TW200538568A - Sputtering apparatus - Google Patents

Abstract

The present invention provides a film-forming apparatus for forming a film with uniform thickness distribution, by reducing overdischarge and a non-eroded portion. The film-forming apparatus 1 has a plurality of targets 31a to 31f, and alternating voltages with different polarities are applied to the different targets 31a to 31f from the same alternating power source. When one set of targets 31a, 31c and 31e are set to a negative potential, the other set of targets 31b, 31d and 31f are set to a positive potential and work as the anodes, so that there is no need to arrange the anode between the adjacent targets out of the targets 31a to 31f. Because of arranging nothing between the adjacent targets out of the targets 31a to 31f, the film-forming apparatus can shorten the distance (s) among the targets 31a to 31f, and because of reducing a ratio of the area which does not emit sputtered particles, with respect to areas in which the targets 31a to 31f are arranged, the film-forming apparatus makes the sputtered particles uniformly arrive at the substrate 5 and the film thickness distribution uniform.

Description

200538568 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a sputtering device. [Prior Art] The reference numeral 1 01 in FIG. 8 indicates a film forming apparatus of a conventional technique.

The film forming apparatus 101 includes a vacuum tank 102 and a plurality of targets 131a to 13e arranged inside the vacuum tank 102. Each of the targets 1 3 1 a to 1 3 1 e has an elongated plate shape, and is arranged in parallel with each other at a certain interval or more with the sputtering surface facing the substrate 1 05 arranged inside the vacuum chamber 102. The inside of the vacuum tank 102 is evacuated by the vacuum exhaust system 1 12 on the one side, and the sputtering gas is introduced into the vacuum tank 10 02 by the gas supply system 1 1 3 while being formed inside the vacuum tank 102 In the state of the membrane ambient gas, start the power supply 1 1 7 a to 1 3 5 e connected to the electrodes 1 3 5 a to 1 3 5 e, and when the vacuum tank 1 2 and the substrate 1 0 5 are placed at the ground potential When an AC voltage is applied to each of the targets 1 3 1 a to 1 3 1 e in a state of being exposed, the surfaces of the targets 1 3 1 a to 1 3 1 e are sputtered. When a plurality of targets 1 3 1 a to 1 3 1 e are sputtered at the same time, a shield 1 1 1 placed at the ground potential is disposed only at the periphery of the targets 1 3 la to 1 3 1 e. Although the plasma will be biased to the direction where the shield 1 1 1 is arranged, the shield 1 placed at the ground potential is also arranged between the targets 1 3 1 a to 1 3 1 e in the film forming apparatus 1 0 1. Since the plasma is not biased, each target 1 3 1 a to: me is uniformly sputtered. -5- 200538568 (2) On the opposite side of the sputtering surface of the target material 3 I a to 1 3 1 e, elongated magnetic field forming means 140a to 140e are arranged along the long side direction of the target material 13 1a to 131e. The widths of the magnetic field forming means 140a to 140e are shorter than the widths of the targets 131a to 1 3 1e. The moving means (not shown) can be used to move the ends of the targets 1 3 1 a to 1 3 1 e in the width direction to the other end. Move back and forth. Therefore, the magnetic field formed by the magnetic field forming means 1 4 0 a to 1 4 0 e also moves on the surface of the target 1 3 1 a to 1 3 1 e. Therefore, the higher plasma density is in the target 1 3 1 The surface of a to 1 3 1 e moves, and a wide area of the targets 1 3 1 a to 1 3 1 e is sputtered. In a film forming apparatus using a plurality of targets, since the number of targets is large, the sputtered particles are released in a wide area. Therefore, a film formation process can be performed on a large-area substrate 105. However, the conventional film forming apparatus has the problems described below. First, first, since sputter particles are not released from the position where the shield 11 1 is located, a portion of the surface of the substrate 105 located on the shield 1 1 1 and a portion located on the targets 131 a to 131 e occur. Film thickness distribution and uneven film quality distribution. In addition, as described above, when the magnetic field forming means 1 40 a to 1 4 0 e is moved, and when an AC voltage is applied to the target 1 3 1 a to 1 3 1 e, the magnetic field forming means 14 0a to With the movement of 140e, the higher density part of the plasma moves with it. Therefore, when a reactive gas such as oxygen is introduced together with the sputtering gas to perform sputtering, when the plasma density portion moves, the plasma density on the sputtering surface becomes smaller, and the target material and the Reactive gas is anti-6-200538568 (3) The cause of abnormal discharge and the formation of a film (such as an oxide film) of reactants. If the magnetic field forming means 1 40 a to 1 40 e is fixed and sputtered without moving, the high plasma density part does not move, but what happens? There is a non-eroded part in the base material 1 3 1 a to 1 3 1 e (especially in the central part in the width direction of the target 1 3] a to 1 3 1 e). This non-eroded part becomes the cause of abnormal discharge. In addition, It also causes the non-eroded part to peel off and cause particles. [Patent Document 1] Japanese Patent Publication No. 2002-508447 [Patent Literature 2] Japanese Patent Publication No. 1 1-2 4 1 1 5 9 [Patent Literature 3] Japanese Patent Publication No. 9-13160 [Invention Contents] (Problems to be Solved by the Invention) The present invention was created in order to solve the problems of the above-mentioned conventional technologies, and aims to provide a thin film that can form a wide erosion area without abnormal discharge and uniform film thickness distribution. Film forming device. (Means for solving problems) In order to solve the above-mentioned problems, the first invention of the patent application scope is a film-forming device having: a vacuum tank; a plurality of plate-shaped targets having a long-side direction; and applying AC to the aforementioned targets The AC power source of voltage is applied to the different target materials by the same AC power source among the plurality of target materials. The target materials are on the sputtering surface facing the same direction. 200538568 (4) In the state, the side surfaces in the longitudinal direction of the adjacent targets are arranged so as to directly face each other only through the ambient gas in the vacuum tank. The invention according to the second patent application scope is the film-forming device according to the first patent application scope, wherein the distance between the side surfaces facing each other is set to be 1 m m or more and 10 m m or less. The invention with the scope of patent application No. 3 is the film-forming device of the scope of patent application No. 1 or 2, wherein the frequency of the aforementioned AC power supply unit is 1 kHz or more and 100 kHz or less. The invention of claim 4 is a film-forming device, comprising: a vacuum tank; and a plurality of elongated plate-shaped targets arranged inside the vacuum tank, and the targets are arranged parallel to each other in the direction of the growth direction. In a facing state, elongated magnetic field forming means are arranged along the longitudinal direction of the target at the front and back positions of the targets, and the magnetic field is arranged outside the front and back positions of the targets. Outside the area of the forming means I, an elongated auxiliary magnetic field forming means is arranged along the longitudinal direction of the target. The invention of claim 5 is the film-forming device of claim 4, wherein each of the magnetic field forming means has a plurality of magnets, and among the plurality of magnets, it is disposed adjacent to the auxiliary magnetic field forming means. The magnetic pole of the surface of the magnet facing the target side is set to have the same polarity as the magnetic pole of the surface facing the target side of the auxiliary magnetic field forming means. The invention claimed in item 6 of the patent application is a film-forming device such as the item 4 or 5 in the patent application, which has a moving means for making the aforementioned 200538568 (5) magnetic field forming means and the auxiliary magnetic field forming means opposite to The target is moved relatively. The present invention is constituted as described above, and no ground electrode or insulator is arranged between adjacent targets. Therefore, when the inside of the vacuum chamber is evacuated, the sides of the adjacent targets in the long side direction face each other. A vacuum ambient gas is also formed in the region of the vacuum atmosphere, and the width of the vacuum ambient gas is equal to the distance > distance between the sides. φ Because no member is arranged, the distance between the sides can be reduced to 1 mm or more and 10 mm or less, so the area where the sputter particles are not released will be narrowed, so that the distribution of the amount of sputter particles reaching the substrate is uniform. status. If the width of the magnetic field forming means is approximately equal to the width of the target, even if sputtering is performed without moving the magnetic field forming means, the plasma density of the entire surface area of the target can be increased. When the interval between intervals is shorter, the interval between the magnetic field forming means becomes shorter. • When multiple magnetic field forming means are arranged close to each other, the magnetic fields will be out of balance due to the magnetic field interference of adjacent magnetic field forming means. In particular, when an AC power source is used for sputtering, the formation of a pair of cathodes (target materials) will have different discharge impedances, which will result in deterioration of film thickness and film quality distribution, and furthermore, formation of There is a problem that the target use efficiency of a pair of cathodes deteriorates. In the film forming apparatus of the present invention, an auxiliary magnetic field forming means is provided near the outermost magnetic field forming means outside the region where the target is disposed, and the auxiliary magnetic field forming means can be used to form a hand near the magnetic field- The magnetic field interference at 9-200538568 (6) becomes more moderate, so the magnetic field intensity will not lose balance, and the magnetic flux density distribution will be uniform on the surface of each target. While the magnetic field forming means is relatively moved relative to the target, while sputtering is performed, because the magnetic lines of force are far away, the part with a reduced plasma density is not subject to sputtering, so that the formation of the target surface with the reactive gas occurs. The reactants (such as oxides) of the reaction may cause abnormal discharges or particles, but as described above, in the present invention, it is not necessary to move the magnetic field forming means, and the relative Since sputtering is performed with the target in a fixed state, abnormal discharge does not occur. (Effects of the Invention) With the film forming apparatus of the present invention, a film having a good film thickness distribution and film quality distribution can be obtained even when a film is formed on a large substrate. In addition, since there is no need to provide a ground shield part, particles from the part of the ground shield 1 are reduced. In addition, compared with the conventional device, # does not need to be provided with a ground shielding component, a magnetic circuit shaking mechanism, and an abnormal discharge prevention mechanism for the power supply, so the number of parts can be reduced, costs can be reduced, and improvements can be made. Device maintainability. [Embodiment] The reference numeral 1 in FIG. 1 shows an example of a film forming apparatus according to the present invention. The film forming apparatus 1 includes: a vacuum tank 2; and a substrate holder (subs tr a te h) disposed inside the vacuum tank 2. 0 1 der) 4; and a sputtering source 3 disposed at a position facing the substrate holder 4 inside the vacuum chamber 2. Sputtering -10-

200538568 (7) The source 3 series has a plurality of sputtering portions 3 0 a to 30 f. Each sputtering portion 3 0f has a plate-shaped target 3 1 a to 3 1 f. When each target 3 1 When the surface subjected to sputtering is used as the sputtering surface, the targets 3 1 a to 3 are placed so that the sputtering surfaces are positioned on the same plane. Each of the targets 3 1 a to 3 1 f is formed into a thin shape having a long side direction, and each projecting surface is also formed into an elongated shape having a long side direction. Each of the targets 3 1 f has the same shape, and the sides (side surfaces) in the longitudinal direction of the sputtering surface are arranged in parallel with a predetermined interval therebetween. The sides of the adjacent targets 3 1 a to 3 1 f are formed at a certain distance from each other, and therefore, the sides of the adjacent targets 3 1 a to 3 1 f are aligned. In the present invention, no shielding is provided between the targets 3 1 a to 3 1 f, and the sides of the targets 3 1 a to 3 1 f face each other directly. On the back of each target 3 1 a to 3 1 f, electrodes 3 5 a to 3 5 f with the same width and the same length as each target 3 1 f are tightly connected from the target 3 1 a to 3 1 f. The periphery is prominent. Among the two terminals of the AC power supply 17a to 17c and the power supply 17a to 17c, one of the terminals is connected to one of the electrodes 35a, 35c, and 3f of the two electrodes 35a to 35f. The terminals are connected to the other electrode 3 5 b, 35f 〇 2 terminals of each AC power supply 17 a to 17 c form the output voltage of the same polarity, and the target materials 3 1 a to 3 1 f are closely mounted on Since the electrode 3 5 f is applied to two adjacent targets 3 1 a to 3 1 f, AC voltages of mutually different polarities are applied from AC to 17 c. Therefore, 30a to 31a to 1f are formed in a long shape, and 31a to the edge portion is formed as a flat pole or a screen 31a to be connected to each other adjacently for 35d, plus or minus 3 5a to, source 1 7a in Each other-11-

200538568 (δ) Among the adjacent materials J 1 a to 3 1 f, one is placed at a positive potential and the other is placed at a negative potential. An insulating plate 3 3 a to 3 3 f is mounted on the opposite side of the electrodes 3 5 a to 3 5 f from the target 3 1 a to 3 1 f. The target 3 1 a to 3 1 f and the electrode 35f are formed and described later. The magnetic field forming means 40a to 40f or their insulation. Magnetic fields forming means 4 0 a to 4 0 f are arranged on the electrodes 3 5 a to 3 5 f on the opposite sides of the targets 3 1 a to 3 1 f. Referring to FIG. 2, each of the forming means 40 a to 40 f has an elongated ring magnet 42 a having a size substantially equal to the outer periphery of the target 3 1 f and a length longer than the ring magnets 42 a to 42 f. The short rod-shaped magnet 43f. Each ring magnet 42a to 42f is located at the front and back positions of the corresponding target 3 1 f, and is arranged to be as long as the target 3 1 a to 3 1 f.

I parallel. As described above, the targets 3 1 a to 3 1 f are arranged at a predetermined interval Φ. Therefore, the ring magnets 42 a to 42 f are in a state of being arranged at the same interval as the target 3 1 f. The rod-shaped magnets 43a to 43f are arranged inside the ring-shaped magnets 42a to 42f, and are arranged along the longitudinal direction of the targets 3 1 a to 3 1 f. The rod-shaped magnets 43a to 43f are in a state where ring-shaped magnets 42a to 42f are formed on both sides in the longitudinal direction. Among the magnets of the magnetic field forming means 40a to 40f, the magnets (ring magnets) arranged as the first magnets 42a to 42f, and the magnets (rod magnets) arranged between the magnets 42a to 4 2f are set to the first, and the other The surface area 3 5 a to other components of the magnetic field shape 31a to 42f; 43a to 31a to the side parallel to the ring with 31a to the side. Therefore, the first two magnets on both sides-12- 200538568 〇) 43a to At 43f, the first magnetic poles 42a to 42f and the younger magnets 43a to 43f are located at both ends in the thickness direction, that is, at the front side and the back side. When facing the target 3 1 a to 3 1 f When the side surface is a surface, plate-shaped yokes 4 1 a to 4 1 f are closely adhered to the back sides of the first magnets 4 2 a to 4 2 f and the second magnets 4 3 a to 4 3 f. Therefore, the magnetic force lines generated between the magnetic poles on the back side of the first magnets 42 & to 42f and the second magnets 43a to 43f > pass through the inside of the yokes 4 1 a to # 4 1 f. The planar shapes of the yokes 4 1 a to 4 1 f are equal to the outer periphery of the ring shape of the first magnets 42 a to 42 f. The first magnets 42 a to 42 f are arranged so as not to protrude from the edges of the yokes 4 1 a to 4 1 f. . As described above, the shapes of the first magnets 42a to 42f are substantially equal to those of the targets 31a to 3If, and therefore, the planar shapes of the magnetic field forming means 40a to 40f are also substantially equal to those of the targets 31a to 3f. Here, the respective magnetic field forming means 40a to 40f are arranged at the front and back positions of the corresponding k 1 targets 3 1 a to 3 1 f, so the respective magnetic field forming means Φ 403 to 40f will not pass from the target 31a. The outer perimeters of 31 to 31f protrude, and the respective magnetic field forming means 40a to 40f are not arranged to straddle the two targets 31a to 31. When the magnetism on the surface side of the first magnet 42a to 42f is N-pole, the second magnet 43a The magnetic properties of the magnetic poles on the surface side to 43f are s poles. When the magnetic properties of the magnetic poles on the surface side of the first magnets 42a to 42f are S poles, the magnetic properties of the magnetic poles on the surface side of the second magnets 43a to 43f are N poles. Therefore, a magnetic field line passing through the electrodes 35a to 35f is formed between the surfaces of the first magnets 42a to 42f and the surfaces of the second magnets 43a to 43f. -13- 200538568 (10) The positions inside the electrodes 3 5 a to 3 5 f on the second magnets 4 3 a to 4 3 f are respectively arranged with a material of permeabi 1 ity (in this system Magnetic bodies 36a to 36f with a purity of 99.8% pure iron), and the magnetic lines of force passing through the electrodes 35a to 3f are attracted to the targets 3a to 3f by the magnetic bodies 36a to 36f, And pass through the surfaces of the targets 3 1 a to 3 1 f.

The same magnetic poles of the first magnets 42a to 42f of each of the sputtering sections 30a to 3Of are located on the same surface side. Therefore, the polarities of the target 3 1a to 3 1 f sides of the first magnets 42a to 42f are all The N pole may be either the S pole. As described above, the magnetic systems of the magnetic poles on the same surface side of the second magnets 43a to 43f as the first magnets 42a to 42f are opposite to those of the first magnets 42a to 42f, so the targets 31a to 3 of the first magnets 42a to 42f. When the polarity on the If side is all N, the polarities on the targets 31a to 3f of the second magnets 43a to 43f are all S poles, and when the polarity on the If 31a to 3f of the first magnets 42a to 42f are all on the If side, In the case of the S pole, the polarities of the targets 3 1 a to 3 1 f of the second magnets 4 3 a to 4 3 f are all N poles. Therefore, magnetic lines of force are formed between the first magnets 42a to 42f and the second magnets 43a to 43f in the same sputtering portions 30a to 3Of, but between adjacent first magnets 42a to 42f in different sputtering portions 30a to 30f. There were no magnetic lines of force formed between them. The sputtering source 3 includes auxiliary magnetic field forming means 15a and 15b. The auxiliary magnetic field forming means 15a and 15b are constituted by an elongated rod-shaped magnet having a length approximately equal to the length of the first magnets 42a to 42f, and the first magnets 42a are arranged along the longitudinal direction of the first magnets 42a to 42f. Up to 42 f -14- 200538568 (11) outside the area. The auxiliary magnetic field forming means 15a, 15b are located at the same height as the first magnets 42f and the second magnets 43a to 43f. In Fig. 1, symbols 42a and 42f indicate the first magnets at the head and the end of the first magnets 42a to 42f. Of the two long sides of the iron 4 2a, 42f located at the front and end of the rank, the end face is the end face instead of the side end face facing the center of the rank. The surface system is in close contact with or separated from the auxiliary magnetic field forming means 15a.

FIG. 3 shows the magnetic pole positions of the auxiliary magnetic field forming means 1 5 a and 1 5 b, which is one of the magnetic pole relationships between the first magnets 42 a to 42 f, the second magnet 4 3 f, and the auxiliary magnetic field forming means 1 5 a, 1 5 b. At the thickness end, that is, on the front side and the back side, when the surfaces facing the same side as the surfaces of the first magnet 42f and the second magnet 43a to 43f are provided, the back surfaces of the auxiliary magnetic field forming means 15a and 15b are closely contacted. 16a, 16b. Therefore, the magnetic field lines generated from the magnetic poles on the auxiliary magnetic field forming means 15a and 15b pass through the internal sounds of the yokes 16a and 16b. The magnetic pole system on the surface side of the auxiliary magnetic field forming means 15a and 15b. In contrast to the magnetic properties of the magnetic poles on the surface side of the first magnets 42a to 42f, when the magnetic properties of the magnetic poles on the surface side of the first magnets 42a to 42f |, the magnetic poles on the surface side of the auxiliary magnetic field forming means 1 5 a, 1 5 b When the N pole is the S pole of the magnetic pole on the surface side of the first magnets 42a to 42f, the magnetic force on the surface side of the auxiliary magnetic field forming means 15a, 15b is the S pole. The element of iron 42a is located on the surface in the first magnetic direction of the row and is set to 43a to 15b. The two irons 42a facing each other have the same magnetic properties as the surface on the back of the yoke. Because the magnetic polarity of the in-pole is -15-200538568 (12) As mentioned above, the auxiliary magnetic field forming means 15a and 5b are along the first magnets 4 2a and 4 2 f located at the outermost side. It is arranged so that the auxiliary magnetic field forming means 1 5 a and 1 5 b and the outermost first magnets 42 a and 42 f function as one magnet, and the surface of the magnetic field and the adjacent second magnet 4 3 a Between 3 and 4 3 f surfaces, magnetic lines of force passing through the outermost targets 3 1 a and 3 1 f will occur.

Here, the sides of the two long sides of the targets 3 1 a and 3 1 f at the front and end of the rank are not the side facing the center of the rank, but directly below the side facing outward. The end faces of the first magnets 42a and 42f are provided. Therefore, the auxiliary magnetic field forming means 1 5 a and 1 5 b are arranged on the outer side than the front and rear positions of the outermost rakes 3 1 a and 3 1 f, and pass through the outermost target 3 1 The magnetic fluxes of the magnetic lines of force on the surfaces of a and 3 1 f will not weaken even if they are located at the ends of the targets 3 1 a and 3 1 f. Fig. 6 shows that five sputter sections 30a to 3e are arranged in parallel. When the first magnets 15a and 15e located near the outermost side are arranged and the auxiliary magnetic field forming means 1a and 15b are arranged, The results of measuring the magnetic flux densities on the surfaces of the targets 3 1 a to 3 1 e are shown together with the positions of the magnetic field forming means 40 a to 40 e and the auxiliary magnetic field forming means 15 a and 15 b. In addition, the component symbols in FIG. 6 and FIG. 7 described below are respectively expressed as: Bv is a magnetic flux density perpendicular to the surface of the target 3 1 a to 3 1 e, and Bll is relative to the target 3 1 a The surface to 3 I e surface is the magnetic flux density in the parallel direction. The horizontal axis is the distance from the center when the center position of the 5 targets 3 1 a to 3 1 e is set to 0. -16-200538568 (13) Shaft magnetic flux density (G: Gauss (G au ss)). As shown in Fig. 6, the distribution of the magnetic flux density in the parallel direction is trapezoidal, and the distribution in the vertical direction shows a shape with two or more points crossing at 0 (three points here). By forming the magnetic field lines of the aforementioned magnetic field shape, even if the magnet is not shaken, in the sputtering process described later, almost the entire surface of each target 3 1 a to 3 1 e is sputtered, and it is estimated that almost no I Status of non-eroded parts. # Furthermore, by arranging the auxiliary magnetic field forming means 15a and Mb, the magnetic field strength at the same level as the central portion can be maintained even at the widthwise ends of the outermost targets 3 1 a and 3 1 f. In contrast, in Fig. 7, when the auxiliary magnetic field forming means 15a and 15b are not provided, the results of measuring the magnetic flux density on the surface of each of the rake materials 3 1a to 3 1e are compared with those of the magnetic field forming means 40a to 40e. Figure showing positional relationship. The parallel distribution of the magnetic flux density at this time is trapezoidal, and the distribution in the vertical I direction shows that the points crossing at 0 have a shape of more than 2 points, but • the magnetic field forming means 40a to 40e are adjacent to each other, Therefore, based on the magnetic field interference of the magnetic field forming means 40a to 40e, the magnetic field intensity is unbalanced at the two ends of the rows of the targets 31a to 3e, and the magnetic flux density is weaker than the central part of the sputtering source 3. Next, a process for forming a thin film on a substrate surface using the film forming apparatus 1 will be described. The film forming apparatus 1 has a vacuum exhaust system 12 and a gas supply system 13 connected to the vacuum tank 2 respectively. When the inside of the vacuum tank 2 is evacuated by the vacuum exhaust system 12, the target 3 ] A to 3 1 f are also evacuated between the opposite sides, and -17- 200538568 (14) vacuum ambient gas is formed in this area. The symbol s in FIG. 1 indicates the distance between the opposite sides of the targets 3 1 a to 3 1 f. In the film forming apparatus of the present invention], the targets 3 1 a to 3 are adjacent to each other. Between 1 f, there is no solid such as electrode or shield, or liquid such as cooling water, and the side surfaces in the longitudinal direction of the targets 3 1 a to 3 1 f are directly opposed to each other only through the ambient gas in the vacuum tank 2. Therefore, the length in the direction of the distance s between the sides of the vacuum environment gas formed between the opposing sides of the targets 3 1 a to 3 1 f is the same as the length of the distance s between the sides. Next, while the vacuum evacuation is continuously performed, the sputtering gas and the reactive gas are supplied from the gas supply system 1 to form a film-forming ambient gas at a predetermined pressure inside the vacuum tank 2. The substrate 5 is held in the substrate holder 4 in advance, and the substrate 5 and the vacuum chamber 2 are placed at the ground potential. The film is maintained on the 17 side. The ambient gas is turned on. The AC power source 17a is started as described above. When the AC power source 17a to 17c is used, When an AC voltage of 1 kHz to 100 kHz is applied, one of the two adjacent targets 31a to 3 1 f is placed at a positive potential with respect to the ground potential, and the other is placed at a negative potential with respect to the ground potential. The rake materials 3 1 a to 3 1 f placed at a positive potential function as anodes, and the sputtering surfaces of the targets 3 a to 3 1 f placed at a negative potential are sputtered to release sputtered particles. The potential of the leather materials 3 1 a to 3 1 f is switched from a positive potential to a negative potential, or from a negative potential to a positive potential according to the frequency of the AC voltage. Therefore, the targets 3 1 a to 3 1 f are alternately splashed. As a result, all targets 3 1 a to -18 200538568 (15) 3 1 f were subjected to sputtering. When the film-forming surface of the substrate 5 is set as the film-forming surface, the film-forming surface of the substrate 5 is arranged to face the sputtering surfaces of the respective targets 3 1 a to 3 1 f, and therefore is released from the sputtering surface. The sputtered particles reach the surface of the substrate 5, and react with the reactive gas on the surface of the substrate 5, and a film made of a reactant that reacts with the target material and the reactive gas grows on the surface of the substrate 5. As described above, no member is arranged between the adjacent targets 3 1 a to 3 1 f, and the distance s between the opposite sides of the targets 3 1 a to 3 1 f becomes very large. It is smaller than 1 mm and not more than 10 mm, and since the distance s is small, the area ratio of sputtered particles that are not released becomes small. Therefore, the sputtered particles reach the surface of the substrate 5 uniformly, and as a result, the film thickness distribution of the film formed on the surface of the substrate 5 becomes uniform. In addition, the film forming apparatus 1 has a shield serving as an anti-plate, and the shield 1 1 is configured to surround the area where the sputtering portions 30a to 30f are arranged and the auxiliary field forming means 15a. , 1 5 b, parts other than the diffusive surface are formed so that they are not exposed by the shield 1 1. Therefore, since the electrodes 35a to 35f or the magnetic field forming means 40a to 40f are shielded from the machine-projected particles by the shield n, the sputtered particles are not attached. (Examples) < Examples > The length-formed method was performed by 1,000 people using the film-forming apparatus 1 'sputtering a glass substrate 5 having a width of Hoomm 125 0 mm and a thickness of 0.7 mm in 30 seconds without heating' And a film thickness of -19- is formed on the surface of the substrate 5

200538568 (16) (100 nn)) of ITO (Indium Tin Oxide) film. Here, six targets 31a to 31f with a width of 200 mm, a length of 1700, and a thickness of In2〇3-10W% Sn02 (ITO) are used, and the targets 3 1 a to 3 1 f are arranged. It is parallel to the width direction of the substrate 5, and the distance s is 2 mm. The widths of the magnetic field forming means 40a to 40f are the same as those of the targets 3a to 31f, and are 200 m. The Ar supply gas of 2 0 0 sccm of the spray gas is supplied from the gas supply system 13 and the reactive hot B beans (Η 2 〇, Ο 2) are also supplied. In order to control the optimal flow rate, the flow rate of each reactive gas is adjusted between It changes between above Osccm and below 5 sccm to form a film-forming ambient gas of 0.7 Pa. The AC voltage is applied to gradually increase the output from 0kw, and finally to 20kw. The frequency of the AC voltage is 50 kHz. The film thickness of the ITO film after film formation was measured at 35 points. The measurement results are shown in Fig. 5. As shown in Fig. 5, the variation of the film thickness in the five planes of the substrate is small. The film thickness distribution is measured at 35 points, and a good 値 of 8% can be obtained. From this, it can be seen that the variation of the plasma is small during sputtering. In addition, during sputtering, no abnormal discharge was observed, and the discharge was stable. The particles mixed in the film after film formation were hardly visible. In addition, instead of using O 2 gas as the reactive gas, only H 2 O gas was used, except that the H 2 O gas flow rate was changed from Osccm to 5 sccm, and film formation was performed under the same conditions as in the above embodiment to form an ITO film, and The sheet resistance (Ω / □) of the ITO film after the film formation instant and the sheet resistance (Ω / □) of the heat treatment (annealing process) after the film formation were measured separately. After the film formation instant, , Even at-20-

200538568 (17) In the case of changing the gas flow rate, the sheet resistance does not change, and 値 is displayed. Compared with the case immediately after film formation, the resistance 値 is lower in the case of annealing, especially when the Η 2 gas flow rate is 2 s c c m, and the resistance is the lowest. In addition, using both H20 gas and 02 gas as the reactants, the Η 2 〇 gas flow rate was fixed to 2 sccm, and the 〇 2 gas flow was changed from 0 sccm to 2.0 sccm to perform the ITO film formation. The sheet resistance (Ω / □) after the film formation instant and after the annealing treatment is lower than the case after the film formation instant, and the sheet resistance is lower in the case of annealing, especially the 0 2 gas meteor is l.Osccm At this time, its sheet resistance is the best. It can be seen that the optimal flow rate of the reactive gas is: Η 2 0 gas is 2 sc 〇 2 gas is 1 S ccm. In addition, when the sheet resistance distribution of the film when the reactive gas flow rate is the optimum flow rate is obtained, the maximum sheet resistance 値 is 26.8Ω / □, 値 is 23.4Ω / □, and the average 値 is 25.1Ω / □. Resistance distribution 6.7%. From this, it can be seen that if the film-forming apparatus 1 of the present invention is used, an ITO film having a good resistance distribution can be obtained, and the sheet resistance distribution does not form a reflected shape or arrangement. Furthermore, the film-forming apparatus 1 of the present invention is electrically stable during long-term film formation, and no abnormal discharge is observed. After the discharge, after confirming the surfaces of the ITO 31a to 31f, no erosion area was seen on the surfaces of the targets 31a to 31f. < Comparative example > The higher the chip electric capacity is, the lower the phase contrast is. cm, ITO minimum soil chip electric target, put the target to a non--21-200538568 (18) as a film-forming device, the width of the configuration (130 mm wide) is smaller than the rod 3 1 a to 3 1 f A magnet is used in place of the magnetic field forming means 40a to 40f 'of the film forming apparatus 1 described above, and is shaken 80 nm toward the width of the target, and is controlled externally so that the magnetic field on the target surface changes with time. The rocking speed of the rod-shaped magnet is controlled at a constant speed of 10 m m / s e c.

The targets 3 1 a to 3 1 f are arranged at the same intervals using the same ones as in the above-mentioned embodiment. The film-forming ambient gas system was supplied with 200 sccm of Ar gas by the gas supply system 13 to form a pressure of 0.7 Pa. The potential of the adjacent targets 3 1 a to 3 1 f is switched between positive and negative at a frequency of 50 k Η z. After the power is gradually increased from Okw, when 10 kw of power is input, it can be confirmed visually on the target. To intense abnormal discharge, it becomes impossible to put in more power. After performing the discharge test, after confirming the inside of the vacuum chamber, abnormal discharge marks were confirmed in the shield 11. As can be seen from the above, if the film-forming device 1 of the present invention is used, abnormal discharge does not occur during sputtering, and a non-eroded region is not formed in the target. The above description has been made of the case where the adjacent target materials 3 1 a to 3 1 f are applied with the AC voltage by the same AC power sources 17 a to 17 c, but the present invention is not limited thereto. As shown in Fig. 4, it is also possible to apply an AC voltage to two different targets 3 1 a to 3 1 f that are not adjacent to each other from the same AC power source 17 a to 17 c. At this time, it is preferable to apply a voltage in such a manner that a potential different from that of the adjacent targets 3 1 a to 3 1 f is applied. The above is a description of the transparent conductive film made of ITO, but the film-forming purpose of the film-forming device of the present invention is not particularly limited. Various films such as metal thin films, transparent conductive films, and dielectric films can also be formed. Used to manufacture liquid-22-200538568 (19) PDP (Plasma display panel) or FED (Field Emission D isp 1 ay) or EL (E1 ec 11. · Lumininescence) ) And so on flat display.

The substrate 5 used in the present invention is not particularly limited, and various substrates such as a glass substrate, a substrate with a resin film, or a resin substrate may be used. According to the present invention, a plurality of targets 3 1 a to 3 1 f are used to increase the film formation area, so that a thin film can be formed on the surface of a large substrate having a planar area of 1 m 2 or more. When the magnetic field forming means 40a to 4 Of are disposed inside the same vacuum chamber 2 as the targets 31a to 3 If, it is preferable to place the magnets 42a to 42f, 43a to 43f, and the yoke 41a to 41. The surface of f is applied with a material or surface treatment that does not affect the film quality after being sputtered into a film, and a method for bonding it to a rolled material. Furthermore, since it is in the same ambient gas as the discharge space, a plasma is not generated in the space between the S and N poles of the magnetic field forming means 40 a to 40 f, so that it is non-magnetic and is applied. It is advisable to fill the space between the S and N poles for the surface-treated materials that do not affect the film quality after sputtering. The above is a description of the case where the magnetic bodies 36a to 36f are arranged inside the electrodes 35a to 35f. However, the present invention is not limited to this, as long as the magnetic field lines of the magnetic field shape shown in FIG. For example, the magnetic bodies 36a to 36f may be used. In addition, when the magnetic bodies 36a to 36f are arranged, their positions are not particularly limited, and for example, the magnetic bodies 36a to 36f may be arranged in the first and second magnets 42a to 42f. The two magnets 43a to 43f are above the same yokes 41a to 4] f. -twenty three-

200538568 (20) In addition, the shape, arrangement, and number of the first magnets 4 2 a to 4 2 f and the second magnets are not particularly limited as long as the magnetic field lines of FIG. 6 (i) are formed as described above. The length of each of the materials 3 1 a to 3 1 f is larger than the progress rate, and an example thereof is more than 1500 mm and less than 2000 mm. One example of the width of the materials 31 a to 3 1 f is 100 mm or less. An example of the number of targets is the number of cathodes W, which is expressed by the number of targets X the number of targets X the distance between the targets. The number of bases is an example, and an example is the phase of 1 2 0 0 mms W $ 1 9 0 0 mm Examples of mutually facing side surfaces of the adjacent targets 3 1 a to 3 1 f are 1 mm or more and 10 mm or less'. An example of the distance from the target 3 j a surface to the film-forming surface of the substrate 5 is 300 mm or less. The sputtering surfaces of the rake materials 3 1 a to 3 1 f are preferably arranged. Although the thickness of the rake materials 3 1 a to 3! F is not particularly limited, it is 5 mm or more and 30 mm or less. If a cooling means is attached to the electrodes 35a to 35f, the materials 3 1 a to 3 1 f are sputtered. The thickness of the mounting target 3! Poles 3 5 a to 3 5 f is not particularly limited, but it is more than $ and less than 30 mm. An example of the insulating plate 33a for electrically insulating the targets 31a to 3If and the electrodes 35a to 40f to 40f is 2m m or more and 0nm or less. • The length of the film substrate shown in the magnetic field shapes 43a to 43f. In addition, the number of units on each target, 400 mm m, is greater than the width of the target + the width of the target plate. The distance from s to 3 1 f is more than 60 mm. It is determined on the same plane, but one example can cool the target a to 3 1 f. The one is 5 mm 35 f and the magnetic field is 33 f. -24- 200538568 (21) In addition, inside the vacuum tank 2, a gas tube is arranged along the long side of the target 3 1 a to 3 1 f, and the gas tube is used to pass the adjacent target 3 1 a It allows the sputtering gas or reactive gas to circulate to 3 1 f, and directly supplies the gas to the discharge space, so it becomes difficult to fall into the supply rate limit. At this time, if an exhaust port is provided around the side of the substrate, the gas supplied to the discharge space can be quickly exhausted.

An example of power supply to the targets 3 1 a to 3 1 f is an output density P of 1 W with respect to two targets 3 1 a to 3 1 f connected to an AC power source 17a to 17c. / cm2 or more, 10W / cm2 or less. When the metal targets 3 1 a to 3 1 f are used, an example of the output density P is 5 w / cm 2 or more and 40 W / cm 2 or less. In addition, as an example of supplying power to the targets 3 1 a to 3 1 f, in order to adjust the film thickness distribution on the substrate, among the targets 3 1 a to 3 1 f arranged in a plurality, for the target located at the outermost side The materials 3 1 a and 3 1 f are supplied in a manner of 100% or more and 130% or less of the supply amount to the targets 3 1 c and 3 1 d located at the center. When sputtering is performed, an example of the voltage applied to the targets 3 1 a to 3 1 f is an AC voltage of -300 0 V or more with respect to the ground potential. The above description is based on the case where one slender magnet constitutes one auxiliary magnetic field forming means 1 5 a and 15 b, but the present invention is not limited to this, and a plurality of magnets may constitute one auxiliary magnetic field forming means, or each The magnet is arranged along the longitudinal direction of the target outside the region where the magnetic field forming means is arranged. In addition, the auxiliary magnetic field forming means 1 5 a and 1 5 b are adjacent to -25-

200538568 (22) When the first magnets 42a and 42f are in close contact, they can be integrally formed. In the above-mentioned film forming apparatus I, even when the magnetic field does not move 4 a to 4 0 f and the auxiliary magnetic field forming means 1 5 a, 1 5 b is sputtered, although almost the entire surface of the target 3 1 a to 3 1 f is exposed to the part where the magnetic flux density on the surface of the target 3 1 a to 3 1 f is not uniform. The difference in the amount due to sputtering ># In order to solve this problem, the film formation of the second embodiment of the present invention is shown in FIG. 9. This film forming apparatus 7 has all the configurations of the above-described film forming apparatus 1 having a magnetic body 36a. The film forming device 7 is provided with sections 14 and 4, each of the magnetic field forming means 4 a to 4 0 f and the auxiliary magnetic field 1 5 a and 1 5 b are connected to the moving means 14 and move with the moving means 0 and the moving means 14 are borrowed. A motor (not shown) is configured to move relative to the target 3 in the plane of the flat surfaces 3 1 a to 3 1 f. Therefore, each of the magnetic field forming means 40 a to 40 f and the field forming means 15 a, 1 5 b moves in a plane parallel to the targets 3 1 a to 3. Therefore, the distance between the plane of the target 3 1 a to 3 1 f and the plane of the magnetic field forming hand 40f is not changed. In addition, each of the magnetic fields 40 a to 40 f is fixed to each of the auxiliary magnetic field forming means 15 a and 15 b, and the moving means 14 is stationary with respect to the moving means 14. The relative positional relationship between 4 0 f and each auxiliary magnetic field 1 5 a, 1 5 b has not changed. So the target is $ 1 iron. ^ Forming means include continuous injection, but &, magnetic flux: raw film thickness: placement display: 3 6f There are moving hand forming means 1 4 to move to the target 1 a to 3 1 f together with the auxiliary The surface segment 40a to the forming means of the magnetic 1 f are set to the same state, and the shape of the magnetic flux density on the surface is not changed because of the forming means 3 1 a to -26- 200538568 (23) 3 1 f. The relative positional relationship between the opening shape and the surface of the rake material 3 1 a to 3 1 f will change. Here, the moving direction of the moving means 14 is along the arrangement direction of the targets 3 1 a to 3 1 f. Therefore, the magnetic field forming means 40 a to 40 f and the auxiliary magnetic field forming means 15 a, 1 5 b are along the target. The arrangement direction of the materials 3 1 a to 3 1 f moves. φ Figure 10 (a) shows the initial state where the magnetic field forming means 40a to 40f are arranged at the front and back positions of the corresponding targets 3 1 a to 3 1 f. When the moving means 14 moves, as shown in Figure 10 ( As shown in b), the magnetic field forming means 40a to 40f will be offset from the front and back positions of the corresponding targets 31a to 31f, and the ends of the targets 3 1 a and 31 f at the front or the end of the row are from the magnetic field forming means 40a. To 4 0f, but the auxiliary magnetic field forming means 1 5 a and 1 5 b are brought closer to the positions directly below the ends by moving. As a result, for the surfaces of the respective targets 3 1 a to 3 1 f, Make the magnetic field lines pass from one end # to the other end in the moving direction. Next, a film forming process using the film forming apparatus 7 will be described. During the exchange of the substrate 5 and the new substrate 5 after the completion of film formation, a magnetic field is applied to the front and back positions of the targets 3 1 a to 3 1 f adjacent to the targets 3 1 a to 3 1 f corresponding to the above. The amount of movement D that the forming means 4 0 a to 4 0 f does not enter moves the magnetic field forming means 40 a to 4 Of and the auxiliary magnetic field forming means 5 a and 15 b, and when forming a film on the surface of a new substrate 5, Magnetic field forming means 40a to 40f and auxiliary magnetic field forming means i5a, 15b -27-

200538568 (24) The sputtering is performed while the target materials 3 1 a to 3 1 f are stationary. When the relationship between the shape of the magnetic field and the position of the target 3] a to 3 1 f surface changes, the higher magnetic flux density portion on the surface of the target 3 1 a to 3 1 f moves. Therefore, the target 3 1 a The smaller the amount of film thickness reduction to 3 1 f, the more sputtering will be received. Conversely, the portion with the larger film thickness reduction will receive less sputtering. When the magnetic field forming means 40a to 40f and the auxiliary magnetic field means 1 5 a and 1 5 b are moved repeatedly and the target 3 1 a to 3 1 f is sputtered, the surface of 3 1 a to 3 1 f will uniformly reduce the film. It is thick, so the use efficiency of the targets 3 1 a to 3 is high. In addition, in the film forming apparatus 1 of FIG. 1, since the magnetic bodies 36 a to 36 f are arranged in the sputtering section to 30 f, the magnetic flux densities of the materials 31 a to 3 If are uniform, while the targets 3 1 a to 3 The film thickness of 3 1 f is small, but in the film forming apparatus 7 of the second embodiment, even if the bodies 36 a to 36 f are not provided, the magnetic field forming means 40 a to 40 f and the auxiliary forming means 1 5 a and 1 5 are used. b moves, as a result, the thickness reduction of the targets 3 1 a to 3 1 f is uniform. The above is a description of the case where the magnetic field forming means 40a to 40f and the auxiliary magnetic field sections 15a and 15b move together, but the present invention is not limited to this. When the targets 3 1 a to 3 1 f are sputtered, if they are not changed, The relative positional relationship between the forming means 40a to 40f and the auxiliary magnetic field forming means 15a, 15b, but if the positional relationship with respect to the target 3 1a to 3 1f is changed, the magnetic field forming means 40a to the auxiliary The magnetic field forming means 1 5 a, 1 5 b. Part of the variability club will form the target 3 1 f 30a The surface of the film is reduced by the magnetic magnetic field, and the non-local magnetic field is opposite each other

200538568 (25) In addition, the magnetic field forming means 40a 3 and the means 1 5 a and 1 5 b can be made to stand still, and the target 3 1 a can be changed without changing the magnetic field forming means 4 a a to 4 0 f and 15 a, It is also possible to move 3 1 a to 3 1 f relative to the relative positional relationship of 1 5 b. [Brief description of the drawings] Fig. 1 is a view illustrating film formation of an example of the present invention. Fig. 2 is a perspective view illustrating an example of a sputtering source. Fig. 3 is a diagram illustrating a magnetic field forming means and an auxiliary surface view. Figure 4 illustrates the target and AC power. Fig. 5 is an explanatory diagram of a film thickness distribution. > FIG. 6 is an explanatory diagram of the relationship between the magnetic flux density and the position when the magnetic field forming means and the auxiliary # are arranged. Fig. 7 is an explanatory diagram when a magnetic field forming means is arranged. Fig. 8 is a diagram illustrating a film forming apparatus of a conventional technique. Fig. 9 is a diagram illustrating a second embodiment of the present invention. Fig. 10 is a cross-sectional view illustrating (a) the initial state of the second embodiment of the present invention and (b) the state after the movement. 4of and the auxiliary magnetic field are moved to 3 1f, or the auxiliary magnetic field forming means is used to make a cross-sectional view of the target device. Illustration. Cross-section of magnetic field forming means Other examples of connection relationship When assisting magnetic field forming means, magnetic flux density vs. position. Section of the film forming device Example of film forming device -29- 200538568 (26) [Description of main component symbols] 1, 7, 1 0 1 Film forming device 2, 1 0 2 Vacuum tank 3 Sputter source 4 Substrate holding With 5, 10 5 substrate

11 " 111 Shield 1 2, 1 1 2 Vacuum exhaust system 1 3, 1 1 3 Gas supply system 14 Moving means 1 5 a, 1 5 b. Auxiliary magnetic field forming means 1 6 a, 1 6b Yoke 17a to 17c, 117a to 117e Power supply 30a to 30f Sputtering sections 31a to 31f, 131a to 131e Target 3 3a to 3 3f Insulating plates 35a to 35f, 135a to 135e Electrodes 3 6a to 3 6f Magnetic bodies 40a to 40f, 140a to 140e Magnetic field forming means 4 1 a to 4 1 f Yoke 42a to 42f Ring magnet (first magnet) 43a to 43f Rod magnet (second magnet) -30-

Claims (1)

200538568 (1) X. Patent application scope 1. A film-forming device having: a vacuum tank; a plurality of plate-shaped targets with side directions; and a current source for applying an AC voltage to the targets, and the targets Among the materials, very different AC voltages are applied to different targets by the same AC power source, > the plurality of targets are in a state where the sputtering surface faces the same direction Φ the long sides of the adjacent targets The side surfaces of the direction are arranged so as to directly face each other only through the ambient gas in the empty groove. 2. For example, the film-forming apparatus of the scope of patent application, wherein the distance between the opposite side surfaces is set to 1 mm or more and 10 mm or less. 3. For the film-forming device in the first or second scope of the patent application, the frequency of the AC power supply unit is 1 kHz or higher and 100 kHz or lower. • 4. A film-forming device comprising: a vacuum tank; and a plurality of elongated plate-shaped targets arranged inside the vacuum tank, wherein each of the targets is arranged parallel to each other in a direction of a growth direction, and The front and back positions of the targets are each provided with elongated magnetic field forming means along the long side of the target, and outside the area where the magnetic forming means is disposed outside the front and back positions of the target. The long and narrow auxiliary magnetic field forming means are arranged along the longitudinal direction of the aforementioned target. The long-crossing property J is true to each other, and the upper square is -31-200538568 (2) 5 In the film forming apparatus, each of the magnetic field forming means has a plurality of magnets, and among the plurality of magnets, a magnetic pole of a surface of the magnet disposed adjacent to the auxiliary magnetic field forming means toward the target side is set to be in contact with the target. The magnetic poles on the surface of the auxiliary magnetic field forming means facing the target have the same polarity. 6 · If the film-forming device in the 4th or 5th of the scope of patent application, #, there is a moving means for relative movement of the aforementioned magnetic field forming means and the auxiliary magnetic field forming means before ~ J relative to the aforementioned target. -32-