TW200604390A - Film formation apparatus and method of cleaning such a film formation apparatus - Google Patents

Film formation apparatus and method of cleaning such a film formation apparatus

Info

Publication number
TW200604390A
TW200604390A TW094112590A TW94112590A TW200604390A TW 200604390 A TW200604390 A TW 200604390A TW 094112590 A TW094112590 A TW 094112590A TW 94112590 A TW94112590 A TW 94112590A TW 200604390 A TW200604390 A TW 200604390A
Authority
TW
Taiwan
Prior art keywords
film formation
formation apparatus
cleaning
reaction chamber
film
Prior art date
Application number
TW094112590A
Other languages
English (en)
Other versions
TWI383074B (zh
Inventor
Atsushi Endo
Tomonori Fujiwara
Yuichiro Morozumi
Katsushige Harada
Shigeru Nakajima
Dong-Kyun Choi
Haruhiko Furuya
Kazuo Yabe
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200604390A publication Critical patent/TW200604390A/zh
Application granted granted Critical
Publication of TWI383074B publication Critical patent/TWI383074B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094112590A 2004-04-23 2005-04-20 A film forming apparatus, and a film forming apparatus TWI383074B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004127570 2004-04-23
JP2005075048A JP4675127B2 (ja) 2004-04-23 2005-03-16 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム

Publications (2)

Publication Number Publication Date
TW200604390A true TW200604390A (en) 2006-02-01
TWI383074B TWI383074B (zh) 2013-01-21

Family

ID=35187684

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112590A TWI383074B (zh) 2004-04-23 2005-04-20 A film forming apparatus, and a film forming apparatus

Country Status (4)

Country Link
US (1) US7368384B2 (zh)
JP (1) JP4675127B2 (zh)
KR (1) KR20060047371A (zh)
TW (1) TWI383074B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI768619B (zh) * 2020-01-23 2022-06-21 日商信越石英股份有限公司 反應管的洗淨方法，半導體裝置的製造方法及基板處理裝置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4272486B2 (ja) * 2003-08-29 2009-06-03 東京エレクトロン株式会社 薄膜形成装置及び薄膜形成装置の洗浄方法
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
JP4258518B2 (ja) * 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4661753B2 (ja) * 2006-09-29 2011-03-30 東京エレクトロン株式会社 基板処理方法、洗浄方法及び記憶媒体
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
JP5250141B2 (ja) * 2012-07-13 2013-07-31 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP5465802B2 (ja) * 2013-04-12 2014-04-09 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP5710033B2 (ja) * 2014-01-22 2015-04-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
KR102414617B1 (ko) * 2017-08-17 2022-07-01 삼성전자주식회사 기판 처리 장치 및 이의 세정 방법
CN109585267B (zh) * 2017-09-29 2023-12-01 住友电气工业株式会社 氮化硅膜的形成方法
JP6946989B2 (ja) 2017-12-06 2021-10-13 住友電気工業株式会社 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法
WO2019120358A1 (de) * 2017-12-21 2019-06-27 centrotherm international AG Verfahren zum betrieb einer abscheideanlage
JP6956660B2 (ja) 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
CN116770264B (zh) * 2023-08-21 2023-11-14 合肥晶合集成电路股份有限公司 半导体器件的加工方法、装置、处理器和半导体加工设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746448B2 (ja) 1990-02-07 1998-05-06 セントラル硝子株式会社 混合ガス組成物
JP2901778B2 (ja) * 1991-05-08 1999-06-07 セントラル硝子株式会社 Ｈｆガスによる窒化珪素のクリーニング方法
JP2856613B2 (ja) * 1991-12-03 1999-02-10 セントラル硝子株式会社 アルコキシシラン非完全分解物のクリーニング方法
JP3204866B2 (ja) * 1994-08-31 2001-09-04 東京エレクトロン株式会社 真空処理装置及び真空処理方法
JP3400293B2 (ja) * 1996-05-01 2003-04-28 株式会社東芝 Ｃｖｄ装置及びそのクリーニング方法
US6095158A (en) * 1997-02-06 2000-08-01 Lam Research Corporation Anhydrous HF in-situ cleaning process of semiconductor processing chambers
JP4426671B2 (ja) * 1998-11-27 2010-03-03 東京エレクトロン株式会社 熱処理装置及びその洗浄方法
JP2001127056A (ja) * 1999-10-29 2001-05-11 Applied Materials Inc プロセスチャンバー内のクリーニング方法及び基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI768619B (zh) * 2020-01-23 2022-06-21 日商信越石英股份有限公司 反應管的洗淨方法，半導體裝置的製造方法及基板處理裝置
US11685993B2 (en) 2020-01-23 2023-06-27 Kokusai Electric Corporation Method of cleaning reaction tube, method of manufacturing semiconductor device, and substrate processing apparatus

Also Published As

Publication number Publication date
KR20060047371A (ko) 2006-05-18
US7368384B2 (en) 2008-05-06
TWI383074B (zh) 2013-01-21
JP2005333110A (ja) 2005-12-02
US20050245099A1 (en) 2005-11-03
JP4675127B2 (ja) 2011-04-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees