TW200524052A - Heat-processing method and apparatus for semiconductor process - Google Patents

Heat-processing method and apparatus for semiconductor process Download PDF

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Publication number
TW200524052A
TW200524052A TW093124555A TW93124555A TW200524052A TW 200524052 A TW200524052 A TW 200524052A TW 093124555 A TW093124555 A TW 093124555A TW 93124555 A TW93124555 A TW 93124555A TW 200524052 A TW200524052 A TW 200524052A
Authority
TW
Taiwan
Prior art keywords
reaction chamber
heat treatment
pressure
temperature
reaction tube
Prior art date
Application number
TW093124555A
Other languages
English (en)
Chinese (zh)
Other versions
TWI362074B (https=
Inventor
Takehiko Fujita
Akitake Tamura
Keisuke Suzuki
Kazuhide Hasebe
Mitsuhiro Okada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200524052A publication Critical patent/TW200524052A/zh
Application granted granted Critical
Publication of TWI362074B publication Critical patent/TWI362074B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW093124555A 2003-08-28 2004-08-16 Heat-processing method and apparatus for semiconductor process TW200524052A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003304297A JP4272484B2 (ja) 2003-08-28 2003-08-28 熱処理方法

Publications (2)

Publication Number Publication Date
TW200524052A true TW200524052A (en) 2005-07-16
TWI362074B TWI362074B (https=) 2012-04-11

Family

ID=34408021

Family Applications (2)

Application Number Title Priority Date Filing Date
TW093124555A TW200524052A (en) 2003-08-28 2004-08-16 Heat-processing method and apparatus for semiconductor process
TW100125689A TW201207948A (en) 2003-08-28 2004-08-16 Heat treatment method and heat treatment equipment

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW100125689A TW201207948A (en) 2003-08-28 2004-08-16 Heat treatment method and heat treatment equipment

Country Status (4)

Country Link
US (1) US7211514B2 (https=)
JP (1) JP4272484B2 (https=)
KR (1) KR100870608B1 (https=)
TW (2) TW200524052A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906856A (zh) * 2010-03-24 2013-01-30 朗姆研究公司 减少在处理工具中通过移动机构所产生的颗粒污染
TWI660409B (zh) * 2017-02-23 2019-05-21 日商斯庫林集團股份有限公司 熱處理方法及熱處理裝置
CN111370284A (zh) * 2020-03-13 2020-07-03 北京北方华创微电子装备有限公司 半导体热处理设备的清扫方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450664B2 (ja) * 2003-06-02 2010-04-14 東京エレクトロン株式会社 基板処理装置及び基板搬送方法
JP2006229040A (ja) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd 熱処理方法および熱処理装置
TWD122892S1 (zh) * 2006-06-16 2008-05-11 東京威力科創股份有限公司 半導體製造用散熱抑制環
USD588078S1 (en) * 2006-06-16 2009-03-10 Tokyo Electron Limited Heat dissipation deterrence link for semiconductor manufacture
JP6082283B2 (ja) * 2012-05-30 2017-02-15 東京エレクトロン株式会社 筐体及びこれを含む基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289880A (ja) 1997-04-16 1998-10-27 Nec Kyushu Ltd 減圧気相成長装置
KR20000018773A (ko) * 1998-09-04 2000-04-06 윤종용 화학 기상 증착장치
JP3555536B2 (ja) 2000-01-31 2004-08-18 ウシオ電機株式会社 ランプユニット
JP3998906B2 (ja) * 2000-09-28 2007-10-31 株式会社日立国際電気 半導体装置の製造方法
JP3753985B2 (ja) 2001-09-26 2006-03-08 セイコーインスツル株式会社 減圧気相成長装置
JP2003100645A (ja) 2001-09-27 2003-04-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2003183837A (ja) * 2001-12-12 2003-07-03 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906856A (zh) * 2010-03-24 2013-01-30 朗姆研究公司 减少在处理工具中通过移动机构所产生的颗粒污染
CN102906856B (zh) * 2010-03-24 2015-07-22 朗姆研究公司 减少在处理工具中通过移动机构所产生的颗粒污染
TWI660409B (zh) * 2017-02-23 2019-05-21 日商斯庫林集團股份有限公司 熱處理方法及熱處理裝置
US10636676B2 (en) 2017-02-23 2020-04-28 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus of light irradiation type
CN111370284A (zh) * 2020-03-13 2020-07-03 北京北方华创微电子装备有限公司 半导体热处理设备的清扫方法
CN111370284B (zh) * 2020-03-13 2022-12-09 北京北方华创微电子装备有限公司 半导体热处理设备的清扫方法

Also Published As

Publication number Publication date
KR20050021339A (ko) 2005-03-07
JP4272484B2 (ja) 2009-06-03
US20050095826A1 (en) 2005-05-05
TWI362075B (https=) 2012-04-11
KR100870608B1 (ko) 2008-11-25
TWI362074B (https=) 2012-04-11
US7211514B2 (en) 2007-05-01
TW201207948A (en) 2012-02-16
JP2005079131A (ja) 2005-03-24

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