CN102353165A - Solar flat plate collector board core and manufacturing method thereof - Google Patents
Solar flat plate collector board core and manufacturing method thereof Download PDFInfo
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- CN102353165A CN102353165A CN201110247631XA CN201110247631A CN102353165A CN 102353165 A CN102353165 A CN 102353165A CN 201110247631X A CN201110247631X A CN 201110247631XA CN 201110247631 A CN201110247631 A CN 201110247631A CN 102353165 A CN102353165 A CN 102353165A
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- plate
- thermal
- absorbing film
- target
- arrest
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
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Abstract
The invention discloses a solar flat plate collector board core, which comprises a heat collection board (1) and a copper fluid medium pipe (2) arranged and welded on the reverse surface of the heat collection board (1), wherein an absorption film (3) is plated on the front face of the heat collection board (1); the absorption film (3) is a TiNXOy titanium oxynitride selective absorption film; and the surface of the absorption film (3) is also plated with a silicon dioxide protection film (4). The solar flat plate collector board core disclosed by the invention has the beneficial effects of good absorption rate and low reflection rate.
Description
Technical field
The present invention relates to solar heat switching equipment field, relate in particular to a kind of plate solar collector plate core, specifically be meant a kind of plate solar collector plate core and manufacturing approach thereof.
Background technology
Plate solar collector plate core requires to have attraction rate preferably and lower reflectivity as the permutable core component of the sun.
The plate core thermal-arrest plate of existing solar flat-board heat collector generally adopts TXT coating as its absorbing film, and its absorptivity reaches as high as 92%, but its emissivity is up to 40%; In addition, also have and adopt chemical plating chromium process plating cloth absorbing film, but comparatively serious because of its technical process environmental pollution, and stopped basically adopting; And the aluminium/nitrogen aluminium plated film of extensive use at present can not use under high temperature more than 300 ℃ or antivacuum hot conditions for a long time.In addition, existing plate solar collector plate core is because of its unreasonable structure, and directly influences the Heat-collecting effect of solar flat-board heat collector.
Scientific experiment proves that at present wavelength is almost all absorbed by ozone less than the solar radiation of 30nm; Wavelength is greater than the solar radiation of 250nm, and major part is absorbed by steam and carbon dioxide; The effective absorbing wavelength solar energy that solar radiation then can effectively be absorbed by solar flat-board heat collector plate core thermal-arrest plate in 30～250nm scope.
Summary of the invention
The technical problem that the present invention will solve is that a kind of plate solar collector plate core and manufacturing approach thereof that absorptivity is high, reflectivity is lower is provided.
The technical solution of first technical problem of the present invention is; Following a kind of plate solar collector plate core is provided; Comprise the thermal-arrest plate and lay the copper fluid media (medium) pipe that is welded on thermal-arrest plate reverse side, the front plating of said thermal-arrest plate is furnished with absorbing film, and described absorbing film is TiN
XO
yTitanium oxynitrides selective absorbing film, the surface of described absorbing film also plate and are furnished with silicon dioxide protective film.
After adopting above scheme, the absorbing film that the present invention is coated with is TiN
XO
yThe titanium oxynitrides selective absorbing film, verified according to experiment, TiN
XO
yThe titanium oxynitrides selective absorbing film can effectively select to absorb sunlight wavelength in the luminous energy of 30～250nm light wave and absorptivity greater than 92%, and through at TiN
XO
yTitanium oxynitrides selective absorbing film surface plating cloth silicon dioxide protective film then can effectively reduce reflectivity and be low to moderate 5% below and can prevent thermal-arrest plate surface ceramic deposition, and the absorbing film of the TXT coating making before comparing has absorptivity height, beneficial effect that reflectivity is low.
As preferably, described absorbing film is TiN
0.60～1.0O
1.0～1.5The titanium oxynitrides selective absorbing film.
Preferable, described absorbing film is TiN
0.700
1.48The titanium oxynitrides selective absorbing film.
The preferred selective absorbing film of the present invention is TiN
0.60～1.0O
1.0～1.5Titanium oxynitrides selective absorbing film, i.e. Ti: N: O=1: 0.60～1.0: 1.0～1.5, described ratio is the weight ratio of Ti, N, O atom, adopts the TiN of above ratio
0.60～1.0O
1.0～ 1.5The absorptivity of titanium oxynitrides selective absorbing film can reach more than 92, and absorbing film is TiN
0.70O
1.48The titanium oxynitrides selective absorbing film can reach the absorptivity more than 95%.
As preferably, the thickness of described absorbing film is 45～200nm.
As improvement, the surface of described absorbing film is also plated and is furnished with silicon dioxide protective film, and the thickness of silicon dioxide protective film is 45～200nm.
As preferably, the thickness of described silicon dioxide protective film is 120nm.
The technical solution of second technical problem of the present invention is; According to above-mentioned plate solar collector plate core a kind of plate solar collector plate core, manufacturing method is provided; This method with described thermal-arrest plate as base material; With the titanium target as negative electrode; Adopt the two target vacuum sputtering coating machines of direct current to carry out plated film; May further comprise the steps
A. the thermal-arrest plate is positive handles, and removes positive greasy dirt and oxide skin;
B. the oven dry of thermal-arrest plate is handled;
C. the thermal-arrest plate with oven dry places in the coating machine coating chamber, and coating chamber is vacuumized;
D. applying argon gas in the coating chamber is connected direct current with the thermal-arrest plate, and the front of bombardment thermal-arrest plate is to remove positive remaining oxide skin of thermal-arrest plate and the gas that adheres to;
E. the titanium target is connected direct current, the titanium target plays the target sputter, and while inflated with nitrogen and oxygen, titanium ion and nitrogen, oxygen react and generates TiN
xO
yTitanium oxynitrides and deposition are bonded in the front of thermal-arrest plate and form TiN
XO
yThe titanium oxynitrides selective absorbing film.
As improvement,, may further comprise the steps after the e step as second negative electrode with quartzy target or silicon target,
Connect direct current for second negative electrode, applying argon gas and oxygen play the target sputter with quartzy target or silicon target as second negative electrode in the coating chamber, and react generation silica and deposition of silicon and oxygen is bonded in said TiN
XO
yTitanium oxynitrides selective absorbing film surface forms silicon dioxide protective film.
As preferably, the thermal-arrest plate is positive in the said a step handles, and is earlier with the NaOH of content 10%, removes greasy dirt and with the cleaning of thermion water, and then use content is 10～15% sulfuric acid scale removals, and uses cold water flush;
The oven dry of thermal-arrest plate is to use clean heated-air circulation oven in the said b step, under 70～80 ℃ of temperature conditions, continues 30～50min and implements the oven dry processing;
In the said c step, the vacuum that said coating chamber vacuumizes is 0.3～1.0x10
-2Pa;
The galvanic voltage of being connected for the thermal-arrest plate in the said d step is 600～1200V, and electric current is 30～35A; The bombardment clearance time is 5～10min;
The galvanic voltage that the titanium target is connected in the said e step is 300～380V, and electric current is 30～35A, and the nitrogen flow in said inflated with nitrogen and the oxygen is cumulative to 80～120ml/s by 15～25ml/s, and oxygen flow is cumulative to 20～40ml/s by 5～15ml/s.
As preferably, the galvanic voltage that said second negative electrode is connected is 300～380V, and electric current is 30～35A;
The argon gas that is filled and the ratio of oxygen: argon gas is 60～78%, and oxygen is 22～40%.
Above-mentioned plate solar collector plate core, manufacturing method is through implementing; Film plating process of the present invention has carried out the secondary cleaning to thermal-arrest plate surface; The greasy dirt that Copper Foil thermal-arrest plate front is adhered to, oxide skin etc. have thoroughly been removed; Thereby can effectively improve the bonding firmness of said selective absorbing film and thermal-arrest plate, and have coating evenly, the advantage of surfacing.
Description of drawings
Fig. 1 is the structural representation of plate solar collector plate core of the present invention.
Fig. 2 is the manufacturing approach craft flow chart of the plate solar collector plate core of invention.
Shown in the figure:
1, thermal-arrest plate, 2, copper fluid media (medium) pipe, 3, absorbing film, 4, silicon dioxide protective film.
The specific embodiment
For ease of explanation,, invention plate solar collector plate core and manufacturing approach thereof are elaborated below in conjunction with accompanying drawing:
Shown in accompanying drawing 1, a kind of plate solar collector plate core comprises thermal-arrest plate 1 and lays the copper fluid media (medium) pipe 2 that is welded on thermal-arrest plate 1 reverse side that the front plating of said thermal-arrest plate 1 is furnished with absorbing film 3, and described absorbing film 3 is TiN
0.70O
1.48Titanium oxynitrides selective absorbing film, the thickness of absorbing film 3 are 120nm, and the surface of described absorbing film 3 is also plated and is furnished with silicon dioxide protective film 4, and the thickness of described silicon dioxide protective film 4 is 120nm.
According to above-mentioned plate solar collector plate core, shown in accompanying drawing 2, a kind of manufacturing approach of plate solar collector plate core; As base material, as negative electrode, adopt the two target vacuum sputtering coating machines of direct current to carry out plated film with described thermal-arrest plate 1 with the titanium target; May further comprise the steps
A. thermal-arrest plate 1 is positive handles, and is earlier with the NaOH of content 10%, removes greasy dirt and with the cleaning of thermion water, and then use content is 10～15% sulfuric acid scale removals, and uses cold water flush;
B. 1 oven dry of thermal-arrest plate is handled, and uses clean heated-air circulation oven, under 75 ℃ of temperature conditions, continues 45min enforcement oven dry and handles;
C. the thermal-arrest plate 1 with oven dry places in the coating machine coating chamber, and it is 0.5x10 that coating chamber is evacuated to vacuum
-2Pa;
D. applying argon gas in the coating chamber is connected direct current with thermal-arrest plate 1, and galvanic voltage is 1000V, and electric current is 32A, and the front of bombardment thermal-arrest plate 1 is to remove thermal-arrest plate 1 positive remaining oxide skin and the gas that adheres to, and the bombardment clearance time is 8min;
E. the titanium target is connected direct current; Galvanic voltage is 320V; Electric current is 32A; The titanium target plays the target sputter; While inflated with nitrogen and oxygen; Nitrogen flow in nitrogen and the oxygen is cumulative to 100ml/s by 15ml/s, and oxygen flow is cumulative to 30ml/s by 5ml/s, and titanium ion and nitrogen, oxygen react and generates TiN
xO
yTitanium oxynitrides and deposition are bonded in the front of thermal-arrest plate 1 and form TiN
XO
yThe titanium oxynitrides selective absorbing film.
F. with silicon target as second negative electrode, connect direct current for second negative electrode, galvanic voltage is 320V, electric current is 32A; Applying argon gas and oxygen in the coating chamber, the argon gas that is filled and the ratio of oxygen: argon gas is 75%, and oxygen is 25%, plays the target sputter with silicon target as second negative electrode, and react generation silica and deposition of silicon and oxygen is bonded in said TiN
XO
yTitanium oxynitrides selective absorbing film surface forms silicon dioxide protective film.
In the above-described embodiments, preferred forms of the present invention is described, obviously, under inventive concept of the present invention, still can be made a lot of variations, also can be TiN like described absorbing film 3
0.60～1.0O
1.0～1.5The titanium oxynitrides selective absorbing film is selected; The thickness of and for example said absorbing film 3 also can be selected between 45～200nm; And for example the thickness of described silicon dioxide protective film also can be selected between 45～200nm etc., and described for another example thermal-arrest plate 1 can be Copper Foil thermal-arrest plate and also can be aluminium foil thermal-arrest plate.At this, should illustrate that any change of under inventive concept of the present invention, being made all will fall in protection scope of the present invention.
Claims (10)
1. a plate solar collector plate core comprises that thermal-arrest plate (1) and laying are welded on the copper fluid media (medium) pipe (2) of thermal-arrest plate (1) reverse side, and the front plating of said thermal-arrest plate (1) is furnished with absorbing film (3), and it is characterized in that: described absorbing film (3) is TiN
XO
yTitanium oxynitrides selective absorbing film, the surface of described absorbing film (3) also plate and are furnished with silicon dioxide protective film (4).
2. plate solar collector plate core according to claim 1 is characterized in that: described absorbing film (3) is TiN
0.60～ 1.0O
1.0～1.5The titanium oxynitrides selective absorbing film.
3. plate solar collector plate core according to claim 2 is characterized in that: described absorbing film (3) is TiN
0.70O
1.48The titanium oxynitrides selective absorbing film.
4. according to the described plate solar collector plate of the arbitrary claim of claim 1 to 3 core, it is characterized in that: the thickness of described absorbing film (3) is 45～200nm.
5. plate solar collector plate core according to claim 1 is characterized in that: the thickness of described silicon dioxide protective film (4) is 45～200nm.
6. plate solar collector plate core according to claim 1 is characterized in that: the thickness of described silicon dioxide protective film (4) is 120nm.
7. the manufacturing approach of a plate solar collector plate core according to claim 1 as base material, as negative electrode, adopts the two target vacuum sputtering coating machines of direct current to carry out plated film with the titanium target with described thermal-arrest plate (1), it is characterized in that: may further comprise the steps,
A. thermal-arrest plate (1) is positive handles, and removes positive greasy dirt and oxide skin;
B. thermal-arrest plate (1) oven dry is handled;
C. the thermal-arrest plate (1) with oven dry places in the coating machine coating chamber, and coating chamber is vacuumized;
D. applying argon gas in the coating chamber is connected direct current with thermal-arrest plate (1), and the front of bombardment thermal-arrest plate (1) is to remove positive remaining oxide skin of thermal-arrest plate (1) and the gas that adheres to;
E. the titanium target is connected direct current, the titanium target plays the target sputter, and while inflated with nitrogen and oxygen, titanium ion and nitrogen, oxygen react and generates TiN
xO
yTitanium oxynitrides and deposition are bonded in the front of thermal-arrest plate (1) and form TiN
XO
yThe titanium oxynitrides selective absorbing film.
8. the manufacturing approach of plate solar collector plate core according to claim 7 is characterized in that:, may further comprise the steps after the e step as second negative electrode with quartzy target or silicon target,
Connect direct current for second negative electrode, applying argon gas and oxygen play the target sputter with quartzy target or silicon target as second negative electrode in the coating chamber, and react generation silica and deposition of silicon and oxygen is bonded in said TiN
XO
yTitanium oxynitrides selective absorbing film surface forms silicon dioxide protective film.
9. the manufacturing approach of plate solar collector plate core according to claim 7 is characterized in that:
Thermal-arrest plate (1) is positive in the said a step handles, and is earlier with the NaOH of content 10%, removes greasy dirt and with the cleaning of thermion water, and then use content is 10～15% sulfuric acid scale removals, and uses cold water flush;
Thermal-arrest plate (1) oven dry is to use clean heated-air circulation oven in the said b step, under 70～80 ℃ of temperature conditions, continues 30～50min and implements the oven dry processing;
In the said c step, the vacuum that said coating chamber vacuumizes is 0.3～1.0x 10
-2Pa;
The galvanic voltage of being connected for thermal-arrest plate (1) in the said d step is 600～1200V, and electric current is 30～35A; The bombardment clearance time is 5～10min;
The galvanic voltage that the titanium target is connected in the said e step is 300～380V, and electric current is 30～35A, and the nitrogen flow in said inflated with nitrogen and the oxygen is cumulative to 80～120ml/s by 15～25ml/s, and oxygen flow is cumulative to 20～40ml/s by 5～15ml/s.
10. the manufacturing approach of plate solar collector plate core according to claim 8 is characterized in that,
The galvanic voltage that said second negative electrode is connected is 300～380V, and electric current is 30～35A;
The argon gas that is filled and the ratio of oxygen: argon gas is 60～78%, and oxygen is 22～40%.
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| CN201110247631XA CN102353165A (en) | 2011-08-26 | 2011-08-26 | Solar flat plate collector board core and manufacturing method thereof |
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|---|---|---|---|
| CN201110247631XA CN102353165A (en) | 2011-08-26 | 2011-08-26 | Solar flat plate collector board core and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104034072A (en) * | 2013-03-08 | 2014-09-10 | 中国建筑材料科学研究总院 | Solar spectrum selective absorbing coating, preparation method and application thereof |
| CN104034073A (en) * | 2013-03-08 | 2014-09-10 | 中国建筑材料科学研究总院 | Selective brown solar spectral absorption coating and preparation method and application thereof |
| CN108895678A (en) * | 2018-05-02 | 2018-11-27 | 广东尚而特太阳能有限公司 | A kind of panel solar plate core of efficient heat-collecting and preparation method thereof |
| CN109827340A (en) * | 2019-03-02 | 2019-05-31 | 程玉涵 | A kind of solar energy hot blast hot water two purpose system and intelligent control method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101240944A (en) * | 2008-02-21 | 2008-08-13 | 常州博士新能源科技有限公司 | Solar flat-board heat collector plate core and heat collection plate selective absorption membrane plating method |
| CN202274669U (en) * | 2011-08-26 | 2012-06-13 | 郝立冬 | Solar flat plate collector plate core |
-
2011
- 2011-08-26 CN CN201110247631XA patent/CN102353165A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101240944A (en) * | 2008-02-21 | 2008-08-13 | 常州博士新能源科技有限公司 | Solar flat-board heat collector plate core and heat collection plate selective absorption membrane plating method |
| CN202274669U (en) * | 2011-08-26 | 2012-06-13 | 郝立冬 | Solar flat plate collector plate core |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104034072A (en) * | 2013-03-08 | 2014-09-10 | 中国建筑材料科学研究总院 | Solar spectrum selective absorbing coating, preparation method and application thereof |
| CN104034073A (en) * | 2013-03-08 | 2014-09-10 | 中国建筑材料科学研究总院 | Selective brown solar spectral absorption coating and preparation method and application thereof |
| CN104034072B (en) * | 2013-03-08 | 2016-04-27 | 中国建筑材料科学研究总院 | Coating for selective absorption of sunlight spectrum and preparation method thereof and application |
| CN104034073B (en) * | 2013-03-08 | 2017-07-14 | 中国建筑材料科学研究总院 | Coffee-like solar spectral selective absorbing coating and its preparation method and application |
| CN108895678A (en) * | 2018-05-02 | 2018-11-27 | 广东尚而特太阳能有限公司 | A kind of panel solar plate core of efficient heat-collecting and preparation method thereof |
| CN109827340A (en) * | 2019-03-02 | 2019-05-31 | 程玉涵 | A kind of solar energy hot blast hot water two purpose system and intelligent control method |
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Application publication date: 20120215 |