CN100538198C - The film plating process of the plate core of solar flat-board heat collector and thermal-arrest plate selective absorbing film thereof - Google Patents

The film plating process of the plate core of solar flat-board heat collector and thermal-arrest plate selective absorbing film thereof Download PDF

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CN100538198C
CN100538198C CNB2008100185375A CN200810018537A CN100538198C CN 100538198 C CN100538198 C CN 100538198C CN B2008100185375 A CNB2008100185375 A CN B2008100185375A CN 200810018537 A CN200810018537 A CN 200810018537A CN 100538198 C CN100538198 C CN 100538198C
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absorbing film
arrest plate
thermal
copper foil
selective absorbing
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CN101240944A (en
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夏建业
郭廷玮
杨纪忠
汤留庚
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CHANGZHOU BOSHI SOLAR ENERGY TECHNOLOGY Co Ltd
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CHANGZHOU BOSHI SOLAR ENERGY TECHNOLOGY Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y02E10/44—Heat exchange systems

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Abstract

The invention discloses a kind of plate core of solar flat-board heat collector and the film plating process of thermal-arrest plate selective absorbing film thereof, its plate core is welded to form by Copper Foil thermal-arrest plate and the copper fluid media (medium) pipe that is laid in thermal-arrest plate reverse side, being furnished with absorbing film in the positive plating of thermal-arrest plate, is that TiNxOy titanium oxynitrides selective absorbing film is a principal character with its described absorbing film.Have rational in infrastructure, characteristics such as good and absorptivity height of heat exchange effect.Its film plating process is, adopts the two target vacuum sputtering coating machines of direct current, is base material with Copper Foil thermal-arrest plate, and the titanium target is a negative electrode, handles according to Copper Foil thermal-arrest plate is positive successively with it; The oven dry of Copper Foil thermal-arrest plate; Oven dry Copper Foil thermal-arrest plate places in the coating chamber, and coating chamber vacuumizes; Adopt Ar argon gas bombardment Copper Foil thermal-arrest plate front, implement the secondary cleaning; Connect direct current for the titanium target, fill N, O gas simultaneously, forming TiNxOy titanium oxynitrides selective absorbing film through reaction is principal character.Has the technology advanced person, characteristics such as described thermal-arrest plate and selective absorbing film bonding intensity are strong, and coating is even, and surfacing and absorptivity height and emissivity are little.

Description

The film plating process of the plate core of solar flat-board heat collector and thermal-arrest plate selective absorbing film thereof
Technical field
The present invention relates to a kind of plate core of solar flat-board heat collector and the film plating process of thermal-arrest plate selective absorbing film thereof, belong to solar heat switching equipment technology.
Background technology
The alleged selective absorbing film of the present invention is meant and can effectively selects to absorb sun incident energy, and the little Ti N of the heat radiation of itself xO yThe titanium oxynitrides selective absorbing film.
The plate core thermal-arrest plate of the solar flat-board heat collector of prior art adopts TxT coating as its absorbing film mostly, and its absorptivity reaches as high as 92%, but its emissivity is up to 30～40%.The chemical plating of employing chromium process plating cloth absorbing film is also arranged, but because of its technical process contaminated environment, through stopping employing.Aluminium/nitrogen aluminium plated film though be successfully applied to the vacuum solar heat collector for many years, studies show that, this plated film can not use under hot conditions more than 300 ℃ for a long time, can not use for a long time under antivacuum hot conditions.And the plate core of described prior art, very unreasonable because of its structure, and directly influence the Heat-collecting effect of solar flat-board heat collector.
Chinese patent publication number CN 88101654A discloses a kind of titanium oxynitrides plated film.It is to be used for making that visible light passes through in the sunlight, and reflective infrared and far red light.This plated film mainly is used in heat-reflecting glass or sunlight control is on glass.
The also useful titanium oxynitrides of prior art is as the plated film of electronic circuit board, but its purpose is to stop the diffusion of copper.
Scientific experiment proves that the solar radiation of wavelength＜30nm is almost all absorbed by ozone, wavelength〉solar radiation of 250nm, most of by H 2O and CO 2Absorb.And effective absorbing wavelength solar radiation in 30～250nm scope, the height that is used for solar flat-board heat collector plate core thermal-arrest plate absorbs the titanium oxynitrides selective absorbing film and the film plating process thereof of low emission, and not see so far have report.
Summary of the invention
The present invention aims to provide the plate core of the low solar flat-board heat collector of launching of a kind of high absorption and the film plating process of thermal-arrest plate selective absorbing film thereof, with the Heat-collecting effect of effective raising solar flat-board heat collector.
The present invention realizes that the conception of its purpose is, the structure of existing plate core is improved, with the Heat-collecting effect of further raising thermal-arrest plate; And providing a kind of simultaneously can effectively select the selective absorbing film of absorbing wavelength solar radiation in 30～250nm scope and take the magnetron sputtering mode to implement the film plating process of described selective absorbing film, substitute the absorbing film of prior art, and effectively guarantee coating quality, with its absorptivity of further raising and its emissivity of reduction, the absorptivity that makes the thermal-arrest plate is risen to more than 92% below 92% by prior art, thereby further improves the Heat-collecting effect of solar flat-board heat collector.
Because above-mentioned conception, the technical scheme of the plate core of solar flat-board heat collector of the present invention is:
A kind of plate core of solar flat-board heat collector, be welded to form by Copper Foil thermal-arrest plate and the copper fluid media (medium) pipe that is laid in thermal-arrest plate reverse side, be furnished with absorbing film in the plating of the front of thermal-arrest plate, its innovative point is, described absorbing film is can effectively select to absorb sun incident energy and the little Ti N of its heat radiation xO yThe titanium oxynitrides selective absorbing film.In 30～250nm scope and the solar radiation energy its absorptivity 〉=92% with effective absorbing wavelength.
The preferred described selective absorbing film of the present invention is Ti N 0.70～1.0O 1.0～1.4The titanium oxynitrides selective absorbing film, i.e. Ti:N:O=1:0.7～1.0:1.0～1.4, described ratio is Ti, N, the molecular wt ratio of O.The present invention does not get rid of described Ti, N, the Ti N outside the O molecular wt ratio xO yThe titanium oxynitrides selective absorbing film.This be because it absorptivity all can 〉=92%.
The particularly preferred described selective absorbing film of the present invention is TiN 0.88O 1.32The titanium oxynitrides selective absorbing film.
The thickness of the preferred described selective absorbing film of the present invention is in 90～100nm scope.
The present invention also advocates the surface at described selective absorbing film, and plating is furnished with the SiO that is used for reducing emissivity and makes its surface ceramic deposition 2Diaphragm.Because SiO 2The existence of diaphragm can further reduce the emissivity of described selective absorbing film and improve the bonding intensity of described selective absorbing film and Copper Foil, and heat-resisting quantity and moisture-proof, and is convenient to its surface is cleaned.
The preferred described SiO of the present invention 2The thickness of diaphragm is in 90～100nm scope.
The welding of thermal-arrest plate of the present invention and fluid media (medium) pipe can be the welding that the driving fit of thermal-arrest plate is coated on the fluid media (medium) tube-surface, or the thermal-arrest plate contacts welding with fluid media (medium) pipe bar line.With regard to its heat exchange effect, described clad welded obviously is better than bar line contact welding.And with regard to preparation technology, because the copper thickness of described thermal-arrest plate is thinner, the thickness of being recommended is in 0.2～0.3mm scope, and the length of thermal-arrest plate and width be generally 2000 * 200mm, thereby the technology that Copper Foil coats the fluid media (medium) pipe is wanted complexity a bit relatively.However, the present invention still recommends the clad welded structure.And described welding advocates to adopt ultrasonic bonding.
After technique scheme was implemented, plate cored structure of the present invention was reasonable, and heat exchange effect is good, and especially owing to adopt described selective absorbing film to cover diaphragm with adding, its absorptivity can meet or exceed 96%, and emissivity is lower than 4%.Compared with the prior art, plate core of the present invention has outstanding substantive distinguishing features and marked improvement.
A kind of technical scheme of plating the thermal-arrest plate selective absorbing film method of cloth solar flat-board heat collector plate core as previously discussed of the present invention is: adopt the two target vacuum sputtering coating machines of direct current, with described Copper Foil thermal-arrest plate is base material, the titanium target is a negative electrode, and its innovative point is, carries out according to following steps successively:
A. Copper Foil thermal-arrest plate is positive handles; Remove the greasy dirt and the oxide skin in Copper Foil front;
B. Copper Foil thermal-arrest plate oven dry;
C. will dry Copper Foil thermal-arrest plate and place in the described coating machine coating chamber, and coating chamber vacuumizes;
D. fill the Ar argon gas to vacuum chamber, and connect direct current for Copper Foil thermal-arrest plate, positive remaining oxide skin of Copper Foil thermal-arrest plate and the gas that adheres to are removed in bombardment Copper Foil thermal-arrest plate front;
Connect direct current e. for the titanium target, the titanium target plays the target sputter, fills N, O gas simultaneously, and Ti ion and N, O react and generate Ti N xO yTitanium oxynitrides, and deposition is bonded in Copper Foil thermal-arrest plate front and forms Ti N xO yThe titanium oxynitrides selective absorbing film.
The present invention advocates also to be included in described Ti N xO yTitanium oxynitrides selective absorbing film surface plating cloth SiO 2Diaphragm; Described SiO 2The plating cloth method of diaphragm, be with quartzy target as second negative electrode, be right after the e step, connect direct current for second negative electrode, and in coating chamber, fill Ar, O gas; Quartzy target plays the target sputter; And deposition is bonded in described Ti N xO yTitanium oxynitrides selective absorbing film surface forms SiO 2Diaphragm; Perhaps under the above condition, as second negative electrode, silicon target plays the target sputter with silicon target, and Si and O react and generate SiO 2And deposition is bonded in described Ti N xO yTitanium oxynitrides selective absorbing film surface forms SiO 2Diaphragm.Because the former cost is lower, latter's cost is higher, thereby in concrete enforcement, can select to adopt according to actual conditions.
The present invention contrasts by repetition test, and preferred described a step Copper Foil thermal-arrest plate is positive to be handled, and is earlier with the NaOH of content 10%, removes greasy dirt, and with the cleaning of thermion water, and then is 10～15%H with content 2SO 4Scale removal, and use cold water flush; Described b step Copper Foil thermal-arrest plate oven dry is to use clean heated-air circulation oven, under 70～80 ℃ of temperature conditions, continues 30～50min and implements the oven dry processing; The vacuum of described c step vacuum chamber is 0.1～1.0 * 10 -2In the Pa scope; Described d step gives galvanic voltage that Copper Foil thermal-arrest plate connected in 600～1200V scope, and electric current is in 30～35A scope; The bombardment clearance time is in 5～10min scope; Described e step gives galvanic voltage that the titanium target connected in 300～350V scope, electric current is in 30～35A scope, described N throughput of filling N, O gas is cumulative to 95～105ml/s by 18～22ml/s, the O throughput is cumulative to 28～32ml/s by 8～12ml/s, and the reaction plated film time can be according to Ti N xO ySelective absorbing film thickness is selected.Under the condition of described technical data, can ensure effectively that described selective absorbing film reaches Ti N xO yBy controlling to adjust the unit interval amount of charging into and the time of described voltage and current and N, O gas, can obtain Ti N 0.70～1.0O 1.0～1.4Titanium oxynitrides selective absorbing film, or TiN 0.88O 1.32The titanium oxynitrides selective absorbing film.。
The present invention advocates to be used for SiO 2The described silicon target of diaphragm plated film is an industrial silicon; Describedly give galvanic voltage that second negative electrode connects in 300～350V scope, electric current is in 30～35A scope; The Ar that is filled, O gas are by Ar gas 65～75%, and the ratio of O gas 25～35% is filled; The reaction plated film time can be according to SiO 2Diaphragm thickness is selected.By the regulation and control of described technological parameter, control SiO 2The thickness of diaphragm.
After technique scheme was implemented, technology advance and operability that film plating process of the present invention had were conspicuous.Especially take the secondary cleaning, thoroughly remove greasy dirt, oxide skin and gas that Copper Foil thermal-arrest plate front is adhered to, can effectively improve the bonding intensity of described selective absorbing film and Copper Foil, and coating is even, surfacing, thereby obviously improved absorptivity, reduced emissivity.
Description of drawings
Fig. 1 is the structural representation of a kind of specific embodiment of plate core of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the structural representation of the another kind of specific embodiment of plate core of the present invention;
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the typical process flow figure of plated film of the present invention;
Fig. 6 is the another kind of process chart of plated film of the present invention;
The specific embodiment
In fact by above given accompanying drawing, can understand that the present invention realizes the technical scheme that its purpose is taked.Below the contrast accompanying drawing can further be understood technical scheme of the present invention by the description of the specific embodiment.
One of specific embodiment is shown in accompanying drawing 1,2.
A kind of plate core of solar flat-board heat collector, be welded to form by Copper Foil thermal-arrest plate 1 and the copper fluid media (medium) pipe 2 that is laid in thermal-arrest plate 1 reverse side, be furnished with absorbing film 3 in the plating of the front of thermal-arrest plate 1, described absorbing film 3 is can effectively select to absorb sun incident energy and the little TiN of its heat radiation (emissivity) 0.70～1.0O 1.0～1.4The titanium oxynitrides selective absorbing film.The thickness of described selective absorbing film 3 is in 90～100nm scope.On the surface of described selective absorbing film 3, also plating is furnished with the SiO that is used for reducing reflection and makes its surface ceramic deposition 2Diaphragm 4, described SiO 2The thickness of diaphragm 4 is in 90～100nm scope.The welding of described thermal-arrest plate 1 and fluid media (medium) pipe 2 is ultrasonic bonding that 1 driving fit of thermal-arrest plate is coated on fluid media (medium) pipe 2 surfaces.Described thermal-arrest plate 1 adopts content〉99% thickness is the refining finish rolling Copper Foil of 0.25mm; Fluid media (medium) pipe 2 adopts Φ 10 * 0.5mm high-purity copper pipe.And earlier with described fluid media (medium) pipe 2, be connected on the reverse side of thermal-arrest plate 1 by supersonic welding after, insert again in the two target vacuum sputtering coating machines of direct current, implement the plating cloth of described selective absorbing film 3.
Two of the specific embodiment is shown in accompanying drawing 3,4.
A kind of plate core of solar flat-board heat collector is not except thermal-arrest plate selective absorbing film 3 surfaces possess SiO 2 Diaphragm 4, and the welding of described thermal-arrest plate 1 and fluid media (medium) pipe 2 are outside the bar line contact ultrasonic bonding; Other is all as one of specific embodiment.Its preparation process is, earlier be processed into Copper Foil thermal-arrest plate cylindric, insert again in the two target vacuum sputtering coating machines of direct current, implement the plating cloth of described selective absorbing film 3, and then plating is furnished with the Copper Foil thermal-arrest plate of described selective absorbing film 3, implement ultrasonic bonding by cutting the back with fluid media (medium) pipe 2.
Three of the specific embodiment, as shown in Figure 5.
A kind of cloth method of the thermal-arrest plate selective absorbing film of solar flat-board heat collector plate core as previously discussed of plating adopts the two target vacuum sputtering coating machines of direct current, is base material with described Copper Foil thermal-arrest plate, and the titanium target is a negative electrode, carries out according to following steps successively:
A. Copper Foil thermal-arrest plate is positive handles; Remove the greasy dirt and the oxide skin in Copper Foil front; Earlier, remove greasy dirt, and with the cleaning of thermion water, and then be 10～15% H with content with the NaOH of content 10% 2SO 4Scale removal, and use cold water flush;
B. Copper Foil thermal-arrest plate oven dry; With the medical heated-air circulation oven of cleaning, under 70～80 ℃ of temperature conditions, continue 30～50min and implement the oven dry processing;
C. will dry Copper Foil thermal-arrest plate and place in the described coating machine coating chamber, and coating chamber vacuumizes; The vacuum of vacuum chamber is 0.1～1.0 * 10 -2In the Pa scope;
D. fill Ar gas to vacuum chamber, and connect direct current for Copper Foil thermal-arrest plate, positive remaining oxide skin of Copper Foil thermal-arrest plate and the gas that adheres to are removed in bombardment Copper Foil thermal-arrest plate front; The galvanic voltage that is led to is 600V, and electric current is 30A; The bombardment clearance time is 8min;
Connect direct current e. for the titanium target; The titanium target plays the target sputter, fills N, O gas simultaneously, and Ti ion and N, O react and generate Ti N 0.88O 1.32Titanium oxynitrides, and deposition is bonded in Copper Foil thermal-arrest plate front and forms Ti N 0.88O 1.32Selective absorbing film.The galvanic voltage of connecting is 300V, and electric current is 30A, and described N throughput of filling N, O gas is cumulative to 95～105ml/s by 18～22ml/s, and the O throughput is cumulative to 28～32ml/s by 8～12ml/s, and the reaction plated film time is according to Ti N 0.88O 1.32Selective absorbing film thickness is selected.Described Ti N 0.88O 1.32The titanium oxynitrides selective absorbing film is that the present invention is preferred.
Also can be included in described Ti N 0.88O 1.32Titanium oxynitrides selective absorbing film surface plating cloth SiO 2Diaphragm; Described SiO 2The plating cloth method of diaphragm, be with quartzy target as second negative electrode, be right after the e step, connect direct current for second negative electrode, and in coating chamber, fill Ar, O gas; Quartzy target plays the target sputter and deposition is bonded in described Ti N 0.88O 1.32yTitanium oxynitrides selective absorbing film surface forms SiO 2Diaphragm.Described to connect galvanic voltage for second negative electrode be 300V, and electric current is 30A; The reaction plated film time is according to SiO 2Diaphragm thickness is selected.
Four of the specific embodiment, as shown in Figure 6.
A kind of cloth method of the thermal-arrest plate selective absorbing film of solar flat-board heat collector plate core as previously discussed of plating is not except comprising plating cloth SiO 2Outside the diaphragm, other are three identical with the specific embodiment all.
Five of the specific embodiment, as shown in Figure 5.
A kind of cloth method of the thermal-arrest plate selective absorbing film of solar flat-board heat collector plate core as previously discussed of plating is except plating cloth SiO 2Diaphragm is to adopt silicon target as second negative electrode, implements outside the sputter plating cloth, and other is all identical with the specific embodiment three.
According to the specific embodiment three, four and five description, by changing described technological parameter, can provide the specific embodiment of a plurality of film plating process, thereby produce at described Ti N 0.70～1.0O 1.0～1.4The many kinds of different molecular weight ratios of Ti, N, O in the scope and the titanium oxynitrides selective absorbing film and the silicon dioxide protective film of multiple different thickness of coating.
Prototype test result of the present invention shows that its absorptivity can reach 96%, and emissivity is below 4%. This is that prior art can not be intended by comparison. The present invention is the solar energy utilization, has developed a kind of advanced high The plate core of flat plate collector of effect. Contrast test result shows, adopts the dull and stereotyped hot water of the sun of plate core of the present invention Device, it gets heat than the heat that gets of prior art, can improve 20～30%, has obtained very significant effect Really.

Claims (10)

1, a kind of plate core of solar flat-board heat collector, be welded to form by Copper Foil thermal-arrest plate (1) and the copper fluid media (medium) pipe (2) that is laid in thermal-arrest plate (1) reverse side, be furnished with absorbing film (3) in the plating of the front of thermal-arrest plate (1), it is characterized in that, described absorbing film (3) is can effectively select to absorb sun incident energy and the little TiN of its heat radiation xO yThe titanium oxynitrides selective absorbing film.
2, the plate core of solar flat-board heat collector according to claim 1 is characterized in that, described selective absorbing film (3) is TiN 0.70～1.0O 1.0～1.4The titanium oxynitrides selective absorbing film.
3, the plate core of solar flat-board heat collector according to claim 2 is characterized in that, described selective absorbing film (3) is TiN 0.88O 1.32The titanium oxynitrides selective absorbing film.
According to the plate core of claim 1 or 2 or 3 described solar flat-board heat collectors, it is characterized in that 4, the thickness of described selective absorbing film (3) is in 90～100nm scope.
5, according to the plate core of claim 1 or 2 or 3 described solar flat-board heat collectors, it is characterized in that, the surface in described selective absorbing film (3), also plating is furnished with the SiO that is used for reducing emissivity and makes its surface ceramic deposition 2Diaphragm (4).
6, the plate core of solar flat-board heat collector according to claim 5 is characterized in that, described SiO 2The thickness of diaphragm (4) is in 90～100nm scope.
7, a kind of method of plating the thermal-arrest plate selective absorbing film of cloth solar flat-board heat collector plate as claimed in claim 1 core, adopting the two target vacuum sputtering coating machines of direct current, is base material with described Copper Foil thermal-arrest plate, and the titanium target is a negative electrode, it is characterized in that, carry out according to following steps successively:
A. Copper Foil thermal-arrest plate is positive handles; Remove the greasy dirt and the oxide skin in Copper Foil front;
B. Copper Foil thermal-arrest plate oven dry;
C. will dry Copper Foil thermal-arrest plate and place in the described coating machine coating chamber, and coating chamber vacuumizes;
D. fill the Ar argon gas to vacuum chamber, and connect direct current for Copper Foil thermal-arrest plate, positive remaining oxide skin of Copper Foil thermal-arrest plate and the gas that adheres to are removed in bombardment Copper Foil thermal-arrest plate front;
Connect direct current e. for the titanium target, the titanium target plays the target sputter, fills N, O gas simultaneously, and Ti ion and N, O react and generate TiN xO yTitanium oxynitrides, and deposition is bonded in Copper Foil thermal-arrest plate front and forms TiN xO yThe titanium oxynitrides selective absorbing film.
8, film plating process according to claim 7 is characterized in that, also is included in described TiN xO yTitanium oxynitrides selective absorbing film surface plating cloth SiO 2Diaphragm; Described SiO 2The plating cloth method of diaphragm, be with quartzy target as second negative electrode, be right after the e step, connect direct current for second negative electrode, and in coating chamber, fill Ar, O gas; Quartzy target plays the target sputter, and deposition is bonded in described TiN xO yTitanium oxynitrides selective absorbing film surface forms SiO 2Diaphragm; Perhaps under the above condition, as second negative electrode, silicon target plays the target sputter with silicon target, and Si and O react and generate SiO 2And deposition is bonded in described TiN xO yTitanium oxynitrides selective absorbing film surface forms SiO 2Diaphragm.
9, film plating process according to claim 7 is characterized in that, described a step Copper Foil thermal-arrest plate is positive to be handled, and is earlier with the NaOH of content 10%, removes greasy dirt, and with the cleaning of thermion water, and then is 10～15% H with content 2SO 4Scale removal, and use cold water flush; Described b step Copper Foil thermal-arrest plate oven dry is to use clean heated-air circulation oven, under 70～80 ℃ of temperature conditions, continues 30～50min and implements the oven dry processing; The vacuum of described c step vacuum chamber is 0.1～1.0 * 10 -2In the Pa scope; Described d step gives galvanic voltage that Copper Foil thermal-arrest plate connected in 600～1200V scope, and electric current is in 30～35A scope; The bombardment clearance time is in 5～10min scope; Described e step gives galvanic voltage that the titanium target connected in 300～350V scope, electric current is in 30～35A scope, described N throughput of filling N, O gas is cumulative to 95～105ml/s by 18～22ml/s, the O throughput is cumulative to 28～32ml/s by 8～12ml/s, and the reaction plated film time can be according to TiN xO ySelective absorbing film thickness is selected.
10, film plating process according to claim 8 is characterized in that, describedly gives galvanic voltage that second negative electrode connects in 300～350V scope, and electric current is in 30～35A scope; The Ar that is filled, O gas are by Ar gas 65～75%, and the ratio of O gas 25～35% is filled; The reaction plated film time can be according to SiO 2Diaphragm thickness is selected.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19620645A1 (en) * 1995-05-22 1996-12-05 Thomas Eisenhammer Selective light wave absorber prodn
CN1360084A (en) * 2001-12-31 2002-07-24 清华大学 Coating for selective absorption of sunlight spectrum
CN201196495Y (en) * 2008-02-21 2009-02-18 常州博士新能源科技有限公司 Plate core of solar flat plate collector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19620645A1 (en) * 1995-05-22 1996-12-05 Thomas Eisenhammer Selective light wave absorber prodn
CN1360084A (en) * 2001-12-31 2002-07-24 清华大学 Coating for selective absorption of sunlight spectrum
CN201196495Y (en) * 2008-02-21 2009-02-18 常州博士新能源科技有限公司 Plate core of solar flat plate collector

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