CN101109069A - Cooled dark space shield for multi-cathode design - Google Patents

Cooled dark space shield for multi-cathode design Download PDF

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CN101109069A
CN101109069A CN 200710123289 CN200710123289A CN101109069A CN 101109069 A CN101109069 A CN 101109069A CN 200710123289 CN200710123289 CN 200710123289 CN 200710123289 A CN200710123289 A CN 200710123289A CN 101109069 A CN101109069 A CN 101109069A
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shroud
plurality
dark
beams
assembly
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CN101109069B (en
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稻川真
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应用材料股份有限公司
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Abstract

本发明公开了一种用于多阴极、大面积的PVD装置的冷却式暗区护罩。 The present invention discloses a multi-cathode, cooled PVD apparatus shroud large dark area. 对于多阴极系统,在相邻的阴极/靶之间的暗区护罩是非常有益的。 For multi-cathode system, the dark areas between adjacent shroud cathode / target is very useful. 护罩可以接地并为在溅射等离子体中出现的电子提供接地的路径。 A ground shield may provide a path to ground and an electron occurring in the sputtering plasma. 由于护罩位于相邻的靶之间,接地的护罩作为阳极可以有助于在处理空间内形成均匀的等离子体。 Since the shroud is located between adjacent targets, an anode grounded shield may help form a uniform plasma in the processing space. 由于腔室内的温度在处理温度和停机温度之间波动,护罩会膨胀和收缩。 Since the temperature fluctuation of the chamber between the processing temperature and the shutdown temperature, the shroud will expand and contract. 对护罩进行冷却减小了发生膨胀和收缩的可能性,从而降低了可能发生的剥落的数量。 Cooling shroud to reduce the possibility of expansion and contraction, thereby reducing the amount of flaking may occur. 对护罩的表面进行压花可以减少沉积到护罩上的材料数量并控制护罩的膨胀和收缩。 Embossing the surface of the shroud can reduce the amount of material to be deposited on the shroud and controls expansion and contraction of the shroud.

Description

用于多阴极设计的冷却式暗区护罩 Designed for multi-cathode-cooled shroud dark area

技术领域 FIELD

本发明的实施例大体上涉及具有设置在相邻溅射靶之间的冷却式暗区护 Embodiments of the invention generally relates to a cooled dark regions disposed between adjacent guard sputtering target

罩的物理气相沉积(PVD)系统。 Physical vapor deposition mask (PVD) system. 背景技术 Background technique

利用磁电管的PVD是一种在基板上沉积材料的方法。 Using magnetron PVD is a method for depositing a material on a substrate. 在PVD处理中,可以对耙进行电性偏压,使得处理区中产生的离子可以以足够的能量轰击耙表面以把原子从靶中撞出。 In the PVD process, it may be electrically biased to the rake, so that the plasma can be generated in the treatment zone with sufficient energy to bombard the surface of the rake dislodge atoms from the target. 使靶偏压导致产生等离子体、导致离子轰击靶表面并从靶表面移走原子的处理通常被称为溅射。 Resulting in the target bias voltage to generate a plasma, ion bombardment process result in removal of atoms from the target surface and the target surface is commonly called sputtering. 溅射出的原子一般向待溅射涂覆的基板行进,并且该溅射出的原子被沉积在基板上。 Usually sputtered atoms to be sputtered coated substrate travels, and the sputtered atoms are deposited on the substrate. 可选地,原子与等离子体中的气体如氮气反应,以反应性地在基板上沉积化合物。 Alternatively, the atoms in the plasma reaction gas such as nitrogen to the reactive compound deposited on the substrate. 反应性沉积经常用于在基板上形成氮化钛或氮化钽的薄的阻挡层或晶核层。 The reaction is often used for deposition of a thin barrier or nucleation layers of titanium nitride or tantalum nitride is formed on the substrate.

直流(DC)溅射和交流(AC)溅射为溅射的形式,其中,靶被偏压以向靶吸引离子。 Direct current (DC) sputtering, and alternating current (AC) sputtering a sputtering form, wherein the target is biased to attract ions to the target. 靶可以被偏压成介于-100V至-600V之间的负偏压,以向靶吸引工作气体(例如氩气)的正离子,以溅射原子。 The target may be biased to a negative bias interposed between -100V to -600 V, to attract the working gas (e.g., argon) positive ions to a target to sputter atoms. 通常,溅射腔的侧面覆盖有护罩以保护腔室壁不被溅射沉积。 Typically, the sputtering chamber side is covered with a shield to protect the chamber walls being sputter deposited. 护罩可以电性接地从而提供与靶阴极相反的阳极,以电容性地连接靶电源和溅射腔中产生的等离子体。 Electrically grounded shield may thereby providing a cathode opposite to the anode target, capacitively coupled plasma sputtering chamber and the target power generated.

溅射过程中,材料被溅射并沉积到腔室内的暴露的表面上。 A sputtering process, material is sputtered and deposited onto the exposed surface of the chamber. 沉积到腔室的暴露表面上的材料可能会剥落并污染基板。 Depositing material on the surface exposed to the chamber may flake off and contaminate the substrate. 因此,现有技术需要减少对基板的污染。 Thus, the prior art need to reduce the contamination of the substrate.

发明内容 SUMMARY

本发明公开了一种用于多阴极、大面积的PVD装置的冷却式暗区护罩。 The present invention discloses a multi-cathode, cooled PVD apparatus shroud large dark area. 对于多阴极系统,在相邻的阴极/靶之间的暗区护罩是非常有益的。 For multi-cathode system, the dark areas between adjacent shroud cathode / target is very useful. 护罩可以接地并为在溅射等离子体中出现的电子提供接地的路径。 A ground shield may provide a path to ground and an electron occurring in the sputtering plasma. 由于护罩位于相邻的耙之间,接地的护罩作为阳极可以有助于在处理空间内形成均匀的等离子体。 Since the shroud is located between adjacent rake, a grounded anode shield may help form a uniform plasma in the processing space.

由于腔室内的温度在处理温度和停机温度之间波动,护罩会膨胀和收縮。 Since the temperature fluctuation of the chamber between the processing temperature and the shutdown temperature, the shroud will expand and contract. 对护罩进斤冷却减小了发生膨胀和收缩的可能性,从而降低了可能发生的剥落的数量。 Cooling shroud pounds of feed reduces the possibility of expansion and contraction, thereby reducing the amount of flaking may occur. 对护罩的表面进行压花可以减少沉积到护罩上的材料数量并控制护罩的膨胀和收縮。 Embossing the surface of the shroud can reduce the amount of material to be deposited on the shroud and controls expansion and contraction of the shroud.

在一个实施例中,公开了一种溅射靶支撑框架组件。 In one embodiment, there is disclosed a sputtering target support frame assembly. 所述组件包括:围绕多个靶设置的边缘部; 一个或多个梁,在相邻的靶之间跨越一个长度,所述一个或多个梁与所述边缘部相连接; 一个或多个暗区护罩,与所述一个或多个梁相连接;以及, 一个或多个冷却通道,与所述一个或多个梁相连接。 Said assembly comprising: a plurality of target portions arranged around the edge of; one or more beams, between adjacent targets across a length of the one or more beams connecting said edge portion; one or more dark area shield is connected to the one or more beams phases; and one or more cooling channels, the one or more beams are connected.

在另一个实施例中,公开了一种溅射装置。 In another embodiment, a sputtering apparatus is disclosed. 所述溅射装置包括:多个溅射靶以及连接在多个溅射靶中的一对溅射耙之间的溅射耙支撑框架。 The sputtering apparatus comprising: a sputtering target frame among the plurality of supporting a sputtering target and a pair of connecting a plurality of sputtering target in the sputtering target. 所述溅射耙支撑框架包括: 一个或多个梁,具有用于支撑所述一对溅射耙的凸缘; 一个或多个冷却通道,与所述一个或多个梁相连接;以及一个或多个夹紧装置,与所述一个或多个梁相连接,使得所述一对溅射耙连接在所述一个或多个夹紧装置与所述凸缘之间。 The sputtering target supporting frame comprising: one or a plurality of beams having a flange for supporting the pair of the sputtering target; one or more cooling channels connected with the one or more beams; and a or a plurality of clamping devices, with the one or more beams are connected, so that the pair of connection between the sputtering target or a plurality of clamping means and said flange.

在又一个实施例中,公开了一种压花暗区护罩。 In yet another embodiment, there is disclosed a shield embossed dark areas. 所述护罩包括:护罩主体, 具有至少一个弯曲表面;以及,多个从护罩主体上延伸出的突出部。 Said shield comprising: a shield body having at least one curved surface; and, a plurality of projecting portions extending from the shroud body.

在另一个实施例中,公开了一种溅射方法。 In another embodiment, there is disclosed a sputtering method. 所述方法包括:在一个或多个夹紧装置与支撑梁的凸缘之间连接一溅射耙,所述梁与暗区护罩相连接;贴近所述暗区护罩和所述梁设置冷却通道;使冷却流体在冷却通道内流动;以及, 从溅射靶向基板上溅射材料。 Said method comprising: a sputtering target connected between one or more clamping means to the support beam flange, the beam is connected to the shroud and dark areas; dark region proximate the shroud and the beam arrangement cooling channels; cooling fluid flowing in the cooling channel; and, sputtered from the sputtering material on the substrate targeting.

附图说明 BRIEF DESCRIPTION

为了更详细地理解本发明的上述特征,下面结合实施例对上面概要描述过的本发明进行更加具体地说明,部分实施例在附图中示出。 In order to understand the above-described features of the present invention in more detail below in conjunction with embodiments of the present invention described above summary will be described more specifically, some embodiments shown in the accompanying drawings. 但是应当注意,附图示出的仅仅是本发明的典型实施例,因此并不能作为对本发明的范围的限定,本发明还包括其它的等效实施例。 It should be noted that the drawings shown embodiments are merely exemplary of the present invention, and therefore not as a definition of the scope of the present invention, the present invention also includes other equally effective embodiments.

图1为本发明的一个实施例的PVD装置100的横截面图; A PVD device of the embodiment of FIG. 1 is a cross sectional view of the present invention, 100;

图2为本发明的一个实施例的溅射耙组件200的仰视图; A sputtering target assembly according to the present embodiment of the invention FIG. 2 is a bottom view 200;

图3为本发明的一个实施例的框架组件300的立体示意图; Perspective view of a frame assembly 300 of FIG. 3 embodiment of the present invention;

图4为本发明的一个实施例的设置在相邻的耙组件之间的梁组件的横截 A cross beam assembly of the embodiment is provided between adjacent rake assembly embodiment of FIG. 4 of the present invention.

面图; FIG surface;

图5为本发明的另-个实施例的设置在相邻的靶组件之间的杆组件的横 Cross between adjacent target assemblies disposed a rod assembly embodiment - also Figure 5 of the present invention.

截面图; Sectional view;

图6为本发明的一个实施例的暗区护罩600的立体示意图; 图7A为本发明的一个实施例的形成在暗区护罩压花表面中的突出部700 的俯视图; Perspective view of the dark region 600 of one embodiment of the present invention the shroud of FIG. 6; FIG. 7A a top view of the embodiment of FIG embodiment is formed in a dark area in the shroud embossed surface of the projecting portion 700 of the present invention;

图7B为图7A中的突出部700的横截面图。 FIG 7B is a cross-sectional view of the protruding portion 700 in FIG. 7A.

为了利于理解,在可能的情况下,图中共同的相同元件用相同的附图标记表示。 To facilitate understanding, where possible, the same elements common to the figures represented by the same reference numerals. 应当理解,在一个实施例中公开的元件可以在不具体说明的情况下有利地应用于其它的实施例中。 It should be appreciated that, in one embodiment of the element disclosed embodiments may be advantageously applied to other embodiments without specific description.

具体实施方式 Detailed ways

本发明公开了一种用于多阴极、大面积的PVD装置的冷却式暗区护罩。 The present invention discloses a multi-cathode, cooled PVD apparatus shroud large dark area. 对于多阴极系统,在相邻的阴极/靶之间的暗区护罩是非常有益的。 For multi-cathode system, the dark areas between adjacent shroud cathode / target is very useful. 护罩可以接地并为在溅射等离子体中出现的电子提供接地的路径。 A ground shield may provide a path to ground and an electron occurring in the sputtering plasma. 由于护罩位于相邻的耙之间,接地的护罩作为阳极可以有助于在处理空间内形成均匀的等离子体。 Since the shroud is located between adjacent rake, a grounded anode shield may help form a uniform plasma in the processing space. 由于腔室内的温度在处理温度和停机温度之间波动,护罩会膨胀和收縮。 Since the temperature fluctuation of the chamber between the processing temperature and the shutdown temperature, the shroud will expand and contract. 对护罩进行冷却减小了发生膨胀和收縮的可能性,从而降低了可能发生的剥落的数量。 Cooling shroud to reduce the possibility of expansion and contraction, thereby reducing the amount of flaking may occur. 对护罩的表面进行压花可以减少沉积到护罩上的材料数量并控制护罩的膨胀和收縮。 Embossing the surface of the shroud can reduce the amount of material to be deposited on the shroud and controls expansion and contraction of the shroud.

本发明被解释性地叙述,并可以应用于处理大面积基板的PVD系统中, 如Applied Materials, Inc., Santa Clara, California的子公司AKT⑧所生产的PVD 系统。 The present invention has been described in an explanatory, and PVD processing system may be applied to a large area substrate, such as a PVD system, Applied Materials, Inc., Santa Clara, California, a subsidiary of AKT⑧ produced. 但是应当理解,溅射靶也可以应用到其它的系统配置中,包括那些配置成处理大面积圆形基板的系统。 It should be understood that the sputtering target may be applied to other system configurations, including those systems configured to process large area round substrates. 2005年9月13日递交的美国专利申请No. 11/225,922说明了一种可以应用本发明的示例性系统,这里引入其全部内容作为参考。 September 13, 2005 filed U.S. Patent Application No. 11 / 225,922 describes an exemplary system of the present invention may be applied, incorporated herein by reference in its entirety.

随着对更大的平板显示装置的需求增加,基板的尺寸必须随之增加。 As the demand for greater device a flat panel display, size of the substrate must be increased. 随着基板尺寸的增加,溅射靶的尺寸也必须随之增加。 As substrate sizes increase, the size of the sputtering target must also be increased. 对平板显示装置和太阳电池板来说,长度大于1米的溅射靶是很平常的。 Flat panel display devices and solar panels, the sputtering target of length greater than 1 m is not unusual. 利用金属锭生产大尺寸的单体溅射靶是非常困难和昂贵的。 Using a large-sized ingot production monomer sputter target is very difficult and expensive. 例如,很难获得大的钼板(即,1.8mx2.2mxl0mm, For example, it is difficult to obtain a large molybdenum plate (i.e., 1.8mx2.2mxl0mm,

2.5mx2.8mxl0mm等)而且花费相当高昂。 2.5mx2.8mxl0mm, etc.) and the cost is quite high. 生产大面积的钼耙需要大量的资金投入。 Producing a large area of ​​molybdenum rake requires a lot of capital investment. 生产一片大面积(即1.8mx2.2mxl0mm)的单体钼靶可能需要花费$15,000,000。 The production of a large area (ie 1.8mx2.2mxl0mm) monomer mammography may need to spend $ 15,000,000. 因此,仅仅从成本上考虑,利用多个较小的靶而实现大面积溅射靶的沉积均匀性是非常有益的。 Therefore, only from the viewpoint of cost, to achieve a uniform deposition of large area sputter target is very useful with a plurality of small target. 多个耙可以具有相同或者不同的成分。 Multiple fingers may have the same or different compositions.

基板和腔室尺寸的增加带来了各种挑战,这些挑战之一就是均匀的沉积。 Increasing the size of the chamber and the substrate brings challenges, one of these challenges is the uniform deposition. 溅射等离子体中的电子被吸附到装置中接地的元件。 Sputtering electrons in the plasma are attracted to the device ground element. 通常,腔室壁以及基座或基板支撑体被接地,从而起阳极作用,与之相反,溅射靶起阴极作用。 Typically, the chamber wall and the susceptor or substrate support member is grounded such that functions as an anode, in contrast, the sputtering target functions as a cathode.

起阳极作用的接地的腔室壁从等离子体中吸引电子,因此,会易于在腔室壁附近形成高密度的等离子体。 Functions as an anode grounded chamber wall to attract electrons from the plasma, therefore, may be easily formed in the vicinity of a high density plasma chamber wall. 腔室壁附近的高密度等离子体可以增加腔室壁附近的基板上的沉积并减少远离腔室壁的基板上的沉积。 High density plasma near the chamber wall can increase the deposition on the substrate near the chamber wall and reduce deposition on the chamber wall remote from the substrate. 另一方面,接地的基座也起阳极的作用。 On the other hand, the base also as a grounded anode. 基座可以跨越处理空间的大部分长度。 The base may span most of the length of the treatment space. 从而,基座不仅可以为基座边缘处的电子提供接地路径,而且也可以为基座中部的电子提供接地路径。 Accordingly, the base can not only provide a ground path for the electrons at the edges of the susceptor, but may also be an electronic central base to provide a ground path. 由于每个阳极,不管是腔室壁还是基座,都作为阳极起相同的作用并横跨处理空间均匀地散播等离子体,位于基座中部的接地路径平衡了位于基座边缘和腔室壁的接地路径相互抵消。 Since each anode or chamber wall of the base either, they have the same function as the anode and spread uniformly across the plasma processing space, located in the middle of the base located on the ground path of the base edge and the equilibrium chamber wall ground path cancel each other out. 通过使等离子体在处理空间内均匀地分布, 可以实现横跨基板的均匀的沉积。 By uniformly distributed in the plasma processing space, uniform deposition across the substrate can be achieved.

当基板为绝缘基板时(如玻璃或者聚合体),基板不导电,从而电子无法穿过基板。 When the substrate is an insulating substrate (e.g., glass or polymer), non-conductive substrate, so that electrons can not pass through the substrate. 其结果是,当基板基本上覆盖基板支撑体时,基座支撑体不能提供足够的阳极表面。 As a result, when the substrate substantially covers the substrate support member, the support base may not provide sufficient anode surface.

对大面积基板,如太阳电池板或用于平板显示装置的基板,阻断穿过基座的接地路径的基板尺寸可以是非常大的。 Large area substrate, such as a solar panel or a substrate for a flat panel display device, blocking the path to ground through the base of the substrate size can be very large. 在平板显示行业中,尺寸为lmxlm 的基板是很常见的。 In the flat panel display industry, the size of the substrate is common lmxlm. 对lmxlm的基板,穿过基座的接地路径被阻断了1平方米的面积。 Lmxlm substrate, the ground path through the base 1 is blocked square meters. 因此,没有被基板覆盖的腔室壁和基座的边缘是等离子体中的电子的唯一接地路径。 Thus, the edge of the substrate not covered by the chamber wall and the base is the only path to ground electrons in the plasma. 在基板的中心附近不存在接地路径。 Ground path does not exist in the vicinity of the center of the substrate. 对大面积基板,会在没有被基板覆盖的腔室壁和基座的边缘附近形成高密度的等离子体。 Large area substrate, a high-density plasma formed in the vicinity of the edge is not covered by the chamber wall and the base substrate. 腔室壁和基座边缘附近的高密度等离子体会使不存在接地路径的处理区中心附近的等离子体变稀薄。 The plasma processing region near the center of the chamber wall and the high-density plasma near the edge of the base path to ground does not exist will thinning. 在处理区中心附近没有接地路径的情况下,可能使等离子体不均匀,并因此在大面积基板上的沉积也可能是不均匀的。 In the absence of a ground path in the vicinity of the center of the processing region, the plasma may be uneven, and thus deposited on large area substrates may also be non-uniform.

为了帮助确保得到均匀的等离子体,可以在腔室内设置除了基座和腔室壁之外的阳极。 To help ensure uniform plasma can be in addition to the base and chamber wall anode disposed within the chamber. 对于使用多个溅射靶带/板的多阴极系统,阳极可以设置在相邻 For systems using a plurality of multi-cathode with sputter target / plate, the anode may be provided adjacent

的溅射靶带/板之间。 With a sputtering target / plate between.

图1为本发明的一个实施例的PVD装置100的横截面图。 FIG PVD apparatus 1 a cross-sectional view of the embodiment of the present invention 100. 装置100包括被支撑在基座102上的基板104,其中所述基座102被包容在装置100的腔室璧116中。 Apparatus 100 includes a base 102 supported on a substrate 104, wherein the base 102 is contained in a chamber 100 in the apparatus 116 Bi. 腔室璧116接地。 Bi chamber 116 is grounded. 基板104与多个溅射靶106a〜106f相对设置。 And a plurality of substrate 104 disposed opposite the sputtering target 106a~106f. 在基板104和靶106a〜106f之间为处理区112。 Between the substrate 104 and the target treatment zone 112 is 106a~106f. 腔室壁116由护罩114保护以不 Chamber wall 116 by a shield 114 is not protected

被沉积。 It is deposited.

在一个实施例中,每个溅射靶106a〜106f具有相应的背衬板108a〜108f。 In one embodiment, each of the sputter target has a corresponding backing plate 106a~106f 108a~108f. 在另一个实施例中,各溅射靶106a〜106f可以与一个单一的公共背衬板连接。 In another embodiment, each sputtering target 106a~106f may be connected to a single common backing plate. 虽然将结合前面的实施例对本发明进行说明,应当理解,该说明同样可以应用于单一的公共背衬板的实施例。 Although the foregoing embodiments in conjunction with embodiments of the present invention will be described, it should be understood that this description is equally applicable to the embodiment of the single common backing plate.

在背衬板108a〜108f内设置有冷却通道。 Provided with a cooling passage within the backing plate 108a~108f. 冷却流体流过冷却通道,以控制背衬板108a〜108f的温度,并由此控制溅射靶106a〜106f的温度。 Cooling fluid through the cooling channel, to control the temperature of the backing plate 108a~108f, and thereby control the temperature of the sputtering target 106a~106f. 冷却流体可以是现有技术中己知的任意的常规冷却流体。 The cooling fluid may be any conventional cooling fluid known in the prior art. 在一个实施例中,冷却流体为水。 In one embodiment, the cooling fluid is water. 在另一个实施例中,冷却流体为气态。 In another embodiment, the cooling fluid is gaseous.

在位于背衬板108a〜108f后面的磁电管腔120内设置有磁电管118。 In the magnetic lumen 120 is located behind the backing plate is provided with a 108a~108f magnetron 118. 磁电管118可以是固定的磁电管组件或者可移动的磁电管组件。 The magnetron 118 may be fixed or magnetron assembly magnetron assembly movable. 在一个实施例中, 磁电管118为多个磁电管组件,其中,磁电管118的数量对应于靶106a〜106f 的数量。 In one embodiment, the magnetron 118 is a plurality of magnetron assembly, wherein the number of magnetrons 118 corresponds to the number of target 106a~106f. 当磁电管118的数量对应于耙106a〜106f的数量时,可以控制和调整穿过每个单独的靶的磁场。 When the number of the magnetron 118 by the number corresponding to the rake 106a~106f, the magnetic field can be controlled and adjusted through each individual target.

靶106a〜106f可以通过粘结层122粘结到背衬板108a〜108f上。 106a~106f may be bonded to the target backing plate 122 by an adhesive layer 108a~108f. 粘结层122 可以是现有技术中任意的通常已知的粘结材料。 The adhesive layer 122 may be any of the prior art generally known in the adhesive material. 在2005年9月12日递交的美国专利申请No. 11/224,221中公开了一种可以用于将靶106a〜106f粘结到背衬板108a〜108f上的示例性粘合材料,在此引入其全部内容作为参考。 Discloses a method can be used to target 106a~106f exemplary adhesive material adhered to the backing plate in 108a~108f September 12, 2005 filed U.S. Patent Application No. 11 / 224,221, incorporated herein its entirety by reference.

溅射耙106a〜106f可以设置在框架组件上。 106a~106f sputtering target may be disposed on the frame assembly. 框架组件可以具有一个或者多个跨越处理空间112的梁124a〜124e。 The frame assembly may have one or a plurality of beams across the processing space 112 124a~124e. 框架组件还可以具有与所述框架组件相连接的凸缘(ledge) 134。 The frame assembly may also have a flange (ledge) 134 and is connected to the frame assembly. 溅射靶106a〜106f可以设置在所述凸缘134和梁124a〜124e上,使得所述溅射靶106a〜106f被支撑在所述凸缘134和梁124a〜124e上。 106a~106f sputtering target may be disposed on the flange 134 and the beam 124a~124e, so that the sputter target 106a~106f is supported on the flange 134 and the beam 124a~124e. 溅射耙106a〜106f可以通过电绝缘体140与梁124a〜124e绝缘。 106a~106f sputtering target may be insulated by an electrical insulator 140 124a~124e beam.

每个靶106a〜106f可以与相应的电源128a〜128f相连接,使得各耙106a~ 106f可以被独立地供电。 Each target 106a~106f may be connected with corresponding power 128a~128f, so that each rake 106a ~ 106f may be independently powered. 通过为各靶106a〜106f提供分开的电源128a〜128f, By providing a separate power supply for the target 128a~128f 106a~106f,

9 9

可以单独地控制每个溅射靶106a〜106f的功率级别,以实现均匀沉积。 You can be individually controlled power level of each sputtering target 106a~106f to achieve uniform deposition. 电源128a〜128f可以使直流、交流、脉冲、射频或者它们的结合。 128a~128f can supply DC, AC, pulse, a radio frequency or combination thereof. 所述装置可以由控制器132控制。 The device may be controlled by the controller 132. 2006年6月30日递交的美国专利申请No. 11/428,226公开了一种示例性的电源配置,在此引入其全部内容作为参考。 2006 June 30 filed US Patent Application No. 11 / 428,226 discloses an exemplary power configuration, which is incorporated herein by reference in its entirety.

构成框架组件的梁124a〜124e和凸缘134可以接地,使得框架组件起阳极的作用。 124a~124e beam constituting the frame assembly and the flange 134 may be grounded, so that the frame assembly from the anode effect. 在一个实施例中,包括梁124a〜124e和凸缘134的框架组件可以由一体结构构成。 In one embodiment, the frame assembly comprises a beam 124a~124e flange 134 and may be formed as an integral structure. 每个梁124a〜124e具有相应的与之连接的暗区护罩126a〜126e。 Each beam has a dark area corresponding 124a~124e shroud connected thereto 126a~126e. 暗区护罩126a〜126e保护梁124a〜124e免受不必要的沉积,并可以电连接到梁124a〜124e,使得暗区护罩126a〜126e起到阳极的作用。 Protective shield 126a~126e dark area from unnecessary 124a~124e beam deposition, and may be electrically connected to the beam 124a~124e, so that the dark areas of anode shield 126a~126e functions. 在一个实施例中,暗区护罩126a〜126e可以由与溅射靶相同的材料制成。 In one embodiment, dark regions 126a~126e shield may be made of the same material as the sputtering target. 在另一个实施例中,暗区护罩126a〜126e可以由不锈钢经过喷丸处理(bead blasted)并被火焰喷涂(flame sprayed)上铝或者与溅射靶相同的材料而制成。 Embodiment, shield 126a~126e dark regions may be subjected to shot peening (bead blasted) and flame spraying (flame sprayed) on aluminum or stainless steel sputtering target made of the same material in another embodiment.

暗区护罩126a〜126e可以暴露于处理区112,从而会经受在处理和停机之间的显著变化的温度。 126a~126e shield dark regions can be exposed to the processing region 112, which will be subjected to significant temperature variations between processing and downtime. 为了补偿温度的波动,暗区护罩126a〜126e可以通过在冷却通道138内流动的冷却流体而被冷却。 To compensate for temperature fluctuations in the dark areas 126a~126e shroud may be cooled by a cooling fluid flowing in the cooling passage 138. 暗区护罩126a〜126e可以可拆卸地与梁124a〜124e连接。 Dark regions 126a~126e shield can be detachably connected to the beam 124a~124e.

图2为本发明的一个实施例的溅射靶组件200的仰视图。 A bottom view of sputter target assembly 200 according to Embodiment 2 of the present invention. FIG. 多个溅射耙204a 〜204f可以横跨溅射靶组件200间隔设置并被设置在框架组件202中。 A plurality of sputtering target 204a ~204f intervals may span sputter target assembly 200 and frame assembly 202 is provided. 框架组件202可以包括一个或多个梁206。 The frame assembly 202 may include one or more beams 206. 在一个实施例中,框架组件202由整片材料构成。 In one embodiment, the entire frame assembly 202 is made of sheet material. 应当理解,虽然示出了六个溅射靶204a〜204f,但也可以使用更多或者更少的溅射靶204a〜204f。 It should be appreciated that, although a six sputter target 204a~204f, but more or fewer may be used sputtering target 204a~204f. 此外,虽然示出的溅射靶204a〜204f为溅射耙带, 本发明也可以利用其它的配置。 In addition, while the sputtering target is shown 204a~204f sputtering target band, the present invention may utilize other configurations. 例如,可以使用溅射耙砖和将溅射靶砖连接到一起构成的溅射靶带。 For example, a sputtering target tiles and the tiles are connected to the sputtering target with a sputtering target composed together. 在2006年6月15日递交的美国专利申请No. 11/424,467 和2006年6月15日递交的美国专利申请No. 11/424,478中描述了被连接到一起以构成溅射靶带的示例性的溅射靶砖,这里引入这两个专利申请的全部内容作为参考。 In the June 15, 2006 filed U.S. Patent Application No. 11 / 424,467 and 15 June 2006 filed U.S. Patent Application No. 11 / 424,478 describes exemplary are connected together to constitute a sputtering target band of sputtering target tiles, contents of which are herein incorporated by reference patent applications.

图3为本发明的一个实施例的框架组件300的立体示意图。 A perspective view of frame assembly 300 according to Embodiment 3 of the present invention. FIG. 框架组件300 可以包括一个或者多个在外部框架部分302之间延伸的梁304。 Frame assembly 300 may include one or more beams 304 between the outer frame portion 302 extends. 溅射耙组件306 可以放置在在框架组件300内的开口308内,在设置在梁304和外部框体部分302上的凸缘310之上。 Sputtering target assembly 306 may be placed within the opening 308 in the frame assembly 300, the flanges 310 disposed on the upper beam 304 and an outer housing portion 302. 图4为本发明的一个实施例的设置在相邻的靶组件之间的梁组件的横截 A cross beam assembly of the embodiment is provided between adjacent target assembly embodiment of the present invention. FIG. 4

面图。 FIG surface. 每个靶组件包括利用粘结层406a、 406b粘结到背衬板404a、 404b上的溅射靶402a、 402b。 Each target assembly using a tie layer comprising 406a, 406b bonded to a backing plate 404a, the sputter target 404b 402a, 402b. 背衬板404a、 404b的温度可以通过一个或多个可以设置在背衬板404a、 404b中的冷却通道408来控制。 Backing plate 404a, 404b may be provided temperature by one or more backing plate 404a, 404b in the cooling passage 408 is controlled. 背衬板涂层410设置在背衬板404a、 404b的背侧,以利于磁电管(图中未示出)跨越背衬板404a、 404b 背面的移动,并使磁电管绝缘。 The backing plate 410 is provided in backing plate coating 404a, 404b of the back side, to facilitate the magnetron (not shown) across the backing plate 404a, 404b move back surface, and insulated magnetron.

梁组件412可以包括与暗区护罩414相连接的梁主体426。 Beam assembly 412 may include a body 414 connected to the beam 426 and dark areas shroud. 夹具428可以穿过所述梁主体426设置。 Clamp 428 may pass through the beam body 426 is provided. 连接装置430可以把夹具428固定到梁主体426 上,从而把溅射靶组件固定到夹具428和梁主体426的凸缘432之间。 The connecting means 430 may clamp beam 428 fixed to the main body 426, thereby the sputter target assembly 432 is secured to the jig main body 428 and the flange 426 of the beam. 溅射耙组件可以通过电绝缘件424与梁主体426电绝缘。 Sputtering target assembly 424 may be electrically insulated from the beam body 426 by an electrically insulating member. 暗区护罩414可以通过现有技术中已知的任何常规的连接方式与所述梁组件412相连接。 Dark regions 414 can shield the beam assembly 412 is connected to the connector by any conventional manner known in the prior art. 类似地,绝缘件424也可以通过现有技术中已知的任何常规的连接方式与梁组件412连接。 Similarly, the insulating member 424 may be connected to the beam assembly 412 is connected by any conventional manner known in the prior art. 密封件416可以设置在暗区护罩414和梁主体426之间。 The seal 416 may be disposed between the shroud 414 and dark regions 426 beam body. 附加的密封元件418 可以设置在背衬板404a、 404b和梁组件412之间。 Additional sealing element 418 may be disposed between the backing plate 404a, 404b and beam assembly 412. 如上所述,梁组件412以及暗区护罩414可以被接地,从而有效地起阳极的作用。 As described above, the beam component 412 and a dark area 414 may be grounded shield, thereby effectively play the role of an anode.

多阴极PVD装置的独特设计使得阳极被放置在处理空间外部,同时仍有助于实现等离子体均匀性。 The unique design of multi-cathode PVD apparatus such that the anode is disposed outside the process space, while still contribute to plasma uniformity. 对于跨越公共背衬板间隔设置的多个溅射耙带(或者每个溅射靶其自己的背衬板),在相邻的溅射靶之间存在间隔。 For common across a plurality of sputtering target with the backing plate spaced (or each sputtering target of its own backing plate), there is a space between adjacent sputtering target. 溅射耙之间的间隔避免产生电弧。 The interval between the sputtering target to avoid arcing. 由于阳极有助于减小电弧,因此在相邻溅射耙之间的间隔中放置阳极会是有利的。 Since the anode helps reduce arcing, and therefore the spacing between the sputtering target may be advantageous to place the anode in the adjacent. 由于梁组件412不会阻断溅射耙402a、 402b和基板之间的任何视线路径(line of sight path),在溅射耙组件之间放置梁组件412 是有利的。 Since the beam assembly 412 does not block the sputtering target 402a, any line of sight path (line of sight path) between the substrate and 402b placed between the beam assembly sputtering target assembly 412 is advantageous. 通过把梁组件412邻近溅射靶402a、 402b放置,可以减小阳极对基板的任何遮蔽。 By the beam assembly 412 adjacent the sputtering target 402a, 402b are placed, any anode can be decreased to the substrate shield.

有必要使梁组件412超过溅射靶402a、 402b延伸到处理空间中。 Is necessary that the beam assembly 412 exceeds a sputtering target 402a, 402b extend into the treatment space. 由于材料从溅射靶402a、 402b向外溅射,材料可能会沿所有的方向行进。 Since the material from the sputtering target 402a, 402b outwardly sputtering material may travel along all directions. 从而,从溅射靶402a、 402b溅射出的材料可能会沉积在梁组件412上。 Accordingly, the sputtering target 402a, 402b sputtered material may be deposited on the beam assembly 412. 因此,暗区护罩414与所述梁组件412连接。 Accordingly, dark areas shroud assembly 414 is connected to the beam 412. 从溅射靶402a、 402b溅射出的任何材料会沉积在暗区护罩414上,而不是梁组件412上。 Any material sputtered from the sputtering target 402a, 402b will be deposited on the shroud in the dark areas 414, 412 instead of the beam assembly. 暗区护罩414可以被更换和/或清洗,从而梁组件412可以无限制地重复利用。 Dark regions shield 414 can be replaced and / or cleaned, so that beam assembly 412 can be reused indefinitely. 无论何时当需要更换和/或清洗暗区护罩414时,可以把暗区护罩414从梁组件412上分离。 Whenever require replacement and / or cleaning zone dark shroud 414, the shroud 414 can be separated from the dark areas on the beam assembly 412. 暗区护罩414 Dark areas cover 414

可以是成角度的,以减少可能沉积到暗区护罩414上的材料数量。 It may be angled to reduce the dark areas may be deposited amount of material on the shroud 414.

PVD装置400内的温度可以在处理温度和停机温度之间波动。 Temperature in the PVD apparatus 400 may fluctuate between the processing temperature and the shutdown temperature. 处理温度可以高到使腔室部件变成"红热"。 Processing temperature may be so high that the chamber member into a "red hot." 停机温度可以低到室内温度。 Shutdown temperature can be as low as room temperature. 随着温度的波动,暗区护罩414会膨胀和收縮。 As the temperature fluctuations, the dark areas shroud 414 will expand and contract. 当暗区护罩414膨胀和收縮时,沉积到暗区护罩414上的材料可能会剥落并污染基板。 When the dark region expansion and contraction of the shroud 414, the material is deposited on the dark areas of the shroud 414 may peel off and contaminate the substrate. 此外,处理温度可能会接近或超过溅射材料的熔点。 Further, the processing temperature may be close to or exceed the melting point of the sputtered material. 如果任何溅射材料落到暗区护罩414上并达到溅射材料的熔点,沉积的材料可能会从暗区护罩414上滴落并污染基板。 If any of the sputtered material 414 to fall on the shield and the dark region reaches the melting point of the sputtered material, the material may be deposited and contaminate the substrate on the drip shield 414 from the dark areas. 控制暗区护罩414的温度是非常有利的,因为这样可以减小暗区护罩414的膨胀和收縮。 Controlling the temperature of the shroud 414 of the dark region is highly advantageous because it can reduce the expansion and contraction of the shroud dark area 414. 此外,暗区护罩414的温度可以控制为保持低于溅射材料的熔点,从而减少任何滴到基板上的滴落物。 Further, the shroud 414 of the dark area may be controlled to maintain the temperature below the melting point of the sputtered material, thereby reducing dropped any drips on the substrate.

在梁主体426内设置有至少一个冷却通道420。 At least one cooling passage 420 in the beam main body 426 is provided. 从而冷却通道420可以贴近梁体426和暗区护罩414设置。 Thereby cooling passage 420 may close the beam shield 426 and dark regions 414 is provided. 冷却通道420可以是穿过梁组件412的梁主体426的连续通道,或者其也可以是多个冷却通道420。 Cooling channel 420 may be a beam through the beam assembly body 412 continuous channel 426, or it may be a plurality of cooling channels 420. 冷却通道420被密封元件422密封,以保证冷却流体不会进入到处理空间而污染基板。 Cooling channel 420 is a sealing member 422 sealed to keep the cooling fluid does not enter into the processing space to contaminate the substrate. 冷却流体可以是现有技术中已知的任何常规的冷却流体。 The cooling fluid may be any conventional cooling fluid known in the prior art. 在一个实施例中,冷却流体为水。 In one embodiment, the cooling fluid is water. 在另一个实施例中,冷却流体为气态的。 In another embodiment, the cooling gaseous fluid.

图5为本发明的另一个实施例的设置在相邻靶组件之间的梁组件的横截面图。 Cross-sectional view of the beam assembly disposed between adjacent target assembly embodiment of FIG. 5 another embodiment of the present invention. 冷却通道520可以设置在暗区护罩530的雕刻部(carved out portion) 内,并被冷却通道框架514包围。 Cooling passage 520 may be disposed in the dark areas of the shroud engraved portion 530 (carved out portion) within and surrounded by a cooling channel frame 514. 从而,冷却通道520贴近梁主体526。 Thus, the cooling passage 520 proximate the beam body 526.

图6为本发明的一个实施例的暗区护罩600的立体示意图。 Perspective view of a dark area 600 of FIG. 6 embodiment of the present invention the shroud. 在一个实施例中,暗区护罩600被压花,使得在其朝向PVD腔室内的处理空间的表面上出现一个或者多个突出部602、 604。 In one embodiment, the shroud 600 is embossed dark regions, such that one or more projecting portions appear 602, 604 on its surface facing the PVD process chamber space. 突出部602、 604可以是独立的大致为正方形的突出部602、伸长的矩形的突出部604、或者它们的结合。 Projecting portions 602, 604 may be separate substantially square protrusions 602, 604, or combinations thereof rectangular elongated projection. 暗区护罩600 上的突出部602、 604提供了在沉积过程中溅射材料可能会沉积的较小的表面。 Dark areas on the projection 600 of the shroud 602 604 provides a smaller surface during deposition of the sputtered material may be deposited. 但是,暗区护罩600的压花表面对暗区护罩600的任何可能的膨胀和收縮是有利的。 However, the dark area embossed surface shield region 600 of the shroud dark any possible expansion and contraction 600 is advantageous. 在温度的变化过程中,可以是突出部602、 604而不是整个暗区护罩600 膨胀和收縮。 During the change of temperature, it may be a protrusion portion 602, the dark region 604 rather than the entire shield 600 expands and contracts. 从而,突出部602、 604可以减少可能发生的剥落的数量。 Thus, the protruding portions 602, 604 may reduce the number of peeling may occur. 在一个实施例中,突出部602的表面积约为25平方毫米。 In one embodiment, the surface area of ​​the projecting portion 602 is about 25 square millimeters. 相对于通过如喷丸处理的处理方法简单地使表面变粗糙,压花由于提供了更大的表面积使得暗区护罩600在更换前能够沉积更多的材料,因此是非常有利的。 With respect to the shot peening treatment, such as by simply making method of surface roughening, embossing by providing more surface area so that the shield 600 can be a dark area more material is deposited before the replacement, and therefore is very advantageous. 压花可以使暗区护罩600持续使用的时间达到表面粗糙的暗区护罩的两倍左右。 Embossing can make the dark areas of the shroud 600 used duration to achieve a rough surface dark area about twice the shroud.

图7A为本发明的一个实施例的形成在暗区护罩压花表面上的突出部700 的俯视图。 FIG. 7A a top view of the embodiment of FIG embodiment is formed on a dark region of the shroud embossed surface of the projecting portion 700 of the present invention. 图7B为图7A中的突出部700的横截面。 FIG 7B is a cross-section of the projecting portion 700 in FIG. 7A. 突出部700可以具有倾斜表面702和大致平坦的顶表面704。 Protruding portion 700 may have an inclined surface 702 and a substantially flat top surface 704. 在一个实施例中,倾斜表面702的以大于约25度的角度倾斜。 In one embodiment, the inclined surface 25 at an angle greater than approximately 702 degrees of tilt.

在多阴极PVD系统中在相邻的靶之间设置起阳极作用的冷却式暗区护罩是很有利的,因为这样可以减少遮蔽并可以增加等离子体的均匀性。 In the multi-cathode PVD system disposed between adjacent target acting as an anode shield cooled dark area it is advantageous because it can reduce shadowing and can increase plasma uniformity. 对暗区护罩进行冷却和压花可以减少剥落或滴落,从而减少对基板的污染。 Shroud cooling the dark region can be reduced and the embossing dripping or flaking, thereby reducing contamination of the substrate.

虽然上面对本发明的一些实施例进行了说明,在不脱离本发明的基本范围的前提下,还可以设计出其它更多的实施例。 While the face of some embodiments of the present invention has been described, without departing from the basic scope of the present invention also may be devised more other embodiments. 本发明的范围由下述的权利要求限定。 Scope of the invention defined by the following claims.

Claims (28)

1、一种溅射靶支撑框架组件,包括: 围绕多个靶设置的边缘部; 一个或多个梁,在相邻的溅射靶之间跨越一个长度,所述一个或多个梁与所述边缘部相连接; 一个或多个暗区护罩,与所述一个或多个梁相连接;以及一个或多个冷却通道,与所述一个或多个梁相连接。 1. A sputtering target supporting frame assembly, comprising: a plurality of target portions arranged around the edge of; one or more beams, a span length between the sputter target adjacent to the one or more beams and the said edge portion is connected; a plurality of dark areas or shroud, with the one or more beams are connected; and one or more cooling channels, the one or more beams are connected.
2、 根据权利要求1所述的组件,其特征在于,所述一个或多个暗区护罩为压花的。 2. An assembly according to claim 1, wherein said one or more dark areas is embossed shield.
3、 根据权利要求2所述的组件,其特征在于,所述一个或多个压花的暗区护罩包括多个从该一个或多个暗区护罩延伸出的突出部,所述突出部具有多个相互成角度的表面。 3. The assembly according to claim 2, wherein said one or more dark regions embossed shield includes a plurality of projecting portions extending from the one or more dark regions shroud, said projection each portion having a plurality of angled surfaces.
4、 根据权利要求3所述的组件为25mm 。 4. The assembly of claim 3 to 25mm.
5、 根据权利要求1所述的组件一个或多个梁相连接的夹紧装置。 5. The assembly of claim 1 or claim a clamping device connected to a plurality of beams.
6、 根据权利要求5所述的组件穿过所述一个或多个梁设置。 6. The assembly as claimed in claim 5, wherein the one or more through the beam arrangement.
7、 根据权利要求1所述的组件多个用于在其中设置所述一个或多个冷却通道的凹槽。 7. An assembly according to claim 1 wherein a recess is provided for a plurality of the one or more cooling channels.
8、 根据权利要求1所述的组件,其特征在于,所述一个或多个梁包括一个或多个用于在其中设置所述一个或多个冷却通道的凹槽。 8. The assembly of claim 1, wherein said one or plurality of beams comprises one or more grooves provided therein for the one or more cooling channels.
9、 根据权利要求1所述的组件,其特征在于,所述边缘部和所述一个或多个梁由整片材料构成。 9. The assembly of claim 1, wherein said edge portion and one or more of the beams is constituted by the whole sheet material.
10、 根据权利要求1所述的组件,其特征在于,所述一个或多个暗区护罩可拆卸地与所述一个或多个梁连接。 10. The assembly of claim 1, wherein said one or more dark regions of the shroud is detachably connected to the one or more beams.
11、 一种溅射装置,包括: 多个溅射靶;以及靶支撑框架,连接在所述多个溅射靶中的一对溅射耙之间,所述耙支撑框,其特征在于,所述突出部的表面面积约,其特征在于,还包括一个或多个与所述,其特征在于,所述一个或多个夹紧装置,其特征在于,所述暗区护罩包括一个或架包括:-- -个或多个梁,具有用于支撑所述一对溅射耙的凸缘; 一个或多个冷却通道,与所述一个或多个梁相连接;以及--个或多个夹紧装置,与所述一个或多个梁相连接,使得所述一对溅射靶连接在所述一个或多个夹紧装置和所述凸缘之间。 11. A sputtering apparatus, comprising: a plurality of sputtering target; target and a support frame, connected between a pair of said plurality of sputtering target in the sputtering target, the rake support frame, characterized in that, surface area of ​​the projecting portion, characterized by further comprising one or more of said, characterized in that said one or more gripping devices, wherein said shield includes a dark area or holder comprising: - - one or a plurality of beams having a flange for supporting the pair of the sputtering target; one or more cooling channels connected with the one or more beams; and - or a plurality of clamping devices, with the one or more beams are connected, so that the pair of the sputtering target is connected between the one or more clamping means and said flange.
12、 根据权利要求ll所述的装置,其特征在于,还包括与所述一个或多个梁相连接的暗区护罩。 12. The apparatus as claimed in claim ll, wherein, further comprising a dark area with the one or more beams connecting the shroud.
13、 根据权利要求12所述的装置,其特征在于,所述暗区护罩具有压花表面。 13. The apparatus as claimed in claim 12, wherein said embossed surface having a dark region shroud.
14、 根据权利要求13所述的装置,其特征在于,所述压花表面包括多个突出部,每个所述突出部具有多个从所述暗区护罩延伸出的且相互成角度的表面。 14. The apparatus of claim 13, wherein the embossed surface comprises a plurality of projecting portions, each said portion having a plurality of projections extending from said dark region of the shroud and angles to each other surface.
15、 根据权利要求14所述的装置为25mm 。 15. The apparatus of claim 14 to 25mm.
16、 根据权利要求12所述的装置与所述一个或多个梁相连接。 16. The apparatus of claim 12 wherein the one or more connection beams phases.
17、 根据权利要求12所述的装置或多个用于在其中设置所述一个或多个冷却通道的凹槽。 17. The apparatus of claim 12 wherein one or more grooves provided for the one or more cooling channels.
18、 根据权利要求12所述的装置,其特征在于,所述一个或多个梁包括一个或多个用于在其中设置所述一个或多个冷却通道的凹槽。 18. The apparatus as claimed in claim 12, wherein said one or plurality of beams comprises one or more grooves provided therein for the one or more cooling channels.
19、 一种压花的暗区护罩,包括: 护罩主体,具有至少一个弯曲表面;以及多个从所述护罩主体延伸出的突出部。 19. A shield embossed dark area, comprising: a shield body having at least one curved surface; and a plurality of projecting portions extending from the shroud body.
20、 根据权利要求19所述的护罩,其特征在于,所述突出部包括大致呈平面的表面和至少一个相对于所述大致呈平面的表面倾斜的表面。 20. The shield according to claim 19, wherein said projecting portion comprises a substantially planar surface and at least one with respect to the substantially planar surface inclined surfaces.
21、 根据权利要求19所述的护罩,其特征在于,至少一个突出部设置在所述至少一个弯曲表面上。 21. The shield according to claim 19, characterized in that at least one projecting portion provided on at least one curved surface.
22、 一种溅射方法,包括:在一个或多个夹紧装置和支撑梁的凸缘之间连接溅射靶,所述梁与暗区护罩相连接;,其特征在于,所述突出部的表面积约,其特征在于,所述暗区护罩可拆卸地,其特征在于,所述暗区护罩包括一个贴近所述暗区护罩和所述梁设置冷却通道; 使冷却流体在所述冷却通道内流动;以及从所述溅射靶向基板上溅射材料。 22. A method of sputtering, comprising: between one or more clamping means and the support beam flange connection sputtering target, and dark areas of the shroud beam is connected; wherein said projection surface area of ​​about portion, wherein the shroud is detachably dark area, wherein the shroud includes a dark area of ​​the dark area proximate the shroud and the cooling passages beam; cooling fluid the cooling flow passage; and sputter material from the sputter on the substrate targeting.
23、 根据权利要求22所述的方法,其特征在于,还包括: 使所述凸缘与所述溅射耙电性绝缘。 23. The method of claim 22, characterized in that, further comprising: the flange and electrically insulated from the sputtering target.
24、 根据权利要求22所述的方法,其特征在于,所述暗区护罩包括压花的表面,所述压花的表面具有多个突出部,每个所述突出部具有多个从所述暗区护罩延伸出的表面,所述溅射方法还包括:膨胀和收縮所述多个突出部。 24. The method of claim 22, wherein the embossed surface comprises a dark region of the shroud, said embossed surface having a plurality of projecting portions, each said portion having a plurality of projections from the surface region of said shroud extend out of the dark, the sputtering method further comprising: expansion and contraction of the plurality of projecting portions.
25、 根据权利要求22所述的方法,其特征在于,还包括将所述暗区护罩接地。 25. The method of claim 22, characterized in that the ground shield further comprises the dark area.
26、 根据权利要求22所述的方法,其特征在于,所述基板的表面面积为1平米或者更大。 26. The method of claim 22, wherein the surface area of ​​the substrate 1 is a square or greater.
27、 根据权利要求22所述的方法,其特征在于,所述冷却通道设置在所述梁的内部。 27. The method of claim 22, wherein the cooling passage is provided in the interior of the beam.
28、 根据权利要求22所述的方法,其特征在于,所述冷却通道与所述暗区护罩相接触。 28. The method of claim 22, wherein the cooling passage to the dark area in contact with the shroud.
CN 200710123289 2006-07-21 2007-07-23 Cooled dark space shield for multi-cathode design CN101109069B (en)

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