CN208667835U - A kind of magnetic control sputtering cathode magnetic field arragement construction - Google Patents
A kind of magnetic control sputtering cathode magnetic field arragement construction Download PDFInfo
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- CN208667835U CN208667835U CN201821185646.1U CN201821185646U CN208667835U CN 208667835 U CN208667835 U CN 208667835U CN 201821185646 U CN201821185646 U CN 201821185646U CN 208667835 U CN208667835 U CN 208667835U
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Abstract
Magnetic control sputtering cathode magnetic field disclosed by the utility model arragement construction, including at least magnetron sputtering cathode main field array, the magnetic control sputtering cathode main field array includes the peripheral magnet for generating the centring magnet of central magnetic field and generating peripheral magnetic field, the periphery magnet is centered around the periphery of centring magnet, the centring magnet and peripheral magnet are each attached to upper magnet yoke, in lower yoke and central magnetic field and peripheral magnetic field is each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction is opposite with the peripheral magnetic direction, it constitutes closed field and forms runway between closed magnetic field.The design of the magnetic control sputtering cathode magnetic field arragement construction of the utility model unconfined can widen magnetic control sputtering cathode, and end non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.
Description
Technical field
The utility model relates to technical field of vacuum plating, in particular to a kind of magnetic control sputtering cathode magnetic field arragement construction.
Background technique
Magnetron sputtering belongs to physical gas phase deposition technology, and relative to arc ion plating (aip), magnetron sputtering is arranged by magnetic field
All great changes have taken place with changes of magnetic field for the influence of mode, sputter rate and sputter area.
Currently, magnetron sputtering is due to its depositing temperature is low, the film surface of preparation is smooth, binding force is high etc. advantages, in light
Plated film, medicine plated film, auto parts and components and other component of machine surface coating fields are learned to be widely used.
It is usual that existing magnetic control sputtering cathode generally comprises magnetic yoke, magnet, target surface and anode composition, traditional magnet arrangements
It is 3 column magnet arranged for interval in magnetic yoke, external magnetic field new magnetic field in arranges to form closed magnetic field in opposite direction, additional when having
When electric field, electric and magnetic fields form crossed field, and electronics is constrained near magnetic field, high plasma ionization region are formed, by target
Sputtering of materials comes out, and cation is pushed out sputter area, forms film near workpieces.According to the difference that magnetic field is arranged, it is divided into
Unbalanced magnetron sputtering and non-balance magnetically controlled sputter.For non-balance magnetically controlled sputter, the ion majority of ionization is constrained on target
Near face, the membrane structure of formation is not fine and close enough, and unbalanced magnetic field puts magnetic field with more outer, and cation is along magnetic induction line
Near workpieces are transported to, higher ionization energy is maintained, the film of formation is finer and close.
In general, to a rectangle magnetic controlled sputtering target, distance of the central magnetic field apart from fringe magnetic field is bigger, then non-homogeneous
Region is bigger, is approximately equal to whole effective magnetic field width.Traditional, future obtains broader magnetron sputtering ionization region, usually there is 2
Kind way.First, it is arranged using twin target, this method will not sacrifice the homogeneous area of magnetron sputtering, but design structure becomes
It obtains complicated.For this purpose, people develop the more runway magnetic fields of rectangular-ambulatory-plane again, both added one of magnetic field again in original external magnetic field periphery, such as
Shown in Fig. 1.This method increases effective ionization region really in the direction of the width, but in target end, sputtering and plated film are non-
Homogeneous area increases with the increase of magnetic field overall width, causes to be compressed in length direction row plated film homogeneous area.
To ensure effective uniform ionization region in target width direction, while target end Nonuniform Domain Simulation of Reservoir is reduced, this is practical
It is novel to propose block form magnetic field track layout, replace traditional more racetrack torus around arrangement.
Utility model content
The purpose of this utility model is that for, in target end, sputtering and plating present in the more runway magnetic fields of existing rectangular-ambulatory-plane
Film Nonuniform Domain Simulation of Reservoir increases with the increase of magnetic field overall width, causes compressed in length direction row plated film homogeneous area
Problem and a kind of effective uniform ionization region to ensure in target width direction is provided, while reducing target end Nonuniform Domain Simulation of Reservoir
Magnetic control sputtering cathode magnetic field arragement construction is increasing plasma ionization homogeneous area by block form magnetic field track layout
It compresses the non-homogeneous sputtering in target end and coating film area as far as possible simultaneously, improves target utilization and plating membrane efficiency.
In order to realize that above-mentioned purpose of utility model, technical solution used by the utility model are as follows:
Magnetic control sputtering cathode magnetic field arragement construction, including at least magnetron sputtering cathode main field array, the magnetic control
Sputter cathode main field array includes the peripheral magnet for generating the centring magnet of central magnetic field and generating peripheral magnetic field, described outer
Enclose the periphery that magnet is centered around centring magnet, the centring magnet and peripheral magnet is each attached to upper magnet yoke, in lower yoke and in
Core field and peripheral magnetic field be each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction and the peripheral magnetic direction on the contrary,
It constitutes closed field and forms runway between closed magnetic field.
In a preferred embodiment of the utility model, the centring magnet is one single-row, and the periphery magnet is
It is centered around a circle of the centring magnet periphery, periphery magnet described in the front and rear ends and lateral distance of the centring magnet
It is equidistant.
In a preferred embodiment of the utility model, the width of the centring magnet and peripheral magnet is 4-
13mm, wherein the width of the centring magnet is the 2/3 of peripheral magnet width.
In a preferred embodiment of the utility model, the centring magnet and the peripheral magnet are all arranged at an equal altitude
In upper magnet yoke, lower yoke, the upper magnet yoke, lower yoke thickness be the centring magnet and the peripheral magnet height
1/3。
In a preferred embodiment of the utility model, processed on the upper magnet yoke to place the center magnetic
First upper groove of iron and the second upper groove to place peripheral magnet, process in the lower yoke to the center of placing
First lower groove of magnet and the second lower groove to place peripheral magnet, the upper/lower terminal of the centring magnet are inserted respectively
Enter to the first upper groove on the upper magnet yoke in the first lower groove neutralized in the lower yoke, it is described periphery magnet it is upper,
The second upper groove that lower both ends are inserted respectively on the upper magnet yoke neutralizes in the second lower groove in the lower yoke.
In a preferred embodiment of the utility model, the upper magnet yoke and lower yoke are all made of high permeability material system
At.
In a preferred embodiment of the utility model, the depth of first upper groove and the second upper groove is upper magnetic
The depth of the 1/2 of yoke thickness, first lower groove and the second lower groove is the 1/2 of lower yoke thickness.
In a preferred embodiment of the utility model, magnetic control sputtering cathode magnetic field arragement construction is by two or more
Magnetic control sputtering cathode main field array parallel composition, form more than two runways arranged side by side；Wherein two neighboring magnetic control
Peripheral magnet in sputter cathode main field array some share.
The design of the magnetic control sputtering cathode magnetic field arragement construction of the utility model unconfined can widen magnetron sputtering yin
Pole, and end non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the polycyclic road magnetic field arrangement of tradition of the utility model.
Fig. 2 is the magnetic control sputtering cathode magnetic field that two magnetic control sputtering cathode main field array parallels of the utility model are formed
Arragement construction schematic diagram.
Fig. 3 is the magnetic control sputtering cathode magnetic field that three magnetic control sputtering cathode main field array parallels of the utility model are formed
Arragement construction prepares the arrangement schematic diagram of nanostructure C film.
Specific embodiment
Referring to fig. 2, the magnetic control sputtering cathode magnetic field arragement construction of the utility model, the basic magnetic of You Lianglie magnetic control sputtering cathode
Field array 100,100a are formed side by side, and each magnetic control sputtering cathode main field array 100,100a include generating central magnetic field
Centring magnet 110,110a and the peripheral magnet 120, the 120a that generate peripheral magnetic field, peripheral magnet 120 are centered around centring magnet 110
Periphery, peripheral magnet 120a is centered around the periphery of centring magnet 110a.The peripheral magnetic of some in peripheral magnet 120,120a
Iron is shared.
Each magnetic control sputtering cathode main field array 100, the centring magnet 110 in 100a, 110a and peripheral magnet
120,120a be each attached to upper magnet yoke (not shown), in lower yoke (not shown) and central magnetic field and peripheral magnetic field it is equal
Perpendicular to upper magnet yoke, lower yoke, central magnetic field direction and the peripheral magnetic direction are on the contrary, constitute closed field and in closed magnetic field
Between formed runway 130,130a.Two runways 130,130a are arranged side by side.
Each magnetic control sputtering cathode main field array 100, the centring magnet 110 in 100a, 110a are one single-row, outside
Enclosing magnet 210 is the circle for being centered around 110 periphery of centring magnet, the front and rear ends and lateral distance periphery magnetic of centring magnet 110
Iron 210 is equidistant, and peripheral magnet 210a is the circle for being centered around the periphery centring magnet 110a, before centring magnet 110a,
Both ends and lateral distance periphery magnet 210a are equidistant afterwards.
The width of centring magnet 110,110a and peripheral magnet 210,210a is 4-13mm, wherein centring magnet 110,
The width of 110a be peripheral magnet 210,210a width 2/3.
Centring magnet 110,110a and peripheral magnet 210,210a are all arranged at an equal altitude in upper magnet yoke, lower yoke, upper magnetic
Yoke, lower yoke thickness be the 1/3 of centring magnet 110,110a and peripheral magnet 210,210a height.
The first upper groove to place centring magnet 110,110a is processed on upper magnet yoke and to place peripheral magnetic
Second upper groove of iron 210,210a, processed in lower yoke the first lower groove to place centring magnet 110,110a and
To place the second lower groove of peripheral magnet 210,210a, centring magnet 110,110a upper/lower terminal be inserted respectively into
In the first lower groove in the first upper groove in magnetic yoke and in lower yoke, the upper/lower terminal difference of peripheral magnet 210,210a
The second upper groove being inserted on upper magnet yoke neutralizes in the second lower groove in the lower yoke.
Upper magnet yoke and lower yoke are all made of high permeability material and are made.The depth of first upper groove and the second upper groove is upper magnetic
The depth of the 1/2 of yoke thickness, first lower groove and the second lower groove is the 1/2 of lower yoke thickness.
The design of the magnetic control sputtering cathode magnetic field arragement construction of the utility model unconfined can widen magnetron sputtering yin
Pole, and end non-uniform areas is solely dependent upon the end Nonuniform Domain Simulation of Reservoir to form magnetic field runway basic unit.
The method that the utility model prepares nanostructure C film using above-mentioned magnetic control sputtering cathode magnetic field arragement construction,
Include the following steps:
Step 1: workpiece to be plated 700 is mounted in positioned at magnetic control sputtering cathode magnetic field arragement construction 300 and the first target 400, the
On work rest 600 among two target 500, wherein the first target 400 is Cr target, the second target is Ti target；Magnetic control sputtering cathode magnetic field cloth
Structure 300 is set to be made of three column magnetic control sputtering cathode main field arrays；
Step 2: the first target 400 and the second target 500 are connected on same bipolar pulse intermediate frequency power supply, by workpiece to be plated 700
Connect on grid bias power supply with work rest 600, wherein the frequency of bipolar pulse intermediate frequency power supply be 120Hz, duty ratio 50%, partially
The frequency of voltage source is 60Hz, and the target height of duty ratio 30%, the first target 400 and the second target 500 is 250mm, 400 He of the first target
The target width of second target 500 is 155mm, the target current 10A of the first target and the second target；
Step 3: mixed metal implanted layer plating step, mixed metal adhesive layer plating step, TiCrNC layers of plating step are successively carried out
Rapid and nanostructure C film functional layer plates step, finally obtains the workpiece of the nanostructure C film with a thickness of 2150nm,
The technological parameter of middle mixed metal implanted layer plating step be 15min the time, atmosphere is Ar gas 0.8Pa, bias 1200V, thickness
For 110nm；The technological parameter of mixed metal adhesive layer plating step be 25min the time, atmosphere is Ar gas 0.8Pa, bias 220V,
With a thickness of 240nm；TiCrNC layers plating steps technological parameters be 65min, atmosphere Ar/N the time2/CH4=1:1:1,
0.8Pa, bias 180V, with a thickness of 800nm；Nanostructure C film functional layer plating step technological parameter be 70min the time,
Atmosphere is Ar/CH4=1:2,1.2Pa, bias 240V, with a thickness of 1000nm.
The utility model uses the wide target surface of magnetic field optimization design, and the film for obtaining 2150nm thickness needs time 2 h
55 minutes, than the film the street time 30 minutes 1 hour that traditional target cathode obtains same thickness.
The nanostructure C film that the utility model obtains reaches HF1 grades (traditional HF2 grades) in plunger surface binding force,
Hardness 31Gpa is higher than conventional cathode target 17%.
Claims (8)
1. a kind of magnetic control sputtering cathode magnetic field arragement construction, which is characterized in that including at least magnetron sputtering cathode main field
Array, the magnetic control sputtering cathode main field array include generating the centring magnet of central magnetic field and generating the outer of peripheral magnetic field
Enclose magnet, the periphery magnet is centered around the periphery of centring magnet, the centring magnet and peripheral magnet be each attached to upper magnet yoke,
In lower yoke and central magnetic field and peripheral magnetic field is each perpendicular to upper magnet yoke, lower yoke, the central magnetic field direction and the periphery
Magnetic direction is on the contrary, constituting closed field and forming runway between closed magnetic field.
2. magnetic control sputtering cathode magnetic field as described in claim 1 arragement construction, which is characterized in that the centring magnet is one
Single-row, the periphery magnet is the circle for being centered around the centring magnet periphery, the front and rear ends of the centring magnet and side
Apart from being equidistant for the peripheral magnet.
3. magnetic control sputtering cathode magnetic field as described in claim 1 arragement construction, which is characterized in that the centring magnet and periphery
The width of magnet is 4-13mm, wherein the width of the centring magnet is the 2/3 of peripheral magnet width.
4. magnetic control sputtering cathode magnetic field as described in claim 1 arragement construction, which is characterized in that the centring magnet and described
Peripheral magnet is all arranged at an equal altitude in upper magnet yoke, lower yoke, the upper magnet yoke, lower yoke thickness be the centring magnet
With the 1/3 of the peripheral magnet height.
5. magnetic control sputtering cathode magnetic field as claimed in claim 4 arragement construction, which is characterized in that processed on the upper magnet yoke
The first upper groove to place the centring magnet and the second upper groove to place peripheral magnet out, in the lower yoke
On process the first lower groove to place centring magnet and the second lower groove to place peripheral magnet, the center magnetic
The first upper groove that the upper/lower terminal of iron is inserted respectively on the upper magnet yoke neutralizes the first lower groove in the lower yoke
In, the upper/lower terminal of the periphery magnet is inserted respectively into the second upper groove on the upper magnet yoke and neutralizes in the lower yoke
The second lower groove in.
6. magnetic control sputtering cathode magnetic field as claimed in claim 4 arragement construction, which is characterized in that the upper magnet yoke and lower yoke
High permeability material is all made of to be made.
7. magnetic control sputtering cathode magnetic field as claimed in claim 5 arragement construction, which is characterized in that first upper groove and
The depth of two upper grooves is the 1/2 of upper magnet yoke thickness, and the depth of first lower groove and the second lower groove is lower yoke thickness
1/2.
8. the magnetic control sputtering cathode magnetic field arragement construction as described in any one of claim 1 to 7 claim, which is characterized in that
Magnetic control sputtering cathode magnetic field arragement construction is made of more than two magnetic control sputtering cathode main field array parallels, is formed
More than two runways arranged side by side；Wherein the peripheral magnet in two neighboring magnetic control sputtering cathode main field array some
It shares.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821185646.1U CN208667835U (en) | 2018-07-25 | 2018-07-25 | A kind of magnetic control sputtering cathode magnetic field arragement construction |
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| CN201821185646.1U CN208667835U (en) | 2018-07-25 | 2018-07-25 | A kind of magnetic control sputtering cathode magnetic field arragement construction |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108559964A (en) * | 2018-07-25 | 2018-09-21 | 衡阳舜达精工科技有限公司 | A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108559964A (en) * | 2018-07-25 | 2018-09-21 | 衡阳舜达精工科技有限公司 | A kind of magnetic control sputtering cathode magnetic field arrangement and the method for being used to prepare nanometer C film |
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