TW200609682A - Material for formation of resist protection film and method of forming resist pattern therewith - Google Patents

Material for formation of resist protection film and method of forming resist pattern therewith

Info

Publication number
TW200609682A
TW200609682A TW094126058A TW94126058A TW200609682A TW 200609682 A TW200609682 A TW 200609682A TW 094126058 A TW094126058 A TW 094126058A TW 94126058 A TW94126058 A TW 94126058A TW 200609682 A TW200609682 A TW 200609682A
Authority
TW
Taiwan
Prior art keywords
liquid
immersion
liquid immersion
resist
formation
Prior art date
Application number
TW094126058A
Other languages
English (en)
Chinese (zh)
Other versions
TWI332123B (enExample
Inventor
Kotaro Endo
Masaaki Yoshida
Keita Ishizuka
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200609682A publication Critical patent/TW200609682A/zh
Application granted granted Critical
Publication of TWI332123B publication Critical patent/TWI332123B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW094126058A 2004-07-30 2005-07-29 Material for formation of resist protection film and method of forming resist pattern therewith TW200609682A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004224810 2004-07-30
JP2004228695A JP4368266B2 (ja) 2004-07-30 2004-08-04 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200609682A true TW200609682A (en) 2006-03-16
TWI332123B TWI332123B (enExample) 2010-10-21

Family

ID=35786350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126058A TW200609682A (en) 2004-07-30 2005-07-29 Material for formation of resist protection film and method of forming resist pattern therewith

Country Status (7)

Country Link
US (1) US7879529B2 (enExample)
EP (1) EP1788438A4 (enExample)
JP (1) JP4368266B2 (enExample)
KR (3) KR100952174B1 (enExample)
CN (1) CN101019076B (enExample)
TW (1) TW200609682A (enExample)
WO (1) WO2006011606A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879529B2 (en) 2004-07-30 2011-02-01 Tokyo Ohka Kogyo Co., Ltd. Material for formation of resist protection film and method of forming resist pattern therewith
US7951523B2 (en) 2004-07-30 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protective film and method for forming resist pattern using same

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
JP5151038B2 (ja) * 2006-02-16 2013-02-27 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、半導体装置及びその製造方法
US20070196773A1 (en) * 2006-02-22 2007-08-23 Weigel Scott J Top coat for lithography processes
JP4832142B2 (ja) * 2006-03-31 2011-12-07 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP2007284368A (ja) * 2006-04-14 2007-11-01 Daicel Chem Ind Ltd （メタ）アクリル系単量体及びレジスト樹脂の保護膜用樹脂
WO2007131792A1 (en) * 2006-05-17 2007-11-22 Micronic Laser Systems Ab Process for immersion exposure of a substrate
JP5049513B2 (ja) * 2006-05-30 2012-10-17 Ｊｓｒ株式会社 保護膜形成用樹脂組成物
JP2008037973A (ja) * 2006-08-04 2008-02-21 Daicel Chem Ind Ltd 半導体レジスト保護膜用樹脂及び半導体の製造方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
US8507189B2 (en) 2006-09-27 2013-08-13 Jsr Corporation Upper layer film forming composition and method of forming photoresist pattern
WO2008047678A1 (fr) 2006-10-13 2008-04-24 Jsr Corporation Composition pour la formation d'un film de couche supérieure et procédé de formation d'un motif en photorésine
TW201202857A (en) 2010-05-18 2012-01-16 Jsr Corp Composition for formation of overlay film for immersion exposure and method for formation of photo-resist pattern
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
CN109369845B (zh) * 2018-09-07 2021-03-09 珠海雅天科技有限公司 一种焦深DOF大于或等于300nm的半导体ArF光刻胶树脂及其应用
JP2020067547A (ja) * 2018-10-24 2020-04-30 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物およびその使用
CN114063389A (zh) * 2020-07-31 2022-02-18 华为技术有限公司 图案化材料和图案化薄膜

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387222A (en) * 1981-01-30 1983-06-07 Minnesota Mining And Manufacturing Company Cyclic perfluoroaliphaticdisulfonimides
DE69126586T2 (de) * 1990-08-30 1997-11-27 At & T Corp Verfahren zur Herstellung einer Vorrichtung
JP2587158B2 (ja) * 1991-10-21 1997-03-05 工業技術院長 モノヒドリル化ペルフルオロ第３級アミンの製造方法
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
JPH08254834A (ja) * 1995-03-15 1996-10-01 Shin Etsu Chem Co Ltd フォトレジストオーバーコート材料及びレジストパターン形成方法
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JP3727044B2 (ja) * 1998-11-10 2005-12-14 東京応化工業株式会社 ネガ型レジスト組成物
CN1293116C (zh) * 2000-02-14 2007-01-03 太阳油墨制造株式会社 形成消光涂膜用的光固化性·热固化性组合物
CN100454142C (zh) * 2000-03-29 2009-01-21 学校法人神奈川大学 光固化性和热固化性树脂组合物、其感光性干薄膜及使用其的图案形成方法
JP3962893B2 (ja) * 2001-02-09 2007-08-22 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
JP3878451B2 (ja) * 2001-10-22 2007-02-07 富士フイルムホールディングス株式会社 感光性樹脂転写材料、画像形成方法、カラーフィルターとその製造方法、フォトマスクとその製造方法
JP4048791B2 (ja) * 2002-02-18 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2003345026A (ja) 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
US6639035B1 (en) * 2002-05-28 2003-10-28 Everlight Usa, Inc. Polymer for chemical amplified photoresist compositions
JP2004077653A (ja) * 2002-08-13 2004-03-11 Toagosei Co Ltd 架橋硬化型樹脂組成物
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
TW200424767A (en) 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
KR101041285B1 (ko) * 2004-01-15 2011-06-14 제이에스알 가부시끼가이샤 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성방법
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4368266B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879529B2 (en) 2004-07-30 2011-02-01 Tokyo Ohka Kogyo Co., Ltd. Material for formation of resist protection film and method of forming resist pattern therewith
US7951523B2 (en) 2004-07-30 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protective film and method for forming resist pattern using same

Also Published As

Publication number Publication date
EP1788438A4 (en) 2009-07-29
US7879529B2 (en) 2011-02-01
KR20070038568A (ko) 2007-04-10
KR100952174B1 (ko) 2010-04-09
CN101019076A (zh) 2007-08-15
KR20080075558A (ko) 2008-08-18
WO2006011606A1 (ja) 2006-02-02
EP1788438A1 (en) 2007-05-23
KR20080075557A (ko) 2008-08-18
CN101019076B (zh) 2011-03-02
KR100870940B1 (ko) 2008-12-01
TWI332123B (enExample) 2010-10-21
JP4368266B2 (ja) 2009-11-18
US20080311523A1 (en) 2008-12-18
JP2006064711A (ja) 2006-03-09

Similar Documents

Publication Publication Date Title
TW200609682A (en) Material for formation of resist protection film and method of forming resist pattern therewith
TW200606179A (en) Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film
Rabnawaz et al. Fluorine‐free anti‐smudge polyurethane coatings
ATE345396T1 (de) Verfahren zur herstellung von polymerschichten
TW200731016A (en) Composition for forming upper film and method for forming photoresist pattern
WO2008129964A1 (ja) パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
WO2005050324A3 (en) A method and apparatus for producing microchips
TW200510495A (en) Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material and method for forming resist pattern using such resist-protection film
WO2008005208A3 (en) Printing form precursor and process for preparing a stamp from the precursor
DE50103534D1 (de) Verfahren zur herstellung eines mikrostrukturierten oberflächenreliefs durch prägen thixotroper schichten und mikrostrukturiertes oberflächenrelief
TW200739137A (en) Method for forming surface unevenness
TW200609683A (en) Material for forming resist protective film and method for forming resist pattern using the same
WO2008090768A1 (ja) 感光性樹脂組成物、及びこれを用いたパターン形成方法
TW200641542A (en) Material for forming resist protective film and resist pattern forming method using the same
ATE455594T1 (de) Verfahren zur herstellung von polymeren durch sprühpolymerisation
EP2610673A3 (en) Method for manufacturing lithographic printing plates
TW200743909A (en) Composition for forming pattern and in-plane printing method using the same
ATE332948T1 (de) Klebegegenstand und verfahren zur herstellung eines solchen gegenstandes
JP2016029478A (ja) 凹凸構造形成用組成物
TW200621880A (en) Curable composition, cured product, and laminate
TW200606464A (en) Pattern-forming method, process for producing color filter, color filter and liquid crystal display device
CN105038392A (zh) 一种uv翻印涂料组合物及其应用
WO2008087840A1 (ja) 液浸露光用感放射線性樹脂組成物及びフォトレジストパターン形成方法
TW200613909A (en) Colored photosensitive resin composition, coating film of colored photosensitive resin composition, photosensitive resin transfer material, method of foaming photosensitive resin layer, color filter, method for producing color filter, and liquid crystal
ATE487166T1 (de) Prozess zur herstellung einer polymerischen relief struktur

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees