TW200630304A - Method for producing ceo2 fine particles and polishing slurry containing such fine particles - Google Patents

Method for producing ceo2 fine particles and polishing slurry containing such fine particles

Info

Publication number
TW200630304A
TW200630304A TW094139136A TW94139136A TW200630304A TW 200630304 A TW200630304 A TW 200630304A TW 094139136 A TW094139136 A TW 094139136A TW 94139136 A TW94139136 A TW 94139136A TW 200630304 A TW200630304 A TW 200630304A
Authority
TW
Taiwan
Prior art keywords
fine particles
ceo2
producing
polishing slurry
slurry containing
Prior art date
Application number
TW094139136A
Other languages
English (en)
Inventor
Yoshihisa Beppu
Tomohiro Sakai
Satoshi Kashiwabara
Kazuo Sunahara
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW200630304A publication Critical patent/TW200630304A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C09K3/1427—Abrasive particles per se obtained by division of a mass agglomerated by melting, at least partially, e.g. with a binder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094139136A 2004-11-08 2005-11-08 Method for producing ceo2 fine particles and polishing slurry containing such fine particles TW200630304A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004323854 2004-11-08

Publications (1)

Publication Number Publication Date
TW200630304A true TW200630304A (en) 2006-09-01

Family

ID=36319202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139136A TW200630304A (en) 2004-11-08 2005-11-08 Method for producing ceo2 fine particles and polishing slurry containing such fine particles

Country Status (5)

Country Link
US (1) US7381232B2 (zh)
EP (1) EP1818312A4 (zh)
JP (1) JP5012026B2 (zh)
TW (1) TW200630304A (zh)
WO (1) WO2006049197A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4945982B2 (ja) * 2005-06-01 2012-06-06 旭硝子株式会社 希土類元素ドープＣｅＯ２微粒子の製造方法
JPWO2007126030A1 (ja) * 2006-04-27 2009-09-10 旭硝子株式会社 酸化物結晶微粒子及び該微粒子を含む研磨用スラリー
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
JP4929855B2 (ja) * 2006-06-07 2012-05-09 旭硝子株式会社 セリア−ジルコニア固溶体微粒子の製造方法
JP4961985B2 (ja) * 2006-12-08 2012-06-27 旭硝子株式会社 ジルコニア微粒子の製造方法
CN101595060B (zh) * 2007-02-02 2011-12-21 旭硝子株式会社 固溶体微粒的制造方法
KR20100062998A (ko) * 2007-09-07 2010-06-10 아사히 가라스 가부시키가이샤 산화물 결정 미립자의 제조 방법
EP2221276A4 (en) * 2007-12-10 2011-03-09 Asahi Glass Co Ltd FINE CRYSTALLINE GRAINS SOLID SOLUTION OF CERI-ZIRCONE OXIDE AND METHOD FOR THE PRODUCTION THEREOF
WO2011024913A1 (ja) * 2009-08-28 2011-03-03 旭硝子株式会社 造粒体の製造方法およびガラス製品の製造方法
JP5858050B2 (ja) * 2011-12-22 2016-02-10 コニカミノルタ株式会社 研磨材再生方法
US10017675B2 (en) * 2011-12-27 2018-07-10 Konica Minolta, Inc. Method for separating polishing material and regenerated polishing material
FR2999560B1 (fr) * 2012-12-18 2015-01-23 Saint Gobain Ct Recherches Poudre de cristallites
JP2016055352A (ja) * 2013-02-05 2016-04-21 コニカミノルタ株式会社 研磨材スラリー
US20150353795A1 (en) * 2013-02-05 2015-12-10 Konica Minolta, Inc. Core/Shell-Type Inorganic Particles
JP2016056215A (ja) * 2013-02-05 2016-04-21 コニカミノルタ株式会社 研磨材の製造方法
JP2016055351A (ja) * 2013-02-05 2016-04-21 コニカミノルタ株式会社 研磨材スラリー
WO2018100686A1 (ja) * 2016-11-30 2018-06-07 日立化成株式会社 スラリ、研磨液及びそれらの製造方法、並びに基板の研磨方法
CN115667149B (zh) * 2020-05-25 2024-03-08 东丽株式会社 氧化铈的纳米粒子、包含氧化铈的纳米粒子的分散液、氧化剂、抗病毒剂及抗菌剂

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Publication number Priority date Publication date Assignee Title
US3663193A (en) * 1969-06-30 1972-05-16 Corning Glass Works Strengthened photosensitive opal glass
US3646713A (en) * 1970-03-16 1972-03-07 Norton Co Method of making fragmented crystalline material
JPS6015577B2 (ja) * 1980-05-27 1985-04-20 株式会社東芝 磁気記録用磁性粉の製造方法
JP2864451B2 (ja) 1994-11-07 1999-03-03 三井金属鉱業株式会社 研磨材及び研磨方法
JP2746861B2 (ja) 1995-11-20 1998-05-06 三井金属鉱業株式会社 酸化セリウム超微粒子の製造方法
US5962343A (en) 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
JP3918241B2 (ja) * 1996-08-01 2007-05-23 日産化学工業株式会社 表面改質された酸化第二セリウム粒子からなる研磨剤及び研磨方法
JP3359535B2 (ja) * 1997-04-25 2002-12-24 三井金属鉱業株式会社 半導体装置の製造方法
JP4009823B2 (ja) * 2000-12-25 2007-11-21 日産化学工業株式会社 酸化セリウムゾル及び研磨剤
US7887714B2 (en) * 2000-12-25 2011-02-15 Nissan Chemical Industries, Ltd. Cerium oxide sol and abrasive
JP2003007421A (ja) * 2001-06-26 2003-01-10 Ngk Spark Plug Co Ltd スパークプラグ
JP4206233B2 (ja) 2002-07-22 2009-01-07 旭硝子株式会社 研磨剤および研磨方法
WO2004083122A1 (ja) * 2003-03-20 2004-09-30 Asahi Glass Company, Limited チタン酸ビスマス微粒子の製造方法

Also Published As

Publication number Publication date
US20070204519A1 (en) 2007-09-06
EP1818312A1 (en) 2007-08-15
JP5012026B2 (ja) 2012-08-29
US7381232B2 (en) 2008-06-03
EP1818312A4 (en) 2010-09-08
JPWO2006049197A1 (ja) 2008-05-29
WO2006049197A1 (ja) 2006-05-11

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