CN108559964A - A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film - Google Patents
A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film Download PDFInfo
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- CN108559964A CN108559964A CN201810828325.7A CN201810828325A CN108559964A CN 108559964 A CN108559964 A CN 108559964A CN 201810828325 A CN201810828325 A CN 201810828325A CN 108559964 A CN108559964 A CN 108559964A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Magnetic control sputtering cathode magnetic field disclosed by the invention arrangement, including at least magnetron sputtering cathode main field array, the magnetic control sputtering cathode main field array includes the peripheral magnet for generating the centring magnet of central magnetic field and generating peripheral magnetic field, the periphery magnet is centered around the periphery of centring magnet, the centring magnet and peripheral magnet are each attached to upper magnet yoke, in lower yoke and central magnetic field and peripheral magnetic field is each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction is opposite with the peripheral magnetic direction, it constitutes closed field and forms runway between closed magnetic field.The design of the magnetic control sputtering cathode magnetic field arrangement of the present invention unconfined can widen magnetic control sputtering cathode, and end non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.The invention also discloses the methods for preparing nanostructure C film using above-mentioned magnetic control sputtering cathode magnetic field arrangement.
Description
Technical field
The present invention relates to technical field of vacuum plating, more particularly to a kind of magnetic control sputtering cathode magnetic field arrangement and it is used for
The method for preparing nanostructure C film.
Background technology
Magnetron sputtering belongs to physical gas phase deposition technology, and relative to arc ion plating (aip), magnetron sputtering is arranged by magnetic field
All great changes have taken place with changes of magnetic field for the influence of mode, sputter rate and sputter area.
Currently, magnetron sputtering is due to its depositing temperature is low, prepares film surface is smooth, binding force is high etc. advantages, in light
Plated film, medicine plated film, auto parts and components and other component of machine surface coating fields are learned to be widely used.
It is usual that existing magnetic control sputtering cathode generally comprises yoke, magnet, target surface and anode composition, traditional magnet arrangements
Be 3 row magnet arranged for interval in yoke, external magnetic field and in new magnetic field be in negative direction arrangement form closed magnetic field, it is additional when having
When electric field, electric field and magnetic field form crossed field, and electronics is constrained near magnetic field, high plasma ionization region is formed, by target
Sputtering of materials comes out, and cation is pushed out sputter area, and film is formed near workpieces.According to the difference that magnetic field is arranged, it is divided into
Unbalanced magnetron sputters and non-balance magnetically controlled sputter.For non-balance magnetically controlled sputter, the ion majority of ionization is constrained on target
Near face, the membrane structure of formation is not fine and close enough, and unbalanced magnetic field puts magnetic field with more outer, and cation is along magnetic induction line
Near workpieces are transported to, higher ionization energy is maintained, the film of formation is dense.
In general, to a rectangle magnetic controlled sputtering target, distance of the central magnetic field apart from fringe magnetic field is bigger, then non-homogeneous
Region is bigger, is approximately equal to whole effective magnetic field width.Traditional, future obtains broader magnetron sputtering ionization region, usually there is 2
Kind way.First, it is arranged using twin target, this method will not sacrifice the homogeneous area of magnetron sputtering, but design structure becomes
It obtains complicated.For this purpose, people develop the more runway magnetic fields of rectangular-ambulatory-plane again, both added one of magnetic field again in original external magnetic field periphery, such as
Shown in Fig. 1.This method increases effective ionization region really in the direction of the width, but in target end, sputtering and plated film are non-
Homogeneous area increases with the increase of magnetic field overall width, causes to be compressed in length direction row plated film homogeneous area.
For the effective uniform ionization region for ensureing in target width direction, while target end Nonuniform Domain Simulation of Reservoir is reduced, the present invention
Block form magnetic field track layout is proposed, replaces traditional more racetrack torus around arrangement.
Invention content
It is an object of the present invention to for present in the more runway magnetic fields of existing rectangular-ambulatory-plane in target end, sputtering and plating
Film Nonuniform Domain Simulation of Reservoir increases with the increase of magnetic field overall width, causes compressed in length direction row plated film homogeneous area
Problem and a kind of effective uniform ionization region to ensure in target width direction is provided, while reducing target end Nonuniform Domain Simulation of Reservoir
Magnetic control sputtering cathode magnetic field arrangement is increasing plasma ionization homogeneous area by block form magnetic field track layout
It compresses the non-homogeneous sputtering in target end and coating film area as far as possible simultaneously, improves target utilization and plating membrane efficiency.
The second object of the present invention, which is to provide, a kind of to be received using above-mentioned magnetic control sputtering cathode magnetic field arrangement to prepare
The method of rice structure C film.
As the magnetic control sputtering cathode magnetic field arrangement of first aspect present invention, including at least magnetron sputtering cathode base
This magnetic field array, the magnetic control sputtering cathode main field array include the centring magnet and the peripheral magnetic of generation for generating central magnetic field
The peripheral magnet of field, the periphery magnet are centered around the periphery of centring magnet, and the centring magnet and peripheral magnet are each attached to
On upper magnet yoke, lower yoke and central magnetic field and peripheral magnetic field is each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction and institute
Peripheral magnetic direction is stated on the contrary, constituting closed field and forming runway between closed magnetic field.
In a preferred embodiment of the invention, the centring magnet be one it is single-row, it is described periphery magnet be around
A circle in centring magnet periphery, the distance of peripheral magnet described in the front and rear ends and lateral distance of the centring magnet
It is equal.
In a preferred embodiment of the invention, the width of the centring magnet and peripheral magnet is 4-13mm,
Described in the width of centring magnet be the 2/3 of peripheral magnet width.
In a preferred embodiment of the invention, the centring magnet and the peripheral magnet whole be arranged at an equal altitude are upper
In yoke, lower yoke, the upper magnet yoke, lower yoke thickness be the 1/3 of the centring magnet and the peripheral magnet height.
In a preferred embodiment of the invention, it processes to place the centring magnet on the upper magnet yoke
First upper groove and to place the second upper groove of peripheral magnet, processes to place centring magnet in the lower yoke
The first lower groove and to place the second lower groove of peripheral magnet, the upper/lower terminal of the centring magnet is inserted respectively into
The first upper groove on the upper magnet yoke neutralizes in the first lower groove in the lower yoke, and upper and lower the two of the periphery magnet
The second upper groove being inserted respectively on the upper magnet yoke is held to neutralize in the second lower groove in the lower yoke.
In a preferred embodiment of the invention, the upper magnet yoke and lower yoke are all made of high permeability material and are made.
In a preferred embodiment of the invention, the depth of first upper groove and the second upper groove is that upper magnet yoke is thick
The depth of the 1/2 of degree, first lower groove and the second lower groove is the 1/2 of lower yoke thickness.
In a preferred embodiment of the invention, magnetic control sputtering cathode magnetic field arrangement is by more than two magnetic
Sputter cathode main field array parallel composition is controlled, more than two runways arranged side by side are formed；Wherein two neighboring magnetron sputtering
Peripheral magnet in cathode main field array some share.
As second aspect of the present invention nanostructure carbon is prepared using above-mentioned magnetic control sputtering cathode magnetic field arrangement
The method of film, includes the following steps：
Step 1：Workpiece to be plated is mounted in and is located at magnetic control sputtering cathode magnetic field arrangement and the first target, the second target
On intermediate work rest, wherein the first target is Cr targets, the second target is Ti targets；
Step 2：First target and the second target are connected on same bipolar pulse intermediate frequency power supply, by workpiece to be plated and work rest
It is connected on grid bias power supply, wherein the frequency of bipolar pulse intermediate frequency power supply is 120Hz, duty ratio 50%, the frequency of grid bias power supply
For 60Hz, duty ratio 30%, the target height of the first target and the second target is 250mm, and the target width of the first target and the second target is
The target current 10A of 155mm, the first target and the second target；
Step 3：Mixed metal implanted layer plating step, mixed metal adhesive layer plating step, TiCrNC layers of plating step are carried out successively
Rapid and nanostructure C film functional layer plates step, finally obtains the workpiece for the nanostructure C film that thickness is 2150nm,
The technological parameter of middle mixed metal implanted layer plating step be 15min the times, atmosphere is Ar gas 0.8Pa, bias 1200V, thickness
For 110nm；The technological parameter of mixed metal adhesive layer plating step be 25min the times, atmosphere is Ar gas 0.8Pa, bias 220V,
Thickness is 240nm；TiCrNC layers plating steps technological parameters be 65min, atmosphere Ar/N the time2/CH4=1:1:1,
0.8Pa, bias 180V, thickness 800nm；Nanostructure C film functional layer plating step technological parameter be 70min the times,
Atmosphere is Ar/CH4=1:2,1.2Pa, bias 240V, thickness 1000nm.
The positive effect of the present invention is that：
(1) design of magnetic control sputtering cathode magnetic field arrangement of the invention unconfined can widen magnetron sputtering the moon
Pole, and end non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.
(2) the wide target surface of magnetic field optimization design, the film for obtaining 2150nm thickness is used to need time 2 h 55 minutes,
Than the 30 minutes 1 hour film the street time that traditional target cathode obtains same thickness.
(3) the nanostructure C film obtained reaches HF1 grades (traditional HF2 grades), hardness in plunger surface binding force
31Gpa is higher than conventional cathode target 17%.
Description of the drawings
Fig. 1 is the structural schematic diagram of the polycyclic road magnetic field arrangement of tradition of the present invention.
Fig. 2 is the magnetic control sputtering cathode magnetic field arrangement that two magnetic control sputtering cathode main field array parallels of the present invention are formed
Structural schematic diagram.
Fig. 3 is the magnetic control sputtering cathode magnetic field arrangement that three magnetic control sputtering cathode main field array parallels of the present invention are formed
Structure prepares the arrangement schematic diagram of nanostructure C film.
Specific implementation mode
Referring to Fig. 2, magnetic control sputtering cathode magnetic field arrangement of the invention, by two row magnetic control sputtering cathode main field battle arrays
Row 100,100a are formed side by side, and each magnetic control sputtering cathode main field array 100,100a include the center for generating central magnetic field
Magnet 110,110a and the peripheral magnet 120, the 120a that generate peripheral magnetic field, peripheral magnet 120 are centered around the outer of centring magnet 110
It encloses, peripheral magnet 120a is centered around the periphery of centring magnet 110a.Some periphery magnet is in peripheral magnet 120,120a
Shared.
Each magnetic control sputtering cathode main field array 100, the centring magnet 110 in 100a, 110a and peripheral magnet
120,120a be each attached to upper magnet yoke (not shown), in lower yoke (not shown) and central magnetic field and peripheral magnetic field it is equal
Perpendicular to upper magnet yoke, lower yoke, central magnetic field direction is with the peripheral magnetic direction on the contrary, constituting closed field and in closed magnetic field
Between formed runway 130,130a.Two runways 130,130a are arranged side by side.
Each magnetic control sputtering cathode main field array 100, the centring magnet 110 in 100a, 110a are one single-row, outside
It is the circle for being centered around 110 periphery of centring magnet, the front and rear ends and lateral distance periphery magnetic of centring magnet 110 to enclose magnet 210
The distance of iron 210 is equal, and peripheral magnet 210a is the circle for being centered around the peripheries centring magnet 110a, before centring magnet 110a,
The distance of both ends and lateral distance periphery magnet 210a are equal afterwards.
The width of centring magnet 110,110a and peripheral magnet 210,210a is 4-13mm, wherein centring magnet 110,
The width of 110a be peripheral magnet 210,210a width 2/3.
Centring magnet 110,110a and peripheral magnet 210,210a wholes be arranged at an equal altitude are in upper magnet yoke, lower yoke, upper magnetic
Yoke, lower yoke thickness be centring magnet 110,110a and peripheral magnet 210,210a height 1/3.
It processes to place centring magnet 110, the first upper groove of 110a and to place peripheral magnetic on upper magnet yoke
Second upper groove of iron 210,210a, process to place in lower yoke centring magnet 110,110a the first lower groove and
To place the second lower groove of peripheral magnet 210,210a, centring magnet 110,110a upper/lower terminal be inserted respectively into
In the first upper groove in yoke and lower yoke on the first lower groove in, peripheral magnet 210,210a upper/lower terminal difference
The second upper groove being inserted on upper magnet yoke neutralizes in the second lower groove in the lower yoke.
Upper magnet yoke and lower yoke are all made of high permeability material and are made.The depth of first upper groove and the second upper groove is upper magnetic
The depth of the 1/2 of yoke thickness, first lower groove and the second lower groove is the 1/2 of lower yoke thickness.
The design of the magnetic control sputtering cathode magnetic field arrangement of the present invention unconfined can widen magnetic control sputtering cathode, and
End non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.
The method that the present invention prepares nanostructure C film using above-mentioned magnetic control sputtering cathode magnetic field arrangement, including
Following steps：
Step 1：Workpiece to be plated 700 is mounted in positioned at magnetic control sputtering cathode magnetic field arrangement 300 and the first target 400, the
On work rest 600 among two target 500, wherein the first target 400 is Cr targets, the second target is Ti targets；Magnetic control sputtering cathode magnetic field cloth
Structure 300 is set to be made of three row magnetic control sputtering cathode main field arrays；
Step 2：First target 400 and the second target 500 are connected on same bipolar pulse intermediate frequency power supply, by workpiece to be plated 700
Be connected on grid bias power supply with work rest 600, wherein the frequency of bipolar pulse intermediate frequency power supply be 120Hz, duty ratio 50%, partially
The frequency of voltage source is 60Hz, and the target height of duty ratio 30%, the first target 400 and the second target 500 is 250mm, 400 He of the first target
The target width of second target 500 is 155mm, the target current 10A of the first target and the second target；
Step 3：Mixed metal implanted layer plating step, mixed metal adhesive layer plating step, TiCrNC layers of plating step are carried out successively
Rapid and nanostructure C film functional layer plates step, finally obtains the workpiece for the nanostructure C film that thickness is 2150nm,
The technological parameter of middle mixed metal implanted layer plating step be 15min the times, atmosphere is Ar gas 0.8Pa, bias 1200V, thickness
For 110nm；The technological parameter of mixed metal adhesive layer plating step be 25min the times, atmosphere is Ar gas 0.8Pa, bias 220V,
Thickness is 240nm；TiCrNC layers plating steps technological parameters be 65min, atmosphere Ar/N the time2/CH4=1:1:1,
0.8Pa, bias 180V, thickness 800nm；Nanostructure C film functional layer plating step technological parameter be 70min the times,
Atmosphere is Ar/CH4=1:2,1.2Pa, bias 240V, thickness 1000nm.
The present invention uses the wide target surface of magnetic field optimization design, and the film for obtaining 2150nm thickness needs time 2 h 55 to divide
Clock, than the 30 minutes 1 hour film the street time that traditional target cathode obtains same thickness.
The nanostructure C film that the present invention obtains reaches HF1 grades (traditional HF2 grades), hardness in plunger surface binding force
31Gpa is higher than conventional cathode target 17%.
Claims (9)
1. a kind of magnetic control sputtering cathode magnetic field arrangement, which is characterized in that including at least magnetron sputtering cathode main field
Array, the magnetic control sputtering cathode main field array include generating the centring magnet of central magnetic field and generating the outer of peripheral magnetic field
Enclose magnet, the periphery magnet is centered around the periphery of centring magnet, the centring magnet and peripheral magnet be each attached to upper magnet yoke,
In lower yoke and central magnetic field and peripheral magnetic field is each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction and the periphery
Magnetic direction is on the contrary, constituting closed field and forming runway between closed magnetic field.
2. magnetic control sputtering cathode magnetic field as described in claim 1 arrangement, which is characterized in that the centring magnet is one
Single-row, the periphery magnet is the circle for being centered around the centring magnet periphery, the front and rear ends of the centring magnet and side
Distance apart from the peripheral magnet is equal.
3. magnetic control sputtering cathode magnetic field as described in claim 1 arrangement, which is characterized in that the centring magnet and periphery
The width of magnet is 4-13mm, wherein the width of the centring magnet is the 2/3 of peripheral magnet width.
4. magnetic control sputtering cathode magnetic field as described in claim 1 arrangement, which is characterized in that the centring magnet and described
Peripheral magnet whole be arranged at an equal altitude in upper magnet yoke, lower yoke, the upper magnet yoke, lower yoke thickness be the centring magnet
With the 1/3 of the peripheral magnet height.
5. magnetic control sputtering cathode magnetic field as claimed in claim 4 arrangement, which is characterized in that processed on the upper magnet yoke
Go out to place the first upper groove of the centring magnet and to place the second upper groove of peripheral magnet, in the lower yoke
On process to place the first lower groove of centring magnet and to place the second lower groove of peripheral magnet, the center magnetic
The first upper groove that the upper/lower terminal of iron is inserted respectively on the upper magnet yoke neutralizes the first lower groove in the lower yoke
In, the upper/lower terminal of the periphery magnet is inserted respectively into the second upper groove on the upper magnet yoke and neutralizes in the lower yoke
The second lower groove in.
6. magnetic control sputtering cathode magnetic field as claimed in claim 4 arrangement, which is characterized in that the upper magnet yoke and lower yoke
High permeability material is all made of to be made.
7. magnetic control sputtering cathode magnetic field as claimed in claim 4 arrangement, which is characterized in that first upper groove and
The depth of two upper grooves is the 1/2 of upper magnet yoke thickness, and the depth of first lower groove and the second lower groove is lower yoke thickness
1/2.
8. the magnetic control sputtering cathode magnetic field arrangement as described in any one of claim 1 to 7 claim, which is characterized in that
In a preferred embodiment of the invention, magnetic control sputtering cathode magnetic field arrangement is by more than two magnetron sputterings the moon
Pole main field array parallel composition, forms more than two runways arranged side by side；Wherein two neighboring magnetic control sputtering cathode is basic
Peripheral magnet in the array of magnetic field some share.
9. preparing nanometer using the magnetic control sputtering cathode magnetic field arrangement described in any one of claim 1 to 8 claim
The method of structure C film, which is characterized in that include the following steps：
Step 1：Workpiece to be plated is mounted among magnetic control sputtering cathode magnetic field arrangement and the first target, the second target
Work rest on, wherein the first target be Cr targets, the second target be Ti targets；
Step 2：First target and the second target are connected on same bipolar pulse intermediate frequency power supply, workpiece to be plated and workpiece are bridged on
On grid bias power supply, wherein the frequency of bipolar pulse intermediate frequency power supply is 120Hz, and the frequency of duty ratio 50%, grid bias power supply is
The target height of 60Hz, duty ratio 30%, the first target and the second target is 250mm, and the target width of the first target and the second target is 155mm,
The target current 10A of first target and the second target；
Step 3：Successively carry out mixed metal implanted layer plating step, mixed metal adhesive layer plating step, TiCrNC layer plate steps and
Nanostructure C film functional layer plates step, finally obtains the workpiece for the nanostructure C film that thickness is 2150nm, wherein mixed
The technological parameter of alloy category implanted layer plating step be 15min the times, atmosphere is Ar gas 0.8Pa, bias 1200V, and thickness is
110nm；The technological parameter of mixed metal adhesive layer plating step be 25min the times, atmosphere is Ar gas 0.8Pa, bias 220V, thick
Degree is 240nm；TiCrNC layers plating steps technological parameters be 65min, atmosphere Ar/N the time2/CH4=1:1:1,0.8Pa,
Bias 180V, thickness 800nm；Nanostructure C film functional layer plating step technological parameter be 70min the times, atmosphere is
Ar/CH4=1:2,1.2Pa, bias 240V, thickness 1000nm.
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| CN201810828325.7A CN108559964A (en) | 2018-07-25 | 2018-07-25 | A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film |
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| CN201810828325.7A CN108559964A (en) | 2018-07-25 | 2018-07-25 | A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film |
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Citations (8)
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|---|---|---|---|---|
| JPH06192833A (en) * | 1992-12-25 | 1994-07-12 | Anelva Corp | Sputtering device |
| JPH0920979A (en) * | 1995-07-04 | 1997-01-21 | Anelva Corp | Cathode electrode for magnetron sputtering |
| JP2001140069A (en) * | 1999-11-12 | 2001-05-22 | Anelva Corp | Magnetron cathode of sputtering system |
| JP2007254777A (en) * | 2006-03-20 | 2007-10-04 | Osg Corp | Coated tap with hard film |
| WO2012035603A1 (en) * | 2010-09-13 | 2012-03-22 | 株式会社シンクロン | Magnetic field generating device, magnetron cathode, and sputter device |
| CN103103489A (en) * | 2010-03-25 | 2013-05-15 | 佳能安内华股份有限公司 | Magnetron sputtering device |
| CN106119783A (en) * | 2016-08-08 | 2016-11-16 | 珠海罗西尼表业有限公司 | Diamond-like carbon film of functionally gradient and preparation method thereof and goods |
| CN208667835U (en) * | 2018-07-25 | 2019-03-29 | 衡阳舜达精工科技有限公司 | A kind of magnetic control sputtering cathode magnetic field arragement construction |
-
2018
- 2018-07-25 CN CN201810828325.7A patent/CN108559964A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06192833A (en) * | 1992-12-25 | 1994-07-12 | Anelva Corp | Sputtering device |
| JPH0920979A (en) * | 1995-07-04 | 1997-01-21 | Anelva Corp | Cathode electrode for magnetron sputtering |
| JP2001140069A (en) * | 1999-11-12 | 2001-05-22 | Anelva Corp | Magnetron cathode of sputtering system |
| TW555872B (en) * | 1999-11-12 | 2003-10-01 | Anelva Corp | Magnetron cathode of sputtering system |
| JP2007254777A (en) * | 2006-03-20 | 2007-10-04 | Osg Corp | Coated tap with hard film |
| CN103103489A (en) * | 2010-03-25 | 2013-05-15 | 佳能安内华股份有限公司 | Magnetron sputtering device |
| WO2012035603A1 (en) * | 2010-09-13 | 2012-03-22 | 株式会社シンクロン | Magnetic field generating device, magnetron cathode, and sputter device |
| CN106119783A (en) * | 2016-08-08 | 2016-11-16 | 珠海罗西尼表业有限公司 | Diamond-like carbon film of functionally gradient and preparation method thereof and goods |
| CN208667835U (en) * | 2018-07-25 | 2019-03-29 | 衡阳舜达精工科技有限公司 | A kind of magnetic control sputtering cathode magnetic field arragement construction |
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