JP2005534518A - シリコン層および不動態層を有する層系、シリコン層上に不動態層を形成する方法およびこれらの使用 - Google Patents
シリコン層および不動態層を有する層系、シリコン層上に不動態層を形成する方法およびこれらの使用 Download PDFInfo
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- JP2005534518A JP2005534518A JP2004528292A JP2004528292A JP2005534518A JP 2005534518 A JP2005534518 A JP 2005534518A JP 2004528292 A JP2004528292 A JP 2004528292A JP 2004528292 A JP2004528292 A JP 2004528292A JP 2005534518 A JP2005534518 A JP 2005534518A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 44
- 238000002161 passivation Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000004809 Teflon Substances 0.000 claims description 16
- 229920006362 Teflon® Polymers 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- -1 halogen fluorides Chemical class 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 194
- 230000008569 process Effects 0.000 description 32
- 239000000758 substrate Substances 0.000 description 10
- 239000000178 monomer Substances 0.000 description 8
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 8
- 150000002222 fluorine compounds Chemical class 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005923 long-lasting effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00571—Avoid or control under-cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/016—Passivation
Abstract
Description
従ってポリマーのテフロン状層を直接原子の酸化珪素不動態層に少なくともほぼ一致して堆積することは容易に可能でなく、その際酸化物不動態層の損傷または除去を受け入れなくてよい。
シリコン層および部分的に表面的に被覆された不動態層を有する層系の実施例およびシリコン層上にこの種の不動態層を製造する方法が図1により説明される。特にまずシリコンウェーハ、ドイツ特許第19747455号による処理工程に適した埋め込まれた酸化物層を有する層系から出発する。ポリシリコン層は機能的シリコン層を有し、機能的シリコン層上にフォトラックマスクが設けられ、前記マスクがシリコン層内に形成すべき構造を決定する。
Claims (12)
- 少なくとも部分的に表面的に不動態層(17)が設けられているシリコン層を有する層系において、不動態層(17)が第1の少なくとも広い範囲の無機部分層(14)および第2の少なくとも広い範囲のポリマーの部分層(15)を有することを特徴とするシリコン層を有する層系。
- 第1の部分層(14)が少なくとも広い範囲の酸化物層、特に酸化珪素層からなる請求項1記載の層系。
- 第1の部分層(14)が1nm〜100nm、特に5nm〜30nmの厚さを有する請求項1または2記載の層系。
- 第1の部分層(14)が直接シリコン層(11)の上にまたはシリコン層(11)の上に存在する酸化珪素からなる層の上に設けられている請求項1から3までのいずれか1項記載の層系。
- 第2の部分層(15)が少なくとも広い範囲のテフロン層またはテフロン状層である請求項1から4までのいずれか1項記載の層系。
- 第2の部分層(15)が30nm〜800nm、特に50〜400nmの厚さを有する請求項1から5までのいずれか1項記載の層系。
- 不動態層(17)がClF3またはBrF3のようなガス状ハロゲンフッ化物のエッチング攻撃に対してシリコン層(11)を保護する層である請求項1から6までのいずれか1項記載の層系。
- 不動態層(17)がミクロスケールまたはナノスケールのClF3またはBrF3のようなガスまたは蒸気を透過する通路を含まない請求項1から7までのいずれか1項記載の層系。
- 不動態層(17)の内部に少なくとも部分的に第1の部分層(14)と第2の部分層(15)の間に存在する、2つの部分層(14,15)に隣接する中間層が設けられ、その際中間層が第1の部分層(14)に隣接する表面領域で少なくとも第1の部分層(14)に類似して形成され、および第2の部分層(15)に隣接する表面領域で少なくとも第2の部分層(15)に類似して形成されるような組成を有し、その際中間層の組成が連続的にまたは段階的に少なくとも第1の部分層(14)に類似して相当する組成から少なくとも第2の部分層(15)に類似して相当する組成に移行する請求項1から8までのいずれか1項記載の層系。
- 中間層が珪素、酸素、炭素およびフッ素を含有する請求項9記載の層系。
- シリコン層上に、特に請求項1から10までのいずれか1項記載の層系の不動態層を製造する方法であり、その際シリコン層(11)の上に少なくとも部分的に第1の少なくとも広い範囲の無機部分層(14)を形成し、第1の部分層(14)の上に少なくとも部分的に中間層を形成し、前記中間層の上に少なくとも部分的に第2の少なくとも広い範囲のポリマーの部分層(15)を形成し、前記部分層が不動態層(17)を形成し、その際中間層の形成を、前記中間層が第1の部分層(14)に隣接する表面領域で少なくとも第1の部分層(14)に類似しておよび第2の部分層(15)に隣接する表面領域で少なくとも第2の部分層(15)に類似して形成されるように行い、中間層の組成が連続的にまたは段階的に少なくとも第1の部分層に類似して相当する組成から少なくとも第2の部分層に類似して相当する組成に移行する、シリコン層上に不動態層を製造する方法。
- 特にシリコン内の異方性エッチング技術の一時的使用によりおよびシリコン内の等方性エッチング技術の一時的使用により、シリコン内に少なくとも広い範囲のまたは部分的に自立する構造を製造する際の請求項1から10までのいずれか1項記載の層系または請求項11記載の方法の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10234589A DE10234589A1 (de) | 2002-07-30 | 2002-07-30 | Schichtsystem mit einer Siliziumschicht und einer Passivierschicht, Verfahren zur Erzeugung einer Passivierschicht auf einer Siliziumschicht und deren Verwendung |
PCT/DE2003/001436 WO2004016546A2 (de) | 2002-07-30 | 2003-05-06 | Schichtsystem mit einer siliziumschicht und einer passivierschicht, verfahren zur erzeugung einer passivierschicht auf einer siliziumschicht und deren verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005534518A true JP2005534518A (ja) | 2005-11-17 |
JP4617158B2 JP4617158B2 (ja) | 2011-01-19 |
Family
ID=30128508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004528292A Expired - Fee Related JP4617158B2 (ja) | 2002-07-30 | 2003-05-06 | シリコン層および不動態層を有する層系、シリコン層上に不動態層を形成する方法およびこれらの使用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7642545B2 (ja) |
EP (1) | EP1527011B1 (ja) |
JP (1) | JP4617158B2 (ja) |
KR (1) | KR101035840B1 (ja) |
DE (2) | DE10234589A1 (ja) |
WO (1) | WO2004016546A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011506119A (ja) * | 2007-12-21 | 2011-03-03 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | 微小電気機械システムの生産方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10234589A1 (de) * | 2002-07-30 | 2004-02-12 | Robert Bosch Gmbh | Schichtsystem mit einer Siliziumschicht und einer Passivierschicht, Verfahren zur Erzeugung einer Passivierschicht auf einer Siliziumschicht und deren Verwendung |
DE10237787A1 (de) * | 2002-08-17 | 2004-03-04 | Robert Bosch Gmbh | Schichtsystem mit einer Siliziumschicht und einer Passivierschicht, Verfahren zur Erzeugung einer Passivierschicht auf einer Siliziumschicht und deren Verwendung |
US7892972B2 (en) * | 2006-02-03 | 2011-02-22 | Micron Technology, Inc. | Methods for fabricating and filling conductive vias and conductive vias so formed |
KR100854897B1 (ko) * | 2006-12-28 | 2008-08-28 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 형성 방법 |
US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
KR101881857B1 (ko) | 2012-08-27 | 2018-08-24 | 삼성전자주식회사 | 계단형 패턴 형성 방법 |
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US4576834A (en) * | 1985-05-20 | 1986-03-18 | Ncr Corporation | Method for forming trench isolation structures |
JPH05136105A (ja) * | 1991-04-12 | 1993-06-01 | Motorola Inc | 構造面を選択的にエツチングする方法 |
JPH05217961A (ja) * | 1992-02-07 | 1993-08-27 | Nippon Telegr & Teleph Corp <Ntt> | シリコンの精密加工方法 |
WO2000067307A1 (de) * | 1999-04-29 | 2000-11-09 | Robert Bosch Gmbh | Verfahren zum plasmaätzen von silizium |
JP2001305077A (ja) * | 2000-02-14 | 2001-10-31 | Leica Microsystems Lithography Gmbh | 半導体基板上の構造の検査方法 |
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DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
DE4420962C2 (de) | 1994-06-16 | 1998-09-17 | Bosch Gmbh Robert | Verfahren zur Bearbeitung von Silizium |
DE19706682C2 (de) * | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
US7708372B2 (en) * | 1997-07-15 | 2010-05-04 | Silverbrook Research Pty Ltd | Inkjet nozzle with ink feed channels etched from back of wafer |
US6485123B2 (en) * | 1997-07-15 | 2002-11-26 | Silverbrook Research Pty Ltd | Shutter ink jet |
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DE10237787A1 (de) * | 2002-08-17 | 2004-03-04 | Robert Bosch Gmbh | Schichtsystem mit einer Siliziumschicht und einer Passivierschicht, Verfahren zur Erzeugung einer Passivierschicht auf einer Siliziumschicht und deren Verwendung |
DE102004036803A1 (de) * | 2004-07-29 | 2006-03-23 | Robert Bosch Gmbh | Verfahren zum Ätzen einer Schicht auf einem Substrat |
KR20070053060A (ko) * | 2005-11-19 | 2007-05-23 | 삼성전자주식회사 | 표시장치와 이의 제조방법 |
US20070128758A1 (en) * | 2005-12-01 | 2007-06-07 | Keisuke Tanaka | Semiconductor device and method for fabricating the same |
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2002
- 2002-07-30 DE DE10234589A patent/DE10234589A1/de not_active Ceased
-
2003
- 2003-05-06 KR KR1020057001619A patent/KR101035840B1/ko not_active IP Right Cessation
- 2003-05-06 EP EP03735274A patent/EP1527011B1/de not_active Expired - Lifetime
- 2003-05-06 US US10/520,886 patent/US7642545B2/en not_active Expired - Fee Related
- 2003-05-06 WO PCT/DE2003/001436 patent/WO2004016546A2/de active Application Filing
- 2003-05-06 DE DE50312526T patent/DE50312526D1/de not_active Expired - Lifetime
- 2003-05-06 JP JP2004528292A patent/JP4617158B2/ja not_active Expired - Fee Related
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US4576834A (en) * | 1985-05-20 | 1986-03-18 | Ncr Corporation | Method for forming trench isolation structures |
JPH05136105A (ja) * | 1991-04-12 | 1993-06-01 | Motorola Inc | 構造面を選択的にエツチングする方法 |
JPH05217961A (ja) * | 1992-02-07 | 1993-08-27 | Nippon Telegr & Teleph Corp <Ntt> | シリコンの精密加工方法 |
WO2000067307A1 (de) * | 1999-04-29 | 2000-11-09 | Robert Bosch Gmbh | Verfahren zum plasmaätzen von silizium |
JP2001305077A (ja) * | 2000-02-14 | 2001-10-31 | Leica Microsystems Lithography Gmbh | 半導体基板上の構造の検査方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011506119A (ja) * | 2007-12-21 | 2011-03-03 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | 微小電気機械システムの生産方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101035840B1 (ko) | 2011-05-20 |
EP1527011A2 (de) | 2005-05-04 |
WO2004016546A2 (de) | 2004-02-26 |
DE50312526D1 (de) | 2010-04-29 |
US7642545B2 (en) | 2010-01-05 |
DE10234589A1 (de) | 2004-02-12 |
EP1527011B1 (de) | 2010-03-17 |
WO2004016546A3 (de) | 2004-09-02 |
KR20050026048A (ko) | 2005-03-14 |
JP4617158B2 (ja) | 2011-01-19 |
US20060068510A1 (en) | 2006-03-30 |
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