JP4592852B2 - Magnetron cathode of sputtering equipment - Google Patents

Description

[0001]
[Technical field to which the invention belongs]
The present invention relates to a magnetron cathode of a sputtering apparatus, and more particularly to a magnetron cathode that makes the erosion in a target surface uniform, extends the life of the target, and reduces the change over time of the formed film thickness distribution.
[0002]
[Prior art]
A sputtering apparatus using a magnetron cathode having a flat target is widely used for forming various thin films such as semiconductors, display devices, and electronic components. For example, in the case of forming a thin film on a rectangular substrate such as a liquid crystal display (LCD) panel substrate, a magnetron cathode having a rectangular flat target is used. Along with this, a sputtering technique for uniformly depositing a thin film on a substrate having a larger area is required.
[0003]
At present, as a sputtering method for uniformly forming a thin film on a rectangular large-area substrate, for example, as shown in FIG. 9, a magnet unit assembly 10 including a plurality of magnet units 60 is provided on the back side of a rectangular target 100. There is a method of performing sputtering while arranging and reciprocating this in one direction. As shown in FIG. 10, the magnet unit includes a long block-shaped central magnet 20 on a rectangular yoke, and an outer peripheral magnet 21 disposed on four sides surrounding the central magnet 20. The central magnet 20 and the outer peripheral magnet 21 are magnetized in directions opposite to each other in a direction perpendicular to the surface of the yoke 23.
[0004]
Here, when a negative voltage is applied between the magnetron cathode and the vacuum vessel wall to generate plasma in a vacuum, along the closed tunnel-like path created by magnetic lines of force on the flat target surface of the rectangular magnetron cathode. The electrons drift, creating a loop-like trajectory. When there are multiple magnet units, multiple loop-like trajectories are generated, and the drift electrons collide with the gas molecules and ionize them, so a high-density plasma is formed along the trajectory drawn by the drift electrons. Is done. The target surface just below the locus drawn by the drift electrons is sputtered by receiving a strong ion bombardment, and the sputtered particles are deposited on the substrate to form a thin film. Here, since there are an extremely large number of drift electrons and the locus thereof has a band shape having a certain width, the region to be sputtered on the target surface also becomes a band-shaped loop region. If sputtering is continued in such a state, only the loop region is mainly eroded, so the target utilization rate is extremely low, and the thin film deposited on the substrate also has a reduced film thickness uniformity. The magnet unit assembly 10 is reciprocated in one direction to make the erosion area on the target uniform.
[0005]
[Problems to be solved by the invention]
However, even with the above configuration, the target erosion area is not sufficiently uniform, and the target utilization rate is currently only about 10%, particularly in the case of expensive materials, which increases the product cost, In addition, the frequency of target replacement is increased, which causes a decrease in productivity. In addition, there remains a problem that the film thickness uniformity of the formed thin film decreases with the cumulative sputtering time. These problems tend to become more apparent as the substrate (and thus the target) becomes larger.
[0006]
Therefore, in order to investigate the cause of non-uniformity of target erosion and the film thickness distribution formed over time, the present inventor examined the sputtering situation with various magnet unit arrangement cathode configurations. Then, it turned out that there were the following problems.
[0007]
First, in the conventional configuration, even when all the same magnet units are used, the degree of erosion of the target surface corresponding to the magnet units differs depending on the arrangement position, and in particular, the portions corresponding to the magnet units at both ends. It was found that the degree of erosion increased. Furthermore, as a result of studies, on the target surface outside the central magnet, a phenomenon occurs in which the plasma emission intensity is stronger than the other equivalent parts, while the leakage magnetic field strength is lower. I found out. And it became clear that this phenomenon becomes remarkable especially when the intensity | strength of the leakage magnetic field of a target surface is set to about 0.01-0.04T.
[0008]
The details of why these phenomena occur are not clear at present, but are thought to be as follows. That is, since there is no magnet unit outside the magnet units at both ends, the shape of the magnetic field lines formed by the central magnet and the outer longitudinal part of the outer peripheral magnet in the magnet units at both ends is more than the shape of the magnetic field lines of the other magnet units. Follow a trajectory that makes a large turn to the outside, and the width of the magnetic field lines crossing the target surface becomes wider than the magnetic field lines of the other magnet units. For this reason, the width of the belt-like loop region described above also differs at the same location by the outer portions of the magnet units at both ends and the other magnet units, and the width of the belt-like loop regions of the magnet units at both ends becomes wide.
The applied voltage is constant in any belt-like loop region, but the current that flows during discharge depends on the width and area of the belt-like loop region. The strength is strong at the wide part of the belt-like loop, and unbalanced at the narrow part. The light emission intensity of plasma is proportional to the plasma density, and the higher the plasma density, the faster the erosion rate on the target surface. As a result, it is considered that non-uniform consumption of the target occurs.
[0009]
On the other hand, when a conventional magnetron cathode is used, the thin film deposited on the substrate has a problem that the film thickness is reduced at positions corresponding to both-end magnet units. Although the cause of thinning of the film despite the high erosion rate on the target surface is not clear at present, in order to avoid this problem and obtain a uniform film thickness distribution, for example, JP-A-8-199354 As described in the above, the magnet units at both ends are brought closer to the target surface side than the other magnet units, the leakage magnetic field strength at the magnet unit portions at both ends is increased, and the amount of particles sputtered from the target surface is increased. It is necessary to take a magnet unit arrangement.
[0010]
However, with such an arrangement, the magnetic field strength generated on the target surface by the magnet units at both ends becomes stronger, and the amount of target erosion at the part corresponding to the magnet units at both ends is larger than that by other magnet units. There is a problem that it becomes larger. In addition, when the magnet unit reciprocates, the plasma of the magnet units at both ends interferes with the structure such as the target shield and the discharge disappears. A thin film with a uniform thickness cannot be obtained unless the magnet units at both ends are brought closer to the target surface than necessary. As a result, the amount of erosion at the target portions corresponding to the magnet units at both ends is further increased.
[0011]
In general, it is known that the magnetic field strength changes in inverse proportion to the square of the distance from the magnet surface, and the target surface is eroded, and as the eroded surface approaches the magnet unit surface, the magnetic field strength increases at an accelerated rate. At the same time, the erosion speed of the target is considered to increase at an accelerated rate.
[0012]
As described above, in the conventional magnetron cathode, the target is not consumed uniformly as a whole, and the life of the target is limited by the portion corresponding to the outermost magnet unit. It is thought to decline. Further, since the non-uniformity of target consumption increases at an accelerated rate, it is considered that the film thickness uniformity of the thin film formed therewith decreases with the accumulated sputtering time.
[0013]
The present invention has been completed as a result of further studying the structure of the magnetron cathode and the configuration and arrangement of the individual magnet units based on the above knowledge. That is, an object of the present invention is to provide a magnetron cathode capable of making the target consumption uniform, improving the utilization rate of the target, and extending the lifetime. Furthermore, it aims at providing the magnetron cathode which can prevent the fall of the film thickness uniformity accompanying the uneven consumption of a target.
[0014]
The magnetron cathode of the present invention completed to achieve the above object comprises a rectangular magnet unit arranged on the back surface of a target so that an outer peripheral magnet having a polarity opposite to that of the central magnet surrounds the central magnet. In a magnetron cathode of a sputtering apparatus that is arranged in a direction perpendicular to the vertical direction and reciprocates in the vertical direction, A bar-shaped magnet having the same polarity as that of the outer peripheral magnet is arranged on the outer side of the magnet unit located at both ends in the reciprocating direction. By adopting such a configuration The target surface leakage magnetic field strength formed by the longitudinal part of the outer peripheral magnet and the central magnet is maximized at the part corresponding to the longitudinal part of the outermost peripheral magnet and the central magnet in the corresponding part of the plurality of magnet units. It can be. That is, Also in the magnet units at both ends, by creating a magnetic field shape equivalent to that of the other magnet units, it is possible to make the band-like loop width on the target surface corresponding to each magnet unit the same and increase the leakage magnetic field strength on the target surface. . In addition, since it is not necessary to bring the outermost magnet unit closer to the target surface than necessary to form a thin film having a uniform thickness, the problem of uneven consumption of the target can be solved, and the film thickness distribution is uniform. The decrease in sex over time can also be reduced.
[0015]
Also, with the above configuration The magnetic field generated by the outer longitudinal portion of the outer peripheral magnet and the central magnet of the outermost magnet unit and the central magnet is raised to suppress the outward spread, and the strength of the magnetic field is the same as or larger than that of other magnet units. can do . In addition, by adjusting the magnetic field strength of the rod-shaped magnet unit and the arrangement interval, the strength and shape of the magnetic field on the longitudinal side adjacent to the rod-shaped magnet unit in the outermost magnet unit can be freely changed. For this reason, it is possible to easily create an optimum magnetic field strength and shape depending on the target material and the substrate size.
[0016]
Alternatively, the magnetron cathode of the present invention includes a plurality of rectangular magnet units arranged in a direction perpendicular to the longitudinal direction on the back surface of the target so that an outer peripheral magnet having a polarity opposite to the central magnet surrounds the central magnet. In the magnetron cathode of the sputtering apparatus that is reciprocated in the vertical direction, the magnet units positioned at both ends of the reciprocating direction are arranged between the outer peripheral magnet and the central magnet between the outer peripheral magnet and the central magnet. An auxiliary magnet of the same polarity is provided It is good as composition, In particular, A second auxiliary magnet having the same polarity as the central magnet may be disposed between the auxiliary magnet and the central magnet. With the above configuration, The target surface leakage magnetic field strength formed by the longitudinal part of the outer peripheral magnet and the central magnet is maximized at the part corresponding to the longitudinal part of the outermost peripheral magnet and the central magnet in the corresponding part of the plurality of magnet units. can do. That is, The strength of the magnetic field created by the outer longitudinal portion of the outer peripheral magnet and the central magnet in the outermost magnet unit can be maximized, i.e., can be equal to or greater than the magnetic field strength of the other magnet units. As described above, it is possible to suppress non-uniform consumption of the target and reduce the change in the film thickness distribution over time.
[0017]
In the present invention, the interval between the plurality of magnet units, or the interval between the plurality of magnet units and the interval between the rod-shaped magnet and the magnet unit arranged next to the interval are set to the length in the short direction of the magnet unit. 1/10 or more is preferable. By setting the spacing between the magnet units and the bar magnets in this way, the uniformity of target erosion is further improved, the utilization rate of the target is further improved, and the film thickness distribution of the formed film can be changed over time. Can be suppressed.
[0018]
In the present invention, it is preferable to provide a mechanism for changing the distance of the bar-shaped magnet to the target surface in synchronism with the change of the distance to the target surface of the magnet unit arranged adjacent to the bar-shaped magnet. By providing this mechanism, even when the distance between the magnet unit and the target is changed, the shape of the magnetic field generated by the outer longitudinal part of the outer peripheral magnet of the outermost magnet unit and the central magnet can be kept substantially constant at all times. It is possible to further suppress non-uniform consumption of the film and change with time in the film thickness distribution.
[0019]
Furthermore, the magnet unit and in front Bar magnet From Distance to target surface The A mechanism that changes according to the integrated power of the target It is preferable to provide it. By adjusting the distance between the magnet unit including the bar-shaped magnet and the target surface in accordance with the integrated power input to the target, non-uniform consumption of the target and changes with time in the film thickness distribution can be further reduced.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
The configuration of the present invention will be described in more detail with reference to the following examples.
Example 1
FIG. 1 is a front sectional view showing a sputtering apparatus using the magnetron cathode of the present invention. The magnetron cathode 1 includes a rectangular flat target 100, a backing plate 101 for holding and cooling the target 100, a magnet unit assembly 10 disposed on the back surface of the backing plate, and the magnet unit assembly 10 And a mechanism 11 for reciprocally moving.
[0021]
A target shield 150 is disposed on the outer periphery of the target 100. Inside the backing plate 101, a water channel 102 for passing cooling water is formed and attached to the wall 24 of the vacuum vessel via an insulator 151. Electric power is supplied from the variable DC power supply 900 to the backing plate. The sputtering gas is supplied into the vacuum vessel through the gas introduction pipe 170 and is discharged to the outside through the main valve 173 by the exhaust system. The pressure in the vacuum vessel is set to a desired value by adjusting the main valve or the gas flow rate. The large rectangular substrate 160 is transferred to the substrate stage 161 through the gate valve 172 by a robot hand (not shown), and the outer periphery thereof is covered with a mask 171.
[0022]
The magnet unit assembly 10 has a configuration in which five (15a to 15e) magnet units configured as shown in FIG. As shown in FIG. 10, the magnet unit 15 includes a long plate-shaped central magnet 20 and a rectangular ring-shaped outer peripheral magnet 21 disposed around a yoke 23 having a substantially rectangular planar shape. Consists of The magnetic pole on the yoke 23 side of the central magnet 20 is an N pole, the opposite side is an S pole, and the outer peripheral magnet has the opposite polarity. With this magnetic pole arrangement, magnetic lines of force from the outer peripheral magnet 21 to the central magnet 20 are formed on the target side. Therefore, magnetic lines of force emerge from the target surface above the outer peripheral magnet 21, and magnetic lines of force enter the target surface above the central magnet 20. This magnetic field line forms a tunnel path that is closed in an annular shape.
[0023]
The magnet units 15a to 15e of the magnet unit assembly 10 have the same shape and the same characteristics. On the outside of the magnet units 15a and 15e at both ends, a rod-like magnet 16 having the same length as the length of the magnet units 15a to 15e in the longitudinal direction and having the same width, height, and characteristics as those of the outer peripheral magnet is provided via a base 18. It is arranged on the mounting plate 17. By arranging the rod-like magnets in this way, the density of the target surface leakage magnetic field lines 50a formed by the outer longitudinal portions of the outer peripheral magnets and the center magnets in the magnet units 15a and 15e at both ends can be reduced. Higher than that of the magnetic field lines to prevent the magnetic field lines from spreading outward. The attachment interval 300 between the rod-shaped magnet 16 and the magnet unit 15, the attachment interval 301 between the magnet units 15, and the distance between the target surface and the magnet unit surface (T / M distance) 302 are appropriately adjusted so that the magnetic lines 50 a and 50 b and 51 The corresponding magnetic field strengths were 0.04T and 0.025T, respectively. Here, the distance between the magnet unit and the bar magnet and the target surface can be adjusted, for example, by sandwiching a spacer having a predetermined thickness between the yoke 23 or the pedestal 18 and the magnet mounting plate 17. In order to form a thin film having a uniform thickness, first, the distance between the target surface of each magnet unit and the surface of the magnet unit (T / M distance) is adjusted to an appropriate value, and then the T / Adjust the M distance. The T / M distance of the rod-shaped magnet may be approximately the same as the T / M distance of the both-end magnet unit.
[0024]
In addition, it is preferable that the space | interval 300 between a rod-shaped magnet and a magnet unit, and the space | interval 301 between magnet units shall be 1/10 or more with respect to the short side length of a magnet unit. By setting this ratio to 1/10 or more, the uniformity of target erosion can be improved, the utilization rate of the target can be improved, and a change with time in the film thickness distribution of the formed film can be suppressed. As the stroke of the reciprocating motion, a stroke width that is approximately the sum of the short side length of the magnet unit and the unit interval is usually adopted, but when the interval between the magnet units is increased, the stroke width is increased and formed on the substrate. This ratio is preferably 10/10 (= 1) or less because the length of the region where the thickness of the thin film becomes uniform becomes narrow.
[0025]
The reciprocating mechanism 11 reciprocates the magnet unit assembly 10 by driving a motor, and a rotating disk 82 fixed to the rotating shaft of the motor 81 is a magnet through a pin 85, an arm 86, and a pin 87. The structure is connected to the mounting plate 17. A slide unit 83 is attached to the magnet mounting plate 17, and the slide unit 83 is slidably coupled to the slide rail 84. When the motor 81 rotates, the rotating disk 82 rotates and the magnet unit assembly 10 reciprocates in the arrow direction 55 via the arm 86. As such a mechanism, for example, a mechanism described in Japanese Patent Application Laid-Open No. 11-21666 is preferably used.
[0026]
An example of the results of measuring the film thickness distribution after forming an aluminum thin film using the magnetron cathode described above is shown in the contour diagram of FIG. For comparison, FIG. 2 also shows the results when a conventional magnetron cathode in which no bar magnet is arranged outside the magnet unit is used. The size of the glass substrate 160 used was 600 mm × 720 mm, and film thickness measurement was performed on 121 points in a 580 mm × 700 mm region. The contour lines 201 in the figure are normalized with the maximum film thickness as 100% and are displayed every 5%.
The only difference between the sputtering cathode of this embodiment and the conventional example is the presence or absence of the bar magnet 16, and the size, film forming conditions, and the like are the same. As shown in FIG. 2, it can be seen that the present example provides superior film thickness uniformity as compared with the conventional example. The difference between the two distribution shapes lies in the change in the film thickness on the short side (vertical direction in the drawing) of the glass substrate 160. As can be seen from this result, the region having the uniform thickness is the outermost leakage magnetic field strength. It can be obtained in a wide range just by strengthening.
[0027]
FIG. 3 shows a comparison of the nonuniformity change 251 of the deposited film thickness distribution with respect to the integrated power with the conventional nonuniformity change 250 using the sputtering cathode of this example. The non-uniformity of the film thickness distribution in the conventional example increases with the progress of the integrated power, and becomes almost constant after a certain value. In the sputtering cathode of this example, although there is a slight increase from the beginning to the end, the amount of change is extremely small compared to the conventional case. Here, the integrated power indicates the usage status of the target, the integrated power of 0 kWh means that the target is new, and the last point in the graph means that the target is used up (replacement time).
[0028]
Conventionally, the lifetime of the target was reached with an integrated power of 2000 kWh. However, in this example, it was found that the target lifetime can be extended to 4000 kWh, which is twice that of the conventional one. In the case of this example, the target utilization rate defined by (erosion area weight / target pre-use weight × 100) was 40%, which is more than double that of the conventional example of 18%. The target life was defined as the time when the remaining thickness of the portion with the greatest erosion was 0.5 mm.
[0029]
In the above description, the T / M distance is adjusted by interposing a spacer between the yoke and the magnet mounting plate 17. However, in order to further extend the target life, the T / M of each magnet unit 15 and the bar magnet 16 is increased. The distance may be precisely adjusted to provide a T / M distance adjusting mechanism described in, for example, Japanese Patent Application Laid-Open No. 8-199354 and to increase the film thickness uniformity at each integrated power. At this time, the outermost magnet units 15a and 15e and the bar magnet 16 are preferably moved at the same relative position.
[0030]
In the present embodiment, in the magnet units 15a and 15e at both ends, the target surface magnetic field strength strengthened by the bar magnet 16 is set to 0.04T. However, the present invention is not limited to this. Can take a value. The magnetron cathode structure of the present invention is particularly effective when the leakage magnetic field strength on the target surface is 0.01 to 0.04 T.
[0031]
(Example 2)
FIG. 4 is a front sectional view of the magnet unit assembly 10 representing the second embodiment of the present invention. The magnet unit assembly 10 includes three magnet units 26a, 26b, and 26c between magnet units 25a and 25b at both ends having auxiliary magnets. The outermost magnet unit 25 and the magnet unit 26 have the same external dimensions and magnetic pole materials except for the auxiliary magnets 28a and 28b.
The difference from the first embodiment is that the auxiliary magnets 28a having the same magnetization direction as the outer magnet and the central magnet, respectively, between the outer longitudinal portion 21 of the outer peripheral magnets of the outermost magnet units 25a and 25b and the central magnet 20. 28b is provided.
[0032]
5 shows (a) a top view and (b) a sectional view of the outermost magnet unit 25a in the magnet unit assembly 10 of FIG. The width of the outer peripheral magnet 21 is 6 mm, the width of the center magnet 20 is 8 mm, and two auxiliary magnets 28 a and 28 b having a 10 mm square cross section are attached to the base 29 and the base plate 30. As shown in FIG. 5B, the magnetization direction 40 of the auxiliary magnet 28a is the same as that of the outer peripheral magnet 21, and the auxiliary magnet 28b is of the same direction as the central magnet 20. At this time, the leakage magnetic field intensity on the target surface was about 0.06 T at the place where the auxiliary magnet was present and about 0.027 T at the place where the auxiliary magnet was not present.
[0033]
In the configuration of this example, the same effect as that of Example 1 could be obtained. The base 29 and the base plate 30 are not particularly limited in material, but for example, a magnetic body (SUS430 or the like) made of the same material as that of the yoke is preferably used. Thereby, the leakage magnetic field intensity on the target surface can be further increased.
Also, the number of auxiliary magnets, magnetic strength, size, material, mounting position, pedestal, base shape and presence can be freely selected according to the target material used, the desired thin film thickness distribution and discharge characteristics. . For example, the same effect can be obtained by using the outermost magnet unit 25 having the configuration as shown in FIG. In this case, the auxiliary magnet 28a has the same polarity as that of the outer peripheral magnet 21. For example, the widths of the outer peripheral magnet, the auxiliary magnet, and the central magnet may be 6, 10, and 8 mm, respectively.
The total length of the auxiliary magnets 28a and 28b is approximately the length of the central magnet 20, but is not limited thereto. Further, the auxiliary magnet may be divided into a plurality of parts and arranged at an arbitrary interval.
[0034]
(Example 3)
FIG. 7 is a front sectional view of a magnet unit assembly 10 representing the third embodiment of the present invention. The difference from the first and second embodiments is that the width of the outer longitudinal portion 21a of the outer peripheral magnets of the magnet units 31a and 31b at both ends and the width of the center magnet 20 are wider than those of the other magnet units 32a to 32c. is there. 8 shows (a) a perspective view and (b) a sectional view of the outermost magnet unit 31a in the magnet unit assembly 10 of FIG.
In this embodiment, the widths of the central magnet 20 and the outer peripheral magnet longitudinal portions 21a and 21b are set as shown in FIG. In addition, the width | variety of the short part of an outer periphery magnet is the same as 21b. The center magnet is attached so as to be biased toward the outer peripheral magnet long side (outside) which is wider than the center line. Also in the case of the present embodiment, the strength of the target surface leakage magnetic field formed by the outer longitudinal part of the outer peripheral magnet of the outermost magnet unit and the central magnet is made larger than the leakage magnetic field by the other outer peripheral magnet longitudinal part and the central magnet. It was possible to suppress the non-uniform consumption of the target and the temporal deterioration of the film thickness distribution uniformity.
[0035]
The widths of the magnetic poles of the outer and central magnets are not limited to the dimensions shown in this embodiment, and the magnetic strength, size, material, and mounting position are the target material used and the film thickness of the desired thin film. It can be freely selected according to the distribution and discharge characteristics. In the present invention, only the central magnet can be widened, and the width of the outer peripheral magnet can be the same as that of other magnet units. In this case, however, the center of the center magnet needs to be shifted outward. Even if it does in this way, the same effect can be acquired.
Also, the magnetic pole height of each magnet can be arbitrarily selected according to the desired characteristics as described above.
[0036]
In the above embodiment, the case where the magnet unit assembly 10 is composed of five magnet units has been described. Needless to say, the present invention is not limited to this number. Further, by using a magnetic material of different material and magnetization strength for the rod-shaped magnet, auxiliary magnet, further outer peripheral magnet, and central magnet described above, the outer surface of the outer peripheral magnet of the outermost magnet unit and the target surface of the target magnet by the central magnet are used. The leakage magnetic field strength may be the same or higher than that of other portions.
[0037]
【The invention's effect】
According to the present invention, in the magnetron cathode in which a plurality of magnet units are arranged, the target surface leakage magnetic field formed by the longitudinal part of the outer peripheral magnet and the central magnet is changed to the length of the outermost outer peripheral magnet in the corresponding part of the plurality of magnet units. Non-uniformity of the target erosion can be greatly suppressed, and the uniformity of the film thickness distribution can be reduced. It is possible to suppress a decrease with time. As a result, the frequency of target replacement is increased, the film thickness uniformity is improved, and the film formation cost and productivity can be improved.
[Brief description of the drawings]
FIG. 1 is a front sectional view showing a configuration of a sputtering apparatus of Example 1. FIG.
FIG. 2 is a contour diagram showing the film thickness distribution of a thin film.
FIG. 3 is a graph showing a change with time in non-uniformity of a film thickness distribution of a thin film.
4 is a front cross-sectional view showing a configuration of a magnet unit assembly of Example 2. FIG.
FIGS. 5A and 5B are a top view and a cross-sectional view showing the configuration of the outermost magnet unit of the second embodiment. FIGS.
6A and 6B are a perspective view and a cross-sectional view illustrating another configuration example of the outermost magnet unit according to the second embodiment.
7 is a front cross-sectional view showing a configuration of a magnet unit assembly of Example 3. FIG.
FIGS. 8A and 8B are a perspective view and a cross-sectional view showing the configuration of the outermost magnet unit of the third embodiment. FIGS.
FIG. 9 is a cross-sectional view showing a configuration of a conventional magnetron cathode.
FIG. 10 is a perspective view showing a configuration of a magnet unit.
[Explanation of symbols]
1 magnetron cathode,
10 Magnet unit assembly,
11 Reciprocating mechanism,
15, 25, 26, 31, 32 magnet units,
17 Magnet mounting plate,
18, 29 pedestal,
20 center magnet,
21 outer magnet,
23 York,
24 vacuum vessel wall,
28a, 28b Auxiliary magnets,
30 base plate,
100 rectangular flat target,
101 backing plate,
160 rectangular substrate,
161 substrate stage,
170 gas introduction pipe,
900 Variable DC power supply.

Claims (6)

A plurality of rectangular magnet units arranged on the back surface of the target so as to surround an outer peripheral magnet of the opposite polarity to the central magnet around the central magnet are arranged in a direction perpendicular to the longitudinal direction, and reciprocate in the perpendicular direction. In the magnetron cathode of the sputtering equipment to be moved,
A magnetron cathode, characterized in that rod magnets having the same polarity as the outer peripheral magnet are arranged on the outer sides of the magnet units located at both ends in the reciprocating direction. A plurality of rectangular magnet units arranged on the back surface of the target so as to surround an outer peripheral magnet of the opposite polarity to the central magnet around the central magnet are arranged in a direction perpendicular to the longitudinal direction, and reciprocate in the perpendicular direction. In the magnetron cathode of the sputtering equipment to be moved,
The magnetron cathode, wherein the magnet units located at both ends in the reciprocating direction are provided with auxiliary magnets having the same polarity as the outer magnet between the outer longitudinal portion of the outer magnet and the center magnet . The magnetron cathode according to claim 2 , wherein a second auxiliary magnet having the same polarity as that of the central magnet is disposed between the auxiliary magnet and the central magnet. Claims 1 to 3, characterized in that the distance to the target surface of the bar magnet and a mechanism for changing in synchronization with the change in the distance to the target surface of the magnet units arranged next to the rod-shaped magnet The magnetron cathode according to any one of the above. The interval between the plurality of magnet units, or the interval between the plurality of magnet units and the interval between the rod-shaped magnet and the magnet unit disposed adjacent thereto are 1/10 or more of the short length of the magnet unit. The magnetron cathode according to any one of claims 1 to 4 , wherein: Magnetron cathode according to any one of claims 1 to 5, characterized in that a mechanism for changing the depending from the magnet unit and the prior SL rod-shaped magnets the distance to the target surface to the target cumulative power.

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