JPS5127833A - Chitaniumunoshokukokuhoho - Google Patents

Chitaniumunoshokukokuhoho

Info

Publication number
JPS5127833A
JPS5127833A JP9997274A JP9997274A JPS5127833A JP S5127833 A JPS5127833 A JP S5127833A JP 9997274 A JP9997274 A JP 9997274A JP 9997274 A JP9997274 A JP 9997274A JP S5127833 A JPS5127833 A JP S5127833A
Authority
JP
Japan
Prior art keywords
unoshokukokuhoho
chitanium
chitanium unoshokukokuhoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9997274A
Other languages
English (en)
Other versions
JPS559060B2 (ja
Inventor
Yoshiaki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9997274A priority Critical patent/JPS5127833A/ja
Publication of JPS5127833A publication Critical patent/JPS5127833A/ja
Publication of JPS559060B2 publication Critical patent/JPS559060B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP9997274A 1974-09-02 1974-09-02 Chitaniumunoshokukokuhoho Granted JPS5127833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9997274A JPS5127833A (ja) 1974-09-02 1974-09-02 Chitaniumunoshokukokuhoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9997274A JPS5127833A (ja) 1974-09-02 1974-09-02 Chitaniumunoshokukokuhoho

Publications (2)

Publication Number Publication Date
JPS5127833A true JPS5127833A (ja) 1976-03-09
JPS559060B2 JPS559060B2 (ja) 1980-03-07

Family

ID=14261567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9997274A Granted JPS5127833A (ja) 1974-09-02 1974-09-02 Chitaniumunoshokukokuhoho

Country Status (1)

Country Link
JP (1) JPS5127833A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414166A (en) * 1977-07-05 1979-02-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
EP0002798A2 (de) * 1977-12-30 1979-07-11 International Business Machines Corporation Verfahren zum Entfernen einer Metallschicht von einem Halbleiterkörper durch reaktives Ionenätzen
US4203800A (en) * 1977-12-30 1980-05-20 International Business Machines Corporation Reactive ion etching process for metals
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
US4226666A (en) * 1978-08-21 1980-10-07 International Business Machines Corporation Etching method employing radiation and noble gas halide
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
JPS6022695A (ja) * 1983-07-19 1985-02-05 原子燃料工業株式会社 原子炉炉心の出力状態の監視法
JPS63259085A (ja) * 1986-11-26 1988-10-26 Tokyo Ohka Kogyo Co Ltd ドライエツチング方法
JP2005105416A (ja) * 2003-09-30 2005-04-21 Agere Systems Inc チタンベース材料の選択的等方性エッチングプロセス

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921340A (ja) * 1972-06-17 1974-02-25
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
JPS4975270A (ja) * 1972-11-22 1974-07-19

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
JPS4921340A (ja) * 1972-06-17 1974-02-25
JPS4975270A (ja) * 1972-11-22 1974-07-19

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414166A (en) * 1977-07-05 1979-02-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
EP0002798A2 (de) * 1977-12-30 1979-07-11 International Business Machines Corporation Verfahren zum Entfernen einer Metallschicht von einem Halbleiterkörper durch reaktives Ionenätzen
EP0002798A3 (en) * 1977-12-30 1979-07-25 International Business Machines Corporation Process for the removal of a metallic layer from a semiconductor body by reactive ion etching
US4203800A (en) * 1977-12-30 1980-05-20 International Business Machines Corporation Reactive ion etching process for metals
US4226666A (en) * 1978-08-21 1980-10-07 International Business Machines Corporation Etching method employing radiation and noble gas halide
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
JPS6022695A (ja) * 1983-07-19 1985-02-05 原子燃料工業株式会社 原子炉炉心の出力状態の監視法
JPS63259085A (ja) * 1986-11-26 1988-10-26 Tokyo Ohka Kogyo Co Ltd ドライエツチング方法
JP2005105416A (ja) * 2003-09-30 2005-04-21 Agere Systems Inc チタンベース材料の選択的等方性エッチングプロセス

Also Published As

Publication number Publication date
JPS559060B2 (ja) 1980-03-07

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