CN205212780U - Photovoltaic and photothermal integrated assembly - Google Patents
Photovoltaic and photothermal integrated assembly Download PDFInfo
- Publication number
- CN205212780U CN205212780U CN201520939672.9U CN201520939672U CN205212780U CN 205212780 U CN205212780 U CN 205212780U CN 201520939672 U CN201520939672 U CN 201520939672U CN 205212780 U CN205212780 U CN 205212780U
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- Prior art keywords
- heat
- photovoltaic
- layer
- conducting piece
- cover plate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
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Abstract
The utility model is suitable for a solar energy power generation technical field that generates heat discloses a photovoltaic and photothermal integrated assembly, photovoltaic and photothermal integrated assembly includes that frame, encapsulation are in apron, the system of plating of frame one side are in inboard coating film layer, the setting of apron is in heat -conducting piece, the welding of plating membranous layer surface are in the heat -conducting piece is kept away from a plurality of heater blocks of treating of the one side on coating film layer, and fill frame, heat -conducting piece and treat the heat preservation between the heater block. The utility model discloses a set up apron and coating film layer and be used for turning into the electric energy with absorptive sunlight, and the sunlight that the part saw through turns into the heat, sends a plurality of the treat heater blocks of welding in the heat -conducting piece below to by the heat -conducting piece to the material in the heater block is treated in the heating, and the while is at frame, heat -conducting piece and treat fill thermal -insulation layer between the heater block, prevents further that the heat scatters and disappears, makes the partial waste heat of sunlight obtain make full use of.
Description
Technical field
The utility model belongs to solar power generation heating technique field, particularly relates to a kind of photovoltaic and photothermal integral assembly.
Background technology
At present, photovoltaic generation provides a lot of facilities for people, but only uses photovoltaic module to convert solar energy into electrical energy, and can cause photovoltaic module in the process used, waste the part of waste heat of sunlight.Therefore, market has occurred the assembly of photovoltaic and photothermal integral, mostly be crystal silicon solar photovoltaic and photothermal integral assembly, but its complex structure, cost is higher, installs inconvenience.
Utility model content
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, provides a kind of photovoltaic and photothermal integral assembly, and its structure is simple, and takes full advantage of the part of waste heat of sunlight.
The technical solution of the utility model is: provide a kind of photovoltaic and photothermal integral assembly, comprise frame, be encapsulated in the cover plate of described frame side, be coated on film plating layer inside described cover plate, be arranged on the heat-conducting piece on described film plating layer surface, be welded on the multiple to be heated parts of described heat-conducting piece away from the side of described film plating layer, and be filled in described frame, heat-insulation layer between heat-conducting piece and parts to be heated.
Further, described film plating layer comprises the first including transparent conducting oxide layer, the amorphous silicon layer be formed on described first including transparent conducting oxide layer, the second including transparent conducting oxide layer be formed on described amorphous silicon layer, and is formed in the insulating barrier on described second including transparent conducting oxide layer.
Further, described amorphous silicon layer comprises and produces by rf electric field P-type non-crystalline silicon, I type amorphous silicon and the N-type amorphous silicon that glow discharge decomposition gas formed successively.
Further, described first including transparent conducting oxide layer is the one in ITO, FTO, ZnO and AZO; Described second including transparent conducting oxide layer is the one in ITO, FTO, ZnO and AZO.
Preferably, the thickness of described first including transparent conducting oxide layer is 500nm-1000nm.
Further, described insulating barrier is silica coating, and the thicknesses of layers of described insulating barrier is 0-100nm.
Further, described cover plate is toughened glass, and the transmitance of described cover plate is greater than 91.6%.
Further, the side of described frame is formed with limiting section, and described cover plate is connected on described limiting section away from the side of described film plating layer.
Implement a kind of photovoltaic and photothermal integral assembly of the present utility model, there is following beneficial effect: by arranging cover plate and film plating layer for the sunlight of absorption is converted into electric energy, and the sunlight of component permeate is converted into heat, sent to the parts multiple to be heated be welded on below heat-conducting piece by heat-conducting piece, thus the material heated in parts to be heated, simultaneously at frame, filling heat insulating wall between heat-conducting piece and parts to be heated, prevent heat loss further, the part of waste heat of sunlight is fully used.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the photovoltaic and photothermal integral assembly that the utility model embodiment provides;
Fig. 2 is the structural representation of the film plating layer that the utility model embodiment provides;
Fig. 3 is preparation method's flow chart of the photovoltaic and photothermal integral assembly that the utility model embodiment provides;
Fig. 4 is preparation method's flow chart of step S1 in Fig. 3.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
It should be noted that, when element is called as " being fixed on " or " being arranged at " another element, it can directly on another element or may there is centering elements simultaneously.When an element is known as " being connected to " another element, it can be directly connected to another element or may there is centering elements simultaneously.
Also it should be noted that, the orientation term such as left and right, upper and lower in the utility model embodiment, is only relative concept or be reference with the normal operating condition of product each other, and should not be regarded as have restrictive.
As shown in Figure 1, the photovoltaic and photothermal integral assembly that the utility model embodiment provides comprises frame 1, cover plate 2, film plating layer 3, heat-conducting piece 4, parts to be heated 5 and heat-insulation layer 6.Wherein, cover plate 2 is encapsulated in the side of frame 1, and particularly, cover plate 2 is encapsulated in the side that frame 1 has opening.Film plating layer 3 is coated on the inner side of cover plate 2, is namely coated on the side of cover plate 2 towards frame 1.Heat-conducting piece 4 is arranged on the inner side of film plating layer 3, and heat-conducting piece 4 is for heat conduction.Preferably, heat-conducting piece 4 is aluminium sheet.Be welded with multiple parts to be heated 5 at heat-conducting piece 4 away from the side of film plating layer 3, preferably, these parts 5 to be heated import and export water pipes, and in these parts 5 to be heated, circulation has water, and the concrete quantity of parts to be heated 5 is determined according to actual needs.Further preferably, these parts 5 to be heated are made up of Heat Conduction Material, and multiple parts 5 to be heated are welded on the side of heat-conducting piece 4 by Laser Welding.At frame 1, be filled with heat-insulation layer 6 between heat-conducting piece 4 and multiple parts to be heated 5, this heat-insulation layer 6 has heat insulation function, is mainly used in preventing heat loss.Preferably, this heat-insulation layer 6 is made up of insulation material.
The photovoltaic and photothermal integral assembly of the utility model embodiment, it is by arranging cover plate 2 and film plating layer 3 for the sunlight of absorption is converted into electric energy, and the sunlight of component permeate is converted into heat, sent to the parts 5 multiple to be heated be welded on below heat-conducting piece 4 by heat-conducting piece 4, thus the material heated in parts 5 to be heated, simultaneously at frame 1, filling heat insulating wall 6 between heat-conducting piece 4 and parts to be heated 5, prevent heat loss further, the part of waste heat of sunlight is fully used.
Further, as shown in Figure 2, film plating layer 3 comprises the first including transparent conducting oxide layer 31, amorphous silicon layer 32, second including transparent conducting oxide layer 33 and insulating barrier 34.Wherein, the first including transparent conducting oxide layer 31 sputters at cover plate 2 on the side of heat-conducting piece 4 by magnetron sputtering; Amorphous silicon layer 32 produces glow discharge decomposition gas by rf electric field and is formed on the first including transparent conducting oxide layer 31; Second including transparent conducting oxide layer 33 sputters on amorphous silicon layer 32 by magnetron sputtering; Insulating barrier 34 is sputtered on the second including transparent conducting oxide layer 33 by magnetron sputtering.
Preferably, in an embodiment of the present utility model, above-mentioned first including transparent conducting oxide layer 31 is be that substrate sputters by magnetron sputtering the transparent conductive oxide that one deck thickness is 500nm ~ 1000nm with cover plate 2, and this transparent conductive oxide can select the one in ITO, FTO, ZnO and AZO.Be understandable that, in other embodiment of the present utility model, the thickness of this first including transparent conducting oxide layer 31 also can be other attainable numerical value.
Preferably, in an embodiment of the present utility model, the transparent conductive oxide that above-mentioned second including transparent conducting oxide layer 33 is cover plates 2 of being coated with amorphous silicon layer 32 be substrate is 500nm ~ 1000nm by one deck thickness that magnetron sputtering sputters, this transparent conductive oxide can select the one in ITO, FTO, ZnO and AZO.Be understandable that, in other embodiment of the present utility model, the thickness of this second including transparent conducting oxide layer 31 also can be other attainable numerical value.
Further, above-mentioned insulating barrier 34 is silica coating, can play the effect of insulation, and the thicknesses of layers of this insulating barrier 34 is 0 ~ 100nm.
Further, amorphous silicon layer 32 comprises and produces by rf electric field P-type non-crystalline silicon 321, I type amorphous silicon 322 and the N-type amorphous silicon 323 that glow discharge decomposition gas formed successively.Particularly, silane and borine (SiH
4+ B
2h
6) mist pass into vacuum degree and remain in the reative cell of 10Pa ~ 1000Pa, rf electric field produces glow discharge, and the mist of silane and borine is decomposed, and cover plate 2 is formed P-type non-crystalline silicon 321; Silane (SiH
4) gas passes into vacuum degree and remain in the reative cell of 10Pa ~ 1000Pa, rf electric field produces glow discharge, and silane gas is decomposed, and the cover plate 2 being laminated with P-type non-crystalline silicon 321 is formed I type amorphous silicon 322; Silane and phosphine (SiH
4+ PH
3) mist pass into vacuum degree and remain in the reative cell of 10Pa ~ 1000Pa, rf electric field produces glow discharge, the mist of silane and phosphine is decomposed, and the cover plate 2 being laminated with I type amorphous silicon 322 forms N-type amorphous silicon 323, thus realizes the lamination of amorphous silicon layer 32.
Preferably, cover plate 2 is toughened glass, and the transmitance of this cover plate 2 is greater than 91.6%.
Further, in order to cover plate 2, film plating layer 3, heat-conducting piece 4, parts to be heated 5 and heat-insulation layer 6 are encapsulated in frame 1 better, limiting section 11 is formed in the side of frame 1, cover plate 2 is connected on limiting section 11 away from the side of film plating layer 3, make the photovoltaic and photothermal integral modular construction of the utility model embodiment compact, convenient installation.
As shown in Figure 3, in photovoltaic and photothermal integral assembly of the present utility model, its preparation method specifically comprises the following steps:
S1, on cover plate 2 lamination film plating layer 3;
S2, parts 5 to be heated are welded on heat-conducting piece 4 by Laser Welding, coated cover-plate 2 and heat-conducting piece 4 and parts to be heated 5 are encapsulated in frame 1;
S3, between frame 1, heat-conducting piece 4 and parts to be heated 5 fill insulant material.
Particularly, in above-mentioned steps S1, cover plate 2 is toughened glass, and the transmitance of this cover plate 2 is greater than 91.6%.
Particularly, in above-mentioned steps S2, heat-conducting piece 4 is aluminium sheet; Parts 5 to be heated are made up of Heat Conduction Material, and multiple parts 5 to be heated are welded on the side of heat-conducting piece 4 by Laser Welding; Heat-insulation layer 6 is made up of insulation material, has heat insulation function.
Further, as shown in Figure 4, the lamination film plating layer 3 on cover plate 2 in above-mentioned steps S1 specifically comprises the following steps:
S11, the cover plate 2 through detecting is put into heating removal of impurities chamber carry out heating removal of impurities, then enter conductive oxide plated film chamber and on cover plate 2, be coated with by magnetically controlled sputter method the transparent conductive oxide that a layer thickness is 500nm-1000nm;
S12, to be coated with the cover plate 2 of conductive oxide for substrate, to produce glow discharge decomposition gas by rf electric field successively and form P-type non-crystalline silicon 321, I type amorphous silicon 322 and N-type amorphous silicon 323 on its surface;
S13, on the cover plate 2 of the good amorphous silicon membrane of lamination, be coated with layer of transparent conductive oxide and layer of silicon dioxide insulating material by magnetron sputtering, be namely coated with the second including transparent conducting oxide layer 33 and insulating barrier 34.
Particularly, in above-mentioned steps S11, first the toughened glass through detecting being put into heating removal of impurities chamber, after heating chamber, entering conductive oxide plated film chamber, being coated with the first including transparent conducting oxide layer 31.This first including transparent conducting oxide layer 31 is preferably AZO rete, in coating process, sputtering target selects the AZO target of 2%, sputter gas adopts Ar gas, operating pressure is 0.3Pa ~ 0.5Pa, shielding power supply adopts DC power supply, and the thickness of this AZO rete is 500nm ~ 1000nm, after being coated with, enter atomization chamber, cooling processing chamber, be cooled to until temperature the toughened glass taking out coated first including transparent conducting oxide layer 31 after room temperature.
Particularly, in above-mentioned steps S12, by with the toughened glass being coated with the first including transparent conducting oxide layer 31 for substrate, its surface formed amorphous silicon thin-film materials, namely formed amorphous silicon layer 32.First silane and borane gases being passed into vacuum degree is in the reative cell of 10Pa ~ 1000Pa, adopts rf electric field generation glow discharge that the gas passed into is decomposed, the toughened glass being coated with the first including transparent conducting oxide layer 31 forms P-type non-crystalline silicon 321.The substrate of good for lamination P-type non-crystalline silicon 321 is delivered to next chamber, and this chamber passes into silane gas, and same employing rf electric field produces the gas decomposition that glow discharge makes to pass into, and the toughened glass being laminated with P-type non-crystalline silicon 321 is formed I type amorphous silicon 322.The substrate of lamination good I type amorphous silicon 322 is delivered to next chamber, this chamber passes into silane and borane gases, adopt rf electric field generation glow discharge that the gas passed into is decomposed, the toughened glass being laminated with I type amorphous silicon 322 forms N-type amorphous silicon 323, thus realizes the lamination of amorphous silicon layer 32.
Particularly, in above-mentioned steps S13, the second including transparent conducting oxide layer 33 can select the one in ITO, FTO, ZnO, AZO conductive oxide; Insulating barrier 34 can play the effect of insulation, and the thicknesses of layers of this insulating barrier 34 is 0 ~ 100nm.
The photovoltaic and photothermal integral assembly that the utility model embodiment provides, its filming equipment produces glow discharge lamination rete mainly through magnetron sputtering and rf electric field, and equipment is simple.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace or improvement etc., all should be included within protection range of the present utility model.
Claims (8)
1. a photovoltaic and photothermal integral assembly, it is characterized in that, comprise frame (1), be encapsulated in the cover plate (2) of described frame (1) side, be coated on described cover plate (2) inner side film plating layer (3), be arranged on described film plating layer (3) surface heat-conducting piece (4), be welded on the multiple to be heated parts (5) of described heat-conducting piece (4) away from the side of described film plating layer (3), and be filled in described frame (1), heat-insulation layer (6) between heat-conducting piece (4) and parts to be heated (5).
2. photovoltaic and photothermal integral assembly as claimed in claim 1, it is characterized in that, described film plating layer (3) comprises the first including transparent conducting oxide layer (31), the amorphous silicon layer (32) be formed on described first including transparent conducting oxide layer (31), the second including transparent conducting oxide layer (33) be formed on described amorphous silicon layer (32), and is formed in the insulating barrier (34) on described second including transparent conducting oxide layer (33).
3. photovoltaic and photothermal integral assembly as claimed in claim 2, it is characterized in that, described amorphous silicon layer (32) comprises and produces by rf electric field P-type non-crystalline silicon (321), I type amorphous silicon (322) and the N-type amorphous silicon (323) that glow discharge decomposition gas formed successively.
4. photovoltaic and photothermal integral assembly as claimed in claim 2, it is characterized in that, described first including transparent conducting oxide layer (31) is the one in ITO, FTO, ZnO and AZO; Described second including transparent conducting oxide layer (33) is the one in ITO, FTO, ZnO and AZO.
5. photovoltaic and photothermal integral assembly as claimed in claim 2, it is characterized in that, the thickness of described first including transparent conducting oxide layer (31) is 500nm-1000nm.
6. photovoltaic and photothermal integral assembly as claimed in claim 2, it is characterized in that, described insulating barrier (34) is silica coating, and the thicknesses of layers of described insulating barrier (34) is 0-100nm.
7. photovoltaic and photothermal integral assembly as claimed in claim 1, it is characterized in that, described cover plate (2) is toughened glass, and the transmitance of described cover plate (2) is greater than 91.6%.
8. photovoltaic and photothermal integral assembly as claimed in claim 1, it is characterized in that, the side of described frame (1) is formed with limiting section (11), and described cover plate (2) is connected on described limiting section (11) away from the side of described film plating layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520939672.9U CN205212780U (en) | 2015-11-23 | 2015-11-23 | Photovoltaic and photothermal integrated assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520939672.9U CN205212780U (en) | 2015-11-23 | 2015-11-23 | Photovoltaic and photothermal integrated assembly |
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| Publication Number | Publication Date |
|---|---|
| CN205212780U true CN205212780U (en) | 2016-05-04 |
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|---|---|---|---|
| CN201520939672.9U Expired - Fee Related CN205212780U (en) | 2015-11-23 | 2015-11-23 | Photovoltaic and photothermal integrated assembly |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788233A (en) * | 2015-11-23 | 2017-05-31 | 深圳市拓日新能源科技股份有限公司 | A kind of photovoltaic and photothermal integral component and preparation method thereof |
-
2015
- 2015-11-23 CN CN201520939672.9U patent/CN205212780U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788233A (en) * | 2015-11-23 | 2017-05-31 | 深圳市拓日新能源科技股份有限公司 | A kind of photovoltaic and photothermal integral component and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180423 Address after: Shenzhen Kashi Economic Development Zone Industrial Park 844000 the Xinjiang Uygur Autonomous Region Kashi two road Shenka areas of entrepreneurship and entrepreneurship Service Center Patentee after: Kashi Ruicheng new energy Polytron Technologies Inc. Address before: 518000 8 building, 4060 Xiang year square, Qiao Xiang Road, Nanshan District, Shenzhen, Guangdong, A Patentee before: SHENZHEN TOPRAY SOLAR Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160504 Termination date: 20211123 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |