TW200823308A - Cooled dark space shield for multi-cathode design - Google Patents

Abstract

A cooled dark space shield for a multi-cathode, large area PVD apparatus is disclosed. For multi-cathode systems, a dark space shield between adjacent cathodes/targets may be beneficial. The shields may be grounded and provide a path to ground for electrons present within a sputtering plasma. Because the shields are between adjacent targets, the grounded shields may contribute to the formation of a uniform plasma within the processing space by acting as anodes. As the temperatures in the chamber fluxuate between a processing temperature and a downtime temperature, the shields may expand and contract. Cooling the shields reduces the likelihood of expansion and contraction and thus, reduces the amount of flaking that may occur. Embossing the surface of the shields may reduce the amount of material deposited onto the shields and control the expansion and contraction of the shields.

Description

</ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; [Prior Art]

The physical vapor deposition process (pVD) using magnetron is a method of depositing materials in the United States. In the PVD process, the dry material can be biased by two forces so that the ions generated in the treatment zone bombard the surface of the target with sufficient energy to strike the atoms from the target. The process of applying a bias to the target to create a plasma, thereby creating an ion bombardment of the target surface and removing atoms from the surface of the target is commonly referred to as sputtering. The sputtered atoms generally travel toward the substrate to be sputtered, and the sputtered atoms are deposited on the substrate. Alternatively, the atom reacts with a gas in the plasma, such as nitrogen, to deposit a compound on the substrate in a responsive manner. Reactive deposition is often used to form a thin barrier layer of titanium nitride or tantalum nitride on a substrate (barrier laye or nucleation layers) direct current (DC) flash and alternating current (AC) sputtering In the form of a shot, the target is biased to attract ions toward the target during sputtering. A negative bias of between -100 volts (V) and -600 V can be applied to the target to attract The positive ions formed by the working gas (such as argon) advance toward the target to emit a few atoms. Usually, the sides of the sputtering chamber are covered with a mask to protect the chamber from the deposition. Electrically grounded to provide an anode opposite the target's polarity to capacitively connect the target power source to the plasma generated in the sputtering chamber 5 200823308. During sputtering, the material is sputtered and deposited onto The material deposited on the exposed surface of the chamber and the surface of the road surface may be peeled off and contaminated. Therefore, there is a need in the art for a method for reducing substrate contamination by shovel and soil. SUMMARY OF THE INVENTION The present invention discloses a multi-cathode 'large: dark Zone mask. For two:::: Set a dark zone mask between adjacent cathodes/fe materials #π to ground, and ... the electrons in the money... provide the connection =: two in the mask located adjacent Between the dry materials, the grounded shield can be used internally to promote the formation of a uniform sentence in the processing space. The chamber will expand due to the chamber temperature: the temperature fluctuates between the processing temperature and the shutdown temperature. Cooling the mask reduces the likelihood of expansion and contraction, and reduces the amount of flaking that can occur. Embossing the surface of the mask reduces the amount of material that accumulates on the mask and controls the expansion of the mask and Shrinking. In an embodiment, a sputtering target support frame assembly is disclosed. The member includes - an edge portion disposed around the plurality of targets, or a plurality of beams spanning the length between the shoes (beams), or a plurality of dark-area masks and or more colds: gp; ho, all I, where the one or more beams are connected to the edge portions The one or more beams are connected; and or the evening cooling channels are connected to the one or more beams. A sputtering apparatus is disclosed in the embodiment. The sputtering apparatus includes a sputtering material support frame and a sputtering target support frame coupled between a pair of sputtering targets 6 200823308 of the plurality of sputtering targets. One or more beams having a support or a plurality of cooling passages and the one or more clamping mechanisms coupled to the one or more cobalt clip mechanisms and the reader target support frame The method includes: a flange to the pair of sputtering targets; a plurality of beams connected; and one or more sweet phases coupled such that the pair of sputtering targets are coupled between the flanges.

In yet another embodiment, an embossed dark zone cover is disclosed. The mask includes a mask body and a plurality of protrusions extending from the mask body, and the mask body has at least one curved surface; in another embodiment, a sputtering method is disclosed. The method includes coupling a sputtering target between one or more clamping mechanisms and a flange of a support beam and connecting the beam to a dark area mask adjacent to the dark area mask and the beam A cooling passage is provided to allow the cooling fluid to flow within the cooling passage, and the material is sputtered onto the substrate from the sputtering target. [Embodiment]

A cooled dark zone mask for a multi-cathode, large area PVD device is disclosed. For multi-cathode systems, it is beneficial to provide a dark area mask between adjacent cathodes/dry materials. The mask can be grounded and provide a ground path for the electrons present in the sputtered plasma. Since the mask is located between adjacent targets, the grounded mask acts as an anode to help form a uniform plasma in the processing space. Since the temperature in the chamber fluctuates between the processing temperature and the shutdown temperature, the mask expands and contracts. Cooling the hood reduces the likelihood of expansion and contraction, which reduces the amount of flaking that can occur. Embossing the surface of the mask (Ernb〇ssing) 7

200823308 The method of reducing the amount of material deposited onto the mask and controlling the mask is exemplified by PVD, and the invention can be applied to processing large-area substrates, such as Santa Clara, California. material

PVD system produced by the son of Materials, Inc., Santa Clara, California. It should be understood, however, that other system configurations of sputter materials include those configured to be used in the substrate. The United States submitted on September 13, 2005 and the full text of this document is hereby incorporated by reference as the demand for larger flat panel display devices has increased. As the size of the substrate increases, the splash will inevitably increase. It is common for flat panel display devices and sputtering targets with solar power greater than 1 meter. It is very difficult and difficult to obtain a large molybdenum plate (i.e., 丨8m 2.5mx 2.8mx10mm, etc.) by using a single sputtering target of a large size and is quite expensive. The target requires a lot of money, ^ / V. One-piece heartwood for production one can be: $10,000. Therefore, considering the cost 4 alone, the use of nitrogen can still achieve the deposition of a large area of the target. These targets can have different compositions of ^ ^ . ^ 1 P-passenger substrate and chamber scale +, one size increase brings the challenge of uniform deposition. The expansion and contraction of electrons in the gossip. Explain the PVD system company of the company (Applied AKT8 can also be applied to the sample system of the PolyU area patent application, 'the size of the substrate is also the size of the dry material, the length of the key block material to take responsibility For example, • 2rnxl〇mm, large area of molybdenum (ie, costing 1 to 500 smaller target homogenizations would be very challenging, one of which attracted to the device 8 200823308 Traditionally, the chamber wall and the pedestal or substrate slab are grounded to function as an anode, as opposed to a sputtering target as a cathode. The grounded chamber wall as an anode attracts the plasma. Electrons, therefore, tend to form high-density electricity near the walls of the chamber. The density of plasma near the walls of the μ chamber may increase the deposition on the substrate adjacent the walls of the chamber, as follows: The deposition on the substrate. On the other hand, the grounded pedestal also functions as an anode. The pedestal may span most of the length of the processing space. Because 舲, the pedestal can not only provide electrons at the edge of the pedestal. The grounding path, and also provides a grounding path for the electrons in the middle of the pedestal. Since the mother anode, whether it is the chamber wall or the pedestal, the anode is equally formed and the plasma is evenly dispersed throughout the processing space. The ground path of the middle portion of the pedestal compensates for the pedestal edge and the chamber wall: the ground path. By uniformly distributing the plasma in the processing space, uniform deposition is achieved throughout the substrate. When the substrate is an insulating substrate (such as glass or polymer), the substrate does not conduct =, so electrons cannot pass through the substrate. As a result, when the substrate substantially covers the substrate branch, the pedestal support cannot provide sufficient anode surface. In the case of a solar panel or a (four) board display device, the size of the substrate that blocks the ground path through the pedestal may be very large. In the field of flat panel displays, the size is 1 meter square. It is very common. For the lmxim substrate, the (4) path through the pedestal is blocked by the area of 1 square / Λ Μ Μ 2 1 ^ tq 尺. The covered chamber wall and the pedestal edge are the quasi-grounding path of the plasma electrons. There is no grounding path near the center of a board. If the large-area substrate is: Yanxin 9 200823308: There is another chamber covered by the substrate A high-density plasma is formed near the edge of the wall and the pedestal. The high-density plasma preparation near the chamber wall and the pedestal edge becomes thinner near the center of the treatment zone without the ground path. In the vicinity; in the case of a grounding path, the plasma may not be uniform, and deposition on a large-area substrate may also be uneven.

In addition to the interplates, in order to help ensure a uniform plasma, the anode and the anode outside the chamber wall are available. For the multi-cathode system used, the anode can be placed in the adjacent «set in the chamber #!贱 轻 轻 / 机 机 机 机 机 第 第 第 第 第 第 第 第 第 第 第 第 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The device 1〇0 includes a substrate 1〇4 supported on a susceptor 102, wherein the susceptor 102 is received in the chambers 116 of the device 1〇〇. The chamber 璧 116 is grounded. The substrate 104 is disposed at a position opposite to the plurality of sputtering targets 1〇6a to i〇6f. Between the substrate 104 and the dry materials 106a~106f is a processing zone 112. The mask 1 14 protects the chamber wall 11 6 from deposition.

In an embodiment, each of the sputtering targets 10a to 6f has a corresponding meniscus plate 108a to 10f. In another embodiment, each of the sputtering targets 1〇6&amp;~1〇6€ can be joined to a single common backing plate. While the invention will be described with reference to the foregoing embodiments, it should be understood that the description is equally applicable to embodiments of a single common backing plate. A plurality of cooling passages are provided in the backing plate 1 0 8 a to 1 0 8 f. Cooling the flow channel to control the temperature of the backing plate 1 〇 8 a~1 0 8 f, thereby smashing the temperature of the target l〇6a~106f. The cooling fluid can be any cooling fluid in the field of £4D. In an embodiment, the cooling fluid is water. 10 200823308 In another embodiment, the cooling fluid is in a gaseous state. Magnetrons 118 are disposed in the magnetron lumens 12 behind the backing plates 108a to 108f. The magnetron 118 can be a fixed magnetron assembly or a movable magnetron assembly. In one embodiment, the magnetrons ^^ &amp; are a plurality of magnetron assemblies' wherein the number of magnetrons n8 corresponds to the number of dry materials 106a-106f. When the number of magnetrons 118 corresponds to the number of targets 106a-106f, the magnetic field across each individual target can be controlled and adjusted. The 122 coffins 1〇6a~1〇6f can be joined to the backing plate 1 0 8 a~1 〇 8 f by a bonding layer. The bonding layer 122 can be any known dead material in the art. An exemplary adhesive material that can be used to bond dry materials 106a-106f to backing sheets 108a~1〇8f is disclosed in U.S. Patent Application Serial No. 11/224, filed on Sep. The entire contents thereof are incorporated herein by reference. The money shots 106a~106f can be placed on a frame assembly. The frame assembly can have one or more beams 124a-124e that span the processing space 丨i 2 . The frame assembly can also have a ledge 134 for attachment to the frame assembly. The sputtering targets 106a to 106b may be disposed on the flanges 134 and the beams 124a to 124e such that the sputtering targets 〇6a to 1〇6f are supported on the flanges 134 and the beams 124a to 124e. The sputtering targets 1〇6a to 1〇6f may be insulated from the beams 124a to 124e and the flange 134 by the electrical insulator 14〇. Each of the shoe materials 106a to 106f can be connected to a corresponding power source 128a to 12 8f ' so that the respective targets i 〇 6a 〜 1 〇 6f can be independently supplied with power. By providing independent power sources 128a to 128f for the respective targets l6a to 106f, the power of each of the dry materials 1 06a~l 〇6f can be individually controlled by 11 200823308 to achieve uniform deposition. The power source 1 2 8 a~1 2 8 f may be DC, AC, pulse, shot, or a combination thereof. The device can be controlled by controller 132. An exemplary power supply configuration is disclosed in U.S. Patent Application Serial No. 1 1/42, No. 2, filed on Jun. The beams 1 2 4 a~1 2 4 e and the flanges 1 3 4 constituting the frame assembly may be grounded such that the frame assembly functions as an anode. In an embodiment, the frame assembly including 1 2 4 a~1 2 4 e and flange 1 34 may be of unitary construction. Each beam 124a-124e has a corresponding dark zone 126a-126e connected thereto. The dark area masks 126a-126e protect the beams 124a-124e from the desired deposition and can be electrically connected to the beams i 2 4 a to 2 4 e such that the area masks 12 6a to 126e can serve as anodes. In an embodiment, the dark regions 126a-126e may be made of the same material as the sputtering target. In another example, the dark area masks 126a-126e may be made of stainless steel through bead Masted and flame sprayed with aluminum, or made of the same material as the sputter dry material. The dark area masks 12 6 - 1 1266 may be exposed to the processing zone 112, experiencing significant temperature changes between processing and shutdown. For the fluctuation of the compensation degree, the dark area masks 126a to 126e can be cooled by the cooling fluid flowing in the cooling passages 380. The dark area masks 126a to 126e are detachably connected to the beams 124a to 124e. Figure 2 is a bottom plan view of a sputtering target member 2 in accordance with an embodiment of the present invention. A plurality of ejector pins 2 〇 4a to 204f may be disposed erally across the splash member 200 and disposed in the frame assembly 2 〇 2 . Frame average frequency month case beam cover non-dark cover practical and warm unloading frame 12

200823308 Component 202 can include one or more beams 2〇6. In one embodiment the frame assembly 220 is constructed from a single piece of material. It should be understood that although six sputtering targets 204a to 204f are illustrated, more or more dry materials 204a to 204f may be used. Further, although the cartridges J 204a to 204f shown in the drawing are in the form of sputtering target strips, the present invention can also be designed in a variety of configurations. For example, a sputter target strip composed of a plurality of sputtering targets can be used. An exemplary sputter dry material that can be joined together to sputter a dry bar is described in U.S. Patent Application Serial No. 1 1/4 24,467, issued June 15, 2006, and U.S. Patent Application Serial No. 11/424,478. The entire contents of these two applications are hereby incorporated by reference. Figure 3 is a schematic illustration of a frame assembly 3 〇 根据 in accordance with an embodiment of the present invention. The frame member 30 0 may include one or more beams 310 that extend between the outer segments 302. The sputter target assembly 306 can be disposed in the opening 3 0 8 of the frame assembly 300 and disposed on the flange 310 of the beam 340 and the body portion 302. Figure 4 is a perspective view of a beam assembly disposed between adjacent &amp; amps in accordance with an embodiment of the present invention. Each of the target assemblies includes a squirting dry material 4〇2b drilled onto the backing sheets 404a, 404b by Leo 406a, 406b. The temperature of the backing sheets 404a, 404b can be controlled by one or more cooling passages 408 in the backing sheets 404a, 404b. The backing layer 410 is applied to the back side of the backing sheets 404a, 404b to facilitate magnetic, not shown) movement over the entire backing sheets 404a, 404b, and the tubes are insulated. In the middle, the box shows that the less splash target is delivered with other brick connections to form a patented three-dimensional frame portion placed on the outer frame assembly fe junction layer 402a's set of liner coated t-tube (Figure and Magnetic 13 200823308 The beam assembly 4 1 2 may include a shame p 426. The clamp 428 may be disposed through the beam body 414 to which the beam cover 414 can be attached to the pole body 426. The connection mechanism component is fixed to The clamp 428 and the beam body 426 are placed between the sputtering target, the flange, and the flange 432 of the main body 426. The electrical insulation member 424 can be used to erect the pq East ^ nm # material component and the beam master. Any connection of the disk 426 electrical isolation to connect the dark away. The field φ 1 Dingzhi area mask 414 can be utilized similarly to the beam assembly 412, and the field can also be utilized.

Any connection method known in the art is connected to the technology «, seven edge pieces 4 2 4 and beam elements 4 1 2 . Seal 416 can be disposed between dark area mask 414 and beam body 426. Additional sealing elements 4 1 8 can be placed between the back of the month 4 〇 4 a, 4 0 4 b and the beam assembly 412. As described above, the 'beam assembly* 卞4 1 2 and the dark area mask 4 1 4 can be grounded to effectively function as an anode. The unique design of the multi-cathode PVD device allows the anode to be placed in the process of both exteriors but still achieves uniformity of electropolymerization. For a plurality of money target strips spaced apart across the common backing plate (or each sputtering target having its own backing plate), there is a gap between adjacent sputtering targets. The spacing between the targets can avoid arcing. Since the anode helps to reduce the occurrence of electricity, it is advantageous to provide an anode in the space between adjacent Tibetan materials. Since the beam assembly 412 does not block any lining of sight between the sputtering targets 4〇2a, 4〇2b to the substrate, the beam assembly 4 1 2 is disposed between the sputtering coffin assemblies. advantageous. By providing the beam assembly 412 adjacent the sputter targets 402a, 402b, the shielding of the substrate by the anode can be reduced. It may be necessary to have beam assembly 412 over sputtering targets 402a, 402b 14 200823308

And extend into the processing space. When the material is spattered from the sputter targets 402a, 402b, the material may travel in all directions. Therefore, material sputtered from the avoidance target 402a' 402b may deposit on the beam assembly 412. Therefore, the dark area mask 4 14 is connected to the beam assembly 4丨2. Any material sputtered from the carbon shot dry material 402a '402b will deposit on the dark area mask 414 instead of the deposition beam assembly 412. The dark area mask 414 can be replaced and/or cleaned so that the beam assembly 412 can be infinitely heavy. When the dark area mask 414 needs to be replaced and/or cleaned, the dark area can be removed 414 from the beam assembly 412. . The dark area mask 414 can be curved to reduce the amount of material that may be deposited onto the dark area mask 4丨4. The temperature within the PVD device 400 may fluctuate between the processing temperature and the shutdown temperature. The processing temperature can be high enough to cause the chamber components to become "red hot". The shutdown temperature can be as low as the indoor temperature fluctuation, and the dark area mask 414 will expand and contract. When the dark area mask 414 is swollen and shrunk, the material deposited onto the dark area mask 414 may peel off and contaminate the substrate. In addition, the processing temperature may approach or exceed the melting point of the photographic material. If any of the shots fall onto the dark area mask 414 and reach the dazzling point of the machine material, the resulting material may ... drop on the mask 414 and contaminate the substrate. Controlling the temperature of the dark zone material 414 is highly advantageous because it reduces the expansion and contraction of the 曰&amp; mask 414. In addition, the temperature of the dark area mask 414 can be controlled to remain below the melting point of the extinguishing material, thereby reducing any dripping onto the substrate. At least one cooling passage 42 is disposed within the beam body passage 420 thus 426. Cooled to be adjacent to the beam body 426 and the dark area mask 414. Cooling 15 200823308 Channel 420 may be a continuous passage through beam master® 426 of beam assembly 412, or it may be a plurality of cooling passages 420 ° Cooling passage 420 is sealed by sealing element 422 to ensure that cooling flow does not enter the process Space contaminates the substrate. The cooling fluid can be any cooling fluid known in the art. In an embodiment, the cooling fluid is water. In another embodiment, the cooling fluid is gaseous. Figure 5 is a cross-sectional view of a beam assembly disposed between adjacent target assemblies in accordance with another embodiment of the present invention. The cooling passages 520 may be disposed within the carved out portion of the dark area shield 530 and surrounded by the cooling passage frame 514. The cooling passage 520 is thus brought close to the beam body 526. Figure 6 is a perspective view of a dark area mask 600 in accordance with an embodiment of the present invention. In one embodiment, the dark area mask 600 is embossed such that one or more protrusions 6〇2, 6〇4 appear on its surface facing the processing space within the PVD chamber. The projections 602, 6〇4 can be separate and substantially square projections 602, long rectangular projections 604, or a combination thereof. The projections 6〇2, 6〇4 on the dark area mask 600 provide a plurality of smaller surfaces that may be deposited during the deposition process. However, the 6 mm embossed table in the dark area is beneficial for any possible expansion and contraction of the dark area mask 6GG. During the change in temperature, the projections 6〇2, 6〇4 may be expanded and contracted without expanding and contracting the entire dark area mask. Therefore, the projections 602, 604 can reduce the amount of peeling that may occur. In one embodiment, the large exit pupil 602 has a surface area of about 25 square millimeters. The surface is roughened relative to a simple treatment such as a bead treatment, and the embossing allows for a larger surface area to allow the dark area mask 6 to deposit more material before replacement.

200823308 "The material" is therefore very favorable. Dusting can cause the dark zone mask to continue to be used for up to twice the dark zone mask of the surface roughness. Figure 7A is a top plan view of the projection 700 formed on the darkened surface in accordance with an embodiment of the present invention. Fig. 7B is a cross-sectional view of the projection portion 700 of Fig. 7. The projection 700 can have an inclined table and a substantially flat top surface 704. In an embodiment, the tilt table is tilted at an angle greater than about 25 degrees. In a multi-cathode PVD system, it is advantageous to provide a cooled dark zone mask between adjacent targets because it can be shadowed and can increase plasma uniformity. Cooling and embossing in dark areas can reduce spalling or dripping, thus reducing contamination. While some of the embodiments of the present invention have been described above, other embodiments of the invention may be devised without departing from the scope of the invention. The scope of the present invention is defined by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS For a more detailed understanding of the above-described features of the present invention, the present invention may be more specifically described in conjunction with the accompanying claims. The drawings are merely illustrative of the invention and are not intended to limit the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of a PVD device according to an embodiment of the present invention; 600 is held to the right. The face 702 face 702 of the cover embossing A can be used as a mask to reduce the substrate but is not defined. Example In the figure. 17 200823308 Figure 2 is a bottom view of a sputtering target assembly 200 in accordance with an embodiment of the present invention; and Figure 3 is a frame assembly 300 in accordance with an embodiment of the present invention. 3 is a cross-sectional view of a beam assembly disposed between adjacent target assemblies in accordance with an embodiment of the present invention; FIG. 5 is a beam assembly disposed between adjacent target assemblies in accordance with another embodiment of the present invention; Sectional view

6 is a perspective view of a dark area mask 600 according to an embodiment of the present invention; and FIG. 7A is a plan view of a protrusion 700 formed in a dark area mask embossed surface according to an embodiment of the present invention; Fig. 7B is a cross-sectional view showing the projection 700 of Fig. 7A. For the sake of understanding, the same elements common to the figures are denoted by the same drawing element symbols when possible. It is to be understood that the elements shown in one embodiment may be advantageously employed in other embodiments as specifically described. 102 base 106a_f target 11 0 cooling channel 11 4 mask 118 magnetron [Main component symbol description] 100 device 104 base material I 08a-f backing plate II 2 processing space 116 chamber 璧 18 200823308

120 Magnetoelectric lumen 124a-e Beam 12 6a -e Mask 128a-f Electrical 130 Sealing element 132 Control 134 Flange 1 3 8 Cooling 140 Insulator 200 Target 202 Frame assembly 204a-f Target 206 Beam 300 Frame 302 External Frame Section 304 beam 306 material assembly 3 0 8 opening 310 flange 400 device 402a-b target 404a-b back 406a-b bonding layer 4 0 8 cooling 410 backing plate coating 4 1 2 beam set 414 mask 416, 418 420 Cooling Channel 422 Seal 424 Electrical Insulation 426 Beam Main 428 Clamp 430 Connection 432 Flange 514 Mask 520 Cooling Channel 526 Beam Main 530 Cooling Channel Frame 600 Mask 602 704, 604, 700 Protruding Top Surface 702 Tilt Source Channel assembly component assembly liner passage member sealing element member body mechanism body assembly surface 19

Claims (1)

200823308 X. Patent Application Range: 1. A sputtering target support frame assembly comprising: an edge portion disposed around a plurality of targets; one or more beams between adjacent sputtering targets Crossing a length, and the one or more beams are coupled to the edge portion; one or more dark area masks connected to the one or more beams; and one or more cooling channels, and the one Or multiple beams are connected. 2. The assembly of claim 1 wherein the one or more dark zone masks are embossed. 3. The assembly of claim 2, wherein the one or more embossed dark area masks comprise a plurality of protrusions extending from the one or more dark area masks, the protrusions having A plurality of surfaces that are at an angle to each other. 4. The assembly of claim 3 wherein the surface area of the projections is about 25 square millimeters (mm2). 5. The assembly of claim 1, further comprising: one or more jaw mechanisms coupled to the one or more beams. 6. The assembly of claim 5, wherein the one or more pliers 20 200823308 The clip mechanism is disposed to extend through the one or more beams. 7. The assembly of claim 1, comprising one or more grooves for providing a passage in the grooves. 8. The assembly of claim 1 comprising one or more grooves for cooling the channels in the grooves. 9. The assembly of claim 1 wherein the one or more beams comprise a single piece of material. 10. The assembly of claim 1, wherein the dark area mask is detachably transferred to the one or more beams. 11. A sputtering apparatus comprising: a plurality of sputtering targets; and a target support frame coupled between the sputtering targets, the target support frame comprising: one or more beams, The equal beam has a flange for the material; one or more cooling channels, and the one or more of the one or more cooling regions of the one or more cooling zones are disposed in the one or more of the edges And a pair of the one or more targets in the pair of sputters supporting the plurality of beams of the pair of sputtering targets; 21 200823308 and one or more button clip mechanisms coupled to the one or more beams The pair of sputtering targets are coupled between the one or more jaw mechanisms and the flange. 12. The device of claim 11, further comprising a dark area mask, the dark area mask being coupled to the one or more beams. 13. The device of claim 12, wherein the dark area mask has an embossed surface. The device of claim 13, wherein the embossed surface comprises a plurality of protrusions, each protrusion having a plurality of surfaces extending from the dark area mask and angled with each other. The device of claim 14, wherein the projection has a surface area of about 25 square millimeters. 16. The device of claim 12, wherein the dark area mask is detachably coupled to the one or more beams. The device of claim 12, wherein the dark area mask comprises one or more recesses for providing the one or more cold 22 200823308 channels in the recesses. The device of claim 12, wherein the one or more beams comprise one or more grooves for providing the one or more cooling channels in the grooves. 19. An embossed dark area mask comprising: A mask body having at least one curved surface; and a plurality of protrusions extending from the mask body. The mask of claim 19, wherein the protrusions comprise a substantially flat surface and at least one surface that is inclined relative to the substantially flat surface. The mask of claim 19, wherein at least one protrusion is disposed on the at least one curved surface. 22. A method of sputtering, comprising: connecting a sputter target between one or more jaw mechanisms and a flange of a support beam, and the beam is coupled to a dark area mask; adjacent to the dark A cooling passage is disposed at the area mask and the beam; a cooling fluid flows in the cooling passage; and the material is hidden from the dry material toward the substrate. The method of claim 22, further comprising: electrically isolating the flange from the sputtering target. The method of claim 22, wherein the dark area mask comprises an embossed surface, the embossed surface having a plurality of protrusions, and each of the protrusions having a plurality of masks from the dark area Extended surface; the sputtering method is also The plurality of protrusions are expanded and contracted. 2 5. The method of claim 22, further comprising grounding the dark area mask. The method of claim 22, wherein the substrate has a surface area of 1 square meter or more. 27. The method of claim 22, wherein the cooling passage ^ is disposed within the beam. The method of claim 22, wherein the cooling passage contacts the dark area mask. twenty four