CN105671500B - Cathode electrode unit - Google Patents
Cathode electrode unit Download PDFInfo
- Publication number
- CN105671500B CN105671500B CN201610219410.4A CN201610219410A CN105671500B CN 105671500 B CN105671500 B CN 105671500B CN 201610219410 A CN201610219410 A CN 201610219410A CN 105671500 B CN105671500 B CN 105671500B
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- China
- Prior art keywords
- backboard
- base material
- target
- interarea
- cathode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Abstract
The invention discloses a kind of cathode electrode unit, which is used for film formation device (200), including：Multiple targets (C1, C2, C3), setting is in film formation space (50), and there is backboard (204), the first base material (205), the second base material (206) and rotary shaft (207), there is the backboard the first interarea (204a), the second interarea (204b), first side (211) and second side (212), multiple rotary shafts (207) to be configured in the same plane in a manner of arranging in parallel to each other；Multiple control units (E1, E2, E3) make the rotary shaft (207) rotate, and apply the voltage for sputtering to the target (C1, C2, C3)；Multiple magnetic field generating units (H1, H2, H3), it is positioned close to the position on the surface far from the film formation space (50) of the backboard (204) so that in the specific distributed magnetic field of Surface Creation close to the film formation space (50) of the backboard (204).
Description
It is on November 21st, 2011 that the application, which is the applying date, and entitled cathode electrode unit, application No. is 201180069851.6
Application divisional application.
Technical field
The present invention relates to used cathode electrode units in a kind of film formation device using sputtering method.
The application claims priority on the basis of the Patent 2011-098427 proposed on April 26th, 2011, and
This quotes its content.
Background technology
In field of semiconductor devices or the field flat-panel monitor (FPD), as the device for forming various films, using splashing
Injection device.
In general sputter equipment, the cathode of sputtering is provided in chamber, in the chamber of decompression and mounted on the moon
The target of pole is spaced be arranged opposite to each other handled object as defined in being spaced apart.
Secondly, argon gas (inert gas) is imported into chamber, negative to target application by the state being grounded with handled object
Voltage and make its electric discharge, make through the argon particle that ionize from argon gas and the target collision of discharging.Moreover, passing through the particle for making to fly out from target
It is attached to handled object, to carry out film process.
Figure 10 A indicate an example (patent document 1) of the existing film formation device 700 using sputtering method.
Film formation device 700 has multiple cathodes 720.Figure 10 B are one indicated in multiple cathodes 720 shown in Figure 10 A
Enlarged cross-sectional view (patent document 2).
As shown in Figure 10 B, cathode 720 is by the target of sputtering, cathode body 710, cathode mounting flange 701a, insulation board
712, power feeding section E1 (E2, E3) and grounding parts G are constituted.
Target is made of backboard 704 and the base material 705 being configured on the interarea 704a of backboard, is set to the interior of chamber 701
Portion, and be mounted in cathode body 710 using more bolt members.
In the inside of backboard 704, be provided on the surface of base material 705 generate leakage magnetic flux magnetic field generating unit H1 (H2,
H3)。
In addition, the inside of backboard 704 be provided with to control the temperature of target by importing cooling water runner 708a and
Export the circulatory flow that the runner 708b of cooling water is constituted.
Cathode body 710 is arranged in the inside of chamber 701, and uses more bolt members, is mounted on via insulation board 712
On cathode mounting flange 711.Cathode mounting flange 711 is grounded.
Backboard 704 and cathode body 710 are formed with the opening for making base material 705 expose the indoor space of chamber (film formation space)
Earth shield 701a covering.
Earth shield 701a is set to inhibit the electric discharge in the part other than base material 705.Earth shield 701a mono-
As be mounted on chamber (wall portion) 701 using more bolt members with ground state.
According to the structure of existing film formation device 700.In a film formation space, using being arranged in the one side of a backboard
Base material, sputtered film (film formed using sputtering method) can be made to be formed uniformly on static in the mode opposed with base material
On handled object 702.In particular, even if handled object 702 have be equivalent to multiple base materials the gross area width in the case of,
Also sputtered film can be made to be formed uniformly on handled object 702.
However, in the existing film formation device 700 using sputtering method, the base material for the sputtering target that each cathode 720 has
An only type.That is, existing film formation device 700 has the structure for the film process for only carrying out the base material using a type.
Therefore, it in the case where being carried out continuously the film process of multiple types, needs using corresponding with the type of each film forming
Each chamber, it is necessary to multiple spaces of chamber can be arranged in setting.
In addition, per, needing to transport handled object to the chamber for carrying out following processing when done processing.Therefore, it produces
The transport of life handled object operates the required time and is discharged in chamber with by the indoor process of handled object carrying-in/carrying-out chamber
Gas operation (process) needed for time, to since one processing be accomplished to it is next processing time it is elongated.Its
As a result, the necessary time for film process shortens.
Patent document 1：WO2009/025258 bulletins
Patent document 2：Special open 2003-328119 bulletins
Invention content
The present invention considers such case and makes that its purpose is to provide a kind of cathode electrode units, form a film at one empty
Between in, can will be by the first sputtered film that the base material in the one side of a backboard is formed be arranged and by being arranged in backboard
The second sputtered film that base material on another side is formed, be formed uniformly on the width with the area for being equivalent to multiple base materials and
With on the static handled object of the mode opposed with base material.
The cathode electrode unit of one embodiment of the present invention is used for film formation device, which includes：Multiple targets, setting exist
In film formation space, and there is backboard, the first base material, the second base material and rotary shaft, the backboard has the first interarea, positioned at described
Second interarea of the opposite side of the first interarea, the of first side (side of side) and the opposite side positioned at the first side
Two side faces (side of the other side), the first base material configuration is on first interarea, and the second base material configuration is described
On second interarea, the rotary shaft penetrates through the backboard from the first side towards the second side, multiple rotary shafts with
The mode arranged in parallel to each other configures in the same face is flat；Multiple control units make the rotary shaft rotate, via the rotation
Axis to the target apply for sputtering voltage, and be correspondingly arranged respectively with multiple targets；Multiple magnetic field generating units, setting by
The position (the non-sputtered processing surface side of backboard) on the surface far from the film formation space of the nearly backboard so that in the backboard
Close to the film formation space the specific distributed magnetic field of Surface Creation.
Preferably, in the cathode electrode unit of one embodiment of the present invention, the first side and the second side with
The length direction of the backboard is vertical, and the shape of the first side and the second side is rectangle.
Preferably, in the cathode electrode unit of one embodiment of the present invention, each backboard has and the backboard
The parallel side of length direction, and have via insulating element configuration in the side and prevent plate.Furthermore it is preferred that mutual
It is adjacent described to prevent being provided with protrusion on plate.
Preferably, in the cathode electrode unit of one embodiment of the present invention, the first side and the second side with
The length direction of the backboard is vertical, and the shape of the first side and the second side is trapezoidal.
Preferably, in the cathode electrode unit of one embodiment of the present invention, the first side and the second side with
The length direction of the backboard is vertical, and the shape of the first side and the second side is parallelogram.
Preferably, in the cathode electrode unit of one embodiment of the present invention, each backboard has and the backboard
The parallel side of length direction, and the side be formed it is step-like.
Preferably, in the cathode electrode unit of one embodiment of the present invention, each backboard has and the backboard
The parallel side of length direction, and the side is formed corrugated.
Preferably, in the cathode electrode unit of one embodiment of the present invention, each backboard has and the backboard
The parallel side of length direction, and in the side to adjoin each other, the side of side has protrusion, the side of the other side
With recess portion.I.e., it is preferable that the side of side is formed convex, and the side of the other side is formed concavity.
Cathode electrode unit according to the present invention is made of multiple cathodes, can make the exposing film formation space in multiple cathodes
The total area (area in the sputter process face of total) of base material and the processed surface product of handled object are same degree.
Moreover, in each cathode, has the sputtering target for individually configuring base material in each face of two interareas of cathode.
In addition, each target has by penetrating through the rotary shaft of its side (to penetrate through backboard from first side towards second side
The rotary shaft that is arranged of mode) and the structure that can rotate.
In this configuration, by rotary target, to which in the same chamber, the interarea opposed with handled object can be changed
Interarea not opposed with handled object.
That is, the two sides of two interareas possessed by each target can be used as sputter process face, so as to will by with
The base material both sides set in two interareas are used for sputter process.
It therefore, can will be by the base material in a face (the first interarea) for a backboard be arranged in a film formation space
The second sputtered film that the first sputtered film and the base material by being arranged in the another side (the second interarea) of a backboard formed is formed,
It is formed on handled object evenly.In particular, can be formed uniformly on this first sputtered film and the second sputtered film has
It is equivalent to the width of the gross area of multiple base materials and on the handled object that is still configured in a manner of opposed with base material.
In addition, the film formation process by carrying out two types in a film formation space, makes with the film formation process to each type
It is compared with the prior art of respective film formation space, the space of the chamber needed in setting film formation process can be reduced.
In addition, after carrying out the first film process (film process of the first type), without by handled object to carrying out the
The film formation space of two film process (film process of second species) transports.For this purpose, not will produce as prior art, located
The transport for managing body operates the required time and with the indoor process discharge indoor gas of chamber of handled object carrying-in/carrying-out chamber
Operate the time needed for (process).
Therefore, it is possible to shorten the time since the film process of the first film process terminate to the second film process, and
Compared with the case where using the prior art time needed for film process can be arranged longer.
Description of the drawings
Figure 1A is the sectional view of the film formation device for the cathode electrode unit for having embodiments of the present invention.
Figure 1B is the stereogram of the cathode electrode unit for the embodiments of the present invention for being connected to control unit.
Fig. 2 is the figure for the cathode electrode unit for indicating embodiments of the present invention, is cutd open with perpendicular to the face of rotary shaft is corresponding
View.
Fig. 3 A are the sectional views of multiple targets involved by embodiments of the present invention.
Fig. 3 B are the sectional views of multiple targets involved by embodiments of the present invention.
Fig. 4 A are the definition graphs of the spinning movement of multiple targets involved by embodiments of the present invention.
Fig. 4 B are the definition graphs of the spinning movement of multiple targets involved by embodiments of the present invention.
Fig. 4 C are the definition graphs of the spinning movement of multiple targets involved by embodiments of the present invention.
Fig. 5 A are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 5 B are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 5 C are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 5 D are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 5 E are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 5 F are the process charts for the manufacturing method for indicating the target for embodiments of the present invention.
Fig. 6 is the figure for indicating the target involved by variation 1, be with perpendicular to the corresponding sectional view in the face of rotary shaft.
Fig. 7 A are the sectional views of multiple targets involved by embodiments of the present invention.
Fig. 7 B are the sectional views of multiple targets involved by variation 2.
Fig. 7 C are the sectional views of multiple targets involved by variation 3.
Fig. 8 A are the sectional views of multiple targets involved by embodiments of the present invention.
Fig. 8 B are the sectional views of the target involved by variation 4, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Fig. 8 C are the sectional views of the target involved by variation 5, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Fig. 8 D are the sectional views of the target involved by variation 6, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Fig. 9 A are the sectional views of multiple targets involved by variation 2.
Fig. 9 B are the sectional views of the target involved by variation 7, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Fig. 9 C are the sectional views of the target involved by variation 8, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Fig. 9 D are the sectional views of the target involved by variation 9, are that the expansion in the region between two targets for indicating adjoining is cutd open
View.
Figure 10 A are the sectional views for the film formation device for having the cathode electrode unit involved by the prior art.
Figure 10 B are the figures for indicating the cathode electrode unit involved by the prior art, are corresponding with the face perpendicular to length direction
Sectional view.
Specific implementation mode
In the following, based on suitable embodiment, it is described with reference to embodiments of the present invention.In addition, in the various figures, being
Each structure member is set as to the size for the degree that can be identified on attached drawing, suitably makes the size and ratio and reality of each structure member
Border is different.
(embodiment for having the film formation device of cathode electrode unit)
Figure 1A be the film formation device 200 to having the cathode electrode unit 220 involved by embodiments of the present invention structure into
The figure of row explanation.
Film formation device 200 is formed by cathode electrode unit 230 by chamber for sputtering 201 and multiple cathodes 220 and constitutes.
Exhaust apparatus (exhaust portion) P that will be vented in chamber 201 is attached in the wall portion of chamber 201.
Each cathode 220 has sputtering target C1, C2, C3, control unit E1, E2, the E3 being connect respectively with target C1, C2, C3
With magnetic field generating unit H1, H2, H3.
In addition, in figure 1A, the structure that will be provided with three targets indicates as an example, but the number of target is not limited to this
Embodiment.
Figure 1B is the stereogram of target C1, C2, C3 for expanding each cathode 220 for indicating to constitute Figure 1A respectively.
Each backboard 204 of target C1, C2, C3 are constituted, there is the rotary shaft 207 vertical with its length direction L, rotary shaft
207 penetrate through backboard 204 from first side 211 towards second side 212.
Each rotary shaft 207 is electrically connected with control unit E1, E2, E3, and control unit E1, E2, E3 can be used to make its rotation.
Moreover, the rotation of backboard 204 and each rotary shaft 207 links and rotates.
In order to realize that stable rotation, best rotary shaft 207 penetrate through the center of gravity of backboard 204.
Each control unit E1, E2, E3 have rotary driving part, power feeding section and cooling water circulation portion.Rotary driving part makes
The rotary shaft 207 that target C1, C2, C3 have rotates.Power feeding section applies target C1, C2, C3 the voltage (electric power) for sputtering.
The cooling water of temperature of the cooling water circulation portion to target C1, C2, C3 supply for controlling target C1, C2, C3, and arranged from target C1, C2, C3
Go out cooling water.
Each target C1, C2, C3 are configured in the platform (branch by processing substrate (handled object) 202 with support in chamber 201
Support platform) on 203 opposed positions.Supporting table 203 is grounded by grounding parts G.
Each target C1, C2, C3 by with even shape backboard 204, configuration in the first (sides interarea 204a of backboard 204
Interarea) the first base material in the second interarea 204b (other side interarea) of the first base material 205 and configuration constitute.
As the material for constituting each backboard 204, it is preferred to use the material with high electric conductivity, heat conductivity, low venting quality
Material mainly uses copper or stainless steel.In addition, the first interarea of all backboards 204 by formed it is conplane in a manner of configure, and
Second interarea of all backboards 204 by formed it is conplane in a manner of configure.Expose multiple base materials of film formation space 50 as a result,
Surface is generally aligned in the same plane.Here, the surface of the so-called base material for exposing film formation space 50 is that argon gas etc. is lazy when carrying out sputter process
The surface of property gas collisions.
As the first base material 205 and the second base material 206, formed using metal or insulator etc., on by processing substrate 202
Film material.
About the first base material 205 and the second base material 206 configured on the first interarea and the second interarea of all backboards 204
Type (type of material), the type of all base materials configured on the interarea as the backboard 204 in sputter process face is identical
(by unifying).In addition, as be described hereinafter, even if the base material for sputter process is caused to change by the rotation of rotary shaft 207, being configured
It is also identical in the type of all base materials of the interarea (sputter process face) of backboard 204.In addition, the first base material 205 and the second base material
206 can be made of identical material, can also be made of different materials.
Each magnetic field generating unit H1, H2, H3 are configured in as from the position that film formation space 50 (region sputtered) detaches
Position (non-sputtered processing surface side) setting, close to the surface of backboard 204 so that in the backboard 204 close to film formation space 50
The specific distributed magnetic field of Surface Creation.
In the following description, " the non-sputtered process face " of so-called backboard 204 is intended as the first interarea 204a or
Two interarea 204b are placed with the interarea for the base material (the first base material 205 or the second base material 206) for being not used for sputtering.
In addition, " the sputter process face " of so-called backboard 204 is intended as the first interarea 204a or the second interarea 204b, put
It is equipped with the base material (the first base material 205 or the second base material 206) for sputtering, and is configured in close to the position of film formation space 50
Interarea.
This " non-sputtered process face " and " sputter process face " switches with the rotation of backboard 204, in the first interarea
In the case that 204a is as non-sputtered process face, the second interarea 204b becomes sputter process face, is used as and splashes in the first interarea 204a
In the case of penetrating process face, the second interarea 204b becomes non-sputtered process face.
By a part for magnetic field generating unit H1, H2, H3 magnetic flux generated respectively from non-sputtered process face towards sputter process
Face penetrates through backboard 204, the base material (the first base material 205 in Fig. 1) configured on the sputter process face to leak into backboard 204
Surface.
In the region of flux leakage, since by plasma-convergence, base material, which is concentrated, to be sputtered, therefore can be carried out
Film forming under high speed.
In addition, each magnetic field generating unit H1, H2, H3 using the first base material 205 carry out sputter process in the case of, close
The position of second base material 206 and target C configured separates, and in the Surface Creation leakage magnetic flux of the first base material 205.
In addition, each magnetic field generating unit H1, H2, H3 using the second base material 206 carry out sputter process in the case of, close
The position of first base material 205 and target C configured separates, and in the Surface Creation leakage magnetic flux of the second base material 206.
When carrying out sputter process, each magnetic field generating unit H1, H2, H3 are advantageously positioned near the position of target C1, C2, C3, but
In order to make rotary target C1, C2, C3 rotate, not interfere its rotation, need between magnetic field generating unit H1, H2, H3 and backboard 204
It is spaced apart distance.
Here, each magnetic field generating unit H1, H2, H3 involved by embodiments of the present invention have keep out of the way driving portion H11,
H21、H31.The device for keeping out of the way the position of magnetic field generating unit H1, H2, H3 in order to control driving portion H11, H21, H31, usually by magnetic field
Generating unit H1, H2, H3 configuration is by the position of near target C1, C2, C3.In addition, when target C1, C2, C3 rotate, keep out of the way driving portion
H11, H21, H31 make magnetic field generating unit H1, H2, H3 retreat to the more lateral compared with the radius of turn of target C1, C2, C3.Target C1,
After the rotation of C2, C3 terminate, keeping out of the way driving portion H11, H21, H31 makes magnetic field generating unit H1, H2, H3 return to common position
(position, the inside compared with the radius of turn of target C1, C2, C3 of depending near target C1, C2, C3).
In addition, each magnetic field generating unit H1, H2, H3 involved by embodiments of the present invention, may be typically located at target C1,
The outside of the radius of turn of C2, C3.Can only in sputter process, keep out of the way driving portion H11, H21, H31 make magnetic field generating unit H1,
After H2, H3 are moved to by the position of near target C1, C2, C3, and sputter process terminates, keeping out of the way driving portion H11, H21, H31 makes
Magnetic field generating unit H1, H2, H3 return to common position.
In addition, each magnetic field generating unit H1, H2, H3 have wobble drive portion H12, H22, H32.Wobble drive portion H12, H22,
H32 makes magnetic field generating unit H1, H2, H3 be swung on the parallel directions interarea 204a, 204b relative to backboard 204.Separately
Outside, wobble drive portion H12, H22, H32 is in the direction vertical with the length direction L of target C1, C2, C3 and length with target C1, C2, C3
At least one party for spending the parallel directions direction L is upward, and magnetic field generating unit H is made to be swung.
According to the swing, the magnetic flux generated by magnetic field generating unit H1, H2, H3 can be made to uniformly leak to be configured in and lean on
The position in the sputter process face of nearly each target C1, C2, C3.
By equably generating leakage magnetic flux, the region of plasma-convergence is formed uniformly in the surface of base material.
Therefore, generated by sputter process and on base material surface erosion homogenization, so as to improve each target C1, C2,
The utilization ratio of C3.
Moreover, for by the surface of processing substrate 202, the film process for the uniformity being distributed in raising face can be carried out.
Fig. 2 is target C1, C2, the C3 for indicating to constitute each cathode 220 involved by embodiments of the present invention shown in Figure 1B
Figure, be with perpendicular to the corresponding sectional view in the face of its length direction L.
In the backboard 204 for constituting each target C1, C2, C3, it is formed with and is formed close to the position of the second interarea 204b and by flowing
The circulatory flow (first circulation runner and second circulation runner) that road 208a and 208b are constituted.Cooling water flows in circulatory flow
It is dynamic.
Cooling water is imported into, and be exported from the other side in runner 208a and 208b from side.By making cooling water exist
It is flowed in circulatory flow 208a and 208b, so as to inhibit the temperature of the first base material 205 and the second base material 206 in sputter process
Degree rises.
As shown in Figure 1B and Fig. 2, each rotary shaft 207 is connect with control unit E1, E2, E3 respectively.
The sputtering voltage being applied on each backboard 204, from control unit E1, E2, E3, via setting in each rotary shaft 207
Power supply circuit be supplied to backboard 204.
In addition, the cooling water of circulatory flow 208a and 208b is flowed through, from control unit E1, E2, E3, via setting in each rotation
The supply of cooling water in axis 207 and discharge pipeline, are supplied to circulatory flow.
In addition, as shown in Figure 1B, Fig. 2, it is provided on the side 213 parallel with the length direction L of backboard 204 and prevents plate
209。
Prevent that plate 209 is grounded, prevents the particle occurred in sputter process from moving into the side of backboard 204.
In addition, preventing being configured with insulating element 209a between plate 209 and backboard 204, insulating element 209a is prevented because splashing
The voltage that is supplied when penetrating and be damaged in preventing plate 209.
Fig. 3 A and Fig. 3 B be from the one end of rotary shaft 207 constitute Figure 1A cathode electrode unit 230 multiple target C (C1,
C2, C3) figure.
Target C forms a line in such a way that all rotary shafts 207 are mutually parallel.
As shown in Figure 3A, from the one end of rotary shaft 207, the target that adjoins each other prevents plate 209 close to configuration.It changes
Yan Zhi, in the target to adjoin each other, side prevents plate (first prevents plate) with (second prevents close to the plate of preventing of the other side
Plate) mode configure.Prevent the mutually opposed surface of plate both sides, has and prevent the shape that plate does not overlap each other.Specifically, exist
In the case of Fig. 3 A, it is arranged in the substantial middle region on the mutually opposed surface (outer surface for preventing plate 209) for preventing plate 209
There is protrusion (rake of convex), and the top of convex is close.According to the structure, prevent sputtering particle from passing through the target that adjoins each other
Between space, the phenomenon that around the opposite side of film formation space 50.
Therefore, it is possible to make each target rotate (reversion) with independent direction of rotation and rotary speed.
But in order to make the particle generated in sputter process be difficult to move into the space of non-sputtered processing surface side, target institute phase
Adjacent prevents that plate 209 approaches preferably in a manner of not interfering the rotation of each target.
As shown in Figure 3B, from the one end of rotary shaft 207, the target that adjoins each other prevents plate 209 close to configuration.It changes
Yan Zhi, in the target to adjoin each other, side prevents plate (first prevents plate) with (second prevents close to the plate of preventing of the other side
Plate) mode configure.Prevent the mutually opposed surface of plate both sides, has and prevent the shape that plate does not overlap each other.Specifically, exist
It is boundary with the center on the mutually opposed surface (outer surface for preventing plate 209) for preventing plate 209, one in the case of Fig. 3 B
The surface (surface of half) for preventing plate 209 of side is formed with flat part, the other side the surface for preventing plate 209 (half
Surface) it is formed with convex rake.There are two inclined surface for convex rake tool.One inclined surface is from flat part with precipitous angle
The face erected is spent, is the high-dipping face positioned at the center of target.Another inclined surface is to prevent from the top of convex rake direction
The low-angle dip face that the outside of plate 209 extends.In addition, preventing plate 209 mutually opposed, the high-dipping face to adjoin each other is to nibble
The mode of conjunction is close.According to the structure, prevents sputtering particle by the space between the target that adjoins each other, move into film formation space 50
Opposite side the phenomenon that.
Fig. 4 A to 4C are the figures of an example of the spinning movement of target shown in definition graph 3B.All rotary shafts 207 are with mutually flat
It goes and is included as configuration in conplane mode, multiple targets form a line.
First, as shown in Figure 4 A, the interarea configured with the first base material 205 of all backboards 204 is in the same plane, and
And towards same direction in sputter process face (not shown).
Secondly, as shown in Figure 4 B, each target is made to be rotated centered on rotary shaft 207.At this point, keeping a pair of adjacent target anti-each other
Direction rotates.In addition, each target is made to be rotated in such a way that the rotary speed of target is identical.
Moreover, as shown in Figure 4 C, all backboards 204 configured with 205 interarea of the first base material it is in the same plane, and
Towards same direction in the face opposite with sputter process face.
Cathode electrode unit involved by embodiments of the present invention is made of multiple cathodes, can make the sputtering in multiple cathodes
The amount to area and the processed surface product of handled object of process face are same degree.
Moreover, in each cathode, has the sputtering target for being individually configured base material in each face of two interareas of cathode.
In addition, each target (is carried on the back by the rotary shaft for penetrating through its side with being penetrated through from first side 211 towards second side 212
The rotary shaft 207 that the mode of plate 204 is arranged) and can rotate.
Using these structure, by making target rotate, in the same chamber, the interarea opposed with handled object can be changed
Interarea not opposed with handled object.
That is, the two sides of two interareas possessed by each target can be used as sputter process face, so as to will by with
The base material both sides set in two interareas are applied to sputter process.
It therefore, can will be by the base material shape on a surface (the first interarea) for a backboard be arranged in a chamber
At the second sputtered film for being formed of the first sputtered film and the base material by being arranged on another surface (the second interarea) of a backboard,
It is formed on handled object evenly.In particular, can be formed uniformly on this first sputtered film and the second sputtered film has
It is equivalent to the width of the gross area of multiple base materials, and in a manner of opposed with base material on the handled object of rest configuration.
In addition, the film formation process by carrying out two types in the same chamber, with the film formation process use to each type
The prior art of chamber respectively is compared, and the space of the setting required chamber of film formation process can be reduced.
In addition, after carrying out the first film process (film process of the first type), without by handled object to carrying out the
The chamber of two film process (film process of second species) transports.For this purpose, not will produce as prior art, handled object
Transport operation needed for time and with the indoor gas of chamber is discharged in the indoor process of handled object carrying-in/carrying-out chamber
Operate the time needed for (process).
Therefore, it is possible to shorten the time since the film process of the first film process terminate to the second film process, and
And the time needed for film process can be set longerly compared with the case where using the prior art.
In addition, in the structure of embodiments of the present invention, each magnetic field generating unit H1, H2, H3 are not located at backboard 204
It is interior, it is configured on the position detached with backboard 204.
Therefore, in each cathode 220, a magnetic field generating unit can be used only, given birth on the respective surface of two base materials
At leakage magnetic flux.
In addition, in the case where the second base material 206 and the first base material 205 are made of same material, with existing using only
The case where being configured at the base material of an interarea of backboard is compared, and the service life of each target can be extended.
Thereby, it is possible to reduce the replacement number of base material, and replacement with base material can be reduced and in the chamber 201 that generates
Bleeding (process depressurized from atmospheric pressure as vacuum for the pressure of chamber 201) number.
In addition, in the first base material 205 and the second base material 206 respectively by being formed in by the laminated film that formed on processing substrate
In the case that the material on lower layer and upper layer is constituted, a target is used only, it will be able to be carried out continuously film process twice.
Moreover, by carrying out continuous film process twice in the same chamber, the first base material 205 need not used
The process of the discharge chamber indoor gas carried out between film formation process and film formation process using the second base material 206 and by processing substrate
Transport etc. operation (process), the time needed for this operation (process) can be shortened.
(embodiment of the manufacturing method of target)
Using process chart shown in Fig. 5 A to Fig. 5 F, to having the progress of the manufacturing method of the target of the structure of the above embodiment
Explanation.
First, in the first step shown in Fig. 5 A, the first base material 205 is configured to the first interarea with backboard 204
204a is opposed, and the second base material 206 is configured to opposed with the second interarea 204b of backboard 204.
Secondly, in the second step shown in Fig. 5 B, make the first base material 205 and the back of the body using the first adhering part (not shown)
First interarea 204a engagements of plate 204.
More specifically, it is coated with the first adhering part in the first interarea 204a for forming the backboard 204 on joint surface, with melting point
Above temperature heating backboard 204 and the first adhering part, make it melt.
Moreover, the first base material 205 is configured on the first adhering part melted, between the first base material 205 and backboard 204
It is cooled to room temperature in the state of the first adhering part that clamping is melted.
As the first adhering part used in this process, preferably low melting point metal, such as use indium.
In the second step, state that backboard 204 is engaged in the condition of high temperature with the first base material 205, and remained engaged with
It is cooled to room temperature.
Moreover, with cooling, backboard 204 is compressed.
At this point, due to being only bonded to the first base material 205 in the first interarea 204a, backboard 204 is in the first interarea 204a
Compression ratio of the compression ratio from backboard 204 in the second interarea 204b it is different.
Therefore, backboard 204 generates the shape of bending with convex in the first interarea 204a or the second interarea 204b.
In figure 5B, indicate that backboard 204 generates the example of the bending of convex in the first interarea 204a, but according to composition backboard
204 and first base material 205 material combination, the bending of convex is generated in the second interarea 204b sometimes.
Secondly, in the third step shown in Fig. 5 C, the back of the body that the engagement by the first base material 205 and backboard 204 is bent
Plate 204 carries out shaping, becomes flat shape.
To backboard 204 carry out shaping method be not limited to specific method, in the present embodiment, using with life
At bending side in the opposite direction on pressure is applied to the second interarea 204b of backboard 204 and the method mechanically corrected.
Secondly, in the fourth step shown in Fig. 5 D, using the second adhering part (not shown), make the second base material 206 with
Second interarea 204b engagements of backboard 204.
More specifically, it is coated with the second adhering part in the second interarea 204b for forming the backboard 204 on joint surface, with melting point
Above temperature heating backboard 204 and the second adhering part, make it melt.
Moreover, the second base material 206 is configured on the second adhering part melted, between the second base material 206 and backboard 204
It is cooled to room temperature in the state of the second adhering part that clamping is melted.
As the second adhering part used in this process, preferably low melting point metal, such as use indium.
In the fourth step, state that backboard 204 and the second base material 206 are engaged in the condition of high temperature, and remained engaged with
It is cooled to room temperature.
Moreover, with cooling, backboard 204 is compressed.
At this point, due to being bonded to the first base material 205 in the first interarea 204a, the second base material is combined in the second interarea 204b
206, therefore backboard 204 is different in compression ratio of the compression ratio from backboard 204 in the second interarea 204b of the first interarea 204a.
Therefore, backboard 204 has the shape of the convex real estate life bending in the first interarea 204a or the second interarea 204b.
Here, in the 5th process shown in Fig. 5 E, the back of the body that the engagement by the second base material 206 and backboard 204 is bent
Plate 204 carries out shaping, becomes flat shape.
To backboard 204 carry out shaping method be not limited to specific method, in the present embodiment, using with life
At bending side in the opposite direction on pressure applied and the method mechanically corrected to backboard 204.
Moreover, in the 6th process shown in Fig. 5 F, in the side parallel with the length direction L of backboard 204, by using
Plate 209 is prevented in adhering part (insulating element) 209a engagements of insulating properties, forms the target of embodiments of the present invention.
Here, showing to backboard 204, by the example that the sequence of the first base material 205, the second base material 206 engages, but can make
The sequence of engagement is opposite.
According to the manufacturing method of the target of the embodiment of aforementioned present invention, without such as using bolt or fixture fixed component
The case where making base material be fixed on backboard, is such, and fixed area is arranged on base material.
Therefore, it is possible to make configuration in the first base material 205 of each interarea of backboard 204 and the whole region of the second base material 206
For sputtering.
In addition, in the manufacturing method of the target of embodiments of the present invention, make base material and backboard the first interarea 204a or
After second interarea 204b engagements, the backboard being bent by engagement is shaped as flat shape.
It is bonded to the base material that surface is flat shape respectively in each face of two interareas of backboard therefore, it is possible to manufacture
Target.
As a result, due to parallelly configuring base material with by processing substrate, the sputtering particle to fly out from base material can be made equal
It is attached to and is formed a film in the process face of processing substrate evenly.
In addition, in Fig. 5 A to Fig. 5 F, as example, show using adhering part, by the first base material 205 and the second base material
206 methods engaged with each interarea of backboard 204.As other examples, also have using component for fixing such as fixtures, by the first base material
205 and second base material 206 be fixed on backboard 204 each interarea method.
Using the component for fixing such as fixture, it not will produce due to the hot swollen of the first base material 205 and backboard
Bending caused by the coefficient of thermal expansion difference of swollen rate difference or the second base material 206 with backboard.
It therefore, there is no need to the process for being equivalent to above-mentioned the third step and the 5th process, can be manufactured with more simplified process
Target.
(variation 1)
Fig. 6 is the figure for the variation for indicating target, is from one figure in multiple target C from the one end of rotary shaft 607.
Backboard 204 relative to the above embodiment is formed by veneer, and the backboard 614 of variation 1 is by two plates (backboard)
Plywood is constituted made of 604 and 611 coincidences.
In the inside of backboard 614, it is provided with the position for being formed adjacent to the outmost first interarea 614a as backboard
And it flows circulatory flow 608a, the 608b for having cooling water and is formed adjacent to the outmost second interarea 614b's as backboard
Simultaneously flow circulatory flow 613a, the 613b for having cooling water in position.In figure 6, component same as the first embodiment uses phase
Same reference numeral, and its explanation is omitted or simplified.
In the structure of embodiments of the present invention, circulatory flow 608a, 608b of cooling water are formed in backboard 604
In the position close to any side of the first interarea 604a or the second interarea 604b.
In contrast, in the structure of variation 1, circulatory flow 608a, 608b of cooling water are formed in backboard 614
In the position close to the both sides of the first interarea 614a or the second interarea 614b.
Therefore, it according to the structure of variation 1, can obtain having the both sides of the first base material 605 and the second base material 612
There is the target of high refrigerating function.
In the variation 1 of target, in each face of outmost two interareas as backboard, configured with the mother for sputtering
Material.
Therefore, it is possible in chamber, using the first base material 605 for being configured in the first interarea 614a carry out sputter process it
Afterwards, target is inverted, sputter process is carried out using the second base material 612 for being configured in the second interarea 614b.
Therefore, in the case where the second base material 612 is made of material identical as the first base material 605, with existing using only
The case where being configured at the base material of an interarea of backboard is compared, and the service life of each target can be extended.
Thereby, it is possible to reduce the replacement number of base material, and can reduce with the discharge chamber indoor gas replaced and occurred
Operation (process) number.
In addition, the first base material 605 and each of the second base material 612 are freely formed in by the formation laminated film on processing substrate
In the case that the material on lower layer and upper layer is constituted, film process twice can be carried out continuously using only a target.
Moreover, by carrying out continuous film process twice in the same chamber, the first base material 605 need not used
The process of the discharge chamber indoor gas carried out between film formation process and film formation process using the second base material 612 and by processing substrate
Transport etc. operation (process), the time needed for this operation (process) can be shortened.
(variation of the manufacturing method of target)
An example to having the manufacturing method of the target of the structure of above-mentioned variation 1 illustrates.
First, in the first step, using the first adhering part, make the first interarea of the first base material 605 and backboard 604
604a is engaged.
More specifically, it is coated with the first adhering part in the first interarea 604a for forming the backboard 604 on joint surface, with melting point
Above temperature heating backboard 604 and the first adhering part, make it melt.
Moreover, the first base material 605 is configured on the first adhering part melted, between the first base material 605 and backboard 604
It is cooled to room temperature in the state of the first adhering part that clamping is melted.
As the first adhering part used in this process, preferably low melting point metal, such as use indium.
In the first step, state that backboard 604 is engaged in the condition of high temperature with the first base material 605, and remained engaged with
It is cooled to room temperature.
Moreover, with cooling, backboard 604 is compressed.
At this point, due to being only bonded to the first base material 605 in the first interarea 604a, backboard 604 is in the first interarea 604a
Compression ratio of the compression ratio from backboard 604 in the second interarea 604b it is different.
Therefore, backboard 604 has the shape of the convex real estate life bending in the first interarea 604a or the second interarea 604b.
Secondly, in the second step, the backboard 604 that is bent to the engagement by the first base material 605 and backboard 604 carries out whole
Shape becomes flat shape.
To backboard 604 carry out shaping method be not limited to specific method, in the present embodiment, using with life
At bending side in the opposite direction on pressure applied and the method mechanically corrected to backboard 604.
Secondly, in the third step, using the second adhering part, make the first interarea of the second base material 612 and backboard 611
611a is engaged.
More specifically, it is coated with the second adhering part in the first interarea 611a for forming the backboard 611 on joint surface, with melting point
Above temperature heating backboard 611 and the second adhering part, make it melt.
Moreover, configure the second base material 612 on the second adhering part melted, with the second base material 612 and backboard 611 it
Between the state of the second adhering part melted be clamped be cooled to room temperature.
As the second adhering part used in this process, preferably low melting point metal, such as use indium.
Secondly, in the fourth step, the backboard 611 that is bent to the engagement by backboard 611 and the second base material 612 carries out whole
Shape becomes flat shape.
To backboard 611 carry out shaping method be not limited to specific method, in this variation, using with generation
The side of bending in the opposite direction on pressure applied and the method mechanically corrected to backboard 611.
In the following, in the 5th process, for the second interarea 611b phases of the second interarea 604b and backboard 611 of backboard 604
It is right, so that backboard 604 and backboard 611 is engaged using adhering part.
In the following, in the 6th process, by the side parallel with the length direction L of backboard 614, using the viscous of insulating properties
Plate 609 is prevented in relay part (insulating element) 609a engagements, forms the variation 1 of target.
In addition, the first step to the second step and the third step to the fourth step can be carried out with reversed order, it can also be same
Shi Jinhang.
In addition, the variation of target is pre-formed backboard 614 by so that two plates 604 and 611 is overlapped, later with the present invention
Embodiment backboard 604 it is identical, can also be formed by using the manufacturing method of above-mentioned target.
According to the variation of the manufacturing method of above-mentioned target, without such as making base material fix using fixed components such as bolt or fixtures
It is such in the backboard the case where, fixed area is set on base material.
Therefore, it is possible to make configuration in the first base material 605 of each interarea of backboard 614 and the whole region of the second base material 612
For sputtering.
In addition, in the variation of the manufacturing method of target, the first interarea 614a in backboard or the second interarea 614b engagements
After base material, the backboard being bent by engagement is shaped as flat shape.
It is bonded to the base material that surface is flat shape respectively in each face of two interareas of backboard therefore, it is possible to manufacture
Target.
As a result, due to parallelly configuring base material with by processing substrate, the sputtering particle to fly out from base material can be made equal
It is attached to and is formed a film in the process face of processing substrate evenly.
(variation 2,3)
Fig. 7 A are the figures of multiple target C involved by first embodiment from the one end of rotary shaft 207.
Fig. 7 B are the figures of multiple target C involved by variation 2 from the one end of rotary shaft 207.
Fig. 7 C are the figures of multiple target C involved by variation 3 from the one end of rotary shaft 207.
In the first embodiment, the section vertical with each rotary shaft 207 of backboard of target is constituted is rectangle.
In contrast to this, in variation 2, the section (corresponding first vertical with the rotary shaft 207 for the backboard for constituting each target
The section of side 211 and the second side 212) it is trapezoidal.In addition, in variation 3, the rotation with the backboard for constituting each target
The vertical section of shaft 207 is parallelogram.
In multiple target C involved by variation 2 or variation 3, each backboard 304,404 has flat with its length direction
Capable side (side).In multiple backboards 304 and multiple backboards 404, overlapped with another side with the one side to adjoin each other
Mode, the side of backboard mutually covers.
That is, in variation 2 or variation 3, each backboard to adjoin each other prevents that plate functions as backboard.
Therefore, because not being happened on the side parallel with length direction of backboard, installation is as in the first embodiment
What is used prevents the operation of plate, therefore can simplify the method (process) for manufacturing each target.
(variation 4,5,6)
Fig. 8 A are the figures of multiple target C from the one end of rotary shaft 207.
Fig. 8 B to Fig. 8 D are the enlarged cross-sectional views of the region F1 between two targets for indicating the adjoining in Fig. 8 A.Shown in Fig. 8 B
Variation 4 be equivalent to first embodiment structure variation.Variation 5 shown in Fig. 8 C is equivalent to first embodiment
Structure variation.Variation 6 shown in Fig. 8 D is equivalent to the variation of the structure of first embodiment.
In the first embodiment, the side (side) parallel with length direction of each backboard is formed as plane
Shape.
In contrast, in the variation 4 shown in Fig. 8 B, the side parallel with length direction of each backboard is formed as platform
Scalariform.
In addition, in the variation 5 shown in Fig. 8 C, the side parallel with length direction of each backboard of corrugated is formed as
Corrugated.
In addition, in the variation 6 shown in Fig. 8 D, in the side of the backboard to adjoin each other extended parallel to length direction
In portion, it is formed with protrusion (side of side is formed convex) in the side of side, and it is (another in the other side to be formed with recess portion
The side of side is formed concavity).
In multiple target C involved by variation 4,5,6, each backboard 214,224,234 has flat with its length direction
The side (side) extended capablely.In multiple backboards 214, multiple backboards 224 and multiple backboards 234, with the back of the body to adjoin each other
The mode that the side side of plate is overlapped with other side side, the side of backboard mutually cover.
That is, in variation 4,5,6, each backboard to adjoin each other prevents that plate functions as backboard.
Therefore, it is not happened on the side parallel with length direction of backboard and installs as used in the first embodiment
Prevent the operation of plate, therefore the method (process) for manufacturing each target can be simplified.
Fig. 9 A are the figures of multiple target C from the one end of rotary shaft 307.
Fig. 9 B to Fig. 9 D are the enlarged cross-sectional views of the region F2 between two targets for indicating the adjoining in Fig. 9 A.Shown in Fig. 9 B
Variation 7 expression make the example that above-mentioned variation 2 further deforms.The expression of variation 8 shown in Fig. 9 C makes above-mentioned deformation
The example that example 2 further deforms.The expression of variation 9 shown in Fig. 9 D makes the example that above-mentioned variation 2 further deforms.
In variation 2, the side (side) parallel with length direction of each backboard is formed as planar.
In contrast, in the variation 7 shown in Fig. 9 B, the side parallel with length direction of each backboard is formed as platform
Scalariform.
In addition, in the variation 8 shown in Fig. 9 C, the side parallel with length direction of each backboard of corrugated is formed as
Corrugated.
In addition, in the variation 9 shown in Fig. 9 D, in the side of the backboard to adjoin each other extended parallel to length direction
In portion, it is formed with protrusion (side of side is formed convex) in the side of side, and it is (another in the other side to be formed with recess portion
The side of side is formed concavity).
In multiple target C involved by variation 7,8,9, each backboard 314,324,334 has flat with its length direction
The side (side) extended capablely.In multiple backboards 314, multiple backboards 324 and multiple backboards 334, with the back of the body to adjoin each other
The mode that the side side of plate is overlapped with other side side, the side of backboard mutually cover.
That is, in variation 7,8,9, each backboard to adjoin each other prevents that plate functions as backboard.
Therefore, because not being happened at the side installation parallel with length direction of backboard as used in the first embodiment
The operation for preventing plate, therefore the method (process) for manufacturing each target can be simplified.
Industrial availability
The present invention can be widely applied for through sputtering method the case where handled object carries out film formation process.
Symbol description
200 ... film formation devices, 204 ... backboards, 204a, 204b ... interarea, 205 ... first base materials, 206 ... second base materials,
207 ... rotary shafts, 209 ... prevent plate, 209a ... insulating elements, 209a, 230 ... cathode electrode units, C1, C2, C3 ... target, E1, E2,
E3 ... control units, the magnetic field H1, H2, H3 ... generating unit.
Claims (9)
1. a kind of cathode electrode unit for film formation device, which is characterized in that including：
Multiple targets are arranged in film formation space, and have backboard, the first base material and the second base material, and the backboard has the first master
Face, the second interarea of opposite side positioned at first interarea, first side and the opposite side positioned at the first side
Two side faces, the first base material configuration is on first interarea, and the second base material configuration is on second interarea；
Multiple control units make the multiple target rotate, to the target centered on the multiple target respectively possessed rotary shaft
Apply the voltage for sputtering, and is correspondingly arranged respectively with multiple targets；With
Multiple magnetic field generating units, are located at the outside of the target, and are positioned close to the separate film formation space of the backboard
Surface position so that in the backboard close to the Surface Creation specific distributed magnetic field of the film formation space,
The magnetic field generating unit, which has, keeps out of the way driving portion, when the target rotates described in keep out of the way driving portion and make the magnetic field generating unit
The more lateral compared with the radius of turn of the target is retreated to, it is described at the end of the rotation of the target to keep out of the way driving portion and make the magnetic
Field generating unit returns to the inside compared with the radius of turn of the target,
The rotary shaft is configured in the same plane in a manner of arranging in parallel to each other,
In the multiple target, negative direction rotates the adjacent target of a pair each other centered on the rotary shaft,
The magnetic field generating unit is configured when generating leakage magnetic flux on first base material close to the position of second base material
It sets, when generating leakage magnetic flux on second base material, configuration is close to the position of first base material.
2. cathode electrode unit according to claim 1, which is characterized in that
The first side and the second side are vertical with the length direction of the backboard, the first side and described second
The shape of side is rectangle.
3. cathode electrode unit according to claim 1 or 2, which is characterized in that
Each backboard has the side parallel with the length direction of the backboard,
Have via insulating element configuration in the side and prevents plate.
4. cathode electrode unit according to claim 3, which is characterized in that
Described prevent being provided with protrusion on plate what is adjoined each other.
5. cathode electrode unit according to claim 1, which is characterized in that
The first side and the second side are vertical with the length direction of the backboard, the first side and described second
The shape of side is trapezoidal.
6. cathode electrode unit according to claim 1, which is characterized in that
The first side and the second side are vertical with the length direction of the backboard, the first side and described second
The shape of side is parallelogram.
7. according to the cathode electrode unit described in claim 1,2,5, any one of 6, which is characterized in that
Each backboard has the side parallel with the length direction of the backboard,
The side is formed step-like.
8. according to the cathode electrode unit described in claim 1,2,5, any one of 6, which is characterized in that
Each backboard has the side parallel with the length direction of the backboard,
The side is formed corrugated.
9. according to the cathode electrode unit described in claim 1,2,5, any one of 6, which is characterized in that
Each backboard has the side parallel with the length direction of the backboard,
In the side to adjoin each other, there is protrusion, the side of the other side to have recess portion for the side of side.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011098427 | 2011-04-26 | ||
| JP2011-098427 | 2011-04-26 | ||
| CN201180069851.6A CN103459653B (en) | 2011-04-26 | 2011-11-21 | Cathode electrode unit |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180069851.6A Division CN103459653B (en) | 2011-04-26 | 2011-11-21 | Cathode electrode unit |
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| CN105671500A CN105671500A (en) | 2016-06-15 |
| CN105671500B true CN105671500B (en) | 2018-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610219410.4A Active CN105671500B (en) | 2011-04-26 | 2011-11-21 | Cathode electrode unit |
| CN201180069851.6A Active CN103459653B (en) | 2011-04-26 | 2011-11-21 | Cathode electrode unit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201180069851.6A Active CN103459653B (en) | 2011-04-26 | 2011-11-21 | Cathode electrode unit |
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| JP (2) | JP5869560B2 (en) |
| KR (3) | KR20170104160A (en) |
| CN (2) | CN105671500B (en) |
| TW (1) | TWI495745B (en) |
| WO (1) | WO2012147228A1 (en) |
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| WO2019004351A1 (en) | 2017-06-28 | 2019-01-03 | 株式会社アルバック | Sputtering device |
| KR102156038B1 (en) | 2017-06-29 | 2020-09-15 | 가부시키가이샤 아루박 | Film forming device |
| JP2019210517A (en) * | 2018-06-05 | 2019-12-12 | 株式会社アルバック | Sputtering apparatus and film deposition method |
| KR20210036064A (en) | 2019-09-25 | 2021-04-02 | 이현우 | Portable secondary battery |
| KR20220095642A (en) | 2020-12-30 | 2022-07-07 | 전찬희 | Auxiliary battery anklet |
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| KR20100044230A (en) | 2007-08-20 | 2010-04-29 | 가부시키가이샤 알박 | Sputtering method and sputtering apparatus |
| TWI518194B (en) * | 2007-08-20 | 2016-01-21 | Ulvac Inc | Sputtering method |
| WO2010038271A1 (en) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | Sputtering apparatus and thin film formation method |
| TW201038759A (en) * | 2009-04-30 | 2010-11-01 | Hon Hai Prec Ind Co Ltd | Magnetron sputtering apparatus |
-
2011
- 2011-11-21 WO PCT/JP2011/076759 patent/WO2012147228A1/en active Application Filing
- 2011-11-21 KR KR1020177024739A patent/KR20170104160A/en active Search and Examination
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|---|---|
| JP6069540B2 (en) | 2017-02-01 |
| KR20130133015A (en) | 2013-12-05 |
| CN103459653A (en) | 2013-12-18 |
| JP5869560B2 (en) | 2016-02-24 |
| WO2012147228A1 (en) | 2012-11-01 |
| KR20160008660A (en) | 2016-01-22 |
| KR20170104160A (en) | 2017-09-14 |
| TW201243076A (en) | 2012-11-01 |
| JP2016041855A (en) | 2016-03-31 |
| JPWO2012147228A1 (en) | 2014-07-28 |
| CN105671500A (en) | 2016-06-15 |
| CN103459653B (en) | 2016-05-04 |
| TWI495745B (en) | 2015-08-11 |
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