TW200744130A - Cleaning method of apparatus for depositing metal containing film - Google Patents

Cleaning method of apparatus for depositing metal containing film

Info

Publication number
TW200744130A
TW200744130A TW096102280A TW96102280A TW200744130A TW 200744130 A TW200744130 A TW 200744130A TW 096102280 A TW096102280 A TW 096102280A TW 96102280 A TW96102280 A TW 96102280A TW 200744130 A TW200744130 A TW 200744130A
Authority
TW
Taiwan
Prior art keywords
containing film
metal containing
cleaning method
depositing metal
reactor
Prior art date
Application number
TW096102280A
Other languages
Chinese (zh)
Inventor
Dong-Ho You
Ki-Hoon Lee
Yu-Min Jung
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd filed Critical Ips Ltd
Publication of TW200744130A publication Critical patent/TW200744130A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C) -eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.
TW096102280A 2006-05-29 2007-01-22 Cleaning method of apparatus for depositing metal containing film TW200744130A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060047915A KR100653217B1 (en) 2006-05-29 2006-05-29 Cleaning method of apparatus for depositing metal containing film

Publications (1)

Publication Number Publication Date
TW200744130A true TW200744130A (en) 2007-12-01

Family

ID=37731882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102280A TW200744130A (en) 2006-05-29 2007-01-22 Cleaning method of apparatus for depositing metal containing film

Country Status (4)

Country Link
US (1) US20090090384A1 (en)
KR (1) KR100653217B1 (en)
TW (1) TW200744130A (en)
WO (1) WO2007139270A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105143504A (en) * 2013-04-23 2015-12-09 艾克斯特朗欧洲公司 Mocvd layer growth method with subsequent multi-stage cleaning step

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110114114A1 (en) * 2008-07-14 2011-05-19 Ips Ltd. Cleaning method of apparatus for depositing carbon containing film
TWI462162B (en) * 2008-07-17 2014-11-21 Wonik Ips Co Ltd Cleaning method of apparatus for depositing carbon containing film
JP5751895B2 (en) * 2010-06-08 2015-07-22 株式会社日立国際電気 Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus
US20120237693A1 (en) * 2011-03-17 2012-09-20 Applied Materials, Inc. In-situ clean process for metal deposition chambers
CN103219227A (en) * 2013-04-09 2013-07-24 上海华力微电子有限公司 Plasma cleaning method
WO2021108297A1 (en) * 2019-11-27 2021-06-03 Applied Materials, Inc. Dual plasma pre-clean for selective gap fill
WO2021108294A2 (en) 2019-11-27 2021-06-03 Applied Materials, Inc. Processing chamber with multiple plasma units

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US6872322B1 (en) * 1997-11-12 2005-03-29 Applied Materials, Inc. Multiple stage process for cleaning process chambers
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
KR20010096229A (en) * 2000-04-18 2001-11-07 황 철 주 Apparatus and method for forming ultra-thin film of semiconductor device
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
JP2004179426A (en) * 2002-11-27 2004-06-24 Tokyo Electron Ltd Cleaning method of substrate processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105143504A (en) * 2013-04-23 2015-12-09 艾克斯特朗欧洲公司 Mocvd layer growth method with subsequent multi-stage cleaning step

Also Published As

Publication number Publication date
WO2007139270A1 (en) 2007-12-06
KR100653217B1 (en) 2006-12-04
US20090090384A1 (en) 2009-04-09

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