CN104467661A - Solar electric heating integrated device - Google Patents
Solar electric heating integrated device Download PDFInfo
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- CN104467661A CN104467661A CN201410605098.3A CN201410605098A CN104467661A CN 104467661 A CN104467661 A CN 104467661A CN 201410605098 A CN201410605098 A CN 201410605098A CN 104467661 A CN104467661 A CN 104467661A
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- 238000005485 electric heating Methods 0.000 title abstract 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 61
- 239000010409 thin film Substances 0.000 claims description 54
- 230000005622 photoelectricity Effects 0.000 claims description 30
- 239000005357 flat glass Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
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- 239000000203 mixture Substances 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 7
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- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
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- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000006059 cover glass Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000010248 power generation Methods 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 24
- 238000005530 etching Methods 0.000 description 20
- 238000001704 evaporation Methods 0.000 description 17
- 239000011669 selenium Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 230000008020 evaporation Effects 0.000 description 13
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- 229910052711 selenium Inorganic materials 0.000 description 6
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- 229910000906 Bronze Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
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- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
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- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 208000036829 Device dislocation Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
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- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S10/00—Solar heat collectors using working fluids
- F24S10/40—Solar heat collectors using working fluids in absorbing elements surrounded by transparent enclosures, e.g. evacuated solar collectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S10/00—Solar heat collectors using working fluids
- F24S10/70—Solar heat collectors using working fluids the working fluids being conveyed through tubular absorbing conduits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
- Y02E10/44—Heat exchange systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar electric heating integrated device. The solar electric heating integrated device is characterized by comprising a photovoltaic power generation unit and a photo-thermal collection unit. The photovoltaic power generation unit is composed of a double-glazed packaging photoelectric conversion film, and the photoelectric conversion film comprises a modified TCO light-trapping film, a photoelectric conversion film CIGS and conducting electrode graphene from top to bottom. The photo-thermal collection unit is composed of a thermal collection liquid flow module and a thermal collection module. The photovoltaic power generation unit transmits solar energy through the light-trapping film to the maximum degree so that the solar energy can reach the photoelectric conversion film to be converted into electric energy, and then a conducting electrode outputs the electric energy through a junction box. The photo-thermal collection unit is installed on the back face of the photovoltaic power generation unit and structurally characterized in that a thermal collection liquid flow film is bonded between the back face of the photovoltaic power generation unit and the thermal collection module. High photoelectric conversion efficiency of a low-temperature photovoltaic module and comprehensive utilization of photoelectric conversion of the abandoned solar energy are achieved.
Description
Technical field
The present invention relates to solar photovoltaic conversion and photothermal deformation integrated comprehensive utilizes field, the particularly integrated gasifying device of a kind of solar electrothermal.
Background technology
Solar energy is huge as a kind of energy storage, widely distributed, the clean and safe energy, worldwide extensive use, and solar radiation reaches the energy on ground up to 4x10
15mW is 2000 times of global energy consumption.At present, solar energy is utilized mode mainly: solar energy power generating, solar energy thermal-power-generating, solar hydrogen making, solar refrigeration, solar water heater etc.Although the application of these aspects is extensively ripe, higher for solar energy power generating cost, be about 10 times of thermal power generation cost, and the problems demand solution that solar energy power generating conversion efficiency is lower.For photothermal technique, be mostly the form of solar water heater, the heat energy of low energy product can only be utilized, general technical disparate development.
Photovoltaic scope is 300nm-2400nm, the utilization of relative solar energy, and photovoltaic generation just make use of the 400nm-1200nm of solar spectrum scope, and photo-thermal just make use of 1200nm-2400nm.Photothermal technique just make use of 40% of its surface of solar radiation, photoelectric technology is the highest make use of 20% of solar radiation energy, photo-thermal power generation technology make use of 15%, photoelectricity and photothermal technique are all less than effectively utilizing solar energy very well comprehensively, cause the waste of solar energy, as can be seen here, different solar energy applied productses utilizes very few to its absorption bands self-energy, and the solar energy of the overwhelming majority wastes.Simultaneously, this solar energy be wasted can affect to solar module, only have less than 5%-20% in engineer applied when solar radiant energy is incident on sun power battery plate, and nearly the solar energy of 60%-70% is converted to heat energy or other energy, these energy are not utilized and give up, and the energy given up can cause following several respects to have a strong impact on solar cell photovoltaic generating: 1) causing solar cell plate temperature to raise affects generating efficiency.Because most of luminous energy is not converted to electric energy by absorption, and be converted to heat energy, the accumulation of heat energy makes solar cell plate temperature raise gradually, causes generator unit electronics and hole to be moved and increases its internal resistance, has a strong impact on generating conversion efficiency.2) useful life is had a strong impact on.The accumulation of other energy and heat energy, can affect solar battery P-N and tie aging, occur defect, thus shorten the useful life of solar module.
By the proposition of above problem, also carry out the research that corresponding photo-thermal and photoelectric comprehensive utilize technology both at home and abroad.Can find from research in recent years, all kinds of technology of the thermo-electric union system of solar energy are not yet improved ripe, particularly receive the impact of the factors such as temperature limiting due to photovoltaic efficiency.Domestic, just carry out part research for BIPV at present, but all do not form the solution technique of a scale, be in research and development and improve the stage.Therefore, this project is taked sunken optical thin film, conductive electrode Graphene and is abandoned light energy collection conversion thermal energy and surplus heat collection device, reduce the temperature rise of solar cell photo-thermal, improve solar cell conversion efficiency eventually, finally make the photoelectricity of solar energy and the utilization to greatest extent of photo-thermal energy.
Summary of the invention
The object of the invention is to the deficiency for existing photovoltaic/thermal comprehensive utilization technique, there is provided a kind of solar electrothermal integrated gasifying device, it is characterized in that, the integrated gasifying device of solar electrothermal comprises: photovoltaic generation unit, photo-thermal collector unit, wherein, photovoltaic generation unit encapsulates photoelectricity conversion thin film by double glazing and forms, and photoelectricity conversion thin film comprises sunken optical thin film, photoelectricity conversion thin film, conductive electrode from top to bottom, photo-thermal collector unit is made up of heat collecting liquid flow module and thermal-arrest collection module, described photovoltaic generation unit is by falling into optical thin film to greatest extent through solar energy, make it reach photoelectricity conversion thin film and be converted to electric energy, by conductive electrode, electric energy is exported by terminal box again, described photo-thermal collector unit is arranged on the photovoltaic generation unit back side, its structure bonds heat collecting liquid stream mould between the photovoltaic generation unit back side and thermal-arrest collection module, the heat energy of photovoltaic generation unit generation and the transform light energy thermal energy collecting of photoelectricity abandonment the most at last, this technology realizes temperature when reducing solar components generating, make it maintain a low-temperature condition to run, the generating film unit of copper indium gallium selenium solar assembly is allowed better to be played, thus maintain stable high-efficiency photovoltaic conversion efficiency.In addition, also achieve all the other solar energies to be converted to heat energy and to be utilized.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the integrated apparatus structure of described solar generator is: the heated fluid stream module of photovoltaic generation unit glass back and photo-thermal collector unit adopts silica gel to bond, photo-thermal collector unit and photovoltaic generation unit periphery adopt sealant sealing, and encapsulate aluminium alloy C type outer rim.
The described integrated gasifying device of a kind of solar generator, is characterized in that, described photovoltaic generation unit is copper-indium-galliun-selenium film solar cell.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described photovoltaic generation unit structure is: deposition of conductive electrodes successively on basic glass, photoelectricity conversion thin film, fall into optical thin film, and encapsulated by EVA adhesive cover glass sheet, its electric energy output wiring box arranges the base plate glass back side, composition photovoltaic generation unit, wherein, conductive electrode is graphene film, and photoelectricity conversion thin film is CIGS and CdS film, and sunken optical thin film is surface modification TCO thin film.
The described integrated gasifying device of a kind of solar generator, is characterized in that, described conductive electrode graphene film adopts chemical gaseous phase depositing process preparation, is in 1.0x10-3Pa environment, is filled with the CH that purity is 5N at condition of high vacuum degree
4, C
2h
2gas, base plate glass heating temperatures is between 150 DEG C-200 DEG C, and operating pressure is adjusted between 5.0x10-2Pa-1.0x10-1Pa, is deposited as three-dimensional conductive Graphene network configuration, and its thickness is between 500nm-800nm.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described photoelectricity conversion thin film is made up of CIGS absorbed layer film and CdS buffer layer thin film, preparation technology is, on the base plate glass depositing Graphene, adopt magnetic control sputtering vacuum coating method sputtering CuGa and In film, again adopt on thermal evaporation method coating Se film and CuGa and In film, carried out high annealing, make Cu, Ga, In, Se tetra-kinds of elements grow crystallization at high operating temperatures, form absorbed layer CIGS, again thereon is deposited CdS by chemical thought mode, wherein the thickness of CIGS is between 800nm-1200nm, CdS thickness is between 40-60nm.
The integrated gasifying device of described a kind of solar generator, it is characterized in that, described sunken optical thin film is modification TCO thin film, its preparation method is: on the substrate depositing photoelectricity conversion thin film, the method of magnetron sputtering is adopted to deposit i-ZnO and AZO film successively, again this film is carried out physical plasma deflection and select bombardment etching, change the surface roughness of AZO film, light channel structure, microstructure, make its formed to solar spectrum FR through, reduce the reflectivity of sunlight illumination, wherein i-ZnO film is between 50nm-100nm, AZO film is between 600nm-800nm.
Described sunken optical thin film, it is characterized in that: described modification AZO film is under the vacuum degree of 1.0x10-2Pa-5x10-2Pa in vacuum, cardinal temperature is-10 DEG C, adopt Ar plasma physics bombardment etching technics, its AZO is etched for surface nano-structure characteristic size is at 300-600nm, and sharp cone distal nanostructure, its square resistance is lower than 10 Ω/.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the heat collecting liquid flow module of described photo-thermal collector unit is made up of the conduction oil of the copper pipe coiled and copper pipe inside, and wherein the deep fat of copper pipe is flowed into by introducing port and export mouth and reserved to form circulation.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the copper pipe of the coiling of described photo-thermal collector unit is the coiling of U-shaped shape, the internal diameter of copper pipe is 1cm, its wall thickness is 5mm, conduction oil is the silicone oil of high heat capacity, for being passed by the heat of collection, for feedwater heating.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the thermal-arrest collection module of described photo-thermal collector unit by depositing blue titanium film above base plate glass, for collecting the sunlight of reflectance-transmittance photovoltaic generation unit and light being converted to heat trnasfer to heat collecting liquid stream mould.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described blue titanium thin film deposition processes is magnetron sputtering deposition, adopt titanium target, be between 1-3Pa at sputtering pressure, reacting gas is N2, O2, Ar, its O2:N2 is between 0.5%-2%, wherein the ratio of N2 and O2 total flow and Ar is 5%, and base plate glass temperature is between 100 DEG C-150 DEG C, and the thickness of blue titanium film is 1 μm-1.5 μm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, described photovoltaic generation unit and photo-thermal collector unit adopt silica gel packaging, preferably silica gel is white or black, its silica gel all covers the bronze pan tube of heat collecting liquid flow module, and only bonding the back-panel glass of generator unit and the base plate glass of thermal-arrest collection module, its thickness is between 18mm-22mm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, described solar electrothermal integrated gasifying device entirety is upper and lower glass packaging, and glass periphery adopts fluid sealant to be wound around periphery encapsulation, described fluid sealant is thickness is 3mm, and width is the foam tape of 40mm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, the housing of described encapsulation is C type structure, fixing in the C type groove of housing by the integrated device card of solar electrothermal of foam tape encapsulation, wherein, housing forms rectangle by four C type frames, and frame connecting corner adopts screw riveted joint.
The integrated gasifying device of a kind of solar generator of the present invention effectively reduces the temperature of solar panel by photo-thermal collector unit, avoid the rising of its surface temperature cause generator unit electronics and hole to be moved and increase the impact of its internal resistance on generating efficiency, the reflection of the light that film reduces to greatest extent is fallen into the time, which increase the light absorption of copper-indium-gallium-selenium photovoltaic generator unit, thus improve photoelectric conversion efficiency, photovoltaic generation unit minute surface film is again by photothermal reflectance, ensure again that photo-thermal collector unit abandons spectrum and thermal-radiating utilization, ensure that radiations heat energy and light reflect again to be collected by photo-thermal collector unit and to be converted to heat energy, taken away the heat of photovoltaic generation unit simultaneously, ensure the temperature of generator unit, thus extend the useful life of its device, this device make use of solar energy to greatest extent, achieve the comprehensive effect simultaneously utilized of photo-thermal and photoelectricity.
Accompanying drawing explanation
The integral planar structural representation of the integrated gasifying device of Fig. 1 solar generator of the present invention;
The modular structure schematic diagram of the integrated gasifying device of Fig. 2 solar generator of the present invention;
Fig. 3 the invention process case structure generalized section;
Fig. 4 specifically implements Pvd equipment structural representation;
Fig. 5 is concrete enforcement physical etchings device structure schematic diagram.
Embodiment
Below in conjunction with accompanying drawing and a better case study on implementation, technical scheme of the present invention is described further.
Consult Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and carry out the further implementation example explanation of technical solution of the present invention, the integrated gasifying device of a kind of solar electrothermal, it is characterized in that, the integrated gasifying device of solar electrothermal comprises: photovoltaic generation unit 1, photo-thermal collector unit 2 and encapsulation unit are wherein, photovoltaic generation unit encapsulates photoelectricity conversion thin film by double glazing and forms, and photoelectricity conversion thin film comprises modification TCO from top to bottom and falls into optical thin film 1.2, photoelectricity conversion thin film CIGS1.3, conductive electrode Graphene 1.4, photo-thermal collector unit is made up of heat collecting liquid flow module 3 and thermal-arrest collection module, described photovoltaic generation unit is by falling into optical thin film to greatest extent through solar energy, make it reach photoelectricity conversion thin film and be converted to electric energy, by conductive electrode, electric energy is exported by terminal box 12 again, described photo-thermal collector unit 2 is arranged on photovoltaic generation unit 1 back side, its structure bonds heat collecting liquid stream mould 3 between photovoltaic generation unit 1 back side and thermal-arrest collection module 4, the heat energy of photovoltaic generation unit generation and the transform light energy thermal energy collecting of photoelectricity abandonment the most at last, this technology realizes temperature when reducing solar components generating, make it maintain a low-temperature condition to run, the generating film unit of copper indium gallium selenium solar assembly is allowed better to be played, thus maintain stable high-efficiency photovoltaic conversion efficiency.In addition, also achieve all the other solar energies to be converted to heat energy and to be utilized.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the integrated apparatus structure of described solar generator is: the heated fluid stream module 3 of photovoltaic generation unit 1 glass back and photo-thermal collector unit 2 adopts silica gel to bond, photo-thermal collector unit 2 and photovoltaic generation unit 1 periphery adopt fluid sealant 11 to seal, and encapsulate aluminium alloy C type outer rim 10.
The described integrated gasifying device of a kind of solar generator, is characterized in that, described photovoltaic generation unit 1 is copper-indium-galliun-selenium film solar cell.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described photovoltaic generation unit structure is: deposition of conductive electrodes 1.4 successively on basic glass 1.5, photoelectricity conversion thin film 1.3, fall into optical thin film 1.2, and encapsulated by EVA adhesive cover glass sheet 1.1, its electric energy output wiring box 12 arranges base plate glass 1.5 back side, composition photovoltaic generation unit, wherein, conductive electrode 1.4 is graphene film, and photoelectricity conversion thin film 1.3 is CIGS and CdS film, and falling into optical thin film 1.2 is surface modification TCO thin film.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described photovoltaic generation unit is copper-indium-galliun-selenium film solar cell, its structure is from the TCO thin film 1.2, resilient coating CdS film, absorbed layer CIGS thin film 1.3, conductive electrode graphene film 1.4, base plate glass 1.5, the electric energy output wiring box 12 that are followed successively by cover-plate glass 1.1, EVA, modification etching up and down.
Described photovoltaic generation unit, is characterized in that, preferably cover-plate glass is toughened glass, and thickness is 6mm, and resistance to compression is 2000Pa, and base plate glass is common ultra-white float glass, and thickness is between 2-3mm.
Described photovoltaic generation unit, it is characterized in that, preferred terminal box is the terminal box of conventional photovoltaic delivery of electrical energy, its rated current is 10A, and heatproof is more than 270 DEG C, and output cable is 2.5mm2, IP degree of protection is IP67, flame retardant rating is UL94V, and terminal box type is two binding posts, the structure of a diode.
The described integrated gasifying device of a kind of solar generator, is characterized in that, described conductive electrode graphene film adopts chemical gaseous phase depositing process preparation, is in 1.0x10-3Pa environment, is filled with the CH that purity is 5N at condition of high vacuum degree
4, C
2h
2gas, CH
4: C
2h
2ratio be 4:1, base plate glass heating temperatures is between 150 DEG C-200 DEG C, and operating pressure is adjusted between 5.0x10-2Pa-1.0x10-1Pa, is deposited as three-dimensional conductive Graphene network configuration, and its thickness is between 500nm-800nm.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described photoelectricity conversion thin film is made up of CIGS absorbed layer film and CdS buffer layer thin film, preparation technology is, on the base plate glass depositing Graphene, adopt magnetic control sputtering vacuum coating method sputtering CuGa and In film, again adopt on thermal evaporation method coating Se film and CuGa and In film, carried out high annealing, make Cu, Ga, In, Se tetra-kinds of elements grow crystallization at high operating temperatures, form absorbed layer CIGS, again thereon is deposited CdS by chemical thought mode, wherein the thickness of CIGS is between 800nm-1200nm, CdS thickness is between 40-60nm.
The integrated gasifying device of described a kind of solar generator, it is characterized in that, described sunken optical thin film is modification TCO thin film, its preparation method is: on the substrate depositing photoelectricity conversion thin film, the method of magnetron sputtering is adopted to deposit i-ZnO and AZO film successively, again this film is carried out physical plasma deflection and select bombardment etching, change the surface roughness of AZO film, light channel structure, microstructure, make its formed to solar spectrum FR through, reduce the reflectivity of sunlight illumination, wherein i-ZnO film is between 50nm-100nm, AZO film is between 600nm-800nm.
Described sunken optical thin film, it is characterized in that: described modification AZO film is under the vacuum degree of 1.0x10-2Pa-5x10-2Pa in vacuum, cardinal temperature is-10 DEG C, adopt Ar plasma physics bombardment etching technics, etching air pressure is 0.1Pa-0.2Pa, its AZO is etched as surface nano-structure characteristic size is at 300-600nm, and sharp cone distal nanostructure, its square resistance is lower than 10 Ω/.
Described photovoltaic generation unit, is characterized in that, described EVA is the ethylene-vinyl acetate copolymer that photovoltaic module is conventional, and its thickness is 0.1mm.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the heat collecting liquid flow module 3 of described photo-thermal collector unit 2 is made up of the conduction oil of the copper pipe coiled and copper pipe inside, and wherein the deep fat of copper pipe flows into 14 by introducing port 13 and export mouth to form circulation with flowing out.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the copper pipe of the coiling of described photo-thermal collector unit is the coiling of U-shaped shape, the internal diameter of copper pipe is 1cm, its wall thickness is 5mm, conduction oil is the silicone oil of high heat capacity, for being passed by the heat of collection, for feedwater heating.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, the thermal-arrest collection module 4 of described photo-thermal collector unit 2 deposits blue titanium film 2.1, for collecting the sunlight of reflectance-transmittance photovoltaic generation unit and light being converted to heat trnasfer to heat collecting liquid stream mould above by base plate glass 2.2.
The described integrated gasifying device of a kind of solar generator, it is characterized in that, described blue titanium thin film deposition processes is magnetron sputtering deposition, adopt titanium target, be between 1-3Pa at sputtering pressure, reacting gas is N2, O2, Ar, its O2:N2 is between 0.5%-2%, wherein the ratio of N2 and O2 total flow and Ar is 5%, and base plate glass temperature is between 100 DEG C-150 DEG C, and the thickness of blue titanium film is 1 μm-1.5 μm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, described photovoltaic generation unit and photo-thermal collector unit adopt silica gel packaging, preferably silica gel is white or black, its silica gel all covers the bronze pan tube of heat collecting liquid flow module, and only bonding the back-panel glass of generator unit and the base plate glass of thermal-arrest collection module, its thickness is between 18mm-22mm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, described solar electrothermal integrated gasifying device entirety is upper and lower glass packaging, and glass periphery adopts fluid sealant 11 to be wound around periphery encapsulation, described fluid sealant is thickness is 3mm, and width is the foam tape of 40mm.
The described integrated gasifying device of a kind of solar electrothermal, it is characterized in that, the housing 10 of described encapsulation is C type structure, fixing in the C type groove of housing by the integrated device card of solar electrothermal of foam tape encapsulation, wherein, housing forms rectangle by four C type frames, and frame connecting corner adopts screw riveted joint.
Case study on implementation:
Step one: prepare conductive electrode graphene film in chemical vapor depsotition equipment, base plate glass being placed on condition of high vacuum degree is in 1.0x10-3Pa environment, is filled with the CH that purity is 5N
4, C
2h
2gas, CH
4: C
2h
2ratio be 4:1, base plate glass heating temperatures is 150 DEG C, and operating pressure is adjusted to 1.0x10-1Pa, and radio-frequency power supply deposition power is 500W, and the three-dimensional being deposited as thickness 800nm leads network configuration graphene film.
Step 2: adopt magnetically controlled sputter method to deposit CIGS thin film on the substrate of existing Graphene, first CuGa and In target is adopted, be in 1x10-4Pa environment in vacuum degree, pass into Ar, the sputtering pressure regulating Ar is 0.3pa, substrate temperature is 50 DEG C, CuGa deposition adopts DC power supply sputtering, its power used is 800w, In deposition adopts DC power supply sputtering, its power is 500w, CuGa and In film thickness sputters 600nm and 20nm respectively, again, the substrate having plated CuGa and In is placed in evaporation equipment, adopt thermal evaporation method coating Se film, evaporation Se, adopt metal Se particle, substrate temperature controls at 60 DEG C, vacuum degree is 1x10-2Pa, with DC power supply heating of metal Se particle, its Se is evaporated and becomes Se steam, Se must below saturated vapor pressure, Se steam evaporates coating from bottom to top with on the substrate prepared, finally the print being coated with Se is carried out high annealing, make Cu, Ga, In, Se tetra-kinds of elements grow crystallization at high operating temperatures, form absorbed layer CIGS, the most promotion to 550 DEG C of this temperature, holding the temperature time is 5min, the substrate heating-up time is 20min, temperature fall time is 10min, CIGS thin film thickness is 1200nm.
Step 3: adopt chemical thought mode CdS thin films in CIGS thin film, in chemical deposition pond, configuration chemical reaction deposit liquid, thiocarbamide is 0.04mol/L; Ammoniacal liquor is 1mol/L; Cadmium salt concentration is 0.012mol/L, and bath temperature is 60 DEG C, and CdS thickness is 40nm.
Step 4: first adopt AZO and ZnO target, at vacuum degree 1x10-3Pa environment, substrate temperature is 200 DEG C, pass into Ar and O2, wherein O2 content is 0.5%, and regulate sputtering pressure to be under 0.1Pa, DC power supply power is 500w, sputtering sedimentation i-ZnO film is in CdS film, and i-ZnO film is 50nm; On ZnO film, adopt Ar sputtering pressure to be 0.3Pa, DC power supply power is 800w, sputtering sedimentation AZO film, and AZO film thickness is 600nm, and wherein said AZO target is the ZnO of doping 2%Al.Finally, the substrate having plated AZO film being placed on physical plasma deflection selects in bombardment etching apparatus, vacuum is 5x10-2Pa, cardinal temperature is-10 DEG C, adopt Ar plasma physics bombardment etching technics, etching air pressure is 0.1Pa-0.2Pa, and etching DC power supply power is 300w, and etching AZO surface is the sunken optical thin film of sharp cone distal nanostructure.
Step 4: cover EVA film preparing on CIGS thin film solar cell substrate, adopting toughened glass to cover, is 100 DEG C in temperature, vacuum degree is under 100Pa, carries out laminating packaging, after encapsulation, bonding terminal box after base plate glass, exported by electric energy, prepared by photovoltaic generation unit.
Step 5: prepare photo-thermal collection module, again ultrawhite execution glass is taken as substrate, adopt the blue titanium film of magnetron sputtering deposition, target is titanium target, and sputtering pressure is 1Pa, reacting gas is N2, O2, Ar, its O2:N2 is between 0.5%-2%, and wherein the ratio of N2 and O2 total flow and Ar is 5%, and base plate glass temperature is between 100 DEG C-150 DEG C, radio-frequency power supply sputtering power is 500w, and the thickness of blue titanium film is 1 μm-1.5 μm.
Step 6: on the blue titanium film of photo-thermal collection module, heat collecting liquid flow module is installed, this module adopts the bronze pan tube of built-in silicone oil, coil pipe is that multiple U-shaped is evenly arranged, coil pipe silicone oil is imported and exported and is connected with cold-heat exchanger, import and export sealing and adopt metallic gasket screw thread fast sealing interface, wherein photo-thermal collection module and heat collecting liquid flow module form photo-thermal collector unit.
Step 7: adopt silica gel sealing to bond between photovoltaic generation power supply and photo-thermal collector unit, wherein the heat collecting liquid flow module of photo-thermal collector unit and the base plate glass of generator unit bond, intermediate gap all adopts silicone filler to seal, finally be wound around the sealing of foam tape edge sealing at whole device, outer rim encapsulation is installed.
Described physical deflection etching device, is characterized in that: this device comprises vacuum cavity 200, air extractor 205, measurement mechanism 207, ion source device 201, inlet duct 203, substrate cooled supports device 206, substrate 204.Described air extractor, is characterized in that: in etching cavity, provides a vacuum environment and etching particle is got rid of the effect of cavity, and air extractor comprises mechanical pump, lobe pump, molecular pump composition.The base vacuum of cavity need reach 1x10-3Pa once, just can carry out etching technics.Described measurement mechanism, is characterized in that: measuring instrument comprises resistance vacuum gauge, ionization vacuum gauge, electric capacity vacuum gauge, for detecting vacuum pressure in vacuum etching cavity.Described ion source device, is characterized in that: under the effect of electric field, and etching gas glow discharge produces high-density plasma, has the substrate of the Ions Bombardment mask of certain energy, material atom is sputtered, reach the object of etching.Described inlet duct, is characterized in that: for etching provides stable process gas, main process gas comprises: the inert gas of Ar, Kr or Xe and so on.Described substrate cooled supports device, is characterized in that: for supporting substrate and by cooling-cycle device reduction substrate temperature to ensure the device of base plate carving and corrosion speed.
Described magnetic control sputtering device, is characterized in that: this device comprises vacuum cavity 100, air extractor 105, measurement mechanism 107, cathode sputtering device 102, external power supply 101, inlet duct 103, baseplate support device 104, heater 106.Described air extractor, is characterized in that: in sputtering cavity, provide a vacuum environment and by the effect of air scavenge cavity, and air extractor comprises mechanical pump, lobe pump, molecular pump composition.The base vacuum of cavity need reach 9x10-4Pa once, just can carry out sputter coating process.Described measurement mechanism, is characterized in that: measuring instrument comprises resistance vacuum gauge, ionization vacuum gauge, electric capacity vacuum gauge, for detecting vacuum pressure in vacuum sputtering cavity.Described cathode sputtering device, is characterized in that: for providing bombardment target material, by target material sputtering sedimentation on substrate, and its structure is that negative electrode is relative with substrate.Described external power supply, is characterized in that: power supply comprises DC power supply, direct current pulse power source, intermediate frequency power supply, radio-frequency power supply, is ionized the effect of build-up of luminance electric discharge for process gas.Described baseplate support device, is characterized in that: the device moved for supporting substrate or transmission base plate.Described heater, is characterized in that: for technique sputter coating process, and be substrate intensification thermostatic effect, heater comprises Resistant heating mode and infrared lamp mode of heating.Described inlet duct, is characterized in that: provide technological reaction gas for sputtering, process gas is Ar, O2 etc.
Described chemical vapor deposition unit, it is characterized in that: this device comprises vacuum system, depositing system, special gas system, radio system, affiliated vacuum system primarily of a series of pump group and bellows and valve composition, Main Function maintains vacuum chamber vacuum state, holding chamber chamber pressure is stablized, and takes the particle that reaction generates in time away.Described depositing system mainly comprises cvd furnace and work rest.Main Function is the temperature constant ensureing substrate in deposition reaction process, depositing temperature is usually between 200-230 DEG C, described special gas system is primarily of special air pipe and electromagnetically operated valve composition, Main Function is to provide special gas required for film forming and purges other of chamber, and reacting gas mainly contains Ar, CH3, B2H6, H2, SiH4 etc.Described radio system is primarily of radio-frequency power supply and electrode composition, and Main Function is under the low vacuum state that deposition chambers is certain, and radio-frequency power supply is put into reacting gas ionize being passed into, and then the film quality required for generating.
Described evaporation equipment device, is characterized in that: evaporation equipment device comprises, evaporation source, evaporating materials, power supply, supporting substrate device, vacuum cavity, vacuum pump; Its evaporation equipment apparatus structure formula be substrate on evaporation source, the steam of evaporating materials evaporates from bottom to top, then deposits to the process of substrate surface.Described evaporation source, is characterized in that: evaporation source comprises crucible evaporation source and evaporation boat evaporation source, for holding the device of evaporating materials.Described power supply, is characterized in that: DC power supply or AC power, for providing the device of high-power heating evaporation material, will transfer heat on evaporating materials fast, be evaporated by material melts.
The integrated gasifying device of a kind of solar generator of the present invention effectively reduces the temperature of solar panel by photo-thermal collector unit, avoid the rising of its surface temperature cause generator unit electronics and hole to be moved and increase the impact of its internal resistance on generating efficiency, the reflection of the light that film reduces to greatest extent is fallen into the time, which increase the light absorption of copper-indium-gallium-selenium photovoltaic generator unit, thus improve photoelectric conversion efficiency, photovoltaic generation unit minute surface film is again by photothermal reflectance, ensure again that photo-thermal collector unit abandons spectrum and thermal-radiating utilization, ensure that radiations heat energy and light reflect again to be collected by photo-thermal collector unit and to be converted to heat energy, taken away the heat of photovoltaic generation unit simultaneously, ensure the temperature of generator unit, thus extend the useful life of its device, this device make use of solar energy to greatest extent, achieve the comprehensive effect simultaneously utilized of photo-thermal and photoelectricity.
Claims (5)
1. the integrated gasifying device of solar electrothermal, it is characterized in that, the integrated gasifying device of solar electrothermal comprises: photovoltaic generation unit, photo-thermal collector unit, wherein, photovoltaic generation unit encapsulates photoelectricity conversion thin film by double glazing and forms, and photoelectricity conversion thin film comprises modification AZO from top to bottom and falls into optical thin film, photoelectricity conversion thin film, conductive electrode Graphene; Photo-thermal collector unit is made up of heat collecting liquid flow module and thermal-arrest collection module; Described photovoltaic generation unit is by falling into optical thin film to greatest extent through solar energy, make it reach photoelectricity conversion thin film and be converted to electric energy, by conductive electrode, electric energy is exported by terminal box again, described photo-thermal collector unit is arranged on the photovoltaic generation unit back side, its structure bonds heat collecting liquid stream mould between the photovoltaic generation unit back side and thermal-arrest collection module, the heat energy of photovoltaic generation unit generation and the transform light energy thermal energy collecting of photoelectricity abandonment, realize the comprehensive utilization of the photothermal deformation of low temperature photovoltaic module efficient photoelectricity treater conversion efficiency and abandonment solar energy the most at last.
2. the integrated gasifying device of a kind of solar generator as claimed in claim 1, it is characterized in that, the integrated apparatus structure of described solar generator is: the heated fluid stream module of photovoltaic generation unit glass back and photo-thermal collector unit adopts silica gel to bond, photo-thermal collector unit and photovoltaic generation unit periphery adopt sealant sealing, and encapsulate aluminium alloy C type outer rim.
3. the integrated gasifying device of a kind of solar generator as claimed in claim 1, it is characterized in that, described photovoltaic generation unit structure is: deposition of conductive electrodes successively on basic glass, photoelectricity conversion thin film, fall into optical thin film, and encapsulated by EVA adhesive cover glass sheet, its electric energy output wiring box arranges the base plate glass back side, composition photovoltaic generation unit, wherein, conductive electrode is graphene film, and photoelectricity conversion thin film is CIGS and CdS film, and sunken optical thin film is surface modification TCO thin film.
4. the integrated gasifying device of a kind of solar generator as claimed in claim 1, it is characterized in that, the heat collecting liquid flow module of described photo-thermal collector unit is made up of the conduction oil of the copper pipe coiled and copper pipe inside, and wherein the deep fat of copper pipe is flowed into by introducing port and export mouth and reserved to form circulation.
5. the integrated gasifying device of a kind of solar generator as claimed in claim 1, it is characterized in that, the thermal-arrest collection module of described photo-thermal collector unit by depositing blue titanium film above base plate glass, for collecting the sunlight of reflectance-transmittance photovoltaic generation unit and light being converted to heat trnasfer to heat collecting liquid stream mould.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609577A (en) * | 2016-03-09 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Solar photovoltaic cell module |
| CN105610399A (en) * | 2016-03-17 | 2016-05-25 | 亿代科技（江苏）有限公司 | Photovoltaic module having function of heat collection |
| CN108105838A (en) * | 2017-12-15 | 2018-06-01 | 浙江明烁节能科技股份有限公司 | Graphene heating glass component based on photoelectric functional |
| CN108574455A (en) * | 2018-06-11 | 2018-09-25 | 甘肃自然能源研究所 | A kind of photovoltaic and photothermal electric hybrid module of cogeneration of heat and power |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312331A (en) * | 2007-05-23 | 2008-11-26 | 昆山太得隆机械有限公司 | Light-gathering solar thermal electric combined supply device |
| CN201181711Y (en) * | 2008-04-03 | 2009-01-14 | 巨茂光电(厦门)有限公司 | Solar photovoltaic/photo-thermal combination component |
| CN102117859A (en) * | 2010-12-31 | 2011-07-06 | 浙江梅地亚新能源科技有限公司 | Flat plate solar photovoltaic heat collector adopting amorphous silicon glass film battery |
| CN202487635U (en) * | 2012-03-17 | 2012-10-10 | 泉州市博泰半导体科技有限公司 | Transparent solar power generation hollow plate glass hot-water device |
| CN102779891A (en) * | 2011-12-15 | 2012-11-14 | 香港中文大学 | CIGS thin film type solar cell device and preparation method thereof |
| CN102832293A (en) * | 2012-09-21 | 2012-12-19 | 蚌埠玻璃工业设计研究院 | Preparation method of suede AZO (Aluminum-doped Zinc Oxide) thin film for silicon-based thin film solar battery |
| CN202871837U (en) * | 2012-11-01 | 2013-04-10 | 国电南京自动化股份有限公司 | Photovoltaic-thermal collecting assembly |
| CN103501158A (en) * | 2013-04-10 | 2014-01-08 | 高清鸿 | Photovoltaic and photothermal integrated assembly |
| CN203574600U (en) * | 2013-10-18 | 2014-04-30 | 合肥中南光电有限公司 | Porous type solar photovoltaic photo-thermal integrated assembly |
| CN203574605U (en) * | 2013-10-18 | 2014-04-30 | 合肥中南光电有限公司 | Lateral extension type solar photovoltaic photo-thermal integrated assembly |
| CN203839391U (en) * | 2014-06-03 | 2014-09-17 | 重庆师范大学 | Solar photovoltaic and photo-thermal composite assembly |
| CN203896304U (en) * | 2014-05-28 | 2014-10-22 | 江苏四叶草新能源科技有限公司 | Light-electricity-heat integrated solar assembly |
-
2014
- 2014-11-03 CN CN201410605098.3A patent/CN104467661A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312331A (en) * | 2007-05-23 | 2008-11-26 | 昆山太得隆机械有限公司 | Light-gathering solar thermal electric combined supply device |
| CN201181711Y (en) * | 2008-04-03 | 2009-01-14 | 巨茂光电(厦门)有限公司 | Solar photovoltaic/photo-thermal combination component |
| CN102117859A (en) * | 2010-12-31 | 2011-07-06 | 浙江梅地亚新能源科技有限公司 | Flat plate solar photovoltaic heat collector adopting amorphous silicon glass film battery |
| CN102779891A (en) * | 2011-12-15 | 2012-11-14 | 香港中文大学 | CIGS thin film type solar cell device and preparation method thereof |
| CN202487635U (en) * | 2012-03-17 | 2012-10-10 | 泉州市博泰半导体科技有限公司 | Transparent solar power generation hollow plate glass hot-water device |
| CN102832293A (en) * | 2012-09-21 | 2012-12-19 | 蚌埠玻璃工业设计研究院 | Preparation method of suede AZO (Aluminum-doped Zinc Oxide) thin film for silicon-based thin film solar battery |
| CN202871837U (en) * | 2012-11-01 | 2013-04-10 | 国电南京自动化股份有限公司 | Photovoltaic-thermal collecting assembly |
| CN103501158A (en) * | 2013-04-10 | 2014-01-08 | 高清鸿 | Photovoltaic and photothermal integrated assembly |
| CN203574600U (en) * | 2013-10-18 | 2014-04-30 | 合肥中南光电有限公司 | Porous type solar photovoltaic photo-thermal integrated assembly |
| CN203574605U (en) * | 2013-10-18 | 2014-04-30 | 合肥中南光电有限公司 | Lateral extension type solar photovoltaic photo-thermal integrated assembly |
| CN203896304U (en) * | 2014-05-28 | 2014-10-22 | 江苏四叶草新能源科技有限公司 | Light-electricity-heat integrated solar assembly |
| CN203839391U (en) * | 2014-06-03 | 2014-09-17 | 重庆师范大学 | Solar photovoltaic and photo-thermal composite assembly |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609577A (en) * | 2016-03-09 | 2016-05-25 | 中利腾晖光伏科技有限公司 | Solar photovoltaic cell module |
| CN105610399A (en) * | 2016-03-17 | 2016-05-25 | 亿代科技（江苏）有限公司 | Photovoltaic module having function of heat collection |
| CN108105838A (en) * | 2017-12-15 | 2018-06-01 | 浙江明烁节能科技股份有限公司 | Graphene heating glass component based on photoelectric functional |
| CN108574455A (en) * | 2018-06-11 | 2018-09-25 | 甘肃自然能源研究所 | A kind of photovoltaic and photothermal electric hybrid module of cogeneration of heat and power |
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