JP5748384B2 - 多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法 - Google Patents

多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法 Download PDF

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Publication number
JP5748384B2
JP5748384B2 JP2006533962A JP2006533962A JP5748384B2 JP 5748384 B2 JP5748384 B2 JP 5748384B2 JP 2006533962 A JP2006533962 A JP 2006533962A JP 2006533962 A JP2006533962 A JP 2006533962A JP 5748384 B2 JP5748384 B2 JP 5748384B2
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led
light emitting
porous layer
light
substrate
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Expired - Lifetime
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Japanese (ja)
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JP2007507895A (ja
JP2007507895A5 (cg-RX-API-DMAC10.html
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リ ティン
リ ティン
イベットソン ジェームズ
イベットソン ジェームズ
ケラー ブレンド
ケラー ブレンド
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
JP2006533962A 2003-09-30 2004-09-21 多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法 Expired - Lifetime JP5748384B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/676,953 US6972438B2 (en) 2003-09-30 2003-09-30 Light emitting diode with porous SiC substrate and method for fabricating
US10/676,953 2003-09-30
PCT/US2004/031050 WO2005034254A1 (en) 2003-09-30 2004-09-21 Light emitting diode with porous sic substrate and method for fabricating

Publications (3)

Publication Number Publication Date
JP2007507895A JP2007507895A (ja) 2007-03-29
JP2007507895A5 JP2007507895A5 (cg-RX-API-DMAC10.html) 2007-11-08
JP5748384B2 true JP5748384B2 (ja) 2015-07-15

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JP2006533962A Expired - Lifetime JP5748384B2 (ja) 2003-09-30 2004-09-21 多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法

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Country Link
US (1) US6972438B2 (cg-RX-API-DMAC10.html)
EP (1) EP1668710B1 (cg-RX-API-DMAC10.html)
JP (1) JP5748384B2 (cg-RX-API-DMAC10.html)
KR (1) KR20060090813A (cg-RX-API-DMAC10.html)
CN (1) CN100470854C (cg-RX-API-DMAC10.html)
CA (1) CA2536154A1 (cg-RX-API-DMAC10.html)
TW (1) TW200518355A (cg-RX-API-DMAC10.html)
WO (1) WO2005034254A1 (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
TW200518355A (en) 2005-06-01
CN1860619A (zh) 2006-11-08
EP1668710B1 (en) 2014-12-24
KR20060090813A (ko) 2006-08-16
US6972438B2 (en) 2005-12-06
US20050184307A1 (en) 2005-08-25
CA2536154A1 (en) 2005-04-14
WO2005034254A1 (en) 2005-04-14
CN100470854C (zh) 2009-03-18
EP1668710A1 (en) 2006-06-14
JP2007507895A (ja) 2007-03-29

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