CN101109069B - Cooled dark space shield for multi-cathode design - Google Patents
Cooled dark space shield for multi-cathode design Download PDFInfo
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- CN101109069B CN101109069B CN2007101232896A CN200710123289A CN101109069B CN 101109069 B CN101109069 B CN 101109069B CN 2007101232896 A CN2007101232896 A CN 2007101232896A CN 200710123289 A CN200710123289 A CN 200710123289A CN 101109069 B CN101109069 B CN 101109069B
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
A cooled dark space shield for a multi-cathode, large area PVD apparatus is disclosed. For multi-cathode systems, a dark space shield between adjacent cathodes/targets may be beneficial. The shields may be grounded and provide a path to ground for electrons present within a sputtering plasma. Because the shields are between adjacent targets, the grounded shields may contribute to the formation of a uniform plasma within the processing space by acting as anodes. As the temperatures in the chamber fluxuate between a processing temperature and a downtime temperature, the shields may expand and contract. Cooling the shields reduces the likelihood of expansion and contraction and thus, reduces the amount of flaking that may occur. Embossing the surface of the shields may reduce the amount of material deposited onto the shields and control the expansion and contraction of the shields.
Description
Technical field
Embodiments of the invention relate generally to the physical vapor deposition (PVD) system with the cooled dark space shield that is arranged between the adjacent sputtering target.
Background technology
The PVD that utilizes magnetron be a kind of on substrate the method for deposition material.In PVD handles, can carry out electrical bias voltage to target, make that the ion that produces in the treatment zone can be with enough energy bombardment target surfaces with knocking-on from target atom.The processing that makes target bias cause producing plasma body, causes ion bombardment target surface and remove atom from the target surface is commonly called sputter.The atom that sputters is generally advanced to the substrate for the treatment of the sputter coating, and this atom that sputters is deposited on the substrate.Alternatively, gas such as nitrogen in atom and the plasma body react, with deposited compound on substrate reactively.Reactive deposition is through being usually used in forming the thin blocking layer or the crystal nucleation layer of titanium nitride or tantalum nitride on substrate.
Direct current (DC) sputter with exchange the form that (AC) is sputtered to sputter, wherein, target is biased to attract ion to target.Target can be biased between-100V to the negative bias the between-600V, to attract the positive ion of working gas (for example argon gas) to target, with sputtered atom.Usually, the side of sputtering chamber is coated with guard shield to protect chamber wall not by sputtering sedimentation.Thereby guard shield electrically ground connection provides the anode opposite with target cathode, capacitively to connect the plasma body that produces in target power supply and the sputtering chamber.
In the sputter procedure, material is by sputter and deposit on the surface of the exposure in the chamber.The material that deposits on the exposed surface of chamber may peel off and pollute substrate.Therefore, prior art need reduce the pollution to substrate.
Summary of the invention
The invention discloses a kind of cooled dark space shield that is used for many negative electrodes, large-area PVD device.For many cathod systems, the dark space shield between adjacent negative electrode/target is very useful.Guard shield can ground connection and the path of ground connection is provided for the electronics that occurs in sputter plasma.Because guard shield is between adjacent target, the guard shield of ground connection can help to form uniform plasma body as anode in handling the space.Because the temperature in the chamber fluctuates between treatment temp and shutdown temperature, guard shield can expand and shrink.Guard shield cooled off reduce the possibility that expands and shrink, thereby reduced contingent quantity of peeling off.Embossing is carried out on the surface of guard shield can be reduced expansion and the contraction that deposits to the material quantity on the guard shield and control guard shield.
In one embodiment, a kind of sputtering target support frame assembly is disclosed.Described assembly comprises: around the edge part of a plurality of targets settings; One or more beams are crossed over a length between adjacent target, described one or more beams are connected with described edge part; One or more dark space shields are connected with described one or more beams; And one or more cooling channels are connected with described one or more beams.
In another embodiment, a kind of sputter equipment is disclosed.Described sputter equipment comprises: a plurality of sputtering targets and be connected sputtering target support frame between a pair of sputtering target in a plurality of sputtering targets.Described sputtering target support frame comprises: one or more beams have the flange that is used to support described a pair of sputtering target; One or more cooling channels are connected with described one or more beams; And one or more gripping units, be connected with described one or more beams, make described a pair of sputtering target be connected between described one or more gripping unit and the described flange.
In yet another embodiment, a kind of embossing dark space shield is disclosed.Described guard shield comprises: boot main body has at least one curved surface; And, a plurality of on the boot main body extended protuberance.
In another embodiment, a kind of sputtering method is disclosed.Described method comprises: be connected a sputtering target at one or more gripping units with supporting between the beam flange, described beam is connected with dark space shield; Press close to described dark space shield and described beam is provided with the cooling channel; Cooling fluid is flowed in the cooling channel; And, from sputtering target sputter material on substrate.
Description of drawings
In order to understand above-mentioned feature of the present invention in more detail, the present invention who top summary description is crossed below in conjunction with embodiment more specifically describes, and part embodiment is shown in the drawings.But should be noted that only be exemplary embodiments of the present invention shown in the accompanying drawing, therefore can not be as qualification to scope of the present invention, the present invention also comprises other equivalent embodiment.
Fig. 1 is the cross-sectional view of the PVD device 100 of one embodiment of the present of invention;
Fig. 2 is the upward view of the sputter target assemblies 200 of one embodiment of the present of invention;
Fig. 3 is the schematic perspective view of the frame assembly 300 of one embodiment of the present of invention;
Fig. 4 is the cross-sectional view that is arranged on the beam assembly between the adjacent target assembly of one embodiment of the present of invention;
Fig. 5 is the cross-sectional view that is arranged on the bar assembly between the adjacent target assembly of an alternative embodiment of the invention;
Fig. 6 is the schematic perspective view of the dark space shield 600 of one embodiment of the present of invention;
Fig. 7 A is the vertical view that is formed on the protuberance 700 in the dark space shield embossed surface of one embodiment of the present of invention;
Fig. 7 B is the cross-sectional view of the protuberance 700 among Fig. 7 A.
In order to be beneficial to understanding, under possible situation, the common similar elements is represented with identical Reference numeral among the figure.Should be appreciated that disclosed in one embodiment element can advantageously be applied among other the embodiment under situation about not specifying.
Embodiment
The invention discloses a kind of cooled dark space shield that is used for many negative electrodes, large-area PVD device.For many cathod systems, the dark space shield between adjacent negative electrode/target is very useful.Guard shield can ground connection and the path of ground connection is provided for the electronics that occurs in sputter plasma.Because guard shield is between adjacent target, the guard shield of ground connection can help to form uniform plasma body as anode in handling the space.Because the temperature in the chamber fluctuates between treatment temp and shutdown temperature, guard shield can expand and shrink.Guard shield cooled off reduce the possibility that expands and shrink, thereby reduced contingent quantity of peeling off.Embossing is carried out on the surface of guard shield can be reduced expansion and the contraction that deposits to the material quantity on the guard shield and control guard shield.
The present invention is narrated explanatoryly, and can be applied to handle in the PVD system of large-area substrates, as Applied Materials, and Inc., Santa Clara, the Subsidiary Company of California
The PVD system that is produced.But should be appreciated that sputtering target also can be applied in other the system configuration, comprise that those are configured to handle the system of big area circular substrate.The U.S. Patent application No.11/225 that on September 13rd, 2005 submitted, 922 have illustrated and a kind ofly can use example system of the present invention, introduce its full content here as a reference.
Along with the increase in demand to bigger panel display apparatus, the size of substrate must increase thereupon.Along with the increase of substrate size, the size of sputtering target also must increase thereupon.Concerning panel display apparatus and solar panel, length is very usual greater than 1 meter sputtering target.It is very difficult and expensive utilizing ingot metal to produce large-sized monomer sputtering target.For example, molybdenum plate (that is, 1.8m * 2.2m * 10mm, 2.5m * 2.8m * 10mm etc.) that very difficult acquisition is big and cost are quite high.Produce large-area molybdenum target and need a large amount of fund inputs.(the monomer molybdenum target that is 1.8m * 2.2m * 10mm) may need need $15,000,000 to production a slice big area.Therefore, only taking cost into account, utilize a plurality of less targets and realize that the deposition uniformity of big area sputtering target is very useful.A plurality of targets can have identical or different compositions.
The increase of substrate and chamber size has brought various challenges, and one of these challenges are exactly to deposit uniformly.Electronics in the sputter plasma is adsorbed to the element of ground connection in the device.Usually, chamber wall and pedestal or base plate supports body are grounded, thereby play anodize, and in contrast, sputtering target plays cathodic process.
The chamber wall that plays the ground connection of anodize attracts electronics from plasma body, therefore, can be easy to form highdensity plasma body near chamber wall.Near the chamber wall high density plasma can increase the deposition near the substrate of chamber wall and reduce away from the deposition on the substrate of chamber wall.On the other hand, the pedestal of ground connection also plays the anodic effect.Pedestal can be crossed over and handle the most of length of spatial.Thereby pedestal not only can provide grounding path for the electronics at susceptor edges place, and can provide grounding path for the electronics at pedestal middle part.Because each anode, no matter be chamber wall or pedestal, all play a part identical and disseminate plasma body equably across handling the space as anode, be positioned at the pedestal middle part the grounding path balance be positioned at susceptor edges and chamber wall grounding path cancel out each other.By plasma body is distributed equably, can realize uniform deposition across substrate in handling the space.
When substrate is insulated substrate (as glass or polymer), substrate is non-conductive, thereby electronics can't pass substrate.Consequently, when substrate basically during the covered substrate supporter, the base supports body can not provide enough anode surfaces.
To large-area substrates, as solar panel or be used for the substrate of panel display apparatus, the substrate size that the grounding path of pedestal is passed in blocking-up can be very large.In the flat pannel display industry, the substrate that is of a size of 1m * 1m is very common.To the substrate of 1m * 1m, the grounding path that passes pedestal has been blocked 1 square metre area.Therefore, the chamber wall that is not covered by substrate and the edge of pedestal are unique grounding paths of the electronics in the plasma body.Near the center of substrate, there is not grounding path.To large-area substrates, can near the edge of chamber wall that is not covered and pedestal, form highdensity plasma body by substrate.Near chamber wall and the susceptor edges high density plasma can make near the plasma body the treatment zone center that does not have grounding path weaken.Do not having near the treatment zone center under the situation of grounding path, may make plasma body inhomogeneous, and therefore the deposition on large-area substrates also may be uneven.
To obtain uniform plasma body in order assisting in ensuring that, the anode except pedestal and chamber wall can be set in chamber.For the many cathod systems that use a plurality of sputtering target band/plates, anode can be arranged between adjacent sputtering target band/plate.
Fig. 1 is the cross-sectional view of the PVD device 100 of one embodiment of the present of invention.Device 100 comprises the substrate 104 that is supported on the pedestal 102, and wherein said pedestal 102 is inclusive in the chamber wall 116 of device 100.Chamber wall 116 ground connection.Substrate 104 is oppositely arranged with a plurality of sputtering target 106a～106f.Between substrate 104 and target 106a～106f, be treatment zone 112.Chamber wall 116 is protected not to be deposited by guard shield.
In one embodiment, each sputtering target 106a～106f has corresponding backing plate 108a～108f.In another embodiment, each sputtering target 106a～106f can be connected with a single public backing plate.Though will the present invention will be described in conjunction with the embodiment of front, should be appreciated that this explanation can be applied to the embodiment of single public backing plate equally.
In backing plate 108a～108f, be provided with the cooling channel.Cooling fluid flow overcooling passage with the temperature of control backing plate 108a～108f, and is controlled the temperature of sputtering target 106a～106f thus.Cooling fluid can be a conventional arbitrarily cooling fluid well known in the prior art.In one embodiment, cooling fluid is a water.In another embodiment, cooling fluid is a gaseous state.
Be provided with magnetron 118 at the magnetoelectricity tube chamber 120 that is positioned at backing plate 108a～108f back.Magnetron 118 can be fixed magnetron assembly or magnetron assembly movably.In one embodiment, magnetron 118 is a plurality of magnetron assemblies, and wherein, the quantity of magnetron 118 is corresponding to the quantity of target 106a～106f.When the quantity of magnetron 118 during, can control and adjust the magnetic field of passing each independent target corresponding to the quantity of target 106a～106f.
Target 106a～106f can be bonded on backing plate 108a～108f by tack coat 122.Tack coat 122 can be a common arbitrarily known matrix material in the prior art.The U.S. Patent application No.11/224 that submits on September 12nd, 2005 discloses a kind of can being used in 221 target 106a～106f is bonded to exemplary jointing material on backing plate 108a～108f, is incorporated herein its full content as a reference.
Sputtering target 106a～106f can be arranged on the frame assembly.Frame assembly can have one or more and cross over the beam 124a～124e that handles space 112.Frame assembly can also have the flange (ledge) 134 that is connected with described frame assembly.Sputtering target 106a～106f can be arranged on described flange 134 and the beam 124a～124e, makes described sputtering target 106a～106f be supported on described flange 134 and the beam 124a～124e.Sputtering target 106a～106f can be by electrical insulator 140 and beam 124a～124e insulation.
Each target 106a～106f can be connected with corresponding power supply 128a～128f, makes that each target 106a～106f can be powered independently.By power supply 128a～128f separately is provided for each target 106a～106f, can control the power rank of each sputtering target 106a～106f individually, to realize uniform deposition.Power supply 128a～128f can make direct current, interchange, pulse, radio frequency or their combination.Described device can be by controller 132 controls.The U.S. Patent application No.11/428 that on June 30th, 2006 submitted, 226 disclose a kind of exemplary power configuration, are incorporated herein its full content as a reference.
Constituting the beam 124a～124e of frame assembly and flange 134 can ground connection, makes frame assembly play the anodic effect.In one embodiment, the frame assembly that comprises beam 124a～124e and flange 134 can be made of integrative-structure.Each beam 124a～124e has the dark space shield 126a～126e that is attached thereto accordingly.Dark space shield 126a～126e protection beam 124a～124e avoids unnecessary deposition, and can be electrically connected to beam 124a～124e, makes dark space shield 126a～126e play the anodic effect.In one embodiment, dark space shield 126a～126e can be by making with the sputtering target identical materials.In another embodiment, dark space shield 126a～126e can go up aluminium by stainless steel process shot peening (bead blasted) and by flame plating (flamesprayed) or make with the sputtering target identical materials.
Fig. 2 is the upward view of the sputter target assemblies 200 of one embodiment of the present of invention.A plurality of sputtering target 204a～204f can be provided with and be set in the frame assembly 202 at interval across sputter target assemblies 200.Frame assembly 202 can comprise one or more beams 206.In one embodiment, frame assembly 202 is made of unitary piece of material.Though should be appreciated that to show six sputtering target 204a～204f, also can use sputtering target 204a～204f more or still less.In addition, though the sputtering target 204a～204f that illustrates is the sputtering target band, the present invention also can utilize other configuration.For example, can use sputtering target brick and the sputtering target band that the sputtering target brick is connected together formation.The U.S. Patent application No.11/424 that submits on June 15th, 2006, the U.S. Patent application No.11/424 that on June 15th, 467 and 2006 submitted, described being joined together to constitute the exemplary sputtering target brick of sputtering target band in 478, the full content of introducing these two patent applications here as a reference.
Fig. 3 is the schematic perspective view of the frame assembly 300 of one embodiment of the present of invention.Frame assembly 300 can comprise the beam 304 that one or more externally extends between the frame part 302.Sputter target assemblies 306 can be placed in the opening 308 in frame assembly 300, on the flange 310 that is arranged on beam 304 and the external frame body portion 302.
Fig. 4 is the cross-sectional view that is arranged on the beam assembly between the adjacent target assembly of one embodiment of the present of invention.Each target assembly comprises and utilizes tack coat 406a, 406b to be bonded to sputtering target 402a, 402b on backing plate 404a, the 404b.The temperature of backing plate 404a, 404b can be controlled by one or more cooling channels 408 that can be arranged among backing plate 404a, the 404b.Backing plate coating 410 is arranged on the dorsal part of backing plate 404a, 404b, is beneficial to the magnetron (not shown) and crosses over moving of backing plate 404a, the 404b back side, and make the magnetron insulation.
The unique design of many negative electrodes PVD device makes anode be placed on and handles the outside, space, still help to realize simultaneously plasma uniformity.For crossing over a plurality of sputtering target bands (perhaps its own backing plate of each sputtering target) that public backing plate is provided with at interval, between adjacent sputtering target, there is the interval.Electric arc is avoided producing in interval between the sputtering target.Because anode helps to reduce electric arc, it can be favourable therefore placing anode in the interval between adjacent sputtering target.Because beam assembly 412 can not blocked any sight line path (line ofsight path) between sputtering target 402a, 402b and the substrate, it is favourable placing beam assembly 412 between sputter target assemblies.By beam assembly 412 contiguous sputtering target 402a, 402b are placed, can reduce anode any of substrate covered.
Being necessary to make beam assembly 412 to surpass sputtering target 402a, 402b extends in the processing space.Because material is from the outside sputter of sputtering target 402a, 402b, material may be advanced along all directions.Thereby the material that sputters from sputtering target 402a, 402b may be deposited on the beam assembly 412.Therefore, dark space shield 414 is connected with described beam assembly 412.Any material that sputters from sputtering target 402a, 402b can be deposited on the dark space shield 414, rather than on the beam assembly 412.Dark space shield 414 can be replaced and/or clean, thereby beam assembly 412 can unrestrictedly reuse.No matter when when needs are changed and/or clean dark space shield 414, can separate dark space shield 414 from beam assembly 412.Dark space shield 414 can be angled, to reduce the material quantity that may deposit on the dark space shield 414.
Temperature in the PVD device 400 can fluctuate between treatment temp and shutdown temperature.Treatment temp can be up to and makes chamber part become " red heat ".Shutdown temperature can hang down room temp.Along with the fluctuation of temperature, dark space shield 414 can expand and shrink.When dark space shield 414 expanded and shrinks, the material that deposits on the dark space shield 414 may peel off and pollute substrate.In addition, treatment temp may near or surpass the fusing point of sputter material.If any sputter material is fallen on the dark space shield 414 and reached the fusing point of sputter material, sedimentary material may and pollute substrate from dark space shield 414 drippages.The temperature of control dark space shield 414 is very favorable, because can reduce the expansion and the contraction of dark space shield 414 like this.In addition, the temperature of dark space shield 414 may be controlled to the fusing point that keeps below sputter material, thereby reduces any dropping that drips on the substrate.
In beam main body 426, be provided with at least one cooling channel 420.Thereby beam body 426 can be pressed close in cooling channel 420 and dark space shield 414 is provided with.Cooling channel 420 can be the continuous passage that passes the beam main body 426 of beam assembly 412, and perhaps it also can be a plurality of cooling channels 420.Cooling channel 420 sealed element 422 sealings are polluted substrate to guarantee cooling fluid can not enter into the processing space.Cooling fluid can be the cooling fluid of any routine well known in the prior art.In one embodiment, cooling fluid is a water.In another embodiment, cooling fluid is a gasiform.
Fig. 5 is the cross-sectional view that is arranged on the beam assembly between the adjacent target assembly of an alternative embodiment of the invention.Cooling channel 520 can be arranged in the engraving portion (carved out portion) of dark space shield 530, and the channel frame 514 that is cooled is surrounded.Thereby beam main body 526 is pressed close in cooling channel 520.
Fig. 6 is the schematic perspective view of the dark space shield 600 of one embodiment of the present of invention.In one embodiment, dark space shield 600 is embossed, makes to occur one or more protuberance 602,604 at it on the indoor processing spatial surface of pvd chamber.Protuberance 602,604 can be independently to be roughly foursquare protuberance 602, the orthogonal protuberance 604 of elongation or their combination.Protuberance 602,604 on the dark space shield 600 provides that sputter material may sedimentary less surface in deposition process.But the embossed surface of dark space shield 600 is favourable to any possible expansion and the contraction of dark space shield 600.In the variation of temperature process, can be that protuberance 602,604 rather than whole dark space shield 600 expand and contraction.Thereby protuberance 602,604 can reduce contingent quantity of peeling off.In one embodiment, the surface-area of protuberance 602 is about 25 square millimeters.With respect to making surperficial roughen simply by the treatment process as shot peening, therefore embossing is very favorable owing to provide bigger surface-area to make dark space shield 600 can deposit more material before replacing.The time that embossing can make dark space shield 600 continue to use reaches about the twice of shaggy dark space shield.
Fig. 7 A is the vertical view that is formed on the protuberance 700 on the dark space shield embossed surface of one embodiment of the present of invention.Fig. 7 B is the cross section of the protuberance 700 among Fig. 7 A.Protuberance 700 can have the top surface 704 of inclined surface 702 and general planar.In one embodiment, the angle with greater than about 25 degree of inclined surface 702 tilts.
The cooled dark space shield that anodize has been set between adjacent target in many negative electrodes PVD system is very favourable, because can reduce the homogeneity of covering and can increase plasma body like this.Dark space shield cooled off can reduce with embossing peel off or drip, thereby reduce pollution substrate.
Though top present invention has been described with reference to preferred embodiments, under the prerequisite that does not break away from base region of the present invention, can also design other more embodiment.Scope of the present invention is limited by following claim.
Claims (23)
1. sputtering target support frame assembly comprises:
Edge part around a plurality of targets settings;
One or more beams are crossed over a length between adjacent sputtering target, described one or more beams are connected with described edge part;
The dark space shield of one or more ground connection is connected with described one or more beams; And
One or more cooling channels are connected with described one or more beams.
2. assembly according to claim 1 is characterized in that, the dark space shield of described one or more ground connection is embossing.
3. assembly according to claim 2, it is characterized in that, the dark space shield of described one or more ground connection of embossing comprises the extended protuberance of dark space shield of a plurality of described one or more ground connection from this embossing, and described protuberance has a plurality of mutual angled surfaces.
4. assembly according to claim 3 is characterized in that the surface area of described protuberance is about 25mm
2
5. assembly according to claim 1 is characterized in that, also comprises the gripping unit that one or more and described one or more beams are connected.
6. assembly according to claim 5 is characterized in that, described one or more gripping units pass described one or more beam setting.
7. assembly according to claim 1 is characterized in that, the dark space shield of described one or more ground connection comprises one or more grooves that are used for being provided with therein described one or more cooling channels.
8. assembly according to claim 1 is characterized in that, described one or more beams comprise one or more grooves that are used for being provided with therein described one or more cooling channels.
9. assembly according to claim 1 is characterized in that, described edge part and described one or more beam are made of unitary piece of material.
10. assembly according to claim 1 is characterized in that, the dark space shield of described one or more ground connection removably is connected with described one or more beams.
11. a sputter equipment comprises:
A plurality of sputtering targets; And
The target support frame is connected between a pair of sputtering target in described a plurality of sputtering target, and described target support frame comprises:
One or more beams have the flange that is used to support described a pair of sputtering target;
One or more cooling channels are connected with described one or more beams; And
One or more gripping units are connected with described one or more beams, make described a pair of sputtering target be connected between described one or more gripping unit and the described flange; And
The dark space shield of the ground connection that is connected with described one or more beams.
12. device according to claim 11 is characterized in that, the dark space shield of described ground connection has embossed surface.
13. device according to claim 12 is characterized in that, described embossed surface comprises a plurality of protuberances, and each described protuberance has the extended and mutual angled surface of a plurality of dark space shields from described ground connection.
14. device according to claim 13 is characterized in that, the surface-area of described protuberance is about 25mm
2
15. device according to claim 11 is characterized in that, the dark space shield of described ground connection removably is connected with described one or more beams.
16. device according to claim 11 is characterized in that, the dark space shield of described ground connection comprises one or more grooves that are used for being provided with therein described one or more cooling channels.
17. device according to claim 11 is characterized in that, described one or more beams comprise one or more grooves that are used for being provided with therein described one or more cooling channels.
18. a sputtering method comprises:
Connect sputtering target between one or more gripping units and support beam flange, described beam is connected with the dark space shield of ground connection;
Dark space shield and the described beam of pressing close to described ground connection are provided with the cooling channel;
Cooling fluid is flowed in described cooling channel; And
From described sputtering target sputter material on substrate.
19. method according to claim 18 is characterized in that, also comprises:
Described flange and described sputtering target are electrically insulated.
20. method according to claim 18, it is characterized in that the dark space shield of described ground connection comprises the surface of embossing, the surface of described embossing has a plurality of protuberances, each described protuberance has the extended surface of a plurality of dark space shields from described ground connection, and described sputtering method also comprises:
Expand and shrink described a plurality of protuberance.
21. method according to claim 18 is characterized in that, the surface area of described substrate is 1 square metre or bigger.
22. method according to claim 18 is characterized in that, described cooling channel is arranged on the inside of described beam.
23. method according to claim 18 is characterized in that, described cooling channel contacts with the dark space shield of described ground connection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82002306P | 2006-07-21 | 2006-07-21 | |
| US60/820,023 | 2006-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101109069A CN101109069A (en) | 2008-01-23 |
| CN101109069B true CN101109069B (en) | 2010-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101232896A Expired - Fee Related CN101109069B (en) | 2006-07-21 | 2007-07-23 | Cooled dark space shield for multi-cathode design |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5265149B2 (en) |
| KR (1) | KR100954248B1 (en) |
| CN (1) | CN101109069B (en) |
| TW (1) | TWI362427B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782182B (en) | 2010-03-01 | 2015-09-09 | 株式会社爱发科 | Sputter equipment |
| JP5583794B2 (en) * | 2011-02-08 | 2014-09-03 | Ｊｘ日鉱日石金属株式会社 | Sputtering target assembly |
| JP5869560B2 (en) * | 2011-04-26 | 2016-02-24 | 株式会社アルバック | Cathode unit |
| CN102978577A (en) * | 2011-09-06 | 2013-03-20 | 鸿富锦精密工业（深圳）有限公司 | Intermediate-frequency magnetron sputtering coating device |
| KR102446178B1 (en) * | 2015-12-09 | 2022-09-22 | 삼성디스플레이 주식회사 | Sputtering Apparatus |
| CN111041434B (en) * | 2020-03-17 | 2020-06-19 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for depositing insulating film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026533A1 (en) * | 1995-02-24 | 1996-08-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reactive sputtering device |
| WO2001006030A1 (en) * | 1999-07-19 | 2001-01-25 | Young Park | High throughput thin film deposition for optical disk processing |
| CN1329678A (en) * | 1998-10-30 | 2002-01-02 | 应用材料有限公司 | Sputtering apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE47504T1 (en) | 1983-12-05 | 1989-11-15 | Leybold Ag | MAGNETRON CATODE FOR ATOMY FERROMAGNETIC TARGETS. |
| JPS62222059A (en) * | 1986-02-28 | 1987-09-30 | Fujitsu Ltd | Method for sputtering |
| JPH03243761A (en) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | Sputtering device |
| US5441614A (en) | 1994-11-30 | 1995-08-15 | At&T Corp. | Method and apparatus for planar magnetron sputtering |
| JPH11229131A (en) * | 1998-02-17 | 1999-08-24 | Nikon Corp | Sputtering device for film formation |
| US8775443B2 (en) * | 2003-08-07 | 2014-07-08 | Sap Ag | Ranking of business objects for search engines |
-
2007
- 2007-07-20 JP JP2007189049A patent/JP5265149B2/en active Active
- 2007-07-23 KR KR1020070073724A patent/KR100954248B1/en active IP Right Grant
- 2007-07-23 TW TW096126834A patent/TWI362427B/en active
- 2007-07-23 CN CN2007101232896A patent/CN101109069B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026533A1 (en) * | 1995-02-24 | 1996-08-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reactive sputtering device |
| CN1329678A (en) * | 1998-10-30 | 2002-01-02 | 应用材料有限公司 | Sputtering apparatus |
| WO2001006030A1 (en) * | 1999-07-19 | 2001-01-25 | Young Park | High throughput thin film deposition for optical disk processing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200823308A (en) | 2008-06-01 |
| JP2008025031A (en) | 2008-02-07 |
| KR100954248B1 (en) | 2010-04-23 |
| KR20080009031A (en) | 2008-01-24 |
| JP5265149B2 (en) | 2013-08-14 |
| CN101109069A (en) | 2008-01-23 |
| TWI362427B (en) | 2012-04-21 |
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