TWI495745B - Cathode unit - Google Patents

Description

Cathode unit

The present invention relates to a cathode unit used in a film forming apparatus using a sputtering method.

In the field of semiconductor elements or in the field of flat panel displays (FPD), as a device for forming various thin films, a sputtering device is used.

In a general sputtering apparatus, a cathode for sputtering is provided in a chamber, and a target object is disposed to face the target attached to the cathode at a predetermined interval in a chamber having a reduced pressure.

Then, Ar gas (inert gas) is introduced into the chamber, and a negative voltage is applied to the target in a state where the object to be processed is grounded, thereby discharging the Ar ion, thereby causing the Ar ion ionized from the Ar gas to collide to Target.

Next, the particles flying out from the target are attached to the object to be processed, thereby performing a film formation process.

Fig. 10A shows an example of a conventional film forming apparatus 700 by sputtering (WO 2009/025258).

Film forming apparatus 700 includes a plurality of cathodes 720. Fig. 10B is an enlarged cross-sectional view showing one of the plurality of cathodes 720 shown in Fig. 10A (Japanese Laid-Open Patent Publication No. 2003-328119).

As shown in FIG. 10B, the cathode 720 is composed of a target for sputtering, a cathode body 710, a cathode mounting flange 701a, an insulating plate 712, power supply portions E1 (E2, E3), and a ground portion G.

The target is composed of a backing plate 704 and a base material 705 disposed on the main surface 704a of the backing plate, and is disposed inside the chamber 701 and attached to the cathode body 710 using a plurality of bolt members.

Inside the backing plate 704, a magnetic field generating portion H1 (H2, H3) for forming a leakage magnetic flux on the surface of the base material 705 is provided.

Further, inside the backing plate 704, in order to control the temperature of the target, a circulation flow path including a flow path 708a for introducing cooling water and a flow path 708b for guiding cooling water is provided.

The cathode body 710 is disposed inside the chamber 701, and is mounted to the cathode mounting flange 711 by using a plurality of bolt members to isolate the edge plate 712. The cathode mounting flange 711 is grounded.

The backing plate 704 and the cathode body 710 are covered by a grounding baffle 701a formed with an opening through which the base material 705 is exposed in a space (film forming space) in the chamber.

The grounding baffle 701a is provided to suppress discharge of a portion other than the base material 705. The grounding baffle 701a is usually attached to the chamber (wall portion) 701 using a plurality of bolt members in a grounded state.

According to the configuration of the film forming apparatus 700 of the prior art, in the film forming space, the base material provided on one surface of one of the back sheets can be uniformly formed on the object to be processed 702 which is stationary toward the base material. Coating (film formed by sputtering). In particular, even if the object to be processed 702 has a width corresponding to the total area of the plurality of base materials, the sputtering film can be uniformly formed on the object to be processed 702.

However, in the film forming apparatus 700 of the prior art by the sputtering method, the base material of the sputtering target included in each cathode 720 is only one type. That is, the conventional film forming apparatus 700 has a configuration in which only a film forming process using one base material is performed.

Therefore, in the case where a plurality of types of film formation processes are continuously performed, it is necessary to use respective chambers corresponding to various types of film formation, and it is necessary to provide a plurality of spaces in which the chambers are provided.

Further, each time the processing is completed, it is necessary to transport the object to be processed to the chamber in which the subsequent processing is performed. Therefore, the time required for the conveyance operation of the object to be processed and the time required for the operation (step) of exhausting the gas in the chamber with the step of loading or unloading the object to be processed into the chamber, thereby The time from the completion of the processing to the start of the subsequent processing becomes longer. As a result, the time required for the film formation process is shortened.

The present invention has been made in view of such circumstances, and an object thereof is to provide a cathode unit which can be stationary in a film forming space with a width corresponding to the area of a plurality of base materials and in a manner opposed to the base material. On the object to be processed, a first sputter film formed of a base material provided on one surface of one back sheet and a second sputter film formed of a base material provided on the other side of one back sheet are uniformly formed.

A cathode unit according to an aspect of the present invention is used in a film forming apparatus, and includes: a plurality of targets disposed in a film forming space, and comprising: a backing plate having a first main surface, located at a second main surface on the opposite side of the main surface, a first side surface (one side surface), and a second side surface (the other side surface) on the side opposite to the first side surface; the first base material is disposed on the above a first main surface; the second base material is disposed on the second main surface; and a rotating shaft penetrating the back plate from the first side surface toward the second side surface, and the plurality of rotating shafts are parallel to each other Arranged in the same plane; the plurality of control units rotate the rotating shaft, apply a voltage for sputtering to the target via the rotating shaft, and correspond to each of the plurality of targets And a plurality of magnetic field generating portions disposed on a surface close to the backing plate separated from the film forming space by a specific magnetic field distribution on a surface of the backing plate adjacent to the film forming space The location.

Preferably, in the cathode unit according to one aspect of the invention, the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a rectangular shape.

Preferably, in the cathode unit according to an aspect of the present invention, each of the back sheets has a side portion parallel to the longitudinal direction of the back sheet, and the side plate portion is provided with an anti-sliding plate on the side portion. Further, convex portions are provided on the above-described prevention plates adjacent to each other.

Preferably, in the cathode unit according to one aspect of the invention, the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a trapezoidal shape.

Preferably, in the cathode unit according to one aspect of the invention, the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a parallelogram shape.

Preferably, in the cathode unit of one aspect of the invention, each of the back sheets has a side portion parallel to a longitudinal direction of the back sheet, and the side portions are formed in a stepped shape.

Preferably, in the cathode unit of one aspect of the invention, each of the back sheets has a side portion parallel to a longitudinal direction of the back sheet, and the side portions are formed in a wave shape.

Preferably, in the cathode unit of one aspect of the invention, each of the back sheets has side portions parallel to the longitudinal direction of the back sheet, and one of the side portions adjacent to each other has a convex portion. The other side has a recess on the side. That is, one side portion is formed in a convex shape, and the other side portion is formed in a concave shape.

The cathode unit of the present invention is composed of a plurality of cathodes, and the total area of the base material exposed to the film formation space of the plurality of cathodes (the total area of the sputtering treatment surface) can be made equal to the treated area of the object to be processed. .

Further, in each of the cathodes, each of the two main faces of the cathode is provided with a sputtering target to which a base material is disposed.

Further, each of the targets is configured to be rotatable by a rotation shaft that penetrates the side surface thereof (a rotation shaft that is provided to penetrate the back plate from the first side surface to the second side surface).

In such a configuration, by rotating the target, the main surface facing the object to be processed and the main surface not facing the object to be processed can be changed in the same chamber.

In other words, both of the two main faces of each target can be used as the sputtering treatment surface, and both of the base materials disposed on the two main faces can be applied to the sputtering process.

Therefore, the first sputter film formed by the base material provided on one surface (first main surface) of one back sheet can be uniformly formed on the object to be processed in one film forming space, and can be disposed on one back sheet. A second sputter film formed on the other side (the second main surface) of the base material. In particular, the first sputter film and the second sputter film can be uniformly formed on the object to be processed having a width corresponding to the total area of the plurality of base materials and placed in a static direction with respect to the base material.

Further, by performing the two types of film forming steps in one film forming space, the chamber required for the film forming step can be reduced as compared with the prior art which uses different film forming spaces for each type of film forming step. space.

In addition, after the first film forming process (the film forming process of the first type) is performed, it is not necessary to transport the object to be processed into the film forming space in which the second film forming process (the film forming process of the second type) is performed. Therefore, the time required for the conveyance operation of the object to be processed is not generated as in the prior art, and the operation (step) of exhausting the gas in the chamber without the step of loading or unloading the object to be processed into the chamber does not occur. Time required.

Therefore, the time from the completion of the film formation process of the first film formation process to the start of the second film formation process can be shortened, and the time required for the film formation process can be made longer than in the case of using the prior art.

Hereinafter, embodiments of the present invention will be described with reference to the drawings based on preferred embodiments. Further, in each of the drawings, in order to make each component a level that is recognizable in the drawing, the size and ratio of each component are appropriately different from those of the actual object.

<Embodiment of a film forming apparatus including a cathode unit>

Fig. 1A is a view showing the configuration of a film forming apparatus 200 including a cathode unit 220 according to an embodiment of the present invention.

The film forming apparatus 200 is composed of a chamber 201 for sputtering and a cathode unit 230 formed of a plurality of cathodes 220.

An exhaust device (exhaust portion) P for exhausting the inside of the chamber 201 is attached to a wall portion of the chamber 201.

Each of the cathodes 220 includes: sputtering targets C1, C2, and C3, control units E1, E2, and E3 connected to the targets C1, C2, and C3, and magnetic field generating units H1, H2, and H3.

In addition, in FIG. 1A, although the structure which has three targets is shown as an example, the number of targets is not limited to this embodiment.

Fig. 1B is a perspective view showing enlarged views of the targets C1, C2, and C3 constituting the cathodes 220 of Fig. 1A, respectively.

Each of the back plates 204 constituting the targets C1, C2, and C3 has a rotation shaft 207 perpendicular to the longitudinal direction L thereof, and the rotation shaft 207 passes through the back plate 204 from the first side surface 211 to the second side surface 212.

Each of the rotating shafts 207 is electrically connected to the control units E1, E2, and E3, and is rotatable by the control units E1, E2, and E3.

Further, the backing plate 204 rotates in conjunction with the rotation of each of the rotating shafts 207.

It is desirable that the rotating shaft 207 penetrates the center of gravity of the backing plate 204 in order to achieve stable rotation.

Each of the control units E1, E2, and E3 includes a rotation drive unit, a power supply unit, and a cooling water circulation unit. The rotation drive unit rotates the rotation shaft 207 included in the targets C1, C2, and C3. The power supply unit applies a voltage (electric power) for sputtering to the targets C1, C2, and C3. The cooling water circulation unit supplies cooling water for controlling the temperatures of the targets C1, C2, and C3 to the targets C1, C2, and C3, or discharges the cooling water from the targets C1, C2, and C3.

Each of the targets C1, C2, and C3 is disposed in the chamber 201 at a position facing the stage (supporting table) 203 that supports the substrate (subject to be processed) 202. The support table 203 is grounded through the ground portion G.

Each of the targets C1, C2, and C3 is composed of a back plate 204 having a flat shape, a first base material 205 disposed on the first main surface 204a (one main surface) of the back plate 204, and a second base material. The second base material 206 of 204b (the other main surface) is formed.

As a material constituting each of the back sheets 204, it is desirable to use a material having high conductivity type, thermal conductivity, and low gas release property, mainly using copper or stainless steel. Further, the first main faces of all the back sheets 204 are arranged to form one side, and the second main faces of all the back sheets 204 are arranged to form one side. Thereby, the faces of the plurality of base materials exposed in the film forming space 50 are located on the same surface. Here, the surface of the base material exposed in the film formation space 50 is a surface against which an inert gas such as Ar gas collides during the sputtering process.

As the first base material 205 and the second base material 206, a material of a film formed on a substrate 202 to be processed such as a metal or an insulator is used.

The type (material type) of the first base material 205 and the second base material 206 disposed on the first main surface and the second main surface of all the back sheets 204 is disposed on the back sheet 204 as the sputtering processing surface. All types of base materials are the same (unified). Further, as will be described later, even if the base material used for the sputtering process is changed by the rotation of the rotating shaft 207, the types of all the base materials disposed on the main surface (sputtering surface) of the backing plate 204 are the same. Further, the first base material 205 and the second base material 206 may be made of the same material and may be composed of different materials.

Each of the magnetic field generating portions H1, H2, and H3 is disposed in the self-film forming space 50 (the region where the sputtering is performed) so as to generate a specific magnetic field distribution on the surface of the backing plate 204 close to the film forming space 50. The position, that is, the position close to the surface of the backing plate 204 (non-sputtering surface side).

In the following description, the "non-sputtering surface" of the backing plate 204 means that the first main surface 204a or the second main surface 204b, that is, the base material not used for sputtering (the first base material 205) is placed. Or the main surface of the second base material 206).

In addition, the "sputtering surface" of the backing plate 204 means that the first main surface 204a or the second main surface 204b, that is, the base material (the first base material 205 or the second base material 206) used for sputtering is placed. And disposed on the main surface at a position close to the film formation space 50.

When the "non-sputtering surface" and the "sputtering surface" are switched in accordance with the rotation of the backing plate 204, and the first main surface 204a is a non-sputtering surface, the second main surface 204b is sputtered. When the first main surface 204a is a sputter-treated surface, the second main surface 204b is a non-sputtering surface.

Each of the magnetic fluxes generated by the magnetic field generating portions H1, H2, and H3 penetrates the backing plate 204 from the non-sputtering treatment surface to the sputtering processing surface, and leaks to the mother of the sputtering treatment surface disposed on the backing plate 204. The surface of the material (the first base material 205 in Fig. 1).

In the region where the magnetic flux leaks, since the base material is concentratedly sputtered by the plasma bunching, film formation can be performed at a high speed.

Further, when each of the magnetic field generating portions H1, H2, and H3 is subjected to a sputtering process using the first base material 205, it is disposed so as to be located closer to the second base material 206 and away from the target C. And forming a leakage magnetic flux on the surface of the first base material 205.

Further, when each of the magnetic field generating portions H1, H2, and H3 is subjected to a sputtering process using the second base material 206, it is disposed so as to be located closer to the first base material 205 and away from the target C. And forming a leakage magnetic flux on the surface of the second base material 206.

When the sputtering process is performed, it is desirable that each of the magnetic field generating portions H1, H2, and H3 is disposed at a position close to the targets C1, C2, and C3. However, in order to rotate the targets C1, C2, and C3, it is necessary to The manner in which the rotation is prevented is such that the distance between the magnetic field generating portions H1, H2, H3 and the backing plate 204 is vacant.

Therefore, each of the magnetic field generating units H1, H2, and H3 according to the embodiment of the present invention includes the evacuation drive units (H11, H21, and H31). The evacuation drive units (H11, H21, and H31) are devices for controlling the positions of the magnetic field generating units H1, H2, and H3. Normally, the magnetic field generating units H1, H2, and H3 are disposed at positions close to the targets C1, C2, and C3. Further, when the targets C1, C2, and C3 are rotated, the retracting drive units (H11, H21, and H31) retract the magnetic field generating units H1, H2, and H3 to the outside of the rotation radii of the targets C1, C2, and C3. After the rotation of the targets C1, C2, and C3 is completed, the retracting drive units (H11, H21, and H31) return the targets C1, C2, and C3 to the normal positions (close to the positions of the targets C1, C2, and C3, The radius of rotation of the targets C1, C2, and C3 is more inner).

Further, each of the magnetic field generating portions H1, H2, and H3 according to the embodiment of the present invention may be located outside the radius of rotation of the targets C1, C2, and C3. In the sputtering process only, the evacuation drive units (H11, H21, H31) move the magnetic field generating portions H1, H2, and H3 to positions close to the targets C1, C2, and C3, and after the sputtering process is finished, the drive is retracted. The portions (H11, H21, H31) can return the magnetic field generating portions H1, H2, and H3 to the normal positions.

Further, each of the magnetic field generating units H1, H2, and H3 includes a swing drive unit (H12, H22, and H32). The swing drive portions (H12, H22, H32) swing the magnetic field generating portions H1, H2, and H3 in a direction parallel to the main faces (204a, 204b) of the back plate 204. Further, the swing drive portions (H12, H22, and H32) are at least one of a direction perpendicular to the longitudinal direction L of the targets C1, C2, and C3 and a direction parallel to the longitudinal direction L of the targets C1, C2, and C3. The magnetic field generating portion H is swung.

By this swing, the magnetic flux generated by the magnetic field generating portions H1, H2, and H3 can be uniformly leaked to the surface of the base material disposed at a position close to the sputtering treatment surface of each of the targets C1, C2, and C3. .

By uniformly generating the leakage magnetic flux, a region where the plasma is concentrated is formed on the surface of the base material.

Therefore, the erosion generated on the surface of the base material by the sputtering treatment is uniform, and the utilization efficiency of each of the targets C1, C2, and C3 can be improved.

Further, a film forming process for improving the uniformity of in-plane distribution of the surface of the substrate to be processed 202 can be performed.

Fig. 2 is a cross-sectional view showing the targets C1, C2, and C3 constituting each of the cathodes 220 in the embodiment of the present invention shown in Fig. 1B, and corresponding to the surface perpendicular to the longitudinal direction L.

In the back plate 204 constituting each of the targets C1, C2, and C3, a circulation flow path (the first circulation flow path) formed at a position close to the second main surface 204b and having the flow paths 208a and 208b is formed. And the second circulation flow path). Cooling water flows through the circulation flow path.

Among the flow paths 208a and 208b, the cooling water is introduced from one side and is led out from the other side. By flowing the cooling water to the circulation channels 208a and 208b, the temperature rise of the first base material 205 and the second base material 206 in the sputtering process can be suppressed.

As shown in FIG. 1B and FIG. 2, each of the rotating shafts 207 is connected to the control units E1, E2, and E3.

The sputtering voltage applied to each of the back plates 204 is supplied from the control units E1, E2, and E3 to the backing plate 204 via the power supply lines provided in the respective rotating shafts 207.

Further, the cooling water flowing through the circulation channels 208a and 208b is supplied from the control units E1, E2, and E3 to the circulation flow path via the supply and discharge lines of the cooling water provided in the respective rotation shafts 207.

Further, as shown in FIG. 1B and FIG. 2, a side plate 209 is provided on the side portion 213 parallel to the longitudinal direction L of the back plate 204.

The anti-plate 209 is grounded to prevent particles generated in the sputtering process from being rewound to the side of the backing plate 204.

Further, an insulating member 209a is disposed between the prevention plate 209 and the back plate 204, and the insulating member 209a prevents damage to the prevention plate 209 due to a voltage supplied during sputtering.

3A and 3B are views showing a plurality of targets C (C1, C2, C3) constituting the cathode unit 230 of Fig. 1A viewed from one end side of the rotating shaft 207.

The target C is arranged in a line in such a manner that all the rotation axes 207 are parallel to each other.

As shown in FIG. 3A, as viewed from one end side of the rotating shaft 207, the opposing plates 209 of the target adjacent to each other are disposed in close proximity. In other words, one of the target materials adjacent to each other is disposed so as to be close to the other anti-slip plate (second anti-slip plate). The two sides of the anti-plate are opposite to each other, and have a shape in which the anti-plates do not overlap each other. Specifically, in the case of FIG. 3A, convex portions (convex inclined portions) are provided in a substantially central portion of the surface of the opposing preventing plate 209 (the outer surface of the preventing plate 209), and the convex top portion Close. With this configuration, the sputtered particles are prevented from being wound to the side opposite to the film forming space 50 by the space between the mutually adjacent targets.

Therefore, each target can be rotated (reversed) in an individual rotation direction and a rotation speed.

However, in order to make it difficult for the particles generated in the sputtering process to wrap around to the space on the side of the non-sputtering surface, it is preferable that the adjacent anti-plate 209 of the target is approached so as not to hinder the rotation of each of the targets.

As shown in FIG. 3B, as viewed from one end side of the rotating shaft 207, the opposing plates 209 of the target adjacent to each other are disposed in close proximity. In other words, one of the target materials adjacent to each other is disposed so as to be close to the other anti-slip plate (second anti-slip plate). The two sides of the anti-plate are opposite to each other, and have a shape in which the anti-plates do not overlap each other. Specifically, in the case of FIG. 3B, the center of the anti-plate 209 facing each other (the outer surface of the anti-plate 209) is bounded on the surface of one of the anti-plates 209 (half of the surface). The flat portion forms a convex inclined portion on the surface (half of the surface) of the other anti-plate 209. The convex inclined portion has two inclined faces. The inclined surface of one side is a surface that stands upright from a flat surface at a steep angle, that is, a steeply inclined surface located at the center of the target. The other inclined surface is a gently inclined surface that extends from the top of the convex inclined portion toward the outer side of the preventing plate 209. Further, in the opposing plates 209 facing each other, the steeply inclined faces adjacent to each other are brought into close contact with each other. With this configuration, the sputtered particles are prevented from being wound to the side opposite to the film forming space 50 by the space between the mutually adjacent targets.

4A to 4C are views showing an example of the rotation operation of the target shown in Fig. 3B. All of the rotating shafts 207 are arranged such that a plurality of targets are arranged in parallel so as to be arranged in parallel with each other.

Initially, as shown in FIG. 4A, the main faces of all the back plates 204 on which the first base material 205 is disposed are located on the same surface, and the sputtering treatment surface (not shown) faces in the same direction.

Next, as shown in FIG. 4B, each target is rotated about the rotation axis 207. At this time, the pair of adjacent targets are rotated in mutually opposite directions. Further, each target is rotated in such a manner that the rotation speed of the target is the same.

Thereafter, as shown in FIG. 4C, the main faces of all the back sheets 204 on which the first base material 205 is disposed are located on the same surface, and face the same direction opposite to the sputtering treatment surface.

The cathode unit according to the embodiment of the present invention is configured by a plurality of cathodes, and the total area of the sputtering treatment surfaces of the plurality of cathodes can be made equal to the treated area of the object to be processed.

Further, in each of the cathodes, each of the two main faces of the cathode includes a sputtering target to which each of the base materials is disposed.

Further, each of the targets is rotatable by a rotation shaft (a rotation shaft 207 provided so as to penetrate the back plate 204 from the first side surface 211 to the second side surface 212).

By rotating the target by the above-described configuration, the main surface facing the object to be processed and the main surface not facing the object to be processed can be changed in the same chamber.

In other words, both of the two main faces of each target can be used as the sputtering treatment surface, and both of the base materials disposed on the two main faces can be applied to the sputtering process.

Therefore, the first sputter film formed by the base material provided on one surface (first main surface) of one back sheet can be uniformly formed in one chamber, and the other sputter film can be formed on one back sheet. a second sputter film formed on the base material of one side (second main surface). In particular, the first sputter film and the second sputter film can be uniformly formed on the object to be processed having a width corresponding to the total area of the plurality of base materials and placed in a static direction with respect to the base material.

Further, by performing two types of film forming steps in the same chamber, the space for the chamber required for the film forming step can be reduced as compared with the prior art in which the respective chambers are used for each type of film forming step.

In addition, after the first film forming process (the film forming process of the first type) is performed, it is not necessary to transport the object to be processed to the chamber in which the second film forming process (the film forming process of the second type) is performed. Therefore, the time required for the conveyance operation of the object to be processed is not generated as in the prior art, and the operation (step) of evacuating the gas in the chamber with the step of loading or unloading the object to be processed into the chamber is required. time.

Therefore, the time from the completion of the film formation process of the first film formation process to the start of the second film formation process can be shortened, and the time required for the film formation process can be made longer than in the case of using the prior art.

Further, in the configuration of the embodiment of the present invention, each of the magnetic field generating portions H1, H2, and H3 is disposed at a position separated from the backing plate 204 without being disposed in the backing plate 204.

Therefore, in each of the cathodes 220, only one magnetic field generating portion can be used to form a leakage magnetic flux on the surface of each of the two base materials.

Further, in the case where the second base material 206 and the first base material 205 are made of the same material, the use of each target can be extended as compared with the case where the base material disposed only on one main surface of the backing plate is used as before. period.

Thereby, the number of replacements of the base material can be reduced, and the number of times of the exhaust operation in the chamber 201 (the pressure of the chamber 201 is changed from atmospheric pressure to vacuum) can be reduced as the base material is replaced. .

Further, in the case where each of the first base material 205 and the second base material 206 is formed of a material formed on the lower layer and the upper layer of the laminated film formed on the substrate 102 to be processed, two film formations can be continuously performed using only one target. deal with.

Moreover, by performing two consecutive film forming processes in the same chamber, it is not necessary to discharge the gas in the chamber between the film forming step based on the first base material 205 and the film forming step based on the second base material 206. The operation (step) of the step of gas and the conveyance of the substrate to be processed can shorten the time required for such work (step).

<Embodiment of Manufacturing Method of Target>

The method of manufacturing the target having the configuration of the above embodiment will be described with reference to the step diagrams shown in FIGS. 5A to 5F.

First, in the first step shown in FIG. 5A, the first base material 205 is disposed opposite to the first main surface 204a of the backing plate 204, and the second base material 206 is opposed to the backing plate 204. 2 main surface 204b configuration.

Next, in the second step shown in FIG. 5B, the first base member 205 is joined to the first main surface 204a of the backing plate 204 by a first joining member (not shown).

More specifically, the first bonding member is applied to the first main surface 204a of the backing plate 204 on which the bonding surface is formed, and the backing plate 204 and the first bonding member are heated and melted at a temperature equal to or higher than the melting point.

Thereafter, the first base material 205 is placed on the melted first succeeding member, and is cooled to room temperature while sandwiching the melted first succeeding member between the first base material 205 and the backing plate 204.

As the first succeeding member used in this step, it is desirable to use a low melting point metal such as indium.

In the second step, the backing plate 204 is joined to the first base material 205 in a high temperature state, and is cooled to room temperature in the joined state.

And, as it cools, the backing plate 204 is compressed.

At this time, since the first base material 205 is joined only to the first main surface 204a, the compression ratio of the back plate 204 on the first main surface 204a is different from the compression ratio of the back plate 204 on the second main surface 204b.

Therefore, the backing plate 204 has a shape in which a convex shape is formed on the first main surface 204a or the second main surface 204b.

In FIG. 5B, although the example in which the back plate 204 is convexly curved on the first main surface 204a is shown, the combination of the material constituting the back plate 204 and the first base material 205 is also generated in the second main surface 204b. The case of convex curvature.

Next, in the third step shown in FIG. 5C, the backing plate 204 bent by the joining of the first base material 205 and the backing plate 204 is shaped so as to have a flat shape.

The method of shaping the backing plate 204 is not limited to a specific method. However, in the present embodiment, a method of mechanically correcting the second main surface 204b of the backing plate 204 in a direction opposite to the direction in which the bending occurs is used.

Next, in the fourth step shown in FIG. 5D, the second base member 206 is joined to the second main surface 204b of the backing plate 204 using a second succeeding member (not shown).

More specifically, the second bonding member is applied to the second main surface 204b of the backing plate 204 on which the bonding surface is formed, and the backing plate 204 and the second bonding member are heated and melted at a temperature equal to or higher than the melting point.

Thereafter, the second base material 206 is placed on the melted second succeeding member, and is cooled to room temperature while sandwiching the melted second succeeding member between the second base material 206 and the backing plate 204.

As the second subsequent member used in this step, it is desirable to use a low melting point metal such as indium.

In the fourth step, the backing plate 204 and the second base material 206 are joined at a high temperature, and are cooled to room temperature in a joined state.

And, as it cools, the backing plate 204 is compressed.

At this time, since the first base material 205 is joined to the first main surface 204a and the second base material 206 is joined to the second main surface 204b, the compression ratio of the backing plate 204 of the first main surface 204a is the same as that of the second main surface 204a. The compression ratio of the backing plate 204 of the main surface 204b is different.

Therefore, the backing plate 204 has a shape in which a convex shape is formed on the first main surface 204a or the second main surface 204b.

Therefore, in the fifth step shown in FIG. 5E, the backing plate 204 bent by the joining of the second base material 206 and the backing plate 204 is shaped to have a flat shape.

The method of shaping the backing plate 204 is not limited to a specific method. However, in the present embodiment, a method of mechanically correcting the backing plate 204 by applying pressure in a direction opposite to the direction in which the bending occurs is used.

Thereafter, in the sixth step shown in FIG. 5F, the anti-sliding plate 209 is bonded to the side surface parallel to the longitudinal direction L of the backing plate 204 using an insulating back member (insulating member) 209a, thereby forming an embodiment of the present invention. The target of the form.

Here, although the example in which the backing plate 204 is joined in the order of the first base material 205 and the second base material 206 is shown, the order of joining may be reversed.

According to the method for producing a target according to the embodiment of the present invention, it is not necessary to fix the base material to the base material by using a fixing member such as a bolt or a jig.

Therefore, the entire base material 205 and the second base material 206 disposed on the main surface of each of the back sheets 204 can be used for sputtering.

Further, according to the method of manufacturing a target according to the embodiment of the present invention, after the base material is joined to the first main surface 204a or the second main surface 204b of the back sheet, the back sheet which is bent by the joining has a flat shape. The way to shape.

Therefore, each of the two main faces which can be manufactured on the back plate is joined to a target material having a base material having a flat shape on its surface.

Thereby, since the base material and the substrate to be processed are arranged in parallel, the sputtering particles flying out of the base material can be uniformly adhered to the treated surface of the substrate to be processed, thereby forming a film.

In addition, in FIGS. 5A to 5F, a method of joining the first base material 205 and the second base material 206 to the respective main faces of the backing plate 204 by the following members is shown as an example. As another example, there is a method of fixing the first base material 205 and the second base material 206 to the respective main faces of the backing plate 204 by using a fixing member such as a jig.

When a fixing member such as a jig is used, bending due to a difference in thermal expansion coefficient between the first base material 205 and the back sheet or a difference in thermal expansion coefficient between the second base material 206 and the back sheet does not occur.

Therefore, the steps corresponding to the third step and the fifth step described above are not required, so that the target can be manufactured in a more simplified process.

<Modification 1>

Fig. 6 is a view showing a modification of the target, and is a view of one of the plurality of targets C viewed from one end side of the rotating shaft 607.

The back plate 204 of the above-described embodiment is formed of a single plate, whereas the back plate 614 of the first modification is configured by a plate in which two plates (back plates) 604 and 611 are overlapped.

Inside the backing plate 614, there are provided circulation passages 608a and 608b formed at a position close to the outermost first main surface 614a as the backing plate, and cooling water flows, and the outermost surface formed as a backing plate The circulation passages 613a and 613b in which the second main surface 614b is close to the position and the cooling water flows. In FIG. 6, the same members as those in the first embodiment are denoted by the same reference numerals, and their description is omitted or simplified.

In the configuration of the embodiment of the present invention, the cooling water circulation passages 608a and 608b are formed in the back plate 604 at a position close to either the first main surface 604a or the second main surface 204b.

On the other hand, in the configuration of the first modification, the cooling water circulation passages 608a and 608b are formed in the back plate 614 at positions close to both the first main surface 614a and the second main surface 614b.

Therefore, according to the configuration of the first modification, a target having a relatively high cooling function with respect to both the first base material 605 and the second base material 612 can be obtained.

In the first modification of the target, the base material used for sputtering is disposed on each of the outermost two main faces of the backing plate.

Therefore, after the sputtering process is performed by the first base material 605 disposed on the first main surface 614a in the chamber, the target can be reversed, and sputtering can be performed by the second base material 612 disposed on the second main surface 614b. deal with.

Therefore, in the case where the second base material 612 and the first base material 605 are made of the same material, the use of each target can be extended as compared with the case where the base material disposed only on one main surface of the backing plate is used as before. period.

Thereby, the number of replacements of the base material can be reduced, and the number of operations (steps) of exhausting the gas in the chamber caused by the replacement can be reduced.

Further, in the case where each of the first base material 605 and the second base material 612 is formed of a material formed on the lower layer and the upper layer of the laminated film on the substrate to be processed, two film formation processes can be continuously performed using only one target. .

Moreover, by performing two consecutive film forming processes in the same chamber, it is not necessary to discharge the gas in the chamber between the film forming step based on the first base material 605 and the film forming step based on the second base material 612 The operation (step) of the step of gas and the conveyance of the substrate to be processed can shorten the time required for such work (step).

<Modification of Manufacturing Method of Target>

An example of a method of manufacturing a target having the configuration of the first modification described above will be described.

First, in the first step, the first base member 605 is joined to the first main surface 604a of the backing plate 604 by the first succeeding member.

More specifically, the first bonding member is applied to the first main surface 604a of the backing plate 604 on which the bonding surface is formed, and the backing plate 604 and the first bonding member are heated and melted at a temperature equal to or higher than the melting point.

Thereafter, the first base material 605 is placed on the melted first succeeding member, and is cooled to room temperature while sandwiching the melted first succeeding member between the first base material 605 and the backing plate 604.

As the first succeeding member used in this step, it is desirable to use a low melting point metal such as indium.

In the first step, the backing plate 604 is joined to the first base material 605 in a high temperature state, and is cooled to room temperature in the joined state.

And, as it cools, the backing plate 604 is compressed.

At this time, since the first base material 605 is joined only to the first main surface 604a, the compression ratio of the back plate 604 of the first main surface 604a is different from the compression ratio of the back plate 604 of the second main surface 604b.

Therefore, the back plate 604 has a shape in which a convex shape is formed on the first main surface 604a or the second main surface 604b.

Next, in the second step, the backing plate 604 which is bent by the joining of the first base material 605 and the backing plate 604 is shaped so as to have a flat shape.

The method of shaping the backing plate 604 is not limited to a specific method. However, in the present embodiment, a method of mechanically correcting the backing plate 604 by applying pressure in a direction opposite to the direction in which the bending occurs is used.

Next, in the third step, the second base material 612 is joined to the first main surface 611a of the backing plate 611 using the second succeeding member.

More specifically, the second connecting member is applied to the first main surface 611a of the backing plate 611 on which the bonding surface is formed, and the backing plate 611 and the second bonding member are heated and melted at a temperature equal to or higher than the melting point.

Thereafter, the second base material 612 is placed on the melted second succeeding member, and is cooled to room temperature while sandwiching the melted second succeeding member between the second base material 612 and the backing plate 611.

As the second subsequent member used in this step, it is desirable to use a low melting point metal such as indium.

Next, in the fourth step, the backing plate 611 which is bent by the joining of the backing plate 611 and the second base material 612 is shaped so as to have a flat shape.

The method of shaping the backing plate 611 is not limited to a specific method, but in the present modification, a method of mechanically correcting the backing plate 611 by applying pressure in a direction opposite to the direction in which the bending occurs is used.

Next, in the fifth step, the back plate 604 and the back plate 611 are joined by the following members so that the second main surface 604b of the back plate 604 faces the second main surface 611b of the back plate 611.

Thereafter, in the sixth step, the anti-sliding plate 609 is joined to the side surface parallel to the longitudinal direction of the backing plate 614 by an insulating member (insulating member) 609a, thereby forming a modified example 1 of the target.

In addition, the first step to the second step, the third step to the fourth step can be performed in the order of replacement, and can be performed simultaneously.

Further, in the modified example of the target, the back plate 614 is formed in advance by superimposing the two sheets 604 and 611, and then, similarly to the back sheet 604 of the embodiment of the present invention, the target material is also manufactured. Formed by the method.

According to the modification of the above-described method for producing a target material, it is not necessary to fix the base material to the base material in the case where the base material is fixed to the back plate by using a fixing member such as a bolt or a jig.

Therefore, the entire first base material 605 and the second base material 612 disposed on the respective main faces of the backing plate 614 can be used for sputtering.

Further, according to a modification of the method for producing a target material, after the base material is joined to the first main surface 614a or the second main surface 614b of the back sheet, the back sheet which is bent by the joining is shaped into a flat shape. .

Therefore, each of the two main faces which can be manufactured on the back plate is joined to a target material having a base material having a flat shape on its surface.

Thereby, since the base material and the substrate to be processed are arranged in parallel, the sputtering particles flying out of the base material can be uniformly adhered to the treated surface of the substrate to be processed, thereby forming a film.

<Modification 2, 3>

Fig. 7A is a view showing a plurality of targets C of the first embodiment viewed from one end side of the rotating shaft 207.

FIG. 7B is a view of a plurality of targets C of Modification 2 viewed from one end side of the rotating shaft 207.

Fig. 7C is a view showing a plurality of targets C of Modification 3 viewed from one end side of the rotating shaft 207.

In the first embodiment, the cross section perpendicular to the rotation axis 207 of the back plate constituting each target is a rectangle.

On the other hand, in the second modification, the cross section perpendicular to the rotation axis 207 of the back plate constituting each target (the cross section corresponding to the first side surface 211 and the second side surface 212) has a trapezoidal shape. Further, in Modification 3, the cross section perpendicular to the rotation axis 207 of the back plate constituting each target is a parallelogram.

In the plurality of targets C of Modification 2 or Modification 3, each of the back sheets 304 and 404 has a side surface (side portion) parallel to the longitudinal direction thereof. In the plurality of back sheets 304 and the plurality of back sheets 404, the sides of the back sheets overlap each other in such a manner that one side of the back sheets adjacent to each other coincides with the other side.

That is, in Modification 2 or Modification 3, each of the back sheets adjacent to each other functions as a back panel of the back sheet.

Therefore, the operation of the anti-sliding plate used in the first embodiment is not caused by the side surface parallel to the longitudinal direction of the backing plate, so that the method (step) for manufacturing each target can be simplified.

<Modifications 4, 5, 6>

FIG. 8A is a view of a plurality of targets C viewed from one end side of the rotating shaft 207.

8B to 8D are enlarged cross-sectional views showing a region F1 between two adjacent targets of Fig. 8A. Modification 4 shown in Fig. 8B corresponds to a modification of the structure of the first embodiment. Modification 5 shown in Fig. 8C corresponds to a modification of the structure of the first embodiment. Modification 6 shown in Fig. 8D corresponds to a modification of the structure of the first embodiment.

In the first embodiment, the side portions (side surfaces) parallel to the longitudinal direction of each of the back sheets are formed in a planar shape.

On the other hand, in the modification 4 shown in FIG. 8B, the side portions parallel to the longitudinal direction of each of the back sheets are formed in a stepped shape.

Moreover, in the modification 5 shown in FIG. 8C, the side portions parallel to the longitudinal direction of each of the back sheets are formed in a wave shape.

Further, in the sixth modification shown in FIG. 8D, among the side portions extending in parallel in the longitudinal direction of the mutually adjacent back plates, convex portions are formed on one side portion (one side portion is formed in a convex shape), A concave portion is formed on the other side portion (the other side portion is formed in a concave shape).

In the plurality of targets C of Modifications 4, 5, and 6, each of the back plates 214, 224, and 234 has a side surface (side portion) extending in parallel in the longitudinal direction thereof. In a plurality of back plates 214, a plurality of back plates 224, and a plurality of back plates 234, the sides of the back plates overlap each other such that one side of the mutually adjacent back plates overlaps with the other side.

That is, in Modifications 4, 5, and 6, each of the back sheets adjacent to each other functions as a sheet for the back sheet.

Therefore, the operation of the anti-sliding plate used in the first embodiment is not caused by the side surface parallel to the longitudinal direction of the backing plate, so that the method (step) for manufacturing each target can be simplified.

FIG. 9A is a view of a plurality of targets C viewed from one end side of the rotating shaft 307.

9B to 9D are enlarged cross-sectional views showing a region F2 between two adjacent targets of Fig. 9A. The modification 7 shown in Fig. 9B shows an example in which the above-described modification 2 is further modified. Modification 8 shown in Fig. 9C shows an example in which the above-described modification 2 is further modified. Modification 9 shown in Fig. 9D shows an example in which the above-described modification 2 is further modified.

In the second modification, the side portions (side surfaces) parallel to the longitudinal direction of each of the back sheets are formed in a planar shape.

On the other hand, in the modification 7 shown in FIG. 9B, the side portions parallel to the longitudinal direction of each of the back sheets are formed in a stepped shape.

Moreover, in the modification 8 shown in FIG. 9C, the side portions parallel to the longitudinal direction of each of the back sheets are formed in a wave shape.

Further, in the ninth modification shown in FIG. 9D, among the side portions extending in parallel in the longitudinal direction of the mutually adjacent back plates, convex portions are formed on one side portion (one side portion is formed in a convex shape), A concave portion is formed on the other side portion (the other side portion is formed in a concave shape).

In the plurality of targets C of Modifications 7, 8, and 9, each of the back plates 314, 324, and 334 has a side surface (side portion) extending in parallel in the longitudinal direction thereof. In a plurality of back plates 314, a plurality of back plates 324, and a plurality of back plates 334, the side faces of the back plates overlap each other such that the side faces of the mutually adjacent back plates overlap with the other side faces.

That is, in Modifications 7, 8, and 9, each of the backing plates adjacent to each other functions as a backing plate.

Therefore, the operation of the anti-sliding plate used in the first embodiment is not caused by the side surface parallel to the longitudinal direction of the backing plate, so that the method (step) for manufacturing each target can be simplified.

Industrial availability

The present invention can be widely applied to the case where the object to be processed is subjected to a film forming step by a sputtering method.

200. . . Film forming device

204. . . Backplane

204a, 204b. . . Main face

205. . . First base metal

206. . . Second base metal

207. . . Rotary axis

209. . . Anti-board

209a. . . Insulating member

230. . . Cathode unit

C1, C2, C3. . . Target

E1, E2, E3. . . Control department

H1, H2, H3. . . Magnetic field generating unit

Fig. 1A is a cross-sectional view showing a film forming apparatus including a cathode unit according to an embodiment of the present invention.

Fig. 1B is a perspective view of a cathode unit according to an embodiment of the present invention connected to a control unit.

Fig. 2 is a view showing a cathode unit according to an embodiment of the present invention, and is a cross-sectional view corresponding to a plane perpendicular to a rotating shaft.

Figure 3A is a cross-sectional view of a plurality of targets in an embodiment of the present invention.

Figure 3B is a cross-sectional view of a plurality of targets in an embodiment of the present invention.

Fig. 4A is an explanatory view showing a rotation operation of a plurality of targets in an embodiment of the present invention.

Fig. 4B is an explanatory view showing a rotation operation of a plurality of targets in an embodiment of the present invention.

Fig. 4C is an explanatory view showing a rotation operation of a plurality of targets in the embodiment of the present invention.

Fig. 5A is a view showing a step of a method of producing a target used in an embodiment of the present invention.

Fig. 5B is a view showing a step of a method of manufacturing a target used in an embodiment of the present invention.

Fig. 5C is a view showing a step of a method of manufacturing a target used in an embodiment of the present invention.

Fig. 5D is a view showing a step of a method of manufacturing a target used in an embodiment of the present invention.

Fig. 5E is a view showing a step of a method of manufacturing a target used in an embodiment of the present invention.

Fig. 5F is a view showing a step of a method of manufacturing a target used in an embodiment of the present invention.

Fig. 6 is a view showing a target of the first modification, which is a cross-sectional view corresponding to a plane perpendicular to the rotation axis.

Fig. 7A is a cross-sectional view showing a plurality of targets in an embodiment of the present invention.

Fig. 7B is a cross-sectional view showing a plurality of targets of Modification 2.

7C is a cross-sectional view of a plurality of targets of Modification 3.

Fig. 8A is a cross-sectional view showing a plurality of targets in an embodiment of the present invention.

Fig. 8B is a cross-sectional view showing a target of a modification 4, showing an enlarged cross-sectional view of a region between two adjacent targets.

Fig. 8C is a cross-sectional view of the target of the fifth modification, showing an enlarged cross-sectional view of a region between two adjacent targets.

Fig. 8D is a cross-sectional view showing a target of a modification 6, showing an enlarged cross-sectional view of a region between two adjacent targets.

9A is a cross-sectional view showing a plurality of targets of Modification 2.

Fig. 9B is a cross-sectional view showing a target of a modification 7, showing an enlarged cross-sectional view of a region between two adjacent targets.

Fig. 9C is a cross-sectional view showing a target of a modification 8 showing an enlarged cross-sectional view of a region between two adjacent targets.

Figure 9D is a cross-sectional view of a target of Modification 9, showing an enlarged cross-sectional view of a region between two adjacent targets.

Figure 10A is a cross-sectional view of a film forming apparatus including a cathode unit of the prior art.

Fig. 10B is a view showing a cathode unit of the prior art, which is a cross-sectional view corresponding to a plane perpendicular to the longitudinal direction.

50. . . Film forming space

200. . . Film forming device

201. . . Chamber

202. . . Substrate to be processed (subject to be processed)

203. . . Support table

204. . . Backplane

205. . . First base metal

206. . . Second base metal

220. . . cathode

230. . . Cathode unit

C. . . Target

C1. . . Target

C2. . . Target

C3. . . Target

E1. . . Control department

E2. . . Control department

E3. . . Control department

G. . . Grounding

H1. . . Magnetic field generating unit

H2. . . Magnetic field generating unit

H3. . . Magnetic field generating unit

H11. . . Retreat drive

H12. . . Swing drive

H21. . . Retreat drive

H22. . . Swing drive

H31. . . Retreat drive

H32. . . Swing drive

P. . . Exhaust device (exhaust part)

Claims (9)

A cathode unit, which is used in a film forming apparatus, and includes: a plurality of targets disposed in a film forming space, and comprising: a backing plate having a first main surface, located at the same a second main surface opposite to the main surface, a first side surface, and a second side surface located on a side opposite to the first side surface; the first base material is disposed on the first main surface; and the second base material The second main surface is disposed on the second main surface; and the rotating shaft penetrates the back plate from the first side surface toward the second side surface, and the plurality of rotating shafts are arranged in parallel in the same plane; a control unit that rotates the rotating shaft, applies a voltage for sputtering to the target via the rotating shaft, and is provided to correspond to each of the plurality of targets; and a plurality of magnetic field generating units The method is characterized in that a specific magnetic field distribution is generated on a surface of the backing plate adjacent to the film forming space, and is disposed near a surface of the backing plate separated from the film forming space, and is located outside the backing plate; And the above magnetic field generating part is vented When the leakage magnetic flux is generated in the first base material, it is disposed at a position close to the second base material, and when the leakage magnetic flux is generated in the second base material, is disposed at a position close to the first base material. The cathode unit according to claim 1, wherein the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a rectangular shape. The cathode unit according to claim 1 or claim 2, wherein each of the back sheets has a side portion parallel to a longitudinal direction of the back sheet, and an anti-slip sheet is disposed on the side portion to isolate the edge member. The cathode unit of claim 3, wherein the protrusions are provided on the above-mentioned anti-adhesion plates adjacent to each other. The cathode unit according to claim 1, wherein the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a trapezoidal shape. The cathode unit according to claim 1, wherein the first side surface and the second side surface are perpendicular to a longitudinal direction of the back sheet, and the first side surface and the second side surface have a parallelogram shape. The cathode unit according to any one of claims 2 to 6, wherein each of said back sheets has a side portion parallel to a longitudinal direction of said back sheet, and said side portions are formed in a stepped shape. The cathode unit according to any one of claims 2 to 6, wherein each of said back sheets has a side portion parallel to a longitudinal direction of said back sheet, and said side portions are formed in a wave shape. 2. The cathode unit according to any one of claims 2 to 6, wherein each of said back sheets has a side portion parallel to a longitudinal direction of said back sheet, and one of said side portions adjacent to each other has a convex portion, and the other side portion has a convex portion. The side of one side has a recess.