KR20080009031A - Cooled dark space shield for multi-cathode design - Google Patents

Abstract

A cooled dark space shield for a multi-cathode design is provided to prevent material deposited on an exposed surface of a chamber from being delaminated by cooling or bulking the dark space shied. A frame assembly for supporting a sputtering target comprises an edge part surrounding a plurality of targets(106a,106b,106c,106d,106e,106f), one or more beams(124a,124b,124c,124d,124e), one or more dark space shields(126a,126b,126c,126d,126e) and one or more cooling channels. The beam lengthens a distance between adjacent targets and is coupled to the edge part. The dark space shied is coupled to the beams. The cooling channel is coupled to the beams. One or more dark space shields are embossed.

Description

Cooled dark shield for multi-cathode design {COOLED DARK SPACE SHIELD FOR MULTI-CATHODE DESIGN}

Embodiments of the present invention generally relate to physical vapor deposition (PVD) systems having a dark space shield cooled between adjacent sputtering targets.

PVD using magnetrons is one method of depositing materials on a substrate. During PVD processing, the target is electrically deflected such that ions generated in the processing region have sufficient energy to remove atoms from the target to impact the target surface. Deflection processing of a target that results in plasma generation that causes ions to impact and remove atoms from the target surface is generally referred to as sputtering. Sputtered atoms generally move toward the sputter coated substrate and the sputtered atoms are deposited on the substrate. Alternatively, the atoms react with a gas in a plasma, for example nitrogen, to operatively deposit the mixed material on the substrate. Reactive sputtering is often used to form titanium nitride or tantalum nitride and thin barriers on a substrate.

Direct current (DC) sputtering and alternating current (AC) sputtering are sputtering forms in which the target is deflected to attract ions toward the target. The target may be deflected with negative deflection in the range of about −100 to −600 V to attract cations of the working gas (eg, argon) towards the target to sputter atoms. Usually the sides of the sputtering chamber are covered with a shield to protect the chamber wall from sputter deposition. The shield is electrically grounded, thus providing an anode as opposed to a target cathode that capacitively couples target power to the plasma generated within the sputtering chamber.

During sputtering, materials may be sputtered and deposited on an exposed surface in the chamber. Materials deposited on the exposed surface of the chamber may flake off or contaminate the substrate. Therefore, a technique for reducing substrate contamination is needed.

A cooled dark shield for a multi-cathode wide area PVD device is disclosed. For multi-cathode systems, female shields between adjacent cathodes / targets are preferred. The shield provides a ground path for electrons that are grounded and present in the sputtering plasma. Where the shield is between adjacent targets, the ground shield acts as an anode, contributing to the uniform plasma formation in the processing space. As the temperature in the chamber flows between the processing temperature and the downtime temperature, the shield can expand and contract. Cooling the shield reduces this expansion and contraction and thus reduces the amount of peeling that can occur. Embossing the surface of the shield can reduce the amount of material deposited on the shield and control the expansion and contraction of the shield.

In one embodiment, a sputtering target support frame assembly is disclosed. The assembly includes an edge portion surrounding a plurality of targets, at least one beam extending the length between adjacent targets and coupled with the edge portion, at least one arm shield coupled with the at least one beam and the at least one One or more cooling channels coupled with the beam.

In another embodiment, a sputtering device is disclosed. The apparatus includes a target support frame coupled between a plurality of sputtering targets and a pair of sputtering targets of the plurality of sputtering targets. The target support frame includes at least one beam having a ledge for supporting the pair of sputtering targets, at least one cooling channel coupled with the at least one beam, and at least one coupled with the at least one beam. As a clamping mechanism on the pair of sputtering targets includes one or more clamping mechanisms coupled between the one or more clamping mechanisms and the lathe.

In another embodiment, a swollen female shield is disclosed. The shield includes a shield body having one or more curved surfaces and a plurality of protrusions extending from the shield body.

In another embodiment, a sputtering method is disclosed. The method includes coupling a sputtering target between a shelf of a support beam coupled to a female shield and one or more clamping mechanisms, providing a cooling channel adjacent the beam and the female shield, cooling in the cooling channel. Flowing a fluid and sputtering material from the sputtering target on a substrate.

A cooled dark shield for a multi-cathode wide area PVD device is disclosed. For multi-cathode systems, dark shields between adjacent cathodes / targets are useful. The shield can be grounded and can provide a ground path for electrons present in the sputtering plasma. Due to the shield between adjacent targets, the grounded shields can act as an anode, contributing to the formation of an even plasma in the processing space. As the temperature in the chamber flows between the processing temperature and the downtime temperature, the shield can expand and contract. Cooling the shield reduces expansion, shrinkage and the like, thus reducing flaking that may occur. Inflating the shield surface can reduce the amount of material deposited on the shield and control the expansion and contraction of the shield.

The invention is described in detail below, which can be used in PVD systems for wide area substrate processing, such as PVD systems available from AKT ^® , a subsidiary of Applied Materials, Inc. of Santa Clara, California. However, it is to be understood that sputtering targets may be used in other system configurations, and such systems include systems configured to process wide area round substrates. Exemplary systems that can be used in the present invention are disclosed in US application Ser. No. 11 / 225,922, filed Sep. 13, 2005, which is incorporated herein by reference.

As the demand for wider flat panel displays increases, the substrate size must also correspond. As the substrate size increases, the size of the sputtering target must also correspond. For flat panel displays and solar panels, sputtering targets having a length of 1 meter or more are commonly used. It is considered difficult and expensive to produce a roughly uniform sputtering target size from the ingot. For example, obtaining large molybdenum plates (ie 1.8m x 2.2m x 10mm, 2.5m x 2.8m x 10mm, etc.) is difficult and expensive. A single broad molybdenum target (ie 1.8 m X 2.2 m X 10 mm) can cost about $ 15,000,000 in manufacturing. Therefore, it is beneficial to use a large number of small targets only from an economic point of view, but the deposition uniformity of wide area sputtering targets must be achieved. Multiple targets can be mixtures of the same configuration or can be different mixtures.

Various attempts have been made to increase substrate and chamber sizes. There is an even deposition among these attempts. Electrons in the sputtering target are attracted to the device in a grounded device. Traditionally the chamber wall and susceptor or substrate support are grounded and thus function as sputtering targets and galley anodes that function as cathodes.

Grounded chamber walls that function as anodes attract electrons from the plasma and thus tend to produce higher density plasma around the chamber walls. Higher density plasma around the chamber wall can enhance deposition on the substrate around the chamber wall and reduce deposition away from the chamber wall. In contrast, a grounded susceptor functions as an anode. The susceptor can be extended by a sufficient length of processing space. Thus, the susceptor does not only provide a ground path for electrons at the susceptor edge, but also in the middle of the susceptor. The ground path in the middle of the susceptor is balanced with the ground path at the susceptor edge, with each anode acting as an anode for the susceptor or chamber wall and equalizing the plasma over the processing space. Scatter it. Even plasma distribution across the processing space can result in even deposition across the substrate.

If the substrate is an insulating substrate (such as glass or polypolymer), the substrate is nonconductive and thus no electrons pass through the substrate. As a result, if the substrate covers almost the substrate support, the substrate support does not provide a sufficient anode surface.

For substrates for flat panel displays or for wide area substrates such as solar panels, the size of the substrate blocking the ground path through the susceptor may be important. Substrates ranging from one meter to one meter are commonly used in flat panel display applications. For a 1 meter times 1 meter substrate, the ground path for the susceptor should block an area of 1 square meter. Thus, susceptor edges and chamber walls not covered by the substrate must be ground paths for electrons in the plasma. No ground path exists near the center of the substrate. In wide-area substrates, high density plasma is formed near the susceptor edges and chamber walls that are not covered by the substrate. The high density plasma near the chamber wall and susceptor edge may be a thin plasma near the center of the processing region where no ground path exists. Without a ground path near the center of the processing region, the plasma may not be even and therefore deposition on a wide area substrate may not be even.

An anode can be provided in the chamber in addition to the susceptor and chamber walls to ensure even plasma. In a multi-cathode system in which multiple sputtering target strips / panels are used, the anode can be located between adjacent sputtering target strips / panels.

1 illustrates a cross-sectional view of a PVD device 100 in accordance with one embodiment of the present invention. The device 100 includes a substrate 104 supported on a susceptor 102 contained within the chamber wall 116 of the device 100. Chamber wall 116 is grounded. The substrate 104 is located opposite to the plurality of sputtering targets 106a-106f. There is a processing region 112 between the substrate 104 and the targets 106a-106f. Chamber wall 116 is protected from deposition by shield 114.

In one embodiment, each sputtering target 106a-106f has a corresponding backing plate 108a-108f. In other embodiments, each sputtering target 106a-106f can be coupled to one common backing plate. Although the present invention has been described according to the foregoing embodiments, it should be noted that one common backing plate may equally be applied.

Cooling channels 110 are present in the backing plates 108a-108f. The cooling fluid flows through the cooling channel 110 to control the temperature of the backing plates 108a-108f and thus the temperature of the sputtering targets 106a-106f. The cooling fluid can be any conventional cooling fluid known in the art. In one embodiment, the cooling fluid is water. In other embodiments, the cooling fluid may be gaseous.

A magnetron 118 is located in the magnetron chamber 120 behind the backing plates 108a-108f. The magnetron 118 may be a stationary magnetron assembly or a movable magnetron assembly. In one embodiment, the magnetron 118 is a plurality of magnetron assemblies, the number of magnetrons 118 corresponding to the number of targets 106a-106f. If the number of magnetrons 118 corresponds to the number of targets 106a-106f, the magnetic field across each target can be controlled and adjusted.

The targets 106a-106f are coupled to the backing plates 108a-108f by the bonding layer 122. The bonding layer 122 may be any bonding material known in the art. Exemplary binders used to bind the targets 106a-106f to the backing plates 108a-108f are disclosed in US Application No. 11 / 224,221, filed Sep. 12, 2005, and incorporated herein by reference.

Sputtering targets 106a-106f may be located on the frame assembly. The frame assembly may have one or more beams 124a-124e extending the processing space 112. The frame assembly may also have a shelf 134 coupled to the frame assembly. Sputtering targets 106a-106f can be located on shelves 134 and beams 124a-124e such that sputtering targets 106a-106f can be placed on shelves 134 and beams 124a-124e. . The sputtering targets 106a-106f may be insulated from the shelf 134 and the beams 124a-124e by the insulator 140.

Each target 106a-106f can be coupled to a corresponding power supply 128a-128f so that each target 106a-106f can be powered individually. By providing separate power supplies 128a-128f to each target 106a-106f, the power level of each target 106a-106f can be individually controlled to achieve even deposition. The power supplies 128a-128f can be DC, AC, pulsing, RF, or a combination thereof. The device may be controlled by the controller 132. Exemplary power configurations are disclosed in US application Ser. No. 11 / 428,226, filed June 30, 2006, which is incorporated herein by reference.

The shelf 134 and beams 124a-124e containing the frame assembly can be grounded such that the frame assembly functions as an anode. In one embodiment, the frame assembly including shelves 134 and beams 124a-124e may comprise a single structure. Each beam 124a-124e has a corresponding female shield 126a-126e coupled. The dark shields 126a-126e protect the beams 124a-124e from undesired deposition and can be electrically coupled to the beams 124a-124e such that the dark shields 126a-126e will function as anodes. Can be. In one embodiment, the female shields 126a-126e may be made of the same material as the sputtering target. In other embodiments, the female shields 126a-126e can be made of stainless steel, bead blasted and the same material as the sputtering target or a frame sprayed with aluminum.

The dark shields 126a-126e can be exposed to the processing region 112, so there can be many variations in temperature between processing and downtime. To compensate for the temperature flow, the female shields 126a-126e can be cooled by the flow of cooling fluid through the cooling channel 138. The female shields 126a-126e can be removably coupled to the beams 124a-124e.

2 is a bottom view of a sputtering target assembly 200 according to one embodiment of the invention. A number of sputtering targets 204a-204f can be positioned over the sputtering target assembly 200 and placed within the frame assembly 202. The frame assembly 202 may include one or more beams 206. In one embodiment, the frame assembly 202 includes a single material component. Although six sputtering targets 204a-204f are shown, it should be noted that more or fewer sputtering targets 204a-204f may be used. Moreover, although sputtering targets 204a-204f are shown as sputtering target strips, other configurations may be employed in the present invention. For example, a sputtering target tile and a sputtering target tile coupled together to the sputtering target strip can be used. Exemplary sputtering target tiles coupled to form a sputtering target strip are disclosed in US Application No. 11 / 424,467, filed June 15, 2006 and US Application No. 11 / 424,468, filed June 15, 2006. , The present invention is referred to.

3 is a schematic perspective view of the frame assembly 300 according to an embodiment of the present invention. The frame assembly 300 can include one or more beams 304 extending between the outer frame portions 302. The sputtering target assembly 306 may be placed in the opening 308 in the frame assembly 300 on the shelf 310 placed on the beam 304 and the outer frame portion 302.

4 is a cross-sectional view of the beam assembly between adjacent target assemblies in accordance with one embodiment of the present invention. The target assembly includes sputtering targets 402a and 402b, respectively, which are coupled to the backing plates 404a and 404b by coupling layers 406a and 406b. The temperature of the backing plates 404a and 404b may be controlled by one or more cooling channels 408 in the backing plates 404a and 404b. The backing plate coating 410 is located at the bottom of the backing plates 404a and 404b to facilitate movement of the magnetron (not shown) across the bottoms of the backing plates 404a and 404b to insulate the magnetron.

Beam assembly 412 includes a beam body 426 coupled to the female shield 414. Clamp 428 is positioned to pass through beam body 426. The coupling mechanism 430 binds the clamp 428 to the beam body 426 and thus to the sputtering target assembly between the shelf 432 and the clamp 428 of the beam body 426. The sputtering target assembly can be insulated from the beam body 426 by the insulating member 424. The female shield 414 can be coupled to the beam assembly 412 using any conventional attachment means known in the art. Similarly, insulating member 424 can be coupled to beam assembly 412 using any conventional attachment means known in the art. The sealing member 416 may be located between the arm shield 414 and the beam body 426. An additional sealing member 418 can be located between the backing plates 404a and 404b and the beam assembly 412. As mentioned above, the beam assembly 412 can thus be grounded to the female shield 414 and thus perform an effective function as an anode.

The characteristic design of a multi-cathode PVD device allows the anode to be located outside of the processing space and thus contributes to plasma uniformity. For multiple sputtering target strips located across a common backing plate (of each sputtering target with its own backing plate), a space is located between adjacent sputtering targets. The space between the targets prevents arcing. Positioning as an anode in the space between adjacent targets is beneficial because the anode helps to reduce the arc. The location between the target assembly of the beam assembly 412 anode is beneficial because the beam assembly 412 does not block any visible path between the sputtering targets 402a, 402b and the substrate. By placing the beam assembly 412 adjacent to the targets 402a and 402b, any shadowing of the substrate as an anode can be reduced.

It may be necessary for the beam assembly 412 to extend within the processing space beyond the sputtering targets 402a, 402b. As the material of the sputtering targets 402a and 402b is sputtered, it can move in all directions. Thus, material sputtered from targets 402a and 402b may be deposited on beam assembly 412. Thus, the female shield 414 is coupled to the beam assembly 412. Any material sputtered from targets 402a and 402b may be deposited on female shield 414 rather than beam assembly 412. The female shield 414 is replaced and / or cleaned such that the beam assembly 412 is reused indefinitely. The female shield 414 can be released from the beam assembly 412 at any time if it needs to be replaced and / or cleaned. The female shield 414 is bent to reduce the amount of material that can be deposited on the female shield 414.

The temperature in the PVD device 400 may flow between the processing temperature and the downtime temperature. The processing temperature can be high to bring the chamber component to a "red hot". Downtime temperatures can be low to reach room temperature. As the temperature flows the female shield 414 can expand and contract. When the dark shield 414 expands and contracts, the material deposited on the dark shield 414 may peel off or contaminate the substrate. In addition, the processing temperature may approach or exceed the melting point of the sputtering material. If any sputtering material placed on the female shield 414 reaches the melting point of the sputtering material, the deposited material will peel off from the female shield 414 to contaminate the substrate. Controlling the temperature of the dark shield 414 is beneficial because the expansion and contraction of the dark shield 414 is reduced. Moreover, the temperature of the dark shield 414 is controlled to remain below the melting point of the sputtering material to reduce falling to the substrate.

There may be at least one cooling channel 420 within the beam body 426. Thus, the cooling channel 420 can be close to both the beam body 426 and the female shield 414. The cooling channel 420 may be a continuous channel flowing through the body 426 of the beam assembly 412 or may be a plurality of cooling channels 420. The cooling channel 420 is sealed by the sealing member 422 so that no cooling fluid enters the processing space and contaminates the substrate. The cooling fluid can be any conventional cooling fluid known in the art. In one embodiment, the cooling fluid is water. In another embodiment, the cooling fluid is gaseous.

5 is a cross sectional view of a beam assembly between adjacent target assemblies in accordance with another embodiment of the present invention. The cooling channel 520 may be located within the curved portion of the female shield 514 and surrounded by the cooling channel frame 530. Thus, the cooling channel 520 can be located near the beam body 526.

6 is a schematic perspective view of a female shield 600 according to one embodiment of the invention. In one embodiment, the female shield 600 is inflated so that one or more protrusions 602, 604 are located on a surface facing the processing space in the PVD chamber. The protrusions 602 and 604 can each be roughly square shaped protrusions 602, elongated rectangular shaped protrusions 604, or a combination thereof. Protrusions 602 and 604 on the female shield 600 provide a smaller surface on which sputtering material is deposited during sputtering. However, the swelled surface of the female shield 600 may be beneficial during any potential expansion and contraction of the female shield 600. During the temperature change, the protrusions 602 and 604 expand and contract rather than the dark shield 600. Thus, the protrusions 602 and 604 can reduce the amount of peeling that can occur. In one embodiment, the protrusion 602 has a surface area of about 25 square millimeters. Compared to simply roughening the surface by a process such as bead blasting, swelling provides a larger surface that allows a large amount of material to be deposited on the female shield 600 prior to replacement. helpful. Swelling may cause the female shield 600 to withstand about twice the length of the roughened female shield.

FIG. 7A is a perspective view of a protrusion 700 formed on the bulged surface of a female shield in accordance with one embodiment of the present invention. FIG. FIG. 7B is a cross-sectional view of the protrusion 700 of FIG. 7A. The protrusion 700 has an inclined surface 702 and a generally flat top surface 704. In one embodiment, the inclined surface 702 may be inclined at an angle of about 25 degrees or more.

Placing a cooled dark shield that functions as an anode between adjacent targets in a multi-cathode PVD system is desirable because shadows can be reduced and plasma uniformity can be enhanced. Cooling and swelling the dark shield can reduce peeling or dropping, thereby reducing substrate contamination.

While embodiments of the invention have been described, further embodiments of the invention will be possible without departing from the scope of the claims defined by the appended claims below.

The above-described features of the present invention will be understood in detail and will be described through embodiments for a more detailed description of the invention, which is illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only certain embodiments of the invention and are not intended to limit the scope of the invention, nor to the scope of equivalents thereof.

1 is a cross-sectional view of a PVD device 100 according to an embodiment of the present invention.

2 is a bottom view of a sputtering target assembly 200 according to one embodiment of the invention.

3 is a schematic perspective view of a plasma assembly 300 in accordance with one embodiment of the present invention.

4 is a cross-sectional view of the beam assembly between adjacent target assemblies in accordance with one embodiment of the present invention.

5 is a cross sectional view of a beam assembly between adjacent target assemblies in accordance with another embodiment of the present invention.

6 is a schematic perspective view of a female shield 600 according to an embodiment of the present invention.

FIG. 7A is a plan view of a protrusion 700 formed with the inflated surface of a female shield in accordance with one embodiment of the present invention.

FIG. 7B is a cross-sectional view of the protrusion 700 in FIG. 7A.

For ease of understanding, the same reference numerals are designated to the common members in the drawings. Components described in one embodiment may be used in other embodiments without particular reference.

Reference

100 instruments 102 susceptors

104 substrate 106a target

106b Target 106c Target

106d target 106e target

106f target 108a backing plate

108b backing plate 108c backing plate

108d backing plate 108e backing plate

108f backing plate 110 cooling channel

112 processing space 114 shield

116 Chamber Wall 118 Magnetron

120 Magnetron Chamber 122 Bonding Layer

124a beam 124b beam

124c beam 124d beam

124e beam 126a shield

126b shield 126c shield

126d shield 126e shield

128a power supply 128b power supply

128c power supply 128d power supply

128e power supply 128f power supply

130 Sealing member 132 Controller

134 Shelf 138 Cooling Channel

140 isolator

200 Target Assembly 202 Frame Assembly

204a target 204b target

204c target 204d target

204e target 204f target

206 beam

300 Frame assembly 302 Outer frame section

304 beam 306 target assembly

308 opening 310 shelf

400 device 402a target

402b target 404a backing plate

404b backing plate 406a bonding layer

406b bonding layer 408 cooling channel

410 Backing Plate Coating 412 Beam Assembly

414 shield 416 sealing member

418 Seal 420 Cooling Channel

422 sealing member 424 insulating member

426 beam body 428 clamp

430 coupling mechanism 432 shelves

514 Shield 520 Cooling Channel

526 beam body 530 cooling channel frame

600 shield assembly 602 protrusion

604 protrusion

700 Protrusions 702 Beveled Surface

704 top view

Claims (28)

A sputtering target support frame assembly, An edge portion surrounding the plurality of targets; One or more beams extending the length between adjacent targets and coupled with the edge portions; One or more dark space shields coupled with the one or more beams; And One or more cooling channels coupled with the one or more beams, Sputtering Target Support Frame Assembly. The method of claim 1, The at least one female shield is embossed, Sputtering Target Support Frame Assembly. The method of claim 2, The swelling one or more female shields comprises a plurality of protrusions extending from the one or more female shields, the protrusions having a plurality of surfaces curved relative to each other, Sputtering Target Support Frame Assembly. The method of claim 3, wherein The protrusions have a surface area of about 25 mm ² , Sputtering Target Support Frame Assembly. The method of claim 1, Further comprising one or more clamping mechanisms coupled with the one or more beams, Sputtering Target Support Frame Assembly. The method of claim 5, The one or more clamping mechanisms are arranged to pass through the one or more beams, Sputtering Target Support Frame Assembly. The method of claim 1, The female shield includes one or more grooves to lie within the one or more cooling channels, Sputtering Target Support Frame Assembly. The method of claim 1, The at least one beam comprises at least one groove to lie in the at least one cooling channel, Sputtering Target Support Frame Assembly. The method of claim 1, The edge and the one or more beams comprise a single material part, Sputtering Target Support Frame Assembly. The method of claim 1, The at least one female shield is removably coupled to the at least one beam, Sputtering Target Support Frame Assembly. As a sputtering device, Multiple sputtering targets; And A target support frame coupled between a pair of sputtering targets of the plurality of sputtering targets, the target support frame; One or more beams having a ledge to support the pair of sputtering targets; One or more cooling channels coupled with the one or more beams; And One or more clamping mechanisms coupled with the one or more beams, the pair of sputtering targets including one or more clamping mechanisms coupled between the one or more clamping mechanisms and the lathe, Sputtering equipment. The method of claim 11, Further comprising a female shield coupled with the at least one beam, Sputtering equipment. The method of claim 12, The dark shield has a swelling surface, Sputtering equipment. The method of claim 13, The swelled surface comprises a plurality of protrusions, each of the plurality of protrusions having a plurality of surfaces extending from the female shield and bent relative to one another; Sputtering equipment. The method of claim 14, The protrusions have a surface area of about 25 mm ² , Sputtering equipment. The method of claim 12, The arm shield is removably coupled to the at least one beam, Sputtering equipment. The method of claim 12, The female shield includes one or more grooves to lie within the one or more cooling channels, Sputtering equipment. The method of claim 12, The at least one beam comprises at least one groove to lie in the at least one cooling channel, Sputtering equipment. As a swollen dark shield, A shield body having one or more curved surfaces; And Including a plurality of protrusions extending from the shield body, Swollen Ambu Shield. The method of claim 19, The protrusions have a substantially flat surface and at least one inclined surface inclined with respect to the substantially flat surface, Swollen Ambu Shield. The method of claim 19, The at least one protrusion is disposed on the at least one curved surface, Swollen Ambu Shield. As the sputtering method, Coupling a sputtering target between the shelf of the support beam coupled to the female shield and the one or more clamping mechanisms; Providing a cooling channel adjacent said beam and said female shield; Flowing cooling fluid into the cooling channel; And Sputtering material from the sputtering target on a substrate, Sputtering method. The method of claim 22, Insulating the shelf from the sputtering target, Sputtering method. The method of claim 22, The female shield includes a swelled surface having a plurality of protrusions, each of the protrusions having a plurality of surfaces extending from the female shield, The sputtering method further comprises extending and contacting the plurality of protrusions, Sputtering method. The method of claim 22, Further comprising grounding the female shield; Sputtering method. The method of claim 22, The substrate has a surface area of at least one square meter, Sputtering method. The method of claim 22, The cooling channel is disposed in the beam, Sputtering method. The method of claim 22, The cooling channel is in contact with the female shield, Sputtering method.

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