TW200518098A - Nonvolatile semiconductor storage device, and liquid crystal display device including the same - Google Patents

Nonvolatile semiconductor storage device, and liquid crystal display device including the same

Info

Publication number
TW200518098A
TW200518098A TW093125375A TW93125375A TW200518098A TW 200518098 A TW200518098 A TW 200518098A TW 093125375 A TW093125375 A TW 093125375A TW 93125375 A TW93125375 A TW 93125375A TW 200518098 A TW200518098 A TW 200518098A
Authority
TW
Taiwan
Prior art keywords
gate line
selection gate
memory cell
common
selection
Prior art date
Application number
TW093125375A
Other languages
English (en)
Other versions
TWI289853B (en
Inventor
Fujio Masuoka
Hiroshi Sakuraba
Fumiyoshi Matsuoka
Syounosuke Ueno
Ryusuke Matsuyama
Shinji Horii
Original Assignee
Fujio Masuoka
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujio Masuoka, Sharp Kk filed Critical Fujio Masuoka
Publication of TW200518098A publication Critical patent/TW200518098A/zh
Application granted granted Critical
Publication of TWI289853B publication Critical patent/TWI289853B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
TW093125375A 2003-08-26 2004-08-23 Nonvolatile semiconductor storage device, and liquid crystal display device including the same TWI289853B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003208875A JP4203372B2 (ja) 2003-08-26 2003-08-26 不揮発性半導体記憶装置及びそれを備えてなる液晶表示装置

Publications (2)

Publication Number Publication Date
TW200518098A true TW200518098A (en) 2005-06-01
TWI289853B TWI289853B (en) 2007-11-11

Family

ID=34209002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125375A TWI289853B (en) 2003-08-26 2004-08-23 Nonvolatile semiconductor storage device, and liquid crystal display device including the same

Country Status (4)

Country Link
US (1) US7088617B2 (zh)
JP (1) JP4203372B2 (zh)
KR (1) KR100625590B1 (zh)
TW (1) TWI289853B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110929645A (zh) * 2019-11-22 2020-03-27 北京集创北方科技股份有限公司 信号采集装置、采集方法、显示装置及电子设备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100697284B1 (ko) * 2005-05-02 2007-03-20 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
KR100787942B1 (ko) 2006-07-24 2007-12-24 삼성전자주식회사 선택 라인을 공유하는 엑스아이피 플래시 메모리 장치
KR101308014B1 (ko) * 2007-07-10 2013-09-12 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 리커버리 방법
KR100965066B1 (ko) * 2008-03-28 2010-06-21 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 블록 선택 회로
JP2009266944A (ja) 2008-04-23 2009-11-12 Toshiba Corp 三次元積層不揮発性半導体メモリ
KR101691092B1 (ko) 2010-08-26 2016-12-30 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
KR101658479B1 (ko) 2010-02-09 2016-09-21 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
KR101691088B1 (ko) 2010-02-17 2016-12-29 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
US9324440B2 (en) 2010-02-09 2016-04-26 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9378831B2 (en) 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US8908431B2 (en) * 2010-02-17 2014-12-09 Samsung Electronics Co., Ltd. Control method of nonvolatile memory device
JP5562995B2 (ja) * 2012-03-22 2014-07-30 株式会社東芝 半導体記憶装置
KR102242022B1 (ko) 2013-09-16 2021-04-21 삼성전자주식회사 불휘발성 메모리 및 그것의 프로그램 방법
WO2015162682A1 (ja) * 2014-04-22 2015-10-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP2022091503A (ja) * 2020-12-09 2022-06-21 キオクシア株式会社 半導体記憶装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
JP3544743B2 (ja) * 1995-04-17 2004-07-21 株式会社東芝 半導体記憶装置
KR0145225B1 (ko) * 1995-04-27 1998-08-17 김광호 블럭 단위로 스트레스 가능한 회로
KR100331563B1 (ko) * 1999-12-10 2002-04-06 윤종용 낸드형 플래쉬 메모리소자 및 그 구동방법
JP4226205B2 (ja) 2000-08-11 2009-02-18 富士雄 舛岡 半導体記憶装置の製造方法
JP4050555B2 (ja) * 2002-05-29 2008-02-20 株式会社東芝 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2005039016A (ja) * 2003-07-18 2005-02-10 Toshiba Corp 不揮発性半導体記憶装置、電子カード及び電子装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110929645A (zh) * 2019-11-22 2020-03-27 北京集创北方科技股份有限公司 信号采集装置、采集方法、显示装置及电子设备
CN110929645B (zh) * 2019-11-22 2023-07-28 北京集创北方科技股份有限公司 信号采集装置、采集方法、显示装置及电子设备

Also Published As

Publication number Publication date
KR20050022277A (ko) 2005-03-07
KR100625590B1 (ko) 2006-09-20
JP4203372B2 (ja) 2008-12-24
JP2005071411A (ja) 2005-03-17
US7088617B2 (en) 2006-08-08
US20050047209A1 (en) 2005-03-03
TWI289853B (en) 2007-11-11

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