CN108570652A - A kind of rotary target material and preparation method thereof bearing high power sputtering - Google Patents
A kind of rotary target material and preparation method thereof bearing high power sputtering Download PDFInfo
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- CN108570652A CN108570652A CN201810818156.9A CN201810818156A CN108570652A CN 108570652 A CN108570652 A CN 108570652A CN 201810818156 A CN201810818156 A CN 201810818156A CN 108570652 A CN108570652 A CN 108570652A
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- target
- penstock
- mesh sheet
- high power
- wall
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
The present invention relates to sputtering target material technical fields, a kind of rotary target material bearing high power sputtering is specifically provided, including penstock and it is fixedly attached to a section target of penstock outer wall, penstock and target are connect by the sandwich structure that the bonding material and metal mesh sheet that both are filled in gap form.The target preparation process includes mainly four steps：(1) penstock and target are cleaned；(2) metal mesh sheet is wrapped in penstock, one layer of metal mesh sheet of inner surface lining of target；(3) then the brushing of bonding material is sleeved on target in penstock from one end on penstock surface and target bore area, fixed；(4) target that installs of set and penstock solidification to get.The target of the present invention can bear high-power sputtering, meet the needs of current high-power coating process, greatly improve the efficiency of plated film.
Description
Technical field
The invention belongs to sputtering target material technical field, a kind of bonding magnetron sputtering rotary target material and preparation method thereof, specifically
It is related to a kind of rotary target material and preparation method thereof bearing high power sputtering.
Background technology
Lattice wave husband is found that cathodic sputtering phenomenon in the lab within 1842, since people lack deeply sputtering mechanism
Solution and Sputtering Thinfilm Technology develop slowly, and commercialized magnetron sputtering apparatus is just gradual applied to laboratory and small until 1970
Type produces.From in the 1980s, being with integrated circuit, information storage, liquid crystal display, laser memory, electronic controller
Main son initially enters the high-speed developing period with information industry, and magnetron sputtering technique just actually enters industrialization from laboratory applications
Large-scale production application field.In the past 10 years, as international, domestic market is to Low-E glass, solar cell, panel display screen
Touch screen, the sharp increase of optic communication and magnetic memory device and coated cutter, gear and ornament demand, magnetron sputtering technique is more
It is to achieve the development advanced by leaps and bounds, magnetron sputtering technique and film preparation at present is global field of new materials research and development and concern
A big hot spot.Domestic sputtering target material industry size is also growing, and speedup is higher than global speedup, shared in world market
Share is gradually promoted.
Sputtering target material usually has two classes：Planar targets and rotary target material.In recent years, due to the high speed development of coating technique,
To the sputtering power that target can be born, bonding techniques and target utilization requirement are higher and higher.Due to the utilization rate of flat target
There is 20-30%, therefore, rotary target is increasingly becoming the main product of industrialized coating industry, and major target manufacturer is all in rotary target
A large amount of fund and energy have been put into terms of bonding techniques and process exploitation.
Current most common bonding method is to use indium as bonding material.Specific method is first to stainless steel penstock and single-unit
Target is heated (156.6 DEG C of fusion temperature for being higher than indium), and the indium melted ultrasonic wave is then applied indium machine (or steel brush)
It is coated in outer surface of steel tube and target inner surface respectively, forms soakage layer.Then steel pipe is vertically fixed on a special holder
Above, with heating rod in steel duct to its heat stepwise, tubular target is from top to bottom set in penstock, after fixed good position,
Liquid indium after fusing is poured into target and steel pipe gap, after indium cooling and solidifying, target is bonded as one with steel pipe.Such as
This is bonded on steel pipe once section section target repeatedly, finally cleans up indium extra in adjacent target gap, a rotary target
Material is calculated bonding and is completed.
But there are many defects for this bonding method：1. by low-melting limitation, target using when sputtering power increase
(>=10KW/M) when, miss target phenomenon can be caused because indium melts, can not meet the demand of high-power sputtering instantly, and melt
Indium can generate pollution to coating chamber and product.2. indium will reach molten state during bonding, need to add penstock and target
Heat is to 160 degree or more；Whole process is all manual operations, has certain danger, and operation is constant, bonding efficiency is low.3. ultrasonic wave
When applying indium, indium atomization is harmful to human body and environment.
Invention content
Based on the defect of the above-mentioned prior art, the present invention provides a kind of rotary target material and its system bearing high power sputtering
Preparation Method.By using graphene composite material as bonding material, avoids phosphide material and melt the pollution generated, it can be in room temperature
Lower bonding magnetron sputtering rotary target material not will produce in high power (>=15KW/M), sputtering for a long time and miss the target, split target and knot
The problems such as tumor.
The present invention provides a kind of rotary target material bearing high power sputtering, rises and includes penstock and be fixedly attached to penstock
One section target of outer wall；The penstock is made up of with the target the bonding material and metal mesh sheet being filled in the two gap
Sandwich structure connection.
Further, the metal mesh sheet is copper, iron, manganese, zinc, aluminium, gold, silver, titanium, one or more in magnesium mesh sheet.
Further, the metal mesh sheet is copper mesh piece.
Further, the bonding material is the compound bonding material of graphene.
Further, the compound binding material of the graphene is made of macromolecule resin and graphene.
Further, the mass ratio of the macromolecule resin and graphene is 1:1-2:1.
Further, the macromolecule resin is one or more in thermosetting epoxy resin, rubber-type resin.
Further, described to be selected from polyimides heterocyclic polymer resin, epoxy-polysulfur type from thermosetting epoxy resin
One or both of resin；The rubber-type resin is room temperature vulcanized silicone rubber.
Further, the penstock material is one or more in 304 stainless steels, Ti, Ta, Cu, Cr.
Further, the target is one or more in ceramics, alloy, high pure metal.
Further, the target be selected from ITO, AZO, GZO, IGZO, ZnO, TZO, CIGS, MoNb, MoTa, CuGa,
It is one or more in TiW, Ag, Mo, Si, SiC.
Further, the target both ends angles the 0.5-1 of falling C.
Further, the target inner wall and penstock outer wall gap are 0.2-0.5mm.
The present invention also provides a kind of preparation methods for the rotary target material bearing high power sputtering, include the following steps：
(1) penstock and target, drying, it is ensured that penstock and target material surface are spare without greasy dirt are cleaned；
(2) penstock is horizontally arranged, then metal mesh sheet is wrapped in penstock, it is spare；Then in the inner surface of target
One layer of metal mesh sheet is served as a contrast, it is spare；
(3) the compound bonding material of graphene is sufficiently mixed, is brushed in the penstock surface and target got ready in step (2)
Then hole surface is sleeved on target in penstock from one end, fixed；
(4) bonding material solidification to get.
Further, penstock and target clean 15-20min using supersonic wave cleaning machine in the step (1), are used after drying
Absolute ethyl alcohol wipes penstock and target material surface, it is ensured that material surface is without greasy dirt.
Further, metal mesh sheet thickness 0.1-0.15mm, wide 10-15cm in the step (2).
Further, target material surface and end face high temperature gummed tape cover to prevent the pollution of bonding solder in the step (2).
Further, target inner wall described in the step (3) and penstock outer wall gap are 0.3-0.4mm.The choosing in gap
Select that target during can facilitating bonding can be smoothly sleeved in penstock and conference is crossed in gap, target is under its own gravity
It can drop, target is caused the phenomenon that decentraction occur with penstock.
Further, in the step (3), when the target is 2 or more, gap is 0.3- between target and target
0.5mm uses polytetrafluoroethylene (PTFE) ring plate fixed interval (FI).
Further, curing is the target obtained in heating stepses (3) in the step (4) and penstock, cooling are
.Or the curing is：The target and penstock obtained in step (3), at 30-35 DEG C stand 45-50h to get.
Further, the target and stainless steel penstock that set installs in the step (4) are heated to 50-150 DEG C, keep
0.5-5 hours, the tetrafluoroethene ring plate between the high temperature gummed tape of target material surface and adjacent target is cleaned up, bonding is calculated and completed.
Beneficial effects of the present invention：
(1) individually penstock and target need not be heated during bonding of the present invention, need not more heats fusing bonding material
Material, can carry out at room temperature, and convenient for manual operations, work efficiency is high.Conventional indium bonding method makes the rotation of a 3897mm long
Turn target and need 10 hours, is only needed using the method for the invention 5 hours.
(2) the bonding material used in the present invention and metal material and ceramic material all have a good cementability, when bonding
It need not be brushed using ultrasonic equipment, material will not be atomized, and will not be volatilized, because harmless to environment and human body, ring
It ensures safety.
(3) rotary target of conventional indium bonding is just limited by indium fusing point low (156.6 DEG C), what target can be born when in use
Indium will melt and cause to miss the target when sputtering power commonly reaches 10KW/M or more；And use method bonding of the present invention
The sputtering power that rotary target material can be born can reach 18KW/M or more, and bonding material will not be melted or be decomposed, and not will produce de-
Target splits the problems such as target and dross, fully meets the needs of current high-power coating process, greatly improve the efficiency of plated film with
Quality.
(4) there is metal mesh sheet to be mingled with therebetween in the bonding material filled between penstock and target gap, form sandwich knot
Structure increases the uniformity of transverse conductance heat conduction between target and penstock, target table caused by capable of effectively mitigating conductive and heat-conductive unevenness
Face dross and target is breakdown and target problems of crack.
(5) graphene composite material that uses of the present invention, it is at low cost, performance is high, instead of traditional phosphide material as bonding material
Material significantly reduces production cost, avoids indium to environmental danger, simultaneously because not having to high temperature melt, greatly reduces production
Energy consumption.
Description of the drawings
Fig. 1 is the structural schematic diagram of rotary target material
The sandwich structure 3- palladium material 4- tetrafluoroethene ring plate 5- heating devices of 1- penstock 2- metal mesh sheets composition
Specific implementation mode
Embodiment 1
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including stainless steel penstock 1 and fixing sleeve
It is connected on 12 section AZO ceramic targets 3 of 1 outer wall of stainless steel penstock, the wherein 3 both ends angle of falling C0.5 of AZO targets.The stainless steel penstock
1 passes through the sandwich structure 2 of the bonding material and metal mesh sheet composition that are filled in the two gap with the AZO ceramic targets 3
Connection, 3 inner wall of AZO ceramic targets are 0.35mm with 1 outer wall gap of stainless steel penstock, and tetrafluoro is used between target 3 and target 3
Ethylene ring plate 4 separates
Wherein, the metal mesh sheet is copper mesh piece.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.5:1 composition.
Wherein, the macromolecule resin is polyimides heterocyclic polymer resin.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) it chooses stainless steel penstock 1 and 12 and saves AZO ceramic targets 3, supersonic wave cleaning machine cleans penstock and AZO ceramic targets
3 15min of material wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 15cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；AZO ceramic targets 3, to target
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in 3 outer surface of material and end face；
(3) the brush graphene composite material on stainless steel penstock surface and target inner wall, is then set to penstock 1 by target 3
On, 3 inner wall of target is 0.35mm with 1 outer wall gap of penstock；
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source 5 and heated to 1 inner wall of penstock, heating
Temperature is 100 DEG C, is kept for 2 hours.Turn off heating source 5, is revolved to get to bonding formula magnetron sputtering until target 3 is cooled to room temperature
Turn target.
Wherein, the long 3191mm of target being prepared is completed for 4 hours when sharing including being heating and curing the time.
Reach 18.5KW/M using power, target is intact, no breakdown, cracking, the problems such as missing the target.
Embodiment 2
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including stainless steel penstock 1 and fixing sleeve
It is connected on 3 section TZO ceramic targets 3 of 1 outer wall of stainless steel penstock, the wherein 3 both ends angle of falling C0.5 of TZO targets.The stainless steel penstock 1
Connected by the sandwich structure 2 of the bonding material and metal mesh sheet composition that are filled in the two gap with the TZO ceramic targets 3
It connects, 3 inner wall of TZO ceramic targets is 0.35mm with 1 outer wall gap of stainless steel penstock, and tetrafluoro second is used between target 3 and target 3
Alkene ring plate 4 separates.
Wherein, the metal mesh sheet is aluminium net piece.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.5:1 composition.
Wherein, the macromolecule resin is polyimides heterocyclic polymer resin.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) it chooses stainless steel penstock 1 and 3 and saves TZO ceramic targets 3, supersonic wave cleaning machine cleans penstock and TZO ceramic targets
3 20min wipe penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 15cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；TZO ceramic targets 3, to target
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in 3 outer surface of material and end face；
(3) the brush graphene composite material on stainless steel penstock surface and target inner wall, is then set to penstock 1 by target 3
On, 3 inner wall of target is 0.35mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, and ring plate is thick
0.4mm。
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source 4 and heated to 1 inner wall of penstock, heating
Temperature is 80 DEG C, is kept for 3 hours.Turn off heating source 5, is rotated to get to bonding formula magnetron sputtering until target 3 is cooled to room temperature
Target.
Wherein, the long 850mm of target being prepared, including being heating and curing the time, 4 hours when sharing.
Reach 18KW/M using power, target is intact, no breakdown, cracking, the problems such as missing the target.
Embodiment 3
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including stainless steel penstock 1 and fixing sleeve
It is connected on 5 section metal Ag targets 3 of 1 outer wall of stainless steel penstock, the wherein 3 both ends angle of falling C1 of Ag targets.The stainless steel penstock 1 and institute
It states Ag targets 3 to connect by the sandwich structure 2 of the bonding material and metal mesh sheet composition that are filled in the two gap, the Ag
3 inner wall of target is 0.35mm with 1 outer wall gap of stainless steel penstock, is separated with tetrafluoroethene ring plate 4 between target 3 and target 3.
Wherein, the metal mesh sheet is iron net sheet.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
2:1 composition.
Wherein, the macromolecule resin is room temperature vulcanized silicone rubber.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) it chooses stainless steel penstock 1 and 5 and saves metal Ag targets 3, supersonic wave cleaning machine cleans penstock and Ag targets
318min wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 15cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；Metal Ag targets 3, to target
High temperature gummed tape is pasted in 3 outer surfaces and end face, and inner wall carries on the back one layer of metal mesh sheet, thickness 0.1mm；
(3) the brush graphene composite material on stainless steel penstock surface and target inner wall, is then set to penstock 1 by target 3
On, 3 inner wall of target is 0.35mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, and ring plate is thick
0.4mm。
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source 5 and heated to 1 inner wall of penstock, heating
Temperature is 130 DEG C, is kept for 1 hour.Turn off heating source 5, is revolved to get to bonding formula magnetron sputtering until target 3 is cooled to room temperature
Turn target.
Wherein, the long 1500mm of target being prepared, including being heating and curing the time, totally 2 hours bondings are completed.
Reach 20KW/M using power, target is intact, no breakdown, dross, the problems such as missing the target.
Embodiment 4
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including Cu penstocks 1 and it is fixedly attached to
12 section ZnO target materials 3 of 1 outer wall of Cu penstocks, the wherein 3 both ends angle of falling C1 of ZnO target material.The Cu penstocks 1 are logical with the ZnO target material 3
The sandwich structure 2 for crossing the bonding material being filled in the two gap and metal mesh sheet composition connects, 3 inner wall of ZnO target material
It is 0.30mm with 1 outer wall gap of Cu penstocks, is separated with tetrafluoroethene ring plate 4 between target 3 and target 3.
Wherein, the metal mesh sheet is copper mesh piece.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.6:1 composition.
Wherein, the macromolecule resin is room temperature vulcanized silicone rubber.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) it chooses stainless steel penstock 1 and 12 and saves ZnO target material 3, supersonic wave cleaning machine cleans penstock and ZnO target material 3
20min wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 10cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；ZnO target material 3, to target 3 outside
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in surface and end face；
(3) the brush graphene composite material on stainless steel penstock surface and target inner wall, is then set to penstock 1 by target 3
On, 3 inner wall of target is 0.30mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, and ring plate is thick
0.3mm。
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source 5 and heated to 1 inner wall of penstock, heating
Temperature is 50 DEG C, is kept for 5 hours.Turn off heating source 5, is rotated to get to bonding formula magnetron sputtering until target 3 is cooled to room temperature
Target.
Wherein, the long 3191mm of target being prepared, including being heating and curing the time, 7 hours when sharing.
Reach 20KW/M using power, target is intact, no cracking, breakdown, dross, the problems such as missing the target.
Embodiment 5
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including Ti penstocks 1 and it is fixedly attached to
8 section Si targets 3 of 1 outer wall of Ti penstocks, the wherein 3 both ends angle of falling C0.5 of Si targets.The Ti penstocks 1 pass through with the Si targets 3
The sandwich structure 2 for bonding material and the metal mesh sheet composition being filled in the two gap connects, 3 inner wall of Si targets and Ti
1 outer wall gap of penstock is 0.40mm, is separated with tetrafluoroethene ring plate 4 between target 3 and target 3.
Wherein, the metal mesh sheet is zinc mesh sheet.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1:1 composition.
Wherein, the macromolecule resin is room temperature vulcanized silicone rubber.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) Ti penstocks 1 and 8 are chosen and save Si targets 3, supersonic wave cleaning machine cleans penstock and 3 20min of Si targets, after drying
Penstock outer surface and target endoporus are wiped with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
(the wherein wide 12cm of metal mesh sheet, thick 0.1mm, it is 5cm often to enclose metal mesh sheet lap width to mesh sheet；Si targets 3, to 3 appearance of target
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in face and end face；
(3) target 3, is then set in penstock 1, target by the brush graphene composite material on Ti penstocks surface and target inner wall
3 inner wall of material is 0.40mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, ring plate thickness 0.5mm.
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source 5 and heated to 1 inner wall of penstock, heating
Temperature is 150 DEG C, is kept for 0.5 hour.Turn off heating source 5, until target 3 is cooled to room temperature to get to bonding formula magnetron sputtering
Rotary target material.
Wherein, the long 850mm of target being prepared, including being heating and curing the time, 1.5 hours when sharing.
Reach 15KW/M using power, target is intact, no cracking, breakdown, the problems such as missing the target.
Embodiment 6
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including Cr penstocks 1 and it is fixedly attached to
4 section Mo targets 3 of 1 outer wall of Cr penstocks, the wherein 3 both ends angle of falling C0.5 of Mo targets.The Cr penstocks 1 pass through with the Mo targets 3
The sandwich structure 2 for bonding material and the metal mesh sheet composition being filled in the two gap connects, 3 inner wall of Mo targets and Cr
1 outer wall gap of penstock is 0.40mm, is separated with tetrafluoroethene ring plate 4 between target 3 and target 3.
Wherein, the metal mesh sheet is aluminium net piece.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.5:1 composition.
Wherein, the macromolecule resin is epoxy-polysulfur type resin.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) Cr penstocks 1 and 4 are chosen and save Mo targets 3, supersonic wave cleaning machine cleans penstock and 3 15min of Mo targets, after drying
Penstock outer surface and target endoporus are wiped with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 10cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；Mo targets 3, to target 3 outside
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in surface and end face；
(3) target 3, is then set in penstock 1, target by the brush graphene composite material on Cr penstocks surface and target inner wall
3 inner wall of material is 0.40mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, ring plate thickness 0.4mm.
(4) start runing rest, rotary speed is 5 revs/min, 35 DEG C, keeps splashing to get to bonding formula magnetic control for 8 hours
Penetrate rotary target material.
Wherein, the long 1000mm of target being prepared, 9 hours used times complete.
Reach 20KW/M using power, target is intact, no cracking, breakdown, the problems such as missing the target.
Embodiment 7
As shown in Figure 1, nation's formula magnetron sputtering rotary target material of the present invention, including stainless steel penstock 1 and fixing sleeve
It is connected on 6 section IGZO targets 3 of 1 outer wall of stainless steel penstock, the wherein 3 both ends angle of falling C1 of IGZO targets.The stainless steel penstock 1 and institute
IGZO targets 3 are stated to connect by the sandwich structure 2 of the bonding material and metal mesh sheet composition that are filled in the two gap, it is described
3 inner wall of IGZO targets and 1 outer wall gap of stainless steel penstock are 0.35mm, between target 3 and target 3 with tetrafluoroethene ring plate 4 every
It opens.
Wherein, the metal mesh sheet is copper mesh piece.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.5:1 composition.
Wherein, the macromolecule resin is epoxy-polysulfur type resin.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) it chooses stainless steel penstock 1 and 6 and saves IGZO targets 3, supersonic wave cleaning machine cleans penstock and IGZO targets
320min wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock 1 is horizontal fixed on runing rest, then metal is wound on 1 outer wall of stainless steel penstock
Mesh sheet (the wherein wide 15cm of metal mesh sheet, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；IGZO targets 3, to target 3
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm are pasted in outer surface and end face；
(3) the brush graphene composite material on stainless steel penstock surface and target inner wall, is then set to penstock 1 by target 3
On, 3 inner wall of target is 0.35mm with 1 outer wall gap of penstock；Tetrafluoroethene ring plate 4 separates between target 3 and target 3, and ring plate is thick
0.4mm。
(4) start runing rest, rotary speed is 5 revs/min, and 30 DEG C stand 50h and revolved to get to bonding formula magnetron sputtering
Turn target.
Wherein, the long 1640mm of target being prepared, 52 hours used times complete.
Reach 15KW/M using power, target is intact, no cracking, breakdown, the problems such as missing the target.
Comparative example 1 replaces target and preparation method thereof prepared by graphene composite material with indium
In addition to bonding material is indium, remaining is the same as embodiment 1.
Nation's formula magnetron sputtering rotary target material described in this comparative example, including stainless steel penstock and it is fixedly attached to stainless steel
12 section AZO ceramic targets of penstock outer wall, wherein the AZO targets both ends angle of falling C0.5.The stainless steel penstock and AZO ceramics
Target is connected by the bonding material being filled in the two gap with the sandwich structure that metal mesh sheet forms, the AZO ceramics
Target inner wall is 0.85mm with stainless steel penstock outer wall gap, is separated with tetrafluoroethene ring plate 4 between target 3 and target 3.
Wherein, the metal mesh sheet is copper mesh piece.
Wherein, the bonding material is indium.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) stainless steel penstock and 12 section AZO ceramic targets are chosen, supersonic wave cleaning machine cleans penstock and AZO ceramic targets
15min wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock is fixed vertically, metal mesh sheet (wherein metal mesh is then wound on stainless steel penstock outer wall
Piece wide 15cm, thick 0.1mm), it is 5cm often to enclose metal mesh sheet lap width；AZO ceramic targets paste target outer surface and end face
High temperature gummed tape, one layer of metal mesh sheet of interior wall liner, thickness 0.1mm；
(3) steel pipe and target are heated respectively, then the brush indium on outer surface of steel tube and target inner wall, form soakage layer, then
Merogenesis is sleeved on target on stainless steel tube, and target inner wall is 0.85cm with penstock outer wall gap.
(4) solution of indium is injected to gap between target and penstock, stands cooling, indium is made to solidify,.
Wherein, the long 3191mm of target being prepared, including being heating and curing the time, 10 hours when sharing.
Reach 13KW/M using power, target is intact, but the problems such as indium is melted out, misses the target occurs.
The target and preparation method thereof of the not no sandwich structure of comparative example 2
On the basis of embodiment 1, it is not provided with sandwich structure,
Nation's formula magnetron sputtering rotary target material described in this comparative example, including stainless steel penstock and it is fixedly attached to stainless steel
12 section AZO ceramic targets of penstock outer wall, wherein the AZO targets both ends angle of falling C0.5.The stainless steel penstock 1 and AZO makes pottery
Bonding material is filled in porcelain target gap, the AZO ceramic targets inner wall is 0.35mm, target with stainless steel penstock outer wall gap
It is separated with tetrafluoroethene ring plate 4 between 3 and target 3.
Wherein, the bonding material is the compound bonding material of graphene, by macromolecule resin and graphene according to mass ratio
1.5:1 composition.
Wherein, the macromolecule resin is polyimides heterocyclic polymer resin.
The preparation method of above-mentioned bonding formula magnetron sputtering rotary target material, includes the following steps：
(1) stainless steel penstock and 12 section AZO ceramic targets are chosen, supersonic wave cleaning machine cleans penstock and AZO ceramic targets
15min wipes penstock outer surface and target endoporus after drying with absolute ethyl alcohol；
(2) stainless steel penstock level is fixed on runing rest；AZO ceramic targets paste target outer surface and end face
High temperature gummed tape；
(3) target, is then set in penstock by the graphitization alkene composite material on stainless steel penstock surface and target inner wall,
Target inner wall is 0.35mm with penstock outer wall gap；
(4) start runing rest, rotary speed is 5 revs/min, and starts heating source and heated to penstock inner wall, heating temperature
Degree is 100 DEG C, is kept for 2 hours.Turn off heating source, until target is cooled to room temperature to get to bonding formula magnetron sputtering rotary target
Material.
Wherein, the long 3191mm of target being prepared, including being heating and curing the time, 4 hours when sharing.
Reach 15KW/M using power, target 2 sections occurs and cracks, at three the problems such as electric arc sparking.
Above-mentioned detailed description is illustrating for one of them possible embodiments of the present invention, the embodiment not to
The scope of the claims of the present invention is limited, all equivalence enforcements or change without departing from carried out by the present invention are intended to be limited solely by the technology of the present invention
In the range of scheme.
Claims (10)
1. a kind of rotary target material bearing high power sputtering, which is characterized in that the target includes penstock and is fixedly attached
One in penstock outer wall saves target；The penstock and the target pass through the bonding material and metal mesh that both are filled in gap
The sandwich structure connection of piece composition.
2. the rotary target material according to claim 1 for bearing high power sputtering, which is characterized in that the bonding material is
The compound bonding material of graphene.
3. the rotary target material according to claim 2 for bearing high power sputtering, which is characterized in that the graphene is compound
Bonding material is made of macromolecule resin and graphene.
4. the rotary target material according to claim 1 for bearing high power sputtering, which is characterized in that the metal mesh sheet choosing
From one or more in copper, iron, manganese, zinc, aluminium, gold, silver mesh sheet.
5. the rotary target material according to claim 1 for bearing high power sputtering, which is characterized in that the penstock material choosing
From one or more in 304 stainless steels, Ti, Ta, Cu, Cr.
6. the rotary target material according to claim 1 for bearing high power sputtering, which is characterized in that the target is selected from pottery
It is one or more in porcelain, alloy, high pure metal.
7. the rotary target material according to claim 6 for bearing high power sputtering, which is characterized in that the target is selected from
It is one or more in ITO, AZO, GZO, IGZO, ZnO, TZO, CIGS, MoNb, MoTa, CuGa, TiW, Ag, Mo, Si, SiC.
8. the rotary target material according to claim 1 for bearing high power sputtering, which is characterized in that fall at the target both ends
The angles C 0.5-1.
9. it is according to claim 1 bear high power sputtering rotary target material, which is characterized in that the target inner wall with
Penstock outer wall gap is 0.2-0.5mm.
10. a kind of claim 1-9 any one of them can bear high power sputtering rotary target material preparation method, including with
Lower step：
(1) penstock and target, drying, it is ensured that penstock and target material surface are spare without greasy dirt are cleaned；
(2) penstock is horizontally arranged, then metal mesh sheet is wrapped in penstock, it is spare；Then in the inner surface lining of target one
Layer metal mesh sheet, it is spare；
(3) the compound bonding material of graphene is sufficiently mixed, brushes the penstock surface got ready in step (2) and target endoporus table
Then face is sleeved on target in penstock from one end, fixed；
(4) bonding material solidification to get.
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| CN110408897A (en) * | 2019-08-13 | 2019-11-05 | 北京航大微纳科技有限公司 | A kind of vertical binding device and binding method of rotary target material |
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| WO2020236396A1 (en) * | 2019-05-22 | 2020-11-26 | Sci Engineered Materials, Inc. | High efficiency rotatable sputter target |
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