CN1873049A - Method of elastomer bonding of large area target - Google Patents
Method of elastomer bonding of large area target Download PDFInfo
- Publication number
- CN1873049A CN1873049A CN 200510127176 CN200510127176A CN1873049A CN 1873049 A CN1873049 A CN 1873049A CN 200510127176 CN200510127176 CN 200510127176 CN 200510127176 A CN200510127176 A CN 200510127176A CN 1873049 A CN1873049 A CN 1873049A
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- Prior art keywords
- sputter target
- brick
- backboard
- bricks
- adhesive coating
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Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 229920001971 elastomer Polymers 0.000 title description 2
- 239000000806 elastomer Substances 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000011449 brick Substances 0.000 claims description 168
- 238000000576 coating method Methods 0.000 claims description 52
- 239000011248 coating agent Substances 0.000 claims description 48
- 239000000853 adhesive Substances 0.000 claims description 44
- 230000001070 adhesive effect Effects 0.000 claims description 44
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000005477 sputtering target Methods 0.000 abstract 6
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Embodiments of the present invention generally relate to sputtering targets used in semiconductor manufacturing. In particular, the invention relates to bonding the sputtering target to a backing plate that supports the sputtering target in a deposition chamber. In one embodiment, a method of bonding at least one sputtering target tile to a backing plate comprises providing an elastomeric adhesive layer between the at least one sputtering target tile and the backing plate, and providing at least one metal mesh within the elastomeric adhesive layer, wherein at least a portion of the at least one metal mesh contacts both the at least one sputtering target tile and the backing plate, and the at least a portion of the at least one metal mesh is made of metal wire with diameter greater than 0.5 mm.
Description
Technical field
The present invention relates to be used for the sputter target that electronic installation is made, particularly relate to the method that this sputter target is connected to a backboard (backing plate), in deposition chamber, support this sputter target by this backboard.
Background technology
Physical vapour deposition (PVD) is one of processing procedure the most frequently used during electronic installation is made.PVD is the plasma processing that carries out in a vacuum chamber, and in this vacuum chamber, the target of negative bias exposes to the open air comprising to have than heavy atom and (for example, argon gas in the plasma of) rare gas element, or exposes to the open air in the mixed gas that comprises this class rare gas element.Can cause the emission of the atom of target material to the bombardment (or sputter) of target by rare gas element.The atom that penetrates can be accumulated as one deck deposited film on the substrate in vacuum chamber, and this substrate is positioned on the substrate wafer seat of institute's deposit below the target of vacuum chamber.The main difference of flat-panel monitor sputter and known wafer sputter technology is that the flat-panel monitor sputter uses large-area substrates and rectangular shape thereof.
Fig. 1 (prior art) shows a kind of typical DC magnetron PVD reactor 10, and it comprises that a ground connection vacuum chamber 12, one targets 14 are vacuum-sealed in this ground connection vacuum chamber 12 by an electric isolator 16.A DC power supply unit 18 makes this target 14 form negative bias with respect to this vacuum chamber 12, becomes first-class ion so that an argon gas sputter working gas excites.Yet, it should be noted that radio frequency magnetron sputtering method (RFsputting) also belongs to known technology.The argon gas ion of positively charged is attracted by the target 14 of this bias voltage, and by this target 14 material is sputtered on the substrate 20, and this substrate 20 is positioned at the opposite of this target 14 by wafer holder support.One magnetron 24 that is positioned at this back face of target gives a magnetic field that is parallel to these target 14 front surfaces, with the interception electronics, to increase plasma density and to promote sputtering rate.In the sputter reactor in modern times, this magnetron can be smaller, and can scan near these target 14 back sides.In order to promote the uniformity coefficient of erosion and deposit, even a large-scale magnetron also can scan.Aluminium, titanium and copper target are coated with or are connected to by sputter on the target backboard with a sputtered layer form typically, and this target backboard is by more not expensive and be easier to accept the machine material processed and formed.
The sputter reactor mainly is developed as and is used for substantially for carrying out sputter on the circular silicon wafer in the past.Over the years, the size of silicon wafer is increased to 300mm by diameter 50mm.Need sputter target how much greater than wafer size, on wafer, to produce deposit uniformly.Typically, for some material, the wafer sputter target can form with single round member, as, aluminium and copper, and the material higher for difficulty, single continuous sputtering layer then is formed on the backboard.
Early stage in the nineties, the exploitation of sputter reactor be at be used in giant display (as, as the liquid-crystal display (LCD) of computer screen or TV screen) and be formed at thin film transistor (TFT) circuit on the face glass.This technology is applied in the indicating meter of other type a little later, as, plasma display reaches solar panel, and is applied in other panel part, as, plastics and polymkeric substance.Some early stage reactor design is for being used in the panel that size is about 400mm * 600mm.Because the increase of the flat-panel screens size of making, and reach the realization of scale of mass production when cutting apart after a while when make multi-display on the single glass panel, the size of panel has been and has increased continuously.The producing apparatus of flat panel can be on commercial use, be used for carrying out sputter on minimum is the panel of size of 1.8m, and the expected design of this equipment is for being used in the panel that size is not less than 2m * 2m.
Because the increase of panel size, indium links and sputter target is attached to the mode of backboard in conventional passing through, and along with the sputter target size is cumulative, also becomes very expensive.Therefore, need more economical and durable method, sputter target is linked to the backboard that is used for large area substrate processing system.
Summary of the invention
The embodiment of the invention provides a kind of method that the sputter target brick is connected to backboard.The invention process regular meeting provides a sputter target assembly again, and it comprises an elasticity adhesive coating between a sputter target brick and a backboard.In one embodiment, at least one sputter target brick is connected to the method for a backboard, be included between at least one sputter target brick and this backboard, one elasticity adhesive coating is set, and in this elasticity adhesive coating, at least one wire netting is set, wherein in this at least one wire netting to small part, can with this at least one sputter target brick and contacting with this backboard, reaching in this at least one wire netting to small part is to make greater than the wire of 0.5mm with diameter.
In another embodiment, a kind of method that at least one sputter target brick is connected to a backboard, be included at least one elasticity adhesive coating is set between at least one sputter target brick and this backboard, and at least one elasticity adhesive coating, at least one wire netting is set, wherein in this at least one wire netting to small part, can with at least one sputter target brick and contacting with this backboard, the opening total surface area that reaches this at least one wire netting be this at least one sputter target brick total connection surface-area 40% to 70%.
In another embodiment, one sputter target assembly comprises at least one sputter target brick, one is used for the backboard of this at least one sputter target brick, one elasticity adhesive coating is between this at least one sputter target brick and this backboard, wherein this elasticity adhesive coating should at least one sputter target and this backboard link together, and at least one wire netting is positioned within this elasticity adhesive coating, wherein can contact with this backboard with this at least one sputter target brick to small part in this at least one wire netting, and be to make greater than the wire of 0.5mm to small part in this at least one wire netting with diameter.
In another embodiment, a kind of sputter target assembly comprises at least one sputter target brick, one is used for the backboard of this at least one sputter target brick, at least one elasticity adhesive coating is between this at least one sputter target brick and this backboard, wherein this at least one elasticity adhesive coating should at least one sputter target and this backboard link together, and at least one wire netting is positioned within this at least one elasticity adhesive coating, wherein in this at least one wire netting to small part can with this at least one sputter target brick and contacting with this backboard, the opening total surface area that reaches this at least one wire netting be this at least one sputter target brick total connection surface-area 40% to 70%.
In another embodiment, one sputter target assembly comprises at least one sputter target brick, one is used for the backboard of this at least one sputter target brick, one elasticity adhesive coating is between this at least one sputter target brick and this backboard, wherein this elasticity adhesive coating should at least one sputter target and is linked together with this backboard, and this elasticity adhesive coating comprises metal-powder, its weight range is about 0% to about 80%, to increase heat conductivity, and at least one wire netting is positioned within this elasticity adhesive coating, wherein can contact with this backboard with this at least one sputter target brick to small part in this at least one wire netting, and be to make greater than the wire of 0.5mm to small part in this at least one wire netting with diameter.
Description of drawings
For being described in more detail above-mentioned feature of the present invention, be further detailed by reference example and accompanying drawing at this.Part embodiment accompanying drawings wherein.Yet, it should be noted that accompanying drawing is only represented exemplary embodiments of the present invention, therefore should not think limitation of the scope of the invention, because the present invention also can allow other equivalent embodiment.
Fig. 1 (prior art) is the diagrammatic cross-section of known plasma sputter reactor.
Fig. 2 is the formed rectangular target orthographic plan of the two-dimensional array of target brick.
Fig. 3 A is the conventional sectional view that constitutes of target brick that is connected to a backboard, and this backboard comprises the cooling channel.
Fig. 3 B is four corner regions orthographic plans between the target brick.
Fig. 4 (prior art) expression is connected to the target brick in the synoptic diagram of the ordinary method of one backboard.
Fig. 5 is the sectional view that is connected to the sputter target embodiment of backboard of the present invention.
Fig. 6 is the skeleton view of the embodiment of the used wire netting of the present invention.
Fig. 7 shows the wire netting that uses Fig. 6, and a sputter target is connected to the schema of a backboard.
The orthographic plan of the formed rectangular target of 3 * 2 arrays of Fig. 8 A display target brick.
Fig. 8 B shows the target brick 830C of the backboard that is connected to Fig. 8 A, the sectional view of 830E.
The orthographic plan of the formed rectangular target of 3 * 1 arrays of Fig. 8 C display target brick.
Fig. 8 D shows the orthographic plan by the formed rectangular target of a slice target.
Description of reference numerals
10 DC magnetrons or PVD reactor 12 vacuum chambers
14 targets, 16 electric isolators
18 DC power supply units, 20 substrates
22 substrates, 24 magnetrons
30 rectangular targets, 32 rectangular target bricks
36 jiaos of 34 target backboards
38 continuations, 40 rectangular profile
42 metal plates, 44 metal plates
48 ditch cracks, 46 wire cooling channels
60 warm tables, 62 warm tables
64 adhesion coatings, 66 indium coatings
70 angular zones, 72 gaps
110 backboards, 120 elastic adhesives
120A elastic layer 120B elastic layer
125 wire nettings, 126 openings
130 targets, 810 backboards
820 articulamentums, 825 wire nettings
830G brick 830H brick
830I brick 830J monolithic target
850 the wideest spaces
Embodiment
For large-scale sputter target, the configuration of the target brick of two dimension (as, shown in Figure 2) sometimes be necessary.Orthogonal target brick 32 can be arranged in the rectangular array, and is connected to a target backboard 34.As shown in the orthographic plan of Fig. 2, usually, rectangular target 30 comprises a plurality of rectangular target bricks 32 that are arranged as rectangular array and are connected to a target backboard 34.This target brick size depends on a plurality of factors such as easness that comprise that brick is made, and its number can be 3 * 1,3 * 3,4 * 5 (as shown in Figure 2), or other combination that is suitable for.The basic size of these bricks 32 can (for example) be 750mm * 900mm, thus one 3 * 3 array to be large-scale panel institute necessary.If target material is difficult to use, as, chromium or molybdenum, the then number of the brick in the brick array even more.Illustrated target backboard 34 is rectangular substantially, to meet the shape and the size of the panel for the treatment of the sputter coating, but its corner angle are circular typically, to meet the cavity that supports this backboard 34, and this backboard 34 can comprise a continuation 38 from this cavity, this cavity contains an electric terminal and a plurality of tubulose connector, and the former is used for supplying with this target electric power, and the latter is used to cool off the cooling fluid of this target 30.As shown in Figure 3A, this target backboard 34 that is used for the flat panel sputter is typically by 42,44 formation of two metal plates, and this two metal plate (for example) is then by titanium welding or otherwise connection.Form with linear cooling channel 46 one of in this two flat board 42,44, cooling fluid is flowing in this cooling channel 46.It is more complicated that this backboard 34 more generally is used for the backboard of wafer process, because for the panel size of very big type, cooling bath is set with it, not as a dorsal part vacuum chamber is set, so that the pressure reduction of 30 of very big type targets is minimized.
These bricks 32 can be connected to backboard 34 on its chamber side with a gap 48, and perhaps this gap 48 is formed between these bricks 32.Typically, these bricks 32 be shaped as parallel tubular shape with right angle, and exist the brick array around may form the exception at oblique angle.These gap 48 desires satisfy to make change and the thermal expansion of brick, and its distance is 0 to 0.5mm.Adjacent brick 32 can be directly near, but can not push each other.On the other hand, the width in this gap 48 can not be greater than the plasma dark space, and this is corresponding with the thickness of plasma sheath layer usually, and generally speaking, owing to the usual pressure of argon gas working gas, this gap 48 should be wider than 0.5mm a little.Plasma can't form in the space less than the minor increment of plasma dark space.In addition, shown in the orthographic plan of Fig. 3 B, for the corner district 70 of 32 of four bricks, four bricks 32 that are arranged as rectangular array are easy to along sliding each other, and because of the improper alignment of the different in width in the gap between brick 48.One gap promptly means the point or the space of the interface between at least three bricks, thereby this proper noun does not comprise two lines between brick.Even maximum gap also can appear in the good gap 72 that limits between these bricks 32.To be lower than this plasma dark space be very important so the maximum width in gap 72 is maintained, and this can be avoided forming plasma in this gap 72.Therefore, when these bricks of sputter, the titanium backboard 34 of underlay can not produce sputter.
Get back to Fig. 2, these bricks 32 can be arranged in the rectangular profile 40, to meet or to be a bit larger tham the area of the target 30 of desiring to carry out sputter generally.The magnetron 24 of Fig. 1 can scan in this profile 40.Plate washer or alternate manner can be exposed to high-density plasma in order to the not tile work surface of avoiding backboard 34 and by sputter.And do not require the backboard 34 that carries out clear sputter (as, make and supported molybdenum or other brick with materials such as titaniums).Even this backboard 34, does not require this backboard by constituting with these target brick 32 identical materials yet and produces sputter.This backboard 34 is structures of a complexity, and when one group of brick 32 exhausts the back and will be used for one group of new brick 32, promptly should repolish.Any sputter of this backboard 34 all should be avoided.
A plurality of processes are arranged and connect material and can be used for the target brick is connected to this backboard.Fig. 4 represents a kind of common processing procedure (prior art), comprises an equipment, and it comprises two warm tables 60,62.These bricks 32 can be coated its dorsal part with an adhesion coating 64 (as, indium).This warm table 60 can be heated to about 200 ℃ with the brick 32 of this coating, far above 156 ℃ of the fusing points of indium, so indium can soak these bricks 32 and form a uniform smelting zone.Similarly, this backboard 34 can place on another warm table 62, and can be heated to about 200 ℃ with 66 coatings of indium coating.Because of the use of the indium coating 64,66 of molten state, these bricks 32 can remove by this first 60, reversing, and be positioned over backboard 34 tops of indium coating 64,66 with this fusing, these coatings 64,66 face with each other and its sputter faces up.During cooling, indium can solidify and these bricks 32 are connected to this backboard 34.
Along with indium is connected to this backboard with the target brick, because the different thermal expansion of this target brick and the storeroom of this backboard, for example, molybdenum target is connected to the aluminium backboard, can produce a problem.When the connection temperature of this tie-in module by about 200 ℃ indium, when being cooled to room temperature, this different thermal expansion is easy to make this assembly bending.Because the pliability of solid indium, this sinuousness can be pushed back by this tie-in module.Yet, the normally uncontrollable program of such extrusion, and these bricks may during extrusion slide over each other, and produce unfavorable unjustified, as, greater than the gap of plasma dark space (for example, 1mm).
In addition, large-scale like this physical construction is difficult for controlling for the ideal degree of registration is provided, particularly, even a plurality of bricks that connect is neither greater than 0.5mm apart.Therefore, unjustified brick 32 the wideest gaps can become greater than the plasma dark space, for example, 1mm, then plasma can be propagated to this backboard 23.If this gap only is slightly wider than this plasma dark space, the isoionic state in this gap promptly can be unstable, and be easy to make the particle of this target material but not atom produces and peels off, thereby the generation particle that can pollute.If plasma reaches this backboard, promptly can carry out sputter.If these bricks are different with the material of this backboard, then the sputter of this backboard can cause the pollution of material.Moreover the sputter of this backboard can make that being used for re-using of backboard that repolishes target becomes more difficult.
Embodiments of the invention provide a kind of and use the elasticity tackiness agent and sputter target or target brick are connected to the method for this backboard.Have connection the target brick backboard can lower temperature (as, be lower than 100 to 150 ℃) time solidifies, and reduced this backboard and a plurality of connection target brick produces crooked risk.Notion of the present invention can be applicable to sputter target or the target brick that connects all any sizes, and it is used in the substrate of handling any kind.Notion of the present invention can be applicable to greater than 750cm
2Target, be preferably and be applied in greater than 2000cm
2Target, be more preferred from and be applied in greater than 15000cm
2Target, and the best is used for greater than 40000cm
2Target.Fig. 5 demonstration is connected to the sectional view of a backboard 110 with an elasticity adhesive coating 120 with a target (or target brick) 130 by using at least one wire netting 125.This target 130 can be a monolithic target, is welded into a plurality of target bricks of a slice, a plurality of target bricks that are closely adjacent to each other and place, or a plurality of target bricks that are closely adjacent to each other and place and weld.This target can any kind sputter material make, this material contains just like elements such as aluminium, copper, gold, nickel, tin, molybdenum, chromium, zinc, palladium, stainless steel, indium, titanium, tungsten, neodymiums, and combination.The film example that forms with the deposit of sputter target institute comprises: aluminium, neodymium aluminium, aluminium alloy, copper, copper alloy, gold, nickel, tin, tin alloy, molybdenum, molybdenum nitride, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, chromium, zinc, zinc oxide, palladium, palldium alloy, stainless steel, and tin indium oxide (ITO).
Example in order to the target material of making flat-panel screens is a molybdenum.This backboard is that sputter target provides support, and provides electrical connection to power supply.This backboard 110 can be made by conductive material, as, aluminium, copper, gold, nickel, tin, molybdenum, chromium, zinc, neodymium, stainless steel, neodymium alloy, tin alloy, aluminium alloy, and copper alloy.The back veneer material that is used for the pvd chamber of flat-panel screens manufacturing for example is an aluminium.
This wire netting 125 can be made by any metal with good electrical and/or heat conduction property, as, copper, aluminium, copper alloy, aluminium alloy.Between this target 130 and this backboard 110, there is at least one wire netting 125.This wire netting 125 can provide electricity and/or the heat conduction path between this target 130 and this backboard 110, and it is connected to power supply.Fig. 6 shows the skeleton view of the embodiment of this wire netting 125, and this wire netting 125 is made with the wire that overlaps.The wire of this wire netting 125 can be configured to a plurality of patterns.The opening 126 of this wire netting 125 should reach greatly, be enough to make this elasticity tackiness agent 120 to pass through, and guarantee that this wire netting is good with contacting of this target 130 and this backboard 110, and avoid this elasticity tackiness agent 120 110 of this target 130 and this backboards certain partly (as, in zone near these target central authorities) accumulation.Between about 40% to about 70%, and the best is between about 55% to about 65% to the total surface area of these openings 126 to the per-cent of total connection surface-area.If the per-cent of the total surface area of these openings 126 is too low, this elasticity tackiness agent can can't pass through this wire netting, and this wire netting can can't contact with this target and/or this backboard.In addition, provide good contact the between this target 130 and this backboard 110 in order to ensure this wire netting 125, so that pvd chamber carries out sputter to target when handling the large area substrate, should be at least 0.5mm in order to the diameter wiry of making this wire netting, be preferably greater than 0.8mm, so that sufficient electricity and/or thermo-contact to be provided.
Fig. 7 shows the embodiment of the processing procedure that this target 130 and this backboard 110 are connected with at least one wire netting 125 with elasticity tackiness agent 120.In step (1), this target 120 and this backboard can experience a plurality of surface preparation substeps, as, polish the surface of this target edge and clean this target and this backboard, these surfaces can be accepted this connection material (or tackiness agent) subsequently, and after these surface preparation substeps, this target and this backboard can be positioned on the underwork (not shown).The underwork that is used for this target 130 comprises a plurality of mechanisms, and it can support or grasp this target 130 and make it move in the step after a while.The carrying out of these preparation substeps can guarantee that the ready and firm frame of this target 130 and this backboard 110 is in these underworks.This target 130 can be by being welded as a slice or several pieces a plurality of bricks are made, or also can be without welding single.This target 130 also can be used at the semiconductor wafer processing greater than the substrate of 300mm.In such situation, this target is circular.
In step (2), the formed layer of elastomerics (or elasticity tackiness agent) 120A can be coated on this target 130 away from the surface of this underwork the surface of this backboard (or in the face of).The formed layer of elastomerics (or elastomerics tackiness agent) 120B also can be coated on this backboard 110 away from the surface of this underwork (or in the face of this mark Yi surface).
In step (3), one wire netting 125 (or an electricity and/or thermal conduction thing) can place on this elastic layer, this elastic layer is coated on this backboard in step (2), and the target 130 that scribbles this elastic layer 120A in step (2) can overturn, to allow this elastic layer 120A downwards in the face of this backboard 110.Then, this target 130 can be positioned this backboard 110 tops, so that this target 130 is linked together with this backboard 110.This wire netting 125 should place default link position, with at this target 130 after 110 extruding of this backboard, allow this wire netting to place between this target 130 and this backboard 110.This target 130 can be manually or is overturn and be positioned this backboard 110 tops by mechanism.For bigger target, as, surface-area is greater than 20m
2, because of the size and the weight of this target, manual upset and target support meeting be difficulty comparatively, so need physical construction to carry out this task.
In step (4), this target 130 can slowly be reduced to this backboard 110, to allow elastic layer 120A and this wire netting 125 on this target 130 and to contact with elastic layer 120B on this backboard 110.This elastic layer 120 can form by this elastic layer 120A and this elastic layer 120B are pressed together, and then is cured.Elastic layer 120A on this target 130 and the elastic layer 120B on this backboard 110 can fill up the space in this wire netting and become elastic layer 120, and this wire netting 125 can contact with this target 130 and with these backboard 110 generations, and electricity and heat conductivity are provided.In one embodiment, static(al) weight can place on this sputter target top, so that this sputter target is pushed this backboard.In another embodiment, this sputter target and this backboard can press together to clamp together thing.The gas of heating liquids (as, water) or heating (as, nitrogen) can be then by the heat tunnel in this backboard 110, and solidifies this elastomerics.This elastomeric curing can avoid the gas during PVD handles to leak, and this PVD handles operation under high vacuum (10-4Torr).Bending for fear of this target and/or backboard is contemplated to be in low-temperature curing.Temperature range is at about 25 ℃ to about 100 ℃, and is preferably about 45 ℃ to about 70 ℃, and is more preferred from about 45 ℃ to about 55 ℃.Elastomeric curing can at room temperature be carried out, and this can relatively need the long time, for example, and 1 day.Hot setting can shorten set time, for example, is 8 hours under 50 ℃.With respect to the treatment temp (about 200 ℃) that indium connects, the elasticity connection has the advantage of low process temperatures (30 ℃ to 100 ℃).Low process temperatures has reduced target and backboard produces crooked risk after connecting processing procedure.
The embodiment of the described processing procedure of Fig. 7 shows, places the sputter target of this backboard top, pushes this backboard.The position of this sputter target and this backboard is turning to be, this sputter target is positioned at this backboard below.In this situation, before this backboard was reduced to pushing this wire netting and this sputter target, this wire netting can place earlier on the elastic layer on this sputter target.
This target 130 can be the target material of a slice, or is made of the target material of multi-disc.In one embodiment, a plurality of target bricks can be connected to this backboard.These bricks are close to storing together, and the space between these bricks preferable be maintained be lower than the plasma dark space (example, 1mm).Fig. 8 A shows six brick 830A, 830B, 830C, 830D, the 830E that is connected to a backboard 810, and the schematic top view of 830F.These six brick 830A, 830B, 830C, 830D, 830E, and 830F can have identical or different size.Fig. 8 B is presented at two brick 830C of these backboard 810 tops and the cut-away section synoptic diagram of 830E.Between this backboard 810 and these target bricks 830C, 830E, the articulamentum 820 that has wire netting in the layer is arranged, and this wire netting contacts with this target brick 830C, 830E and this backboard 810.The wideest space 850 should be maintained and be lower than the plasma dark space between these target bricks 830C, the 830E.Fig. 8 C shows another example of the many bricks that are connected to this backboard.These three brick 830G, 830H, 830I can be connected to this backboard 810.These bricks also can weld together earlier and become a sheet of before being connected to this backboard.These target bricks can pass through laser welding earlier before being connected to this backboard, electrons leaves welding, or mode such as FSW connects.Fig. 8 D shows the monolithic target 830J that is connected to this backboard 810.
Use wire netting also to can be applicable to the connection of other type as the principle of an electricity and/or thermal conduction thing.For example, a wire netting also can use indium as the connection material, and places between these two conducting stratums.Use also be can be used for connecting at the target of the processing of semiconductor wafer in pvd chamber by the principle of the wire netting that diameter is made greater than the wire of 0.5mm.Principle of the present invention can be applicable to and connects a plurality of sputter target, to make flat-panel screens, solar panel, or electronic installation.
Above be at embodiments of the invention, yet deviating under the base region of the present invention, also can make other more embodiment of the present invention, and scope of the present invention is judged by the scope of claims.
Claims (47)
1. one kind is connected to the method for a backboard with at least one sputter target brick, and it comprises at least:
Between at least one sputter target brick and described backboard, an elasticity adhesive coating is set; And
In described elasticity adhesive coating, at least one wire netting is set;
It is characterized in that at least a portion of described at least one wire netting not only contacts with described at least one sputter target brick but also in described backboard, and described at least a portion of described at least one wire netting is to make greater than the wire of 0.5mm with diameter.
2. method according to claim 1 further comprises:
The elasticity adhesive coating that is filled between described at least one sputter target brick and described backboard is solidified.
3. method according to claim 2 is characterized in that, is to carry out in the temperature that is lower than 100 ℃ with described elasticity adhesive coating step of curing.
4. method according to claim 2 is characterized in that, is to finish to about 70 ℃ hot water for about 45 ℃ by feed temperature in a plurality of heat tunnels of described backboard with described elasticity adhesive coating step of curing.
5. method according to claim 1 is characterized in that, has at least three sputter target bricks, and described at least three sputter target bricks are arranged side by side each other, and the wideest gap is narrower than described plasma dark space between described at least three sputter target bricks.
6. method according to claim 1 is characterized in that, described at least one sputter target brick is to be made by a plurality of sputter target bricks, and these sputter target bricks welded together earlier before connecting.
7. method according to claim 1 is characterized in that, described elasticity adhesive coating comprises metal-powder, and its weight range is between about 0% to about 80%, to increase thermal conductivity.
8. method according to claim 1 is characterized in that, a plurality of opening total surface areas of described wire netting, be described at least one sputter target brick total connection surface-area 40% to 70%.
9. method according to claim 1 is characterized in that, total connection surface-area of described at least one sputter target brick is greater than 750cm
2
10. method according to claim 1 is characterized in that, described at least one sputter target brick is non-circular.
11. method according to claim 1, it is characterized in that, the constituent material of described at least one sputter target contains the element of selecting in the group that is made up of following metal, and the composition of described group is: aluminium, copper, gold, nickel, tin, molybdenum, chromium, zinc, palladium, stainless steel, indium, titanium, tungsten, neodymium and combination thereof.
12. method according to claim 1, it is characterized in that, described backboard is to be made by conductive material, select in the group that described conductive material is made up of following metal, the composition of described group is: aluminium, copper, gold, nickel, tin, molybdenum, chromium, zinc, palladium, stainless steel, palldium alloy, tin alloy, aluminium alloy, copper alloy and combination thereof.
13. one kind is connected to the method for a backboard with at least one sputter target brick, it comprises at least:
Between at least one sputter target brick and described backboard, at least one elasticity adhesive coating is set; And
In at least one elasticity adhesive coating, at least one wire netting is set, it is characterized in that, described at least one wire netting to small part, be to contact with at least one sputter target brick and described backboard, and a plurality of opening total surface areas of described at least one wire netting be described at least one sputter target brick total connection surface-area 40% to 70%.
14. method according to claim 13 further comprises:
At least one elasticity adhesive coating that is filled between described at least one sputter target brick and described backboard is solidified.
15. method according to claim 13 is characterized in that, has at least three sputter target bricks, and described at least three sputter target bricks are arranged side by side each other, and the wideest gap is narrower than described plasma dark space between described at least three sputter target bricks.
16. method according to claim 13 is characterized in that, in described at least one wire netting is to make greater than the wire of 0.5mm with diameter to small part.
17. method according to claim 13 is characterized in that, described at least one sputter target brick is non-circular.
18. method according to claim 13 is characterized in that, total connection surface-area of described at least one sputter target brick is greater than 750cm
2
19. a sputter target assembly, it comprises at least:
At least one sputter target brick;
One is used for the backboard of described at least one sputter target brick;
A kind of elasticity adhesive coating is between described at least one sputter target brick and described backboard, and wherein said elasticity adhesive coating links together described at least one sputter target and described backboard; And
At least one wire netting is positioned within the described elasticity adhesive coating, it is characterized in that, at least a portion of described at least one wire netting, be to reach with described at least one sputter target brick to contact, and described at least a portion of described at least one wire netting is to make greater than the wire of 0.5mm with diameter with described backboard.
20. sputter target assembly according to claim 19 is characterized in that, a plurality of opening total surface areas of described at least one wire netting, be described sputter target brick total surface area 40% to 70%.
21. sputter target assembly according to claim 19 is characterized in that, described at least one sputter target brick is non-circular.
22. sputter target assembly according to claim 19 is characterized in that, has at least three sputter target bricks, and described at least three sputter target bricks are arranged side by side each other, and the wideest ditch crack is narrower than described plasma dark space between the described at least three sputter target bricks.
23. sputter target assembly according to claim 19 is characterized in that, at least one in described at least one sputter target brick is to be made by a plurality of sputter target bricks, and before these sputter target bricks were connected to described backboard, these sputter target bricks can weld together earlier.
24. sputter target assembly according to claim 19 is characterized in that, described elasticity adhesive coating comprises metal-powder, and its weight range is about 0% to about 80%, to increase heat conductivity.
25. sputter target assembly according to claim 19 is characterized in that, only has single sputter target brick.
26. sputter target assembly according to claim 19, it is characterized in that, a plurality of heating tanks are arranged in the described backboard, and make described at least one elasticity adhesive coating solidify, avoiding gas to leak, and be to finish to about 70 ℃ hot water for about 45 ℃ by in a plurality of heating tanks of described backboard, feeding temperature with described elasticity adhesive coating step of curing.
27. sputter target assembly according to claim 19 is characterized in that total connection surface-area of described at least one sputter target brick is greater than 750cm
2
28. sputter target assembly according to claim 19 is characterized in that, described sputter target assembly is the PVD sputter target assembly that is used to make flat-panel screens and solar panel.
29. a sputter target assembly, it comprises at least:
At least one sputter target brick;
One is used for the backboard of described at least one sputter target brick;
At least one elasticity adhesive coating between described at least one sputter target brick and described backboard, is characterized in that, described at least one elasticity adhesive coating links together described at least one sputter target and described backboard; And
At least one wire netting is positioned within described at least one elasticity adhesive coating, it is characterized in that, at least a portion of described at least one wire netting contacts with described at least one sputter target brick and described backboard, and the opening total surface area of described at least one wire netting be described at least one sputter target brick total connection surface-area 40% to 70%.
30. sputter target assembly according to claim 29 is characterized in that, described at least a portion of described at least one wire netting is to make greater than the wire of 0.5mm with diameter.
31. sputter target assembly according to claim 29 is characterized in that, described at least one sputter target brick is non-circular.
32. sputter target assembly according to claim 29 is characterized in that, has at least three sputter target bricks, and described at least three sputter target bricks are arranged side by side each other, and the wideest ditch crack is narrower than described plasma dark space between described at least three sputter target bricks.
33. sputter target assembly according to claim 29 is characterized in that, at least one in described at least one sputter target brick is to be made by a plurality of sputter target bricks, and before these sputter target bricks were connected to described backboard, these sputter target bricks welded together earlier.
34. sputter target assembly according to claim 29 is characterized in that, described at least one elasticity adhesive coating comprises metal-powder, and its weight range is about 0% to about 80%, to increase heat conductivity.
35. sputter target assembly according to claim 29 is characterized in that, only has single sputter target brick.
36. sputter target assembly according to claim 29, it is characterized in that, a plurality of heating tanks are arranged in the described backboard, and make described elasticity adhesive coating solidify, avoiding gas leakage, and be to finish to about 70 ℃ hot water for about 45 ℃ by in a plurality of heating tanks of described backboard, feeding temperature with described elasticity adhesive coating step of curing.
37. sputter target assembly according to claim 29 is characterized in that, total connection surface-area of described at least one sputter target brick is greater than 750cm
2
38. sputter target assembly according to claim 29 is characterized in that, described sputter target assembly is the PVD sputter target assembly that is used to make flat-panel screens and solar panel.
39. a sputter target assembly, it comprises at least:
At least one sputter target brick;
A backboard that is used for described at least one sputter target brick;
A kind of elasticity adhesive coating is between described at least one sputter target brick and described backboard, it is characterized in that, described elasticity adhesive coating links together described at least one sputter target and described backboard, and described elasticity adhesive coating comprises metal-powder, its weight range is about 0% to about 80%, to increase heat conductivity; And
At least one wire netting is positioned within the described elasticity adhesive coating, it is characterized in that, at least a portion of described at least one wire netting reaches with described at least one sputter target brick and contacts with described backboard, and described at least a portion of described at least one wire netting is to make greater than the wire of 0.5mm with diameter.
40. according to the described sputter target assembly of claim 39, it is characterized in that, a plurality of opening total surface areas of described at least one wire netting, be described sputter target brick total surface area 40% to 70%.
41., it is characterized in that described at least one sputter target brick is non-circular according to the described sputter target assembly of claim 39.
42., it is characterized in that, have at least three sputter target bricks, and described at least three sputter target bricks are arranged side by side each other, and the wideest gap is narrower than described plasma dark space between described at least three sputter target bricks according to the described sputter target assembly of claim 39.
43., it is characterized in that at least one in described at least one sputter target brick is to be made by a plurality of sputter target bricks according to the described sputter target assembly of claim 39, before these sputter target bricks were connected to described backboard, these sputter target bricks welded together earlier.
44. according to the described sputter target assembly of claim 39, it is characterized in that, only have single sputter target brick.
45. according to the described sputter target assembly of claim 39, it is characterized in that, a plurality of heating tanks are arranged in the described backboard, and make described elasticity adhesive coating solidify, avoiding gas leakage, and be to finish to about 70 ℃ hot water for about 45 ℃ by in a plurality of heating tanks of described backboard, feeding temperature with described elasticity adhesive coating step of curing.
46., it is characterized in that total connection surface-area of described at least one sputter target brick is greater than 750cm according to the described sputter target assembly of claim 39
2
47., it is characterized in that described sputter target assembly is the PVD sputter target assembly that is used to make flat-panel screens and solar panel according to the described sputter target assembly of claim 39.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68609505P | 2005-05-31 | 2005-05-31 | |
| US60/686,095 | 2005-05-31 | ||
| US11/224,221 | 2005-09-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1873049A true CN1873049A (en) | 2006-12-06 |
Family
ID=37483644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510127176 Pending CN1873049A (en) | 2005-05-31 | 2005-11-14 | Method of elastomer bonding of large area target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1873049A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7550055B2 (en) | 2005-05-31 | 2009-06-23 | Applied Materials, Inc. | Elastomer bonding of large area sputtering target |
| CN102299161A (en) * | 2010-06-24 | 2011-12-28 | 佳能株式会社 | Radiation detection apparatus and radiation imaging system |
| WO2012065471A1 (en) * | 2010-11-18 | 2012-05-24 | 宁波江丰电子材料有限公司 | Target material soldering method |
| CN104928633A (en) * | 2014-03-18 | 2015-09-23 | 汉能新材料科技有限公司 | Target material binding method |
| CN105849633A (en) * | 2013-12-20 | 2016-08-10 | 攀时奥地利公司 | W-Ni sputter target |
| CN106032568A (en) * | 2015-03-19 | 2016-10-19 | 汉能新材料科技有限公司 | Sputtering target and binding method thereof |
| CN106555161A (en) * | 2015-09-29 | 2017-04-05 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacture method |
| CN108570652A (en) * | 2018-07-24 | 2018-09-25 | 江苏迪丞光电材料有限公司 | A kind of rotary target material and preparation method thereof bearing high power sputtering |
| CN110017318A (en) * | 2019-03-27 | 2019-07-16 | 先导薄膜材料（广东）有限公司 | The device and method of elasticity binding target |
| CN110846627A (en) * | 2019-11-14 | 2020-02-28 | 张俊杰 | Cold binding process for rotary target material |
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2005
- 2005-11-14 CN CN 200510127176 patent/CN1873049A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7550055B2 (en) | 2005-05-31 | 2009-06-23 | Applied Materials, Inc. | Elastomer bonding of large area sputtering target |
| CN102299161A (en) * | 2010-06-24 | 2011-12-28 | 佳能株式会社 | Radiation detection apparatus and radiation imaging system |
| US8653463B2 (en) | 2010-06-24 | 2014-02-18 | Canon Kabushiki Kaisha | Radiation detection apparatus and radiation imaging system |
| CN102299161B (en) * | 2010-06-24 | 2014-05-07 | 佳能株式会社 | Radiation detection apparatus and radiation imaging system |
| WO2012065471A1 (en) * | 2010-11-18 | 2012-05-24 | 宁波江丰电子材料有限公司 | Target material soldering method |
| CN105849633A (en) * | 2013-12-20 | 2016-08-10 | 攀时奥地利公司 | W-Ni sputter target |
| CN104928633A (en) * | 2014-03-18 | 2015-09-23 | 汉能新材料科技有限公司 | Target material binding method |
| CN106032568A (en) * | 2015-03-19 | 2016-10-19 | 汉能新材料科技有限公司 | Sputtering target and binding method thereof |
| CN106555161A (en) * | 2015-09-29 | 2017-04-05 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacture method |
| CN106555161B (en) * | 2015-09-29 | 2021-04-27 | 合肥江丰电子材料有限公司 | Target assembly and manufacturing method thereof |
| CN108570652A (en) * | 2018-07-24 | 2018-09-25 | 江苏迪丞光电材料有限公司 | A kind of rotary target material and preparation method thereof bearing high power sputtering |
| CN108570652B (en) * | 2018-07-24 | 2019-04-12 | 江苏迪丞光电材料有限公司 | A kind of rotary target material and preparation method thereof bearing high power sputtering |
| CN110017318A (en) * | 2019-03-27 | 2019-07-16 | 先导薄膜材料（广东）有限公司 | The device and method of elasticity binding target |
| CN110846627A (en) * | 2019-11-14 | 2020-02-28 | 张俊杰 | Cold binding process for rotary target material |
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