TW200612432A - Internal voltage supply circuit - Google Patents

Internal voltage supply circuit

Info

Publication number
TW200612432A
TW200612432A TW094111953A TW94111953A TW200612432A TW 200612432 A TW200612432 A TW 200612432A TW 094111953 A TW094111953 A TW 094111953A TW 94111953 A TW94111953 A TW 94111953A TW 200612432 A TW200612432 A TW 200612432A
Authority
TW
Taiwan
Prior art keywords
supply circuit
current drive
drive capability
voltage supply
semiconductor device
Prior art date
Application number
TW094111953A
Other languages
English (en)
Other versions
TWI269300B (en
Inventor
Ho-Uk Song
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200612432A publication Critical patent/TW200612432A/zh
Application granted granted Critical
Publication of TWI269300B publication Critical patent/TWI269300B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
TW094111953A 2004-10-07 2005-04-15 Internal voltage supply circuit TWI269300B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040080125A KR100613449B1 (ko) 2004-10-07 2004-10-07 내부전압 공급회로

Publications (2)

Publication Number Publication Date
TW200612432A true TW200612432A (en) 2006-04-16
TWI269300B TWI269300B (en) 2006-12-21

Family

ID=36145084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111953A TWI269300B (en) 2004-10-07 2005-04-15 Internal voltage supply circuit

Country Status (5)

Country Link
US (2) US7106647B2 (zh)
JP (1) JP4280724B2 (zh)
KR (1) KR100613449B1 (zh)
CN (1) CN100461299C (zh)
TW (1) TWI269300B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613449B1 (ko) 2004-10-07 2006-08-21 주식회사 하이닉스반도체 내부전압 공급회로
KR100567077B1 (ko) * 2005-01-31 2006-04-04 주식회사 하이닉스반도체 내부 회로의 출력신호를 재조절하는 장치를 갖는 메모리장치와 그 출력신호를 재조절하는 방법
US7401315B2 (en) * 2005-11-14 2008-07-15 Avago Technologies General Ip Pte Ltd System and method for implementing package level IP preverification for system on chip devices
US7957213B2 (en) * 2006-02-09 2011-06-07 Hynix Semiconductor, Inc. Semiconductor memory apparatus
US7603605B2 (en) * 2007-01-08 2009-10-13 Arm Limited Performance control of an integrated circuit
US7596039B2 (en) * 2007-02-14 2009-09-29 Micron Technology, Inc. Input-output line sense amplifier having adjustable output drive capability
KR100955682B1 (ko) * 2008-04-28 2010-05-03 주식회사 하이닉스반도체 센싱 지연회로 및 이를 이용한 반도체 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11328973A (ja) * 1998-05-20 1999-11-30 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR100272511B1 (ko) * 1998-08-10 2000-11-15 김영환 반도체 메모리소자의 고전압 발생회로
KR100300079B1 (ko) 1999-07-28 2001-11-01 김영환 센스앰프 구동회로
JP2002025264A (ja) 2000-07-05 2002-01-25 Toshiba Corp 半導体装置
JP2002074960A (ja) 2000-08-24 2002-03-15 Toshiba Microelectronics Corp 半導体記憶装置
WO2003034386A2 (en) * 2001-10-19 2003-04-24 Clare Micronix Integrated Systems, Inc. Method and system for ramp control of precharge voltage
KR100535652B1 (ko) * 2001-12-21 2005-12-08 주식회사 하이닉스반도체 플래쉬 메모리 장치
JP4289825B2 (ja) * 2002-03-29 2009-07-01 株式会社ルネサステクノロジ 半導体記憶装置
KR100452319B1 (ko) * 2002-05-10 2004-10-12 삼성전자주식회사 반도체 메모리 장치의 내부전원전압 발생회로 및내부전원전압 제어방법
JP2004079033A (ja) * 2002-08-12 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
US7034781B2 (en) * 2003-02-14 2006-04-25 Elantec Semiconductor Inc. Methods and systems for driving displays including capacitive display elements
KR100543659B1 (ko) * 2003-06-20 2006-01-20 주식회사 하이닉스반도체 내부전압 생성용 액티브 드라이버
KR100613449B1 (ko) 2004-10-07 2006-08-21 주식회사 하이닉스반도체 내부전압 공급회로
KR100645049B1 (ko) * 2004-10-21 2006-11-10 삼성전자주식회사 프로그램 특성을 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법

Also Published As

Publication number Publication date
JP4280724B2 (ja) 2009-06-17
KR20060031205A (ko) 2006-04-12
JP2006107694A (ja) 2006-04-20
CN100461299C (zh) 2009-02-11
US7286418B2 (en) 2007-10-23
US7106647B2 (en) 2006-09-12
TWI269300B (en) 2006-12-21
US20060291318A1 (en) 2006-12-28
KR100613449B1 (ko) 2006-08-21
CN1758375A (zh) 2006-04-12
US20060077744A1 (en) 2006-04-13

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