JPS5127833A - Chitaniumunoshokukokuhoho - Google Patents
ChitaniumunoshokukokuhohoInfo
- Publication number
- JPS5127833A JPS5127833A JP9997274A JP9997274A JPS5127833A JP S5127833 A JPS5127833 A JP S5127833A JP 9997274 A JP9997274 A JP 9997274A JP 9997274 A JP9997274 A JP 9997274A JP S5127833 A JPS5127833 A JP S5127833A
- Authority
- JP
- Japan
- Prior art keywords
- unoshokukokuhoho
- chitanium
- chitanium unoshokukokuhoho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9997274A JPS5127833A (ja) | 1974-09-02 | 1974-09-02 | Chitaniumunoshokukokuhoho |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9997274A JPS5127833A (ja) | 1974-09-02 | 1974-09-02 | Chitaniumunoshokukokuhoho |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5127833A true JPS5127833A (ja) | 1976-03-09 |
JPS559060B2 JPS559060B2 (ja) | 1980-03-07 |
Family
ID=14261567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9997274A Granted JPS5127833A (ja) | 1974-09-02 | 1974-09-02 | Chitaniumunoshokukokuhoho |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5127833A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414166A (en) * | 1977-07-05 | 1979-02-02 | Oki Electric Ind Co Ltd | Manufacture for semiconductor device |
EP0002798A2 (de) * | 1977-12-30 | 1979-07-11 | International Business Machines Corporation | Verfahren zum Entfernen einer Metallschicht von einem Halbleiterkörper durch reaktives Ionenätzen |
US4203800A (en) * | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Reactive ion etching process for metals |
US4213818A (en) * | 1979-01-04 | 1980-07-22 | Signetics Corporation | Selective plasma vapor etching process |
US4226666A (en) * | 1978-08-21 | 1980-10-07 | International Business Machines Corporation | Etching method employing radiation and noble gas halide |
US4330384A (en) * | 1978-10-27 | 1982-05-18 | Hitachi, Ltd. | Process for plasma etching |
JPS6022695A (ja) * | 1983-07-19 | 1985-02-05 | 原子燃料工業株式会社 | 原子炉炉心の出力状態の監視法 |
JPS63259085A (ja) * | 1986-11-26 | 1988-10-26 | Tokyo Ohka Kogyo Co Ltd | ドライエツチング方法 |
JP2005105416A (ja) * | 2003-09-30 | 2005-04-21 | Agere Systems Inc | チタンベース材料の選択的等方性エッチングプロセス |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4921340A (ja) * | 1972-06-17 | 1974-02-25 | ||
US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
JPS4975270A (ja) * | 1972-11-22 | 1974-07-19 |
-
1974
- 1974-09-02 JP JP9997274A patent/JPS5127833A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
JPS4921340A (ja) * | 1972-06-17 | 1974-02-25 | ||
JPS4975270A (ja) * | 1972-11-22 | 1974-07-19 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414166A (en) * | 1977-07-05 | 1979-02-02 | Oki Electric Ind Co Ltd | Manufacture for semiconductor device |
EP0002798A2 (de) * | 1977-12-30 | 1979-07-11 | International Business Machines Corporation | Verfahren zum Entfernen einer Metallschicht von einem Halbleiterkörper durch reaktives Ionenätzen |
EP0002798A3 (en) * | 1977-12-30 | 1979-07-25 | International Business Machines Corporation | Process for the removal of a metallic layer from a semiconductor body by reactive ion etching |
US4203800A (en) * | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Reactive ion etching process for metals |
US4226666A (en) * | 1978-08-21 | 1980-10-07 | International Business Machines Corporation | Etching method employing radiation and noble gas halide |
US4330384A (en) * | 1978-10-27 | 1982-05-18 | Hitachi, Ltd. | Process for plasma etching |
US4213818A (en) * | 1979-01-04 | 1980-07-22 | Signetics Corporation | Selective plasma vapor etching process |
JPS6022695A (ja) * | 1983-07-19 | 1985-02-05 | 原子燃料工業株式会社 | 原子炉炉心の出力状態の監視法 |
JPS63259085A (ja) * | 1986-11-26 | 1988-10-26 | Tokyo Ohka Kogyo Co Ltd | ドライエツチング方法 |
JP2005105416A (ja) * | 2003-09-30 | 2005-04-21 | Agere Systems Inc | チタンベース材料の選択的等方性エッチングプロセス |
Also Published As
Publication number | Publication date |
---|---|
JPS559060B2 (ja) | 1980-03-07 |
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