TW200614372A - Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material - Google Patents

Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material

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Publication number
TW200614372A
TW200614372A TW094109411A TW94109411A TW200614372A TW 200614372 A TW200614372 A TW 200614372A TW 094109411 A TW094109411 A TW 094109411A TW 94109411 A TW94109411 A TW 94109411A TW 200614372 A TW200614372 A TW 200614372A
Authority
TW
Taiwan
Prior art keywords
film
nitride film
oxynitride film
nitriding
oxynitride
Prior art date
Application number
TW094109411A
Other languages
English (en)
Other versions
TWI310966B (zh
Inventor
Norifumi Fujimura
Ryoma Hayakawa
Hiroya Kitahata
Tsuyoshi Uehara
Takuya Yara
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200614372A publication Critical patent/TW200614372A/zh
Application granted granted Critical
Publication of TWI310966B publication Critical patent/TWI310966B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/28—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094109411A 2004-03-26 2005-03-25 Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material TW200614372A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004093870 2004-03-26

Publications (2)

Publication Number Publication Date
TW200614372A true TW200614372A (en) 2006-05-01
TWI310966B TWI310966B (zh) 2009-06-11

Family

ID=35056470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094109411A TW200614372A (en) 2004-03-26 2005-03-25 Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material

Country Status (7)

Country Link
US (2) US7507678B2 (zh)
EP (1) EP1739732A1 (zh)
JP (1) JP4624991B2 (zh)
KR (1) KR20070004881A (zh)
CN (1) CN1938835B (zh)
TW (1) TW200614372A (zh)
WO (1) WO2005093810A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007018121A1 (ja) * 2005-08-05 2007-02-15 National Institute For Materials Science 窒化ガリウム等のiii族窒化物の成膜方法
JP4815990B2 (ja) * 2005-10-17 2011-11-16 コニカミノルタホールディングス株式会社 プラズマ放電処理装置およびプラズマ放電処理方法
DE102005051819B3 (de) * 2005-10-28 2007-06-14 Infineon Technologies Ag Herstellungsverfahren für Halbleiterstrukturen
EP2200077B1 (en) * 2008-12-22 2012-12-05 Soitec Method for bonding two substrates
JP5457132B2 (ja) * 2009-10-19 2014-04-02 日本碍子株式会社 プラズマ処理装置
JP5781286B2 (ja) * 2010-09-30 2015-09-16 芝浦メカトロニクス株式会社 プラズマ処理方法及びプラズマ処理装置
JP2012089651A (ja) * 2010-10-19 2012-05-10 Showa Denko Kk Ｉｉｉ族窒化物半導体素子、多波長発光ｉｉｉ族窒化物半導体層及び多波長発光ｉｉｉ族窒化物半導体層の形成方法
TWI549163B (zh) * 2011-09-20 2016-09-11 應用材料股份有限公司 減少摻質擴散之表面穩定化製程
JP5848982B2 (ja) * 2012-02-17 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマのモニタリング方法
FR2993659B1 (fr) * 2012-07-23 2014-08-08 Adixen Vacuum Products Procede et installation de detection pour le controle d'etancheite d'emballages de produits scelles
JP6248574B2 (ja) * 2013-11-22 2017-12-20 富士通株式会社 半導体装置及びその製造方法
RU2596554C1 (ru) * 2015-07-22 2016-09-10 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) Способ вакуумно-плазменного азотирования изделий из нержавеющей стали в дуговом несамостоятельном разряде низкого давления
EP3372705A4 (en) * 2015-11-04 2019-07-17 National Institute Of Advanced Industrial Science PROCESS AND PRODUCTION DEVICE FOR NITROGEN COMPOUND
EP3377668A4 (en) * 2015-11-22 2019-07-17 Atmospheric Plasma Solutions, Inc. METHOD AND DEVICE FOR ENHANCING THE ADHESION OF METALLIC SURFACES
EP4137604A1 (en) * 2021-08-20 2023-02-22 Vito NV Method for applying a protective layer to a metal or metal alloy surface, and article comprising such protective layer

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* Cited by examiner, † Cited by third party
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WO1985004466A1 (en) * 1984-03-29 1985-10-10 Daidousanso Co., Ltd. Apparatus for producing high-purity nitrogen gas
JPH0610356B2 (ja) * 1988-02-18 1994-02-09 松下電器産業株式会社 プラズマ処理装置およびプラズマ温度測定方法
JP3899597B2 (ja) * 1997-01-30 2007-03-28 セイコーエプソン株式会社 大気圧プラズマ生成方法および装置並びに表面処理方法
JP3799819B2 (ja) * 1998-05-20 2006-07-19 セイコーエプソン株式会社 表面処理方法及び装置
US6245616B1 (en) * 1999-01-06 2001-06-12 International Business Machines Corporation Method of forming oxynitride gate dielectric
EP1912253A3 (en) 2000-03-13 2009-12-30 OHMI, Tadahiro Method of forming a dielectric film
JP2002100578A (ja) 2000-09-25 2002-04-05 Crystage Co Ltd 薄膜形成装置
JP2002155370A (ja) * 2000-11-14 2002-05-31 Sekisui Chem Co Ltd 常圧プラズマ処理方法及びその装置
JP4420577B2 (ja) * 2001-04-24 2010-02-24 積水化学工業株式会社 シリコンウェハの窒化処理方法及び窒化処理装置
JP2003203800A (ja) 2001-09-14 2003-07-18 Sekisui Chem Co Ltd 常圧プラズマ処理方法および装置
JP2003309117A (ja) * 2002-04-12 2003-10-31 Tadahiro Omi 半導体装置及びその製造方法並びに薄膜トランジスタ
JP2003306774A (ja) * 2002-04-18 2003-10-31 Konica Minolta Holdings Inc プラズマ放電処理装置
JP4204912B2 (ja) 2003-06-30 2009-01-07 株式会社半導体エネルギー研究所 窒化装置および半導体装置の作製方法

Also Published As

Publication number Publication date
WO2005093810A1 (ja) 2005-10-06
KR20070004881A (ko) 2007-01-09
CN1938835A (zh) 2007-03-28
CN1938835B (zh) 2011-01-26
US20080113519A1 (en) 2008-05-15
EP1739732A1 (en) 2007-01-03
JPWO2005093810A1 (ja) 2008-02-14
JP4624991B2 (ja) 2011-02-02
TWI310966B (zh) 2009-06-11
US20070190801A1 (en) 2007-08-16
US7507678B2 (en) 2009-03-24

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