JPWO2012147228A1 - Cathode unit - Google Patents

Abstract

  The cathode unit (220) is used in the film forming apparatus (200) and has a first main surface (204a), a second main surface (204b), a first side surface (211), and a second side surface (212). It has a backing plate (204), a first base material (205), a second base material (206), and a rotation shaft (207), and the plurality of rotation shafts (207) are arranged in parallel to each other. A plurality of targets (C1, C2, C3) arranged in the same plane and provided in the film formation space (50) and the rotating shaft (207) are rotated, and the targets (C1, C2, C3) are rotated. ) And a plurality of controllers (E1, E2, E3) for applying a voltage used for sputtering, and a specific distributed magnetic field is generated on the surface of the backing plate (204) close to the film formation space (50). And the film formation space (50) It includes a plurality of magnetic field generation portion provided in a position close to the surface of the backing plate away al (204) and (H1, H2, H3).

Description

The present invention relates to a cathode unit used in a film forming apparatus using a sputtering method.
This application claims priority based on Japanese Patent Application No. 2011-098427 for which it applied on April 26, 2011, and uses the content here.

In the semiconductor device field or the flat panel display (FPD) field, a sputtering apparatus is used as an apparatus for forming various thin films.
In a general sputtering apparatus, a cathode for sputtering is provided in a chamber, and an object to be processed is arranged so as to face a target attached to the cathode at a predetermined interval in a decompressed chamber.
Next, Ar gas (inert gas) is introduced into the chamber, and a negative voltage is applied to the target while the object to be processed is connected to the ground, and Ar ions ionized from the Ar gas by the discharge are discharged. Collide with the target.
And the film-forming process is performed by making the particle which jumps out of a target adhere to a to-be-processed object.

FIG. 10A shows an example of a conventional film forming apparatus 700 using a sputtering method (Patent Document 1).
The film forming apparatus 700 includes a plurality of cathodes 720. FIG. 10B is an enlarged cross-sectional view showing one of the plurality of cathodes 720 shown in FIG. 10A (Patent Document 2).
As shown in FIG. 10B, the cathode 720 includes a sputtering target, a cathode body 710, a cathode mounting flange 701a, an insulating plate 712, a power supply unit E1 (E2, E3), and a grounding unit G. Is done.

The target is composed of a backing plate 704 and a base material 705 disposed on the main surface 704a of the backing plate, is provided inside the chamber 701, and is attached to the cathode body 710 using a plurality of bolt members.
Inside the backing plate 704, magnetic field generation units H1 (H2, H3) that generate leakage magnetic flux on the surface of the base material 705 are provided.
Further, inside the backing plate 704, there is provided a circulation channel composed of a channel 708a into which cooling water is introduced and a channel 708b into which cooling water is led out in order to control the temperature of the target.

The cathode body 710 is provided inside the chamber 701 and is attached to the cathode attachment flange 711 using a plurality of bolt members via an insulating plate 712. The cathode mounting flange 711 is grounded.
The backing plate 704 and the cathode body 710 are covered with a ground shield 701a in which an opening for exposing the base material 705 to a space (film formation space) in the chamber is formed.
The ground shield 701a is provided in order to suppress discharge in a portion other than the base material 705. The ground shield 701a is normally attached to the chamber (wall portion) 701 using a plurality of bolt members while being grounded.

  According to the configuration of the conventional film forming apparatus 700, on one object 702 that is stationary so as to face the base material using the base material provided on one surface of one backing plate in one film forming space. A sputtered film (film formed by sputtering) can be formed uniformly. In particular, even when the object to be processed 702 has a size corresponding to the total area of a large number of base materials, the sputtered film can be formed uniformly on the object to be processed 702.

However, in the conventional film forming apparatus 700 using the sputtering method, the base material of the sputtering target provided in each cathode 720 is only one type. That is, the conventional film forming apparatus 700 has a configuration in which only a film forming process using one kind of base material is performed.
Therefore, when performing a plurality of types of film forming processes continuously, it is necessary to use separate chambers corresponding to the types of film forming, and it is necessary to provide a plurality of spaces in which the chambers are installed.
In addition, every time processing is completed, it is necessary to transfer the object to be processed to a chamber for performing the next processing. Therefore, the time required for the work to transport the object to be processed and the time required for the work (process) to exhaust the gas in the chamber in accordance with the process of carrying the object in and out of the chamber occur. The time from the end of the process to the start of the next process becomes longer. As a result, the time required for the film forming process is shortened.

WO2009 / 025258 JP 2003-328119 A

  The present invention has been made in consideration of such circumstances, and in one film formation space, a first sputtered film formed by a base material provided on one surface of one backing plate, and one backing plate. The second sputtered film formed by the base material provided on the other surface has a width corresponding to the area of a large number of base materials and is placed on the target object that is stationary so as to face the base material. An object is to provide a cathode unit that can be formed uniformly.

  The cathode unit of one embodiment of the present invention is used in a film forming apparatus, and the cathode unit includes a first main surface, a second main surface located on the opposite side to the first main surface, and a first side surface (one of the first main surface). Side surface), and a backing plate having a second side surface (the other side surface) located on the opposite side of the first side surface, a first base material disposed on the first main surface, and a second main surface A second base material disposed, and a rotating shaft penetrating the backing plate from the first side surface toward the second side surface, wherein the plurality of rotating shafts are arranged in parallel to each other in the same plane. A plurality of targets provided in the film formation space and the rotation shaft are rotated, and a voltage used for sputtering is applied to the target via the rotation shaft, and each of the plurality of targets is supported. A plurality of control units provided to perform, Provided at a position (on the non-sputtering surface side of the backing plate) close to the surface of the backing plate away from the film forming space so that a specific distributed magnetic field is generated on the surface of the backing plate close to the film forming space. And a plurality of magnetic field generation units.

  In the cathode unit of one aspect of the present invention, the first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shapes of the first side surface and the second side surface are rectangular. Is preferred.

  In the cathode unit of one aspect of the present invention, each backing plate has a side portion parallel to the longitudinal direction of the backing plate, and an adhesion preventing plate is disposed on the side portion via an insulating member. It is preferable that Moreover, it is preferable that the said adhesion prevention board adjacent to each other is provided with the convex part.

  In the cathode unit of one aspect of the present invention, the first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shapes of the first side surface and the second side surface are trapezoids. Is preferred.

  In the cathode unit of one aspect of the present invention, the first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shape of the first side surface and the second side surface is a parallelogram. Preferably there is.

  In the cathode unit of one aspect of the present invention, each backing plate preferably has side portions parallel to the longitudinal direction of the backing plate, and the side portions are preferably formed in a stepped shape.

  In the cathode unit of one aspect of the present invention, it is preferable that each backing plate has a side portion parallel to the longitudinal direction of the backing plate, and the side portion is formed in a wave shape.

  In the cathode unit of one aspect of the present invention, each of the backing plates has side portions parallel to the longitudinal direction of the backing plate, and one of the side portions adjacent to each other has a convex portion. And the other side part preferably has a recess. That is, it is preferable that one side is formed in a convex shape and the other side is formed in a concave shape.

The cathode unit according to the present invention includes a plurality of cathodes, and the total area of the base material exposed to the film formation space in the plurality of cathodes (the total area of the sputtering surface) is defined as the area to be processed of the object to be processed. It can be the same level.
Each cathode includes a sputtering target in which a base material is individually arranged on each of the two main surfaces of the cathode.
Each target has a configuration that can be rotated by a rotation shaft that penetrates the side surface (a rotation shaft that is provided so as to penetrate the backing plate from the first side surface toward the second side surface). ing.
In such a configuration, by rotating the target, the main surface facing the object to be processed and the main surface not facing the object to be processed can be changed in the same chamber.
That is, both of the two main surfaces of each target can be used as the sputtering processing surface, and both of the base materials arranged on the two main surfaces can be applied to the sputtering processing.

  Therefore, in one film-forming space, the first sputtered film formed from the base material provided on one surface (first main surface) of one backing plate and the other surface (second main surface) of one backing plate. The second sputtered film formed of the base material provided on the substrate can be uniformly formed on the object to be processed. In particular, such a first sputtered film and a second sputtered film are uniformly formed on an object to be processed that has a width corresponding to the total area of a large number of base materials and is placed stationary so as to face the base material. Can be formed.

  In addition, by performing two types of film forming processes in one film forming space, a chamber necessary for the film forming process is installed, compared to the conventional technique using a separate film forming space for each type of film forming process. Space can be reduced.

In addition, after performing the first film formation process (first type film formation process), the object to be processed needs to be transported to the film formation space where the second film formation process (second type film formation process) is performed. Absent. Therefore, unlike the prior art, there is no time required for transporting the object to be processed, and the process of exhausting the gas in the chamber in accordance with the process of carrying the object in and out of the chamber Time required for (process) does not occur.
Therefore, it is possible to shorten the time from the end of the first film forming process to the start of the second film forming process, and the time required for the film forming process is shorter than that in the case of using the conventional technique. Can be long.

It is sectional drawing of the film-forming apparatus provided with the cathode unit of embodiment of this invention. It is a perspective view of the cathode unit of an embodiment of the present invention connected to a control part. It is a figure which shows the cathode unit of embodiment of this invention, Comprising: It is sectional drawing corresponding to a surface perpendicular | vertical to a rotating shaft. It is sectional drawing of the some target which concerns on embodiment of this invention. It is sectional drawing of the some target which concerns on embodiment of this invention. It is explanatory drawing of rotation operation | movement of the some target which concerns on embodiment of this invention. It is explanatory drawing of rotation operation | movement of the some target which concerns on embodiment of this invention. It is explanatory drawing of rotation operation | movement of the some target which concerns on embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is process drawing which shows the manufacturing method of the target used for embodiment of this invention. It is a figure which shows the target which concerns on the modification 1, Comprising: It is sectional drawing corresponding to a surface perpendicular | vertical to a rotating shaft. It is sectional drawing of the some target which concerns on embodiment of this invention. 10 is a cross-sectional view of a plurality of targets according to Modification 2. FIG. 10 is a cross-sectional view of a plurality of targets according to Modification 3. FIG. It is sectional drawing of the some target which concerns on embodiment of this invention. It is sectional drawing of the target which concerns on the modification 4, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. It is sectional drawing of the target which concerns on the modification 5, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. It is sectional drawing of the target which concerns on the modification 6, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. 10 is a cross-sectional view of a plurality of targets according to Modification 2. FIG. It is sectional drawing of the target which concerns on the modification 7, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. It is sectional drawing of the target which concerns on the modification 8, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. It is sectional drawing of the target which concerns on the modification 9, Comprising: It is an expanded sectional view which shows the area | region between two adjacent targets. It is sectional drawing of the film-forming apparatus provided with the cathode unit which concerns on a prior art. It is a figure which shows the cathode unit which concerns on a prior art, Comprising: It is sectional drawing corresponding to a surface perpendicular | vertical to a longitudinal direction.

  Hereinafter, based on a preferred embodiment, an embodiment of the present invention will be described with reference to the drawings. In each drawing, the dimensions and ratios of the components are appropriately changed from the actual ones in order to make the components large enough to be recognized on the drawings.

<Embodiment of film forming apparatus provided with cathode unit>
FIG. 1A is a diagram illustrating a configuration of a film forming apparatus 200 including a cathode unit 220 according to an embodiment of the present invention.
The film forming apparatus 200 includes a sputtering chamber 201 and a cathode unit 230 formed by a plurality of cathodes 220.
An exhaust device (exhaust portion) P for exhausting the inside of the chamber 201 is attached to the wall portion of the chamber 201.
Each cathode 220 includes sputtering targets C1, C2, and C3, control units E1, E2, and E3 connected to the targets C1, C2, and C3, respectively, and magnetic field generation units H1, H2, and H3.
In addition, in FIG. 1A, although the structure provided with three targets is shown as an example, the number of targets is not limited to this embodiment.

FIG. 1B is an enlarged perspective view of the targets C1, C2, and C3 constituting each cathode 220 in FIG. 1A.
Each of the backing plates 204 constituting the targets C1, C2, and C3 has a rotation shaft 207 perpendicular to the longitudinal direction L, and the rotation shaft 207 is directed from the first side surface 211 toward the second side surface 212. It penetrates.
Each of the rotating shafts 207 is electrically connected to the control units E1, E2, and E3, and can be rotated using the control units E1, E2, and E3.
Then, the backing plate 204 rotates in conjunction with the rotation of each rotating shaft 207.
In order to achieve stable rotation, it is desirable that the rotating shaft 207 penetrates the center of gravity of the backing plate 204.

Each of the control units E1, E2, E3 includes a rotation drive unit, a power supply unit, and a cooling water circulation unit. A rotation drive part rotates the rotating shaft 207 with which target C1, C2, C3 was equipped. The power supply unit applies a voltage (power) used for sputtering to the targets C1, C2, and C3. The cooling water circulation unit supplies the cooling water used for controlling the temperatures of the targets C1, C2, and C3 to the targets C1, C2, and C3, and discharges the cooling water from the targets C1, C2, and C3.
Each of the targets C 1, C 2, and C 3 is disposed at a position facing a table (support table) 203 that supports a substrate to be processed (object to be processed) 202 in the chamber 201. The support base 203 is grounded through the grounding part G.

  Each of the targets C1, C2, and C3 includes a backing plate 204 having a flat shape, a first base material 205 disposed on a first main surface 204a (one main surface) of the backing plate 204, and a second main surface 204b. It is comprised with the 2nd preform | base_material 206 arrange | positioned at (the other main surface).

  As a material constituting each backing plate 204, a material having high conductivity, thermal conductivity, and low gas releasing property is desirably used, and copper or stainless steel is mainly used. Further, the first main surfaces of all the backing plates 204 are arranged so as to form one surface, and the second main surfaces of all the backing plates 204 are arranged so as to form one surface. Accordingly, the surfaces of the plurality of base materials exposed in the film formation space 50 are positioned on the same surface. Here, the surface of the base material exposed in the film formation space 50 is a surface on which an inert gas such as Ar gas collides when the sputtering process is performed.

As the first base material 205 and the second base material 206, a material of a film formed on the substrate to be processed 202 such as a metal or an insulator is used.
The main surface of the backing plate 204, which is the sputtering treatment surface, for the types (material types) of the first base material 205 and the second base material 206 arranged on the first main surface and the second main surface of all the backing plates 204 The types of all base materials arranged in the same are the same (unified). Further, as will be described later, even if the base material used for the sputtering process is changed by the rotation of the rotating shaft 207, the types of all the base materials arranged on the main surface (sputtering process surface) of the backing plate 204 are the same. It is. The first base material 205 and the second base material 206 may be made of the same material or different materials.

Each of the magnetic field generation units H1, H2, and H3 is located away from the film formation space 50 (a region where sputtering is performed) so that a specific distributed magnetic field is generated on the surface of the backing plate 204 close to the film formation space 50. And, it is arranged at a position close to the surface of the backing plate 204 (non-sputtering processing surface side).
In the following description, the “non-sputtering surface” of the backing plate 204 is the first main surface 204a or the second main surface 204b and is a base material that is not used for sputtering (the first base material 205 or the second base surface 204b). This means the main surface on which the base material 206) is placed.
The “sputtering surface” of the backing plate 204 is the first main surface 204a or the second main surface 204b, and a base material (first base material 205 or second base material 206) used for sputtering is placed on the backing plate 204. It means a main surface that is placed at a position close to the film formation space 50.
Such “non-sputtering surface” and “sputtering surface” are switched as the backing plate 204 rotates. When the first main surface 204a is a non-sputtering surface, the second main surface 204b is sputtered. When the first main surface 204a is a processing surface and the first main surface 204a is a sputtering processing surface, the second main surface 204b is a non-sputtering processing surface.
Each of a part of the magnetic flux generated by the magnetic field generation units H1, H2, and H3 penetrates the backing plate 204 from the non-sputtering processing surface toward the sputtering processing surface, and is a mother disposed on the sputtering processing surface of the backing plate 204. It leaks to the surface of the material (first base material 205 in FIG. 1).
In the region where the magnetic flux leaks, the base material is sputtered in a concentrated manner by converging the plasma, so that the film can be formed at a high speed.

In addition, each of the magnetic field generation units H1, H2, and H3 is disposed so as to be close to the second base material 206 and separated from the target C when performing the sputtering process using the first base material 205. The leakage magnetic flux is generated on the surface of the first base material 205.
Further, each of the magnetic field generation units H1, H2, and H3 is disposed so as to be close to the first base material 205 and away from the target C when performing the sputtering process using the second base material 206. The leakage magnetic flux is generated on the surface of the second base material 205.

When performing the sputtering process, each of the magnetic field generation units H1, H2, and H3 is preferably disposed at a position close to the targets C1, C2, and C3. However, in order to rotate the targets C1, C2, and C3, It is necessary to provide a distance between the magnetic field generators H1, H2, H3 and the backing plate 204 so as not to prevent the rotation.
Therefore, each of the magnetic field generation units H1, H2, and H3 according to the embodiment of the present invention includes a retreat drive unit (H11, H21, and H31). The evacuation drive units (H11, H21, H31) are devices for controlling the positions of the magnetic field generation units H1, H2, H3. Normally, the magnetic field generation units H1, H2, H3 are placed at positions close to the targets C1, C2, C3. Arrange. Further, when the targets C1, C2, and C3 rotate, the retracting drive units (H11, H21, and H31) retract the magnetic field generating units H1, H2, and H3 outside the rotational radius of the targets C1, C2, and C3. Let The retreat drive unit (H11, H21, H31) moves the targets C1, C2, C3 to normal positions (positions close to the targets C1, C2, C3, targets C1, C2) after the rotation of the targets C1, C2, C3 is completed. , C3).

  Note that each of the magnetic field generation units H1, H2, and H3 according to the embodiment of the present invention may be normally positioned outside the rotation radius of the targets C1, C2, and C3. Only during the sputtering process, the retract drive unit (H11, H21, H31) moves the magnetic field generators H1, H2, H3 to positions close to the targets C1, C2, C3, and after the sputtering process is completed, the retract drive is performed. The units (H11, H21, H31) may return the magnetic field generation units H1, H2, H3 to the normal positions.

In addition, each of the magnetic field generation units H1, H2, and H3 includes a swing drive unit (H12, H22, and H32). The swing drive units (H12, H22, H32) swing the magnetic field generation units H1, H2, H3 in a direction parallel to the main surfaces (204a, 204b) of the backing plate 204. In addition, the swing drive unit (H12, H22, H32) is in at least one of a direction perpendicular to the longitudinal direction L of the targets C1, C2, C3 and a direction parallel to the longitudinal direction L of the targets C1, C2, C3. The magnetic field generator H is swung.
By this oscillation, the magnetic flux generated by the magnetic field generators H1, H2, and H3 can be evenly leaked to the surface of the base material disposed at a position close to the sputtering surface of each target C1, C2, and C3. it can.
By uniformly generating the leakage magnetic flux, a region where the plasma converges is uniformly formed on the surface of the base material.
Therefore, the erosion generated on the surface of the base material by the sputtering treatment is made uniform, and the utilization efficiency of each target C1, C2, C3 can be improved.
And the film-forming process which improved the uniformity of in-plane distribution can be performed with respect to the surface of the to-be-processed substrate 202. FIG.

FIG. 2 is a view showing the targets C1, C2, and C3 constituting each cathode 220 according to the embodiment of the present invention shown in FIG. 1B, and is a cross-sectional view corresponding to a plane perpendicular to the longitudinal direction L thereof.
In the backing plate 204 that constitutes each of the targets C1, C2, and C3, a circulation channel (a first circulation channel and a second circulation channel) that is formed at a position close to the second main surface 204b and configured by channels 208a and 208b. A circulation channel) is formed. Cooling water flows through the circulation channel.
The cooling water is introduced from one of the channels 208a and 208b and led out from the other. By causing the cooling water to flow through the circulation channels 208a and 208b, the temperature rise of the first base material 205 and the second base material 206 during the sputtering process can be suppressed.

As shown in FIGS. 1B and 2, each of the rotating shafts 207 is connected to the control units E1, E2, and E3.
The sputtering voltage applied to each backing plate 204 is supplied from the control units E1, E2, and E3 to the backing plate 204 via a power supply line provided in each rotating shaft 207.
In addition, the cooling water flowing through the circulation channels 208a and 208b is supplied to the circulation channel from the control units E1, E2, and E3 via the cooling water supply and discharge lines provided in the rotary shafts 207. The

Further, as shown in FIGS. 1B and 2, a deposition preventing plate 209 is provided on the side portion 213 parallel to the longitudinal direction L of the backing plate 204.
The deposition preventing plate 209 is grounded and prevents particles generated during the sputtering process from entering the side surface of the backing plate 204.
Further, an insulating member 209a is disposed between the deposition preventing plate 209 and the backing plate 204, and the insulating member 209a prevents the deposition preventing plate 109 from being damaged by a voltage supplied during sputtering.

3A and 3B are views of a plurality of targets C (C1, C2, C3) constituting the cathode unit 230 of FIG. 1A as viewed from one end side of the rotating shaft 207. FIG.
The targets C are arranged in a line so that all the rotation axes 207 are parallel to each other.

As shown in FIG. 3A, when viewed from one end side of the rotating shaft 207, the target adhesion preventing plates 209 adjacent to each other are arranged so as to approach each other. In other words, in the targets adjacent to each other, one of the deposition plates (first deposition plate) is disposed so as to approach the other deposition plate (second deposition plate). The surfaces where both of the adhesion preventing plates are opposed to each other have a shape in which the adhesion preventing plates do not overlap each other. Specifically, in the case of FIG. 3A, a convex portion (convex inclined portion) is provided in a substantially central region of the surfaces of the adhesion preventing plates 209 (outer surfaces of the adhesion preventing plates 209) facing each other. The top is approaching. With this structure, it is possible to prevent the sputtered particles from going around to the side opposite to the film formation space 50 through the space between the targets adjacent to each other.
Accordingly, each target can be rotated (reversed) in an individual rotation direction and rotation speed.
However, in order to make it difficult for the particles generated during the sputtering process to enter the space on the non-sputtering processing surface side, the adhesion prevention plates 209 adjacent to the targets are close to each other so as not to prevent the rotation of each target. It is desirable.

  As shown in FIG. 3B, when viewed from one end side of the rotating shaft 207, the adhesion preventing plates 209 of the targets adjacent to each other are arranged so as to approach each other. In other words, in the targets adjacent to each other, one of the deposition plates (first deposition plate) is disposed so as to approach the other deposition plate (second deposition plate). The surfaces where both of the adhesion preventing plates are opposed to each other have a shape in which the adhesion preventing plates do not overlap each other. Specifically, in the case of FIG. 3B, a flat portion is formed on the surface (half surface) of one of the deposition plates 209 with the center of the surfaces of the deposition plates 209 facing each other (the outer surface of the deposition plate 209) as a boundary. A convex inclined portion is formed on the surface (half surface) of the other deposition preventing plate 209. The convex inclined portion has two inclined surfaces. One inclined surface is a surface rising at a steep angle from the flat portion, and is a steeply inclined surface located at the center of the target. The other inclined surface is a gently inclined surface extending from the top of the convex inclined portion toward the outside of the deposition preventing plate 209. Moreover, in the adhesion prevention board 209 which mutually opposes, it has approached so that the mutually adjacent steeply inclined surface may mesh | engage. With this structure, it is possible to prevent the sputtered particles from going around to the side opposite to the film formation space 50 through the space between the targets adjacent to each other.

4A to 4C are diagrams illustrating an example of the rotation operation of the target illustrated in FIG. 3B. A plurality of targets are arranged in a line so that all the rotating shafts 207 are included so as to be arranged in parallel and on the same plane.
First, as shown in FIG. 4A, the main surfaces of all the backing plates 204 on which the first base material 205 is arranged are located on the same surface and face the same direction on the sputtering processing surface (not shown). ing.
Next, as shown in FIG. 4B, each target is rotated about the rotation axis 207. At this time, a pair of adjacent targets are rotated in opposite directions. Moreover, each target is rotated so that the rotation speed of the target becomes the same.
Then, as shown in FIG. 4C, the main surfaces of all the backing plates 204 on which the first base material 205 is disposed are located on the same surface and face the same direction on the surface opposite to the sputtering surface. ing.

The cathode unit according to the embodiment of the present invention is composed of a plurality of cathodes, and the total area of the sputtering treatment surfaces of the plurality of cathodes and the area to be processed of the object to be processed can be made comparable.
Each cathode includes a sputtering target in which a base material is individually arranged on each of the two main surfaces of the cathode.
In addition, each target can be rotated by a rotation shaft that penetrates the side surface (a rotation shaft 207 that is provided so as to penetrate the backing plate 204 from the first side surface 211 toward the second side surface 212).
By rotating the target using these configurations, the main surface facing the object to be processed and the main surface not facing the object to be processed can be changed in the same chamber.
That is, both of the two main surfaces of each target can be used as the sputtering processing surface, and both of the base materials arranged on the two main surfaces can be applied to the sputtering processing.

  Accordingly, in one chamber, the first sputtered film formed by the base material provided on one surface (first main surface) of one backing plate and the other surface (second main surface) of one backing plate. The second sputtered film formed from the provided base material can be uniformly formed on the object to be processed. In particular, such a first sputtered film and a second sputtered film are uniformly formed on an object to be processed that has a width corresponding to the total area of a large number of base materials and is placed stationary so as to face the base material. Can be formed.

  Further, by performing two types of film forming processes in the same chamber, the space for installing the chambers necessary for the film forming process is reduced as compared with the conventional technique using a separate chamber for each type of film forming process. be able to.

In addition, after the first film formation process (first type film formation process) is performed, it is not necessary to transfer the object to be processed to the chamber in which the second film formation process (second type film formation process) is performed. For this reason, as in the prior art, the time required for the transfer work of the object to be processed and the work (process) of exhausting the gas in the chamber with the process of carrying the object into and out of the chamber. No time is required.
Therefore, it is possible to shorten the time from the end of the first film forming process to the start of the second film forming process, and the time required for the film forming process is shorter than that in the case of using the conventional technique. Can be long.

Further, in the configuration of the embodiment of the present invention, each of the magnetic field generation units H1, H2, and H3 is not provided in the backing plate 204 but is disposed at a position separated from the backing plate 204.
Therefore, in each cathode 220, the leakage magnetic flux can be generated on the surfaces of the two base materials using only one magnetic field generation unit.

Further, when the second base material 206 and the first base material 205 are made of the same material, one target is used as compared with the case where the base material disposed only on one main surface of the backing plate is used as in the prior art. The per-use period can be extended.
As a result, the number of times of replacement of the base material can be reduced, and the number of exhaust operations in the chamber 201 (step of reducing the pressure of the chamber 201 from the atmospheric pressure to the vacuum) that occurs when the base material is replaced is reduced. be able to.

Further, when each of the first base material 205 and the second base material 206 is made of a material that forms a lower layer and an upper layer of a laminated film formed on the substrate to be processed 102, using only one target, Two film-forming processes can be performed continuously.
Then, by performing two successive film formation processes in the same chamber, the gas in the chamber is exhausted between the film formation process using the first base material 205 and the film formation process using the second base material 206. A process (process) such as a process and a transfer of a substrate to be processed becomes unnecessary, and the time required for such a process (process) can be shortened.

<Embodiment of target manufacturing method>
A method for manufacturing a target having the configuration of the above embodiment will be described with reference to process diagrams shown in FIGS. 5A to 5F.
First, in the first step shown in FIG. 5A, the first base material 205 is disposed so as to face the first main surface 204a of the backing plate 204, and the second base material 206 is placed on the second main surface 204b of the backing plate 204. Arrange to face each other.

Next, in the second step shown in FIG. 5B, the first base material 205 is joined to the first main surface 204a of the backing plate 204 using a first adhesive member (not shown).
More specifically, the first adhesive member is applied to the first main surface 204a of the backing plate 204 that forms the bonding surface, and the backing plate 204 and the first adhesive member are heated and melted at a temperature equal to or higher than the melting point.
Then, the first base material 205 is placed on the melted first adhesive member, and the first adhesive member melted between the first base material 205 and the backing plate 204 is cooled to room temperature.
The first adhesive member used in this step is preferably a low melting point metal, for example, indium.

In the second step, the backing plate 204 and the first base material 205 are joined in a high temperature state and cooled to room temperature in the joined state.
And the backing plate 204 is compressed with cooling.
At this time, since the first base material 205 is bonded only to the first main surface 204a, the compression rate of the backing plate 204 on the first main surface 204a and the compression rate of the backing plate 204 on the second main surface 204 are Different.
Therefore, the backing plate 204 has a shape in which the first main surface 204a or the second main surface 204b is warped in a convex shape.

  FIG. 5B shows an example in which the backing plate 204 has a convex warp on the first main surface 204a. However, depending on the combination of the materials constituting the backing plate 204 and the first base material 205, In some cases, a convex warp may occur on the two principal surfaces 204b.

Next, in the third step shown in FIG. 5C, the backing plate 204 warped by the joining of the first base material 205 and the backing plate 204 is shaped so as to have a flat shape.
Although the method of shaping the backing plate 204 is not limited to a specific method, in the present embodiment, pressure is applied to the second main surface 204b of the backing plate 204 in a direction opposite to the direction in which the warping occurs. Use mechanical correction methods.

Next, in the fourth step shown in FIG. 5D, the second base material 206 is joined to the second main surface 204b of the backing plate 204 using a second adhesive member (not shown).
More specifically, the second adhesive member is applied to the second main surface 204b of the backing plate 204 that forms the bonding surface, and the backing plate 204 and the second adhesive member are heated and melted at a temperature equal to or higher than the melting point.
Then, the second base material 206 is disposed on the melted second adhesive member, and is cooled to room temperature in a state where the melted second adhesive member is sandwiched between the second base material 206 and the backing plate 204.
The second adhesive member used in this step is preferably a low melting point metal, for example, indium.

In the fourth step, the backing plate 204 and the second base material 206 are bonded in a high temperature state and cooled to room temperature while being bonded.
And the backing plate 204 is compressed with cooling.
At this time, since the first base material 205 is joined to the first main surface 204a and the second base material 206 is joined to the second main surface 204b, the compression rate of the backing plate 204 on the first main surface 204a. And the compression rate of the backing plate 204 on the second main surface 204b is different.
Therefore, the backing plate 204 has a shape in which the first main surface 204a or the second main surface 204b is warped in a convex shape.

Therefore, in the fifth step shown in FIG. 5E, the backing plate 204 warped by the joining of the second base material 206 and the backing plate 204 is shaped so as to have a flat shape.
The method of shaping the backing plate 204 is not limited to a specific method, but in the present embodiment, a method of mechanically correcting the backing plate 204 by applying a pressure in a direction opposite to the direction in which the warping occurs. Is used.

  Then, in the sixth step shown in FIG. 5F, the adhesion preventing plate 209 is joined to the side surface parallel to the longitudinal direction L of the backing plate 204 by using an insulating adhesive member (insulating member) 209a. The target of the embodiment is formed.

  Here, an example in which the first base material 205 and the second base material 206 are joined in this order to the backing plate 204 has been shown, but the joining order may be reversed.

According to the target manufacturing method of the embodiment of the present invention, it is not necessary to provide a fixing region in the base material as in the case of fixing the base material to the backing plate using a fixing member such as a bolt or a clamp.
Therefore, the entire area of the first base material 205 and the second base material 206 arranged on the respective main surfaces of the backing plate 204 can be used for sputtering.

In the target manufacturing method according to the embodiment of the present invention, after the base material is bonded to the first main surface 204a or the second main surface 204b of the backing plate, the backing plate warped by the bonding becomes a flat shape. Shape as follows.
Therefore, a target in which a base material having a flat surface is bonded to each of the two main surfaces of the backing plate can be manufactured.
Accordingly, since the base material and the substrate to be processed are arranged in parallel, the sputtered particles popping out from the base material can be uniformly attached to the processing surface of the substrate to be processed to form a film.

  5A to 5F show an example of a method of bonding the first base material 205 and the second base material 206 to the respective main surfaces of the backing plate 204 using an adhesive member. As another example, there is a method of fixing the first base material 205 and the second base material 206 to each main surface of the backing plate 204 using a fixing member such as a clamp.

When a fixing member such as a clamp is used, there is no warping caused by a difference in thermal expansion coefficient between the first base material 205 and the backing plate or a difference in thermal expansion coefficient between the second base material 206 and the backing plate. .
Therefore, the steps corresponding to the third step and the fifth step are not necessary, and the target can be manufactured by a simplified process.

<Modification 1>
FIG. 6 is a view showing a modification of the target, and is a view of one of the plurality of targets C as viewed from one end side of the rotating shaft 607.
The backing plate 204 of the above embodiment is formed of a single plate, whereas the backing plate 614 of the first modification is formed of a plywood in which two plates (backing plates) 604 and 611 are overlapped.
Inside the backing plate 614, circulation channels 608a and 608b are formed at positions close to the first main surface 614a that is the outermost surface of the backing plate, and cooling water flows, and a second main surface that is the outermost surface of the backing plate. Circulating flow paths 613a and 613b are provided at positions close to the surface 614b and through which cooling water flows. In FIG. 6, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.

In the configuration of the embodiment of the present invention, the circulation channels 608a and 608b for the cooling water are formed in the backing plate 604 at positions close to either the first main surface 604a or the second main surface 604b.
On the other hand, in the configuration of the first modification, the circulation channels 608a and 608b for the cooling water are formed in the backing plate 614 at positions close to both the first main surface 214a and the second main surface 614b.
Therefore, according to the structure of the modification 1, the target which has a high cooling function with respect to both the 1st base material 605 and the 2nd base material 612 can be obtained.

In the first modification of the target, a base material used for sputtering is disposed on each of the two main surfaces which are the outermost surfaces of the backing plate.
Therefore, in the chamber, after performing the sputtering process using the first base material 605 disposed on the first main surface 614a, the target is reversed and the second base material 612 disposed on the second main surface 614b. Can be used for sputtering.

Therefore, when the second base material 612 is made of the same material as the first base material 605, one target is used as compared with the case where the base material disposed only on one main surface of the backing plate is used as in the prior art. The per-use period can be extended.
Thereby, the frequency | count of replacement | exchange of a base material can be reduced, and the frequency | count of the operation | work (process) which exhausts the gas in a chamber generated with replacement | exchange can be reduced.

Further, when each of the first base material 605 and the second base material 612 is made of a material that forms the lower layer and the upper layer of the laminated film formed on the substrate to be processed, only one target is used. Two film forming processes can be performed continuously.
Then, by performing two successive film forming processes in the same chamber, the gas in the chamber is exhausted between the film forming process using the first base material 605 and the film forming process using the second base material 612. A process (process) such as a process and a transfer of a substrate to be processed becomes unnecessary, and the time required for such a process (process) can be shortened.

<Modification of target manufacturing method>
An example of a method for manufacturing a target having the configuration of the first modification will be described.

First, in the first step, the first base material 605 is joined to the first main surface 604a of the backing plate 604 using the first adhesive member.
More specifically, the first adhesive member is applied to the first main surface 604a of the backing plate 604 that forms the bonding surface, and the backing plate 604 and the first adhesive member are heated and melted at a temperature equal to or higher than the melting point.
Then, the first base material 605 is disposed on the melted first adhesive member, and cooled to room temperature with the melted first adhesive member sandwiched between the first base material 605 and the backing plate 604.
The first adhesive member used in this step is preferably a low melting point metal, for example, indium.

In the first step, the backing plate 604 and the first base material 605 are joined in a high temperature state and cooled to room temperature while being joined.
And the backing plate 604 is compressed with cooling.
At this time, since the first base material 605 is bonded only to the first main surface 604a, the compression rate of the backing plate 604 on the first main surface 604a and the compression rate of the backing plate 604 on the second main surface 604b are Different.
Therefore, the backing plate 604 has a shape in which the first main surface 604a or the second main surface 604b is warped in a convex shape.

Next, in the second step, the backing plate 604 warped by the joining of the first base material 605 and the backing plate 604 is shaped so as to have a flat shape.
The method of shaping the backing plate 604 is not limited to a specific method, but in this modification, a method of mechanically correcting the backing plate 604 by applying pressure in a direction opposite to the direction in which the warping occurs. Is used.

Next, in the third step, the second base material 612 is joined to the first main surface 611a of the backing plate 611 using the second adhesive member.
More specifically, the second adhesive member is applied to the first main surface 611a of the backing plate 611 forming the bonding surface, and the backing plate 611 and the second adhesive member are heated and melted at a temperature equal to or higher than the melting point.
Then, the second base material 612 is disposed on the melted second adhesive member, and cooled to room temperature in a state where the melted second adhesive member is sandwiched between the second base material 612 and the backing plate 611.
The second adhesive member used in this step is preferably a low melting point metal, for example, indium.

Next, in the fourth step, the backing plate 611 warped by the joining of the backing plate 611 and the second base material 612 is shaped so as to have a flat shape.
The method of shaping the backing plate 611 is not limited to a specific method, but in this modification, a method of mechanically correcting the backing plate 611 by applying pressure in a direction opposite to the direction in which the warping occurs. Is used.

  Next, in the fifth step, the backing plate 604 and the backing plate 611 are joined using an adhesive member so that the second major surface 604b of the backing plate 604 and the second major surface 611b of the backing plate 611 face each other. .

  Next, in the sixth step, the adhesion modification plate 609 is joined to the side surface parallel to the longitudinal direction of the backing plate 614 using the insulating adhesive member (insulating member) 609a, whereby the target modification 1 is obtained. It is formed.

  In addition, a 1st process-a 2nd process and a 3rd process-a 4th process may be performed by changing order, and may be performed simultaneously.

  Further, in the modification of the target, the backing plate 614 is formed in advance by superimposing the two plates 604 and 611, and then the target manufacturing method described above is performed in the same manner as the backing plate 604 in the embodiment of the present invention. It is also formed by using.

According to the modification of the target manufacturing method, it is not necessary to provide a fixing region in the base material as in the case where the base material is fixed to the backing plate using a fixing member such as a bolt or a clamp.
Accordingly, the entire region of the first base material 605 and the second base material 612 disposed on the respective main surfaces of the backing plate 614 can be used for sputtering.

In a modification of the target manufacturing method, after the base material is bonded to the first main surface 614a or the second main surface 614b of the backing plate, the backing plate warped by the bonding is shaped so as to have a flat shape. To do.
Therefore, a target in which a base material having a flat surface is bonded to each of the two main surfaces of the backing plate can be manufactured.
Accordingly, since the base material and the substrate to be processed are arranged in parallel, the sputtered particles popping out from the base material can be uniformly attached to the processing surface of the substrate to be processed to form a film.

<Modifications 2 and 3>
FIG. 7A is a view of the plurality of targets C according to the first embodiment as viewed from one end side of the rotation shaft 207.
FIG. 7B is a view of a plurality of targets C according to Modification 2 as viewed from one end side of the rotation shaft 207.
FIG. 7C is a view of a plurality of targets C according to Modification 3 as viewed from one end side of the rotation shaft 207.
In 1st embodiment, the cross section perpendicular | vertical to the rotating shaft 207 of the backing plate which comprises each target is a rectangle.
On the other hand, in Modification 2, the cross section (cross section corresponding to the first side surface 211 and the second side surface 212) perpendicular to the rotation axis 207 of the backing plate constituting each target is a trapezoid. Moreover, in the modification 3, the cross section perpendicular | vertical to the rotating shaft 207 of the backing plate which comprises each target is a parallelogram.

In the plurality of targets C according to Modification 2 or Modification 3, each of the backing plates 304 and 404 has a side surface (side portion) parallel to the longitudinal direction. In the plurality of backing plates 304 and the plurality of backing plates 404, the side surfaces of the backing plates are covered with each other so that one side surface and the other side surface of the backing plates adjacent to each other overlap.
That is, in Modification 2 or Modification 3, each of the backing plates adjacent to each other functions as an adhesion preventing plate for the backing plate.
Therefore, since the operation | work which attaches the adhesion prevention board used in 1st embodiment to the side surface parallel to the longitudinal direction of a backing plate does not generate | occur | produce, the method (process) which manufactures each target can be simplified. .

<Modifications 4, 5, 6>
FIG. 8A is a view of a plurality of targets C as viewed from one end side of the rotation shaft 207.
8B to 8D are enlarged cross-sectional views showing a region F1 between two adjacent targets in FIG. 8A. Modification 4 shown in FIG. 8B corresponds to a modification of the structure of the first embodiment. Modification 5 shown in FIG. 8C corresponds to a modification of the structure of the first embodiment. Modification 6 shown in FIG. 8D corresponds to a modification of the structure of the first embodiment.
In 1st embodiment, the side part (side surface) parallel to the longitudinal direction of each said backing plate is formed in planar shape.
On the other hand, in the modification 4 shown to FIG. 8B, the side part parallel to the longitudinal direction of each backing plate is formed in step shape.
Moreover, in the modification 5 shown to FIG. 8C, the side part parallel to the longitudinal direction of each backing plate is formed in the waveform.
Moreover, in the modified example 6 shown to FIG. 8D, a convex part is formed in one side part among the side parts extended in parallel with the longitudinal direction of a mutually adjacent backing plate (one side part is convex). Formed), and a recess is formed on the other side (the other side is formed in a concave shape).

In the plurality of targets C according to Modifications 4, 5, and 6, each of the backing plates 214, 224, and 234 has a side surface (side portion) that extends parallel to the longitudinal direction. In the plurality of backing plates 214, the plurality of backing plates 224, and the plurality of backing plates 234, the side surfaces of the backing plates are covered with each other so that one side surface and the other side surface of the adjacent backing plates overlap each other.
That is, in the modified examples 4, 5, and 6, each backing plate adjacent to each other functions as an adhesion preventing plate for the backing plate.
Therefore, since the operation | work which attaches the adhesion prevention board used in 1st embodiment to the side surface parallel to the longitudinal direction of a backing plate does not generate | occur | produce, the method (process) which manufactures each target can be simplified. .

FIG. 9A is a view of a plurality of targets C as viewed from one end side of the rotation shaft 307.
9B to 9D are enlarged sectional views showing a region F2 between two adjacent targets in FIG. 9A. Modification 7 shown in FIG. 9B shows an example in which Modification 2 described above is further modified. Modification 8 shown in FIG. 9C shows an example in which Modification 2 described above is further modified. The modified example 9 shown in FIG. 9D shows an example in which the modified example 2 described above is further modified.
In the modification 2, the side part (side surface) parallel to the longitudinal direction of each backing plate is formed in a planar shape.
On the other hand, in the modification 7 shown to FIG. 9B, the side part parallel to the longitudinal direction of each backing plate is formed in step shape.
Moreover, in the modification 8 shown to FIG. 9C, the side part parallel to the longitudinal direction of each backing plate is formed in the waveform.
Moreover, in the modification 9 shown to FIG. 9D, a convex part is formed in one side part among the side parts extended in parallel with the longitudinal direction of a mutually adjacent backing plate (one side part is convex). Formed), and a recess is formed on the other side (the other side is formed in a concave shape).

In the plurality of targets C according to Modifications 7, 8, and 9, each backing plate 314, 324, 334 has a side surface (side portion) that extends in parallel to the longitudinal direction thereof. In the plurality of backing plates 314, the plurality of backing plates 324, and the plurality of backing plates 334, the side surfaces of the backing plates are covered with each other so that one side surface and the other side surface of the adjacent backing plates overlap each other.
That is, in the modified examples 7, 8, and 9, each backing plate adjacent to each other functions as an adhesion preventing plate for the backing plate.
Therefore, since the operation | work which attaches the adhesion prevention board used in 1st embodiment to the side surface parallel to the longitudinal direction of a backing plate does not generate | occur | produce, the method (process) which manufactures each target can be simplified. .

  The present invention can be widely applied to a case where a film formation process by a sputtering method is performed on an object to be processed.

  DESCRIPTION OF SYMBOLS 200 ... Film-forming apparatus, 204 ... Backing plate, 204a, 204b ... Main surface, 205 ... First base material, 206 ... Second base material, 207 ... Rotating shaft, 209 ... Anti-adhesion plate, 209a ... Insulating member ... 209a, 230 ... Cathode unit, C1, C2, C3 ... Target, E1, E2, E3 ... Control part, H1, H2, H3: Magnetic field generator.

Claims (9)

A cathode unit used in a film forming apparatus,
A backing plate having a first main surface, a second main surface located on the opposite side of the first main surface, a first side surface, and a second side surface located on the opposite side of the first side surface; A first base material disposed on the main surface; a second base material disposed on the second main surface; and a rotating shaft penetrating the backing plate from the first side surface toward the second side surface. The plurality of rotation axes are arranged in the same plane so as to be parallel to each other, and a plurality of targets provided in the film formation space;
A plurality of control units provided to correspond to each of a plurality of targets by rotating the rotating shaft, applying a voltage used for sputtering to the target via the rotating shaft;
A plurality of magnetic field generation units provided at positions close to the surface of the backing plate away from the film formation space so that a specific distributed magnetic field is generated on the surface of the backing plate close to the film formation space. A cathode unit characterized by that. The cathode unit according to claim 1,
The cathode unit, wherein the first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shape of the first side surface and the second side surface is a rectangle. The cathode unit according to claim 1 or 2,
Each backing plate has sides parallel to the longitudinal direction of the backing plate;
A cathode unit, wherein an adhesion preventing plate is disposed on the side portion via an insulating member. The cathode unit according to claim 3, wherein
The cathode unit, wherein the adhering plates adjacent to each other are provided with convex portions. The cathode unit according to claim 1,
The first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shape of the first side surface and the second side surface is a trapezoid. The cathode unit according to claim 1,
The cathode unit, wherein the first side surface and the second side surface are perpendicular to the longitudinal direction of the backing plate, and the shape of the first side surface and the second side surface is a parallelogram. The cathode unit according to any one of claims 1, 2, 5, and 6,
Each backing plate has sides parallel to the longitudinal direction of the backing plate;
The side part is formed in a staircase shape. The cathode unit according to any one of claims 1, 2, 5, and 6,
Each backing plate has sides parallel to the longitudinal direction of the backing plate;
The said side part is formed in the wave shape. The cathode unit characterized by the above-mentioned. The cathode unit according to any one of claims 1, 2, 5, and 6,
Each backing plate has sides parallel to the longitudinal direction of the backing plate;
Among the side portions adjacent to each other, one side portion has a convex portion, and the other side portion has a concave portion.

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