imidazole, pyrazole or derivatives thereof for removing undesirable organic matter from a surface
WO1991005289A1 (en) * 1989-09-29 1991-04-18 Eastman Kodak Company Rinse bath for use in photographic processing
US5489433A (en) * 1991-01-04 1996-02-06 Safe-Tee Chemical Products Company Environmentally safe insecticide
US5236746A (en) * 1991-04-15 1993-08-17 Ciba-Geigy Corporation Curtain coating process for producing thin photoimageable coatings
JPH07142349A (ja) * 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
JP2950407B2 (ja) 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法
US5689012A (en) * 1996-07-18 1997-11-18 Arco Chemical Technology, L.P. Continuous preparation of low unsaturation polyoxyalkylene polyether polyols with continuous additon of starter
EP0909798B1 (en) * 1997-03-25 2005-11-09 Seiko Epson Corporation Inks for ink-jet recording
US6815151B2 (en) * 1997-09-05 2004-11-09 Tokyo Ohika Kogyo Co., Ltd. Rinsing solution for lithography and method for processing substrate with the use of the same
US6225030B1 (en) * 1998-03-03 2001-05-01 Tokyo Ohka Kogyo Co., Ltd. Post-ashing treating method for substrates
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
JP2000250229A (ja) * 1999-02-24 2000-09-14 Nec Corp フォトレジスト膜の現像方法
JP2001023893A (ja) * 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
US6214958B1 (en) * 1999-07-21 2001-04-10 Arco Chemical Technology, L.P. Process for preparing comb-branched polymers
JP2001117241A (ja) * 1999-10-21 2001-04-27 Daicel Chem Ind Ltd リソグラフィー用リンス液
JP2001222118A (ja) * 1999-12-01 2001-08-17 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液およびこれを用いた基板の処理方法
JP3868686B2 (ja) 1999-12-03 2007-01-17 東京応化工業株式会社 ディフェクトの発生を抑えたホトレジストパターンの形成方法およびディフェクト低減用現像液
JP4694686B2 (ja) 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP2002148820A (ja) * 2000-11-15 2002-05-22 Clariant (Japan) Kk パターン形成方法及びこの方法に使用される処理剤
KR100361481B1 (ko) * 2000-12-19 2002-11-23 주식회사 동진쎄미켐 케미칼 린스 조성물
JP2002323774A (ja) 2001-04-25 2002-11-08 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジストパターンディフェクト低減用処理剤及びそれを用いるレジストパターン形成方法
US6900003B2 (en) * 2002-04-12 2005-05-31 Shipley Company, L.L.C. Photoresist processing aid and method
WO2003094216A1 (fr) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Fluide de polissage et procede de polissage
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
WO2006025373A1 (ja) 2004-08-31 2006-03-09 Sanyo Chemical Industries, Ltd. 界面活性剤

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI448517B (zh) * 2007-04-09 2014-08-11 Az Electronic Mat Ip Japan Kk 含有內醯胺供塗覆光阻圖案之組合物
TWI502064B (zh) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution
CN111208716A (zh) * 2018-11-21 2020-05-29 台湾积体电路制造股份有限公司 微影方法
TWI725432B (zh) * 2018-11-21 2021-04-21 台灣積體電路製造股份有限公司 微影方法
US11079681B2 (en) 2018-11-21 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method for positive tone development
CN111208716B (zh) * 2018-11-21 2023-04-07 台湾积体电路制造股份有限公司 微影方法

Also Published As

Publication number Publication date
JP4585299B2 (ja) 2010-11-24
KR20060065509A (ko) 2006-06-14
TWI327683B (en) 2010-07-21
US20060128581A1 (en) 2006-06-15
US7897325B2 (en) 2011-03-01
KR100841194B1 (ko) 2008-06-24
JP2006163212A (ja) 2006-06-22

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