TW200518217A - Selective isotropic etch for titanium-based materials - Google Patents
Selective isotropic etch for titanium-based materialsInfo
- Publication number
- TW200518217A TW200518217A TW093123935A TW93123935A TW200518217A TW 200518217 A TW200518217 A TW 200518217A TW 093123935 A TW093123935 A TW 093123935A TW 93123935 A TW93123935 A TW 93123935A TW 200518217 A TW200518217 A TW 200518217A
- Authority
- TW
- Taiwan
- Prior art keywords
- titanium
- based materials
- isotropic etch
- selective isotropic
- etching
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052719 titanium Inorganic materials 0.000 title abstract 2
- 239000010936 titanium Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Chemical group 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Geometry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/675,263 US7078337B2 (en) | 2003-09-30 | 2003-09-30 | Selective isotropic etch for titanium-based materials |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200518217A true TW200518217A (en) | 2005-06-01 |
Family
ID=33311158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093123935A TW200518217A (en) | 2003-09-30 | 2004-08-10 | Selective isotropic etch for titanium-based materials |
Country Status (5)
Country | Link |
---|---|
US (2) | US7078337B2 (zh) |
JP (1) | JP4855665B2 (zh) |
KR (1) | KR101214818B1 (zh) |
GB (1) | GB2408848A (zh) |
TW (1) | TW200518217A (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60320391D1 (de) * | 2003-07-04 | 2008-05-29 | St Microelectronics Srl | Herstellungsverfahren für eine Halbleitervorrichtung mit einem hängenden Mikrosystem und entsprechende Vorrichtung |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
GB0523715D0 (en) * | 2005-11-22 | 2005-12-28 | Cavendish Kinetics Ltd | Method of minimising contact area |
US7763546B2 (en) * | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US7875484B2 (en) * | 2006-11-20 | 2011-01-25 | Alces Technology, Inc. | Monolithic IC and MEMS microfabrication process |
DE112007002810T5 (de) | 2007-01-05 | 2009-11-12 | Nxp B.V. | Ätzverfahren mit verbesserter Kontrolle der kritischen Ausdehnung eines Strukturelements an der Unterseite dicker Schichten |
WO2009041948A1 (en) * | 2007-09-28 | 2009-04-02 | Qualcomm Mems Technologies, Inc. | Multicomponent sacrificial structure |
US8507385B2 (en) * | 2008-05-05 | 2013-08-13 | Shanghai Lexvu Opto Microelectronics Technology Co., Ltd. | Method for processing a thin film micro device on a substrate |
US7928577B2 (en) * | 2008-07-16 | 2011-04-19 | Micron Technology, Inc. | Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same |
US7719754B2 (en) * | 2008-09-30 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Multi-thickness layers for MEMS and mask-saving sequence for same |
CN102001616A (zh) * | 2009-08-31 | 2011-04-06 | 上海丽恒光微电子科技有限公司 | 装配和封装微型机电系统装置的方法 |
DE102010000666A1 (de) * | 2010-01-05 | 2011-07-07 | Robert Bosch GmbH, 70469 | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
US8530985B2 (en) * | 2010-03-18 | 2013-09-10 | Chia-Ming Cheng | Chip package and method for forming the same |
US9335262B2 (en) | 2011-08-25 | 2016-05-10 | Palo Alto Research Center Incorporated | Gap distributed Bragg reflectors |
US8613863B2 (en) | 2011-11-29 | 2013-12-24 | Intermolecular, Inc. | Methods for selective etching of a multi-layer substrate |
US8853046B2 (en) | 2012-02-16 | 2014-10-07 | Intermolecular, Inc. | Using TiON as electrodes and switching layers in ReRAM devices |
US8658511B1 (en) | 2012-12-20 | 2014-02-25 | Intermolecular, Inc. | Etching resistive switching and electrode layers |
US9085120B2 (en) * | 2013-08-26 | 2015-07-21 | International Business Machines Corporation | Solid state nanopore devices for nanopore applications to improve the nanopore sensitivity and methods of manufacture |
CN107709225B (zh) * | 2015-06-22 | 2022-04-26 | 英特尔公司 | 集成mems结构与互连和过孔 |
CN107329615B (zh) * | 2017-06-30 | 2020-06-16 | 上海天马微电子有限公司 | 显示面板及显示装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5127833A (ja) * | 1974-09-02 | 1976-03-09 | Nippon Telegraph & Telephone | Chitaniumunoshokukokuhoho |
JPS59140233A (ja) * | 1983-01-31 | 1984-08-11 | Shin Etsu Chem Co Ltd | 合成樹脂成形品の表面処理方法 |
US5302240A (en) * | 1991-01-22 | 1994-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5326427A (en) * | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5413670A (en) * | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5376236A (en) * | 1993-10-29 | 1994-12-27 | At&T Corp. | Process for etching titanium at a controllable rate |
US5399237A (en) * | 1994-01-27 | 1995-03-21 | Applied Materials, Inc. | Etching titanium nitride using carbon-fluoride and carbon-oxide gas |
JP3440599B2 (ja) * | 1995-01-24 | 2003-08-25 | 松下電器産業株式会社 | ビアホール形成方法 |
US5872062A (en) * | 1996-05-20 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for etching titanium nitride layers |
US5843822A (en) * | 1997-02-05 | 1998-12-01 | Mosel Vitelic Inc. | Double-side corrugated cylindrical capacitor structure of high density DRAMs |
US5872061A (en) * | 1997-10-27 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etch method for forming residue free fluorine containing plasma etched layers |
US6177351B1 (en) * | 1997-12-24 | 2001-01-23 | Texas Instruments Incorporated | Method and structure for etching a thin film perovskite layer |
JPH11354499A (ja) * | 1998-04-07 | 1999-12-24 | Oki Electric Ind Co Ltd | コンタクトホール等の形成方法 |
US6117786A (en) * | 1998-05-05 | 2000-09-12 | Lam Research Corporation | Method for etching silicon dioxide using fluorocarbon gas chemistry |
US6159385A (en) * | 1998-05-08 | 2000-12-12 | Rockwell Technologies, Llc | Process for manufacture of micro electromechanical devices having high electrical isolation |
JP2000040691A (ja) * | 1998-07-21 | 2000-02-08 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
DE19847455A1 (de) | 1998-10-15 | 2000-04-27 | Bosch Gmbh Robert | Verfahren zur Bearbeitung von Silizium mittels Ätzprozessen |
US6693038B1 (en) * | 1999-02-05 | 2004-02-17 | Taiwan Semiconductor Manufacturing Company | Method for forming electrical contacts through multi-level dielectric layers by high density plasma etching |
EP1077475A3 (en) * | 1999-08-11 | 2003-04-02 | Applied Materials, Inc. | Method of micromachining a multi-part cavity |
US6348420B1 (en) * | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
US6197610B1 (en) * | 2000-01-14 | 2001-03-06 | Ball Semiconductor, Inc. | Method of making small gaps for small electrical/mechanical devices |
JP2002025979A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6677225B1 (en) * | 2000-07-14 | 2004-01-13 | Zyvex Corporation | System and method for constraining totally released microcomponents |
US6531404B1 (en) * | 2000-08-04 | 2003-03-11 | Applied Materials Inc. | Method of etching titanium nitride |
US7311852B2 (en) * | 2001-03-30 | 2007-12-25 | Lam Research Corporation | Method of plasma etching low-k dielectric materials |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6720256B1 (en) * | 2002-12-04 | 2004-04-13 | Taiwan Semiconductor Manufacturing Company | Method of dual damascene patterning |
-
2003
- 2003-09-30 US US10/675,263 patent/US7078337B2/en not_active Expired - Lifetime
-
2004
- 2004-08-10 TW TW093123935A patent/TW200518217A/zh unknown
- 2004-09-21 GB GB0420952A patent/GB2408848A/en not_active Withdrawn
- 2004-09-27 JP JP2004278932A patent/JP4855665B2/ja not_active Expired - Lifetime
- 2004-09-30 KR KR1020040078027A patent/KR101214818B1/ko not_active IP Right Cessation
-
2006
- 2006-03-06 US US11/368,780 patent/US7476951B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20060226553A1 (en) | 2006-10-12 |
KR20050032010A (ko) | 2005-04-06 |
US20050068608A1 (en) | 2005-03-31 |
US7476951B2 (en) | 2009-01-13 |
JP2005105416A (ja) | 2005-04-21 |
US7078337B2 (en) | 2006-07-18 |
GB0420952D0 (en) | 2004-10-20 |
KR101214818B1 (ko) | 2012-12-24 |
GB2408848A (en) | 2005-06-08 |
JP4855665B2 (ja) | 2012-01-18 |
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