TW200518355A - Light emitting diode with porous sic substrate and method for fabricating - Google Patents

Light emitting diode with porous sic substrate and method for fabricating

Info

Publication number
TW200518355A
TW200518355A TW093129268A TW93129268A TW200518355A TW 200518355 A TW200518355 A TW 200518355A TW 093129268 A TW093129268 A TW 093129268A TW 93129268 A TW93129268 A TW 93129268A TW 200518355 A TW200518355 A TW 200518355A
Authority
TW
Taiwan
Prior art keywords
semiconductor material
electrolyte
fabricating
light emitting
emitting diode
Prior art date
Application number
TW093129268A
Other languages
English (en)
Chinese (zh)
Inventor
Ting Li
James Ibbetson
Bernd Keller
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200518355A publication Critical patent/TW200518355A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
TW093129268A 2003-09-30 2004-09-27 Light emitting diode with porous sic substrate and method for fabricating TW200518355A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/676,953 US6972438B2 (en) 2003-09-30 2003-09-30 Light emitting diode with porous SiC substrate and method for fabricating

Publications (1)

Publication Number Publication Date
TW200518355A true TW200518355A (en) 2005-06-01

Family

ID=34422124

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129268A TW200518355A (en) 2003-09-30 2004-09-27 Light emitting diode with porous sic substrate and method for fabricating

Country Status (8)

Country Link
US (1) US6972438B2 (cg-RX-API-DMAC10.html)
EP (1) EP1668710B1 (cg-RX-API-DMAC10.html)
JP (1) JP5748384B2 (cg-RX-API-DMAC10.html)
KR (1) KR20060090813A (cg-RX-API-DMAC10.html)
CN (1) CN100470854C (cg-RX-API-DMAC10.html)
CA (1) CA2536154A1 (cg-RX-API-DMAC10.html)
TW (1) TW200518355A (cg-RX-API-DMAC10.html)
WO (1) WO2005034254A1 (cg-RX-API-DMAC10.html)

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US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
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JP5330880B2 (ja) * 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
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WO2014004261A1 (en) 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
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US9711352B2 (en) 2013-03-15 2017-07-18 Yale University Large-area, laterally-grown epitaxial semiconductor layers
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
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CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
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Also Published As

Publication number Publication date
CN1860619A (zh) 2006-11-08
EP1668710B1 (en) 2014-12-24
KR20060090813A (ko) 2006-08-16
US6972438B2 (en) 2005-12-06
US20050184307A1 (en) 2005-08-25
CA2536154A1 (en) 2005-04-14
WO2005034254A1 (en) 2005-04-14
CN100470854C (zh) 2009-03-18
EP1668710A1 (en) 2006-06-14
JP5748384B2 (ja) 2015-07-15
JP2007507895A (ja) 2007-03-29

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