TW200517634A - Reticle, exposure method, and the manufacturing method for reticle - Google Patents

Reticle, exposure method, and the manufacturing method for reticle

Info

Publication number
TW200517634A
TW200517634A TW093124257A TW93124257A TW200517634A TW 200517634 A TW200517634 A TW 200517634A TW 093124257 A TW093124257 A TW 093124257A TW 93124257 A TW93124257 A TW 93124257A TW 200517634 A TW200517634 A TW 200517634A
Authority
TW
Taiwan
Prior art keywords
reticle
mask substrate
inspection
pattern
openings
Prior art date
Application number
TW093124257A
Other languages
English (en)
Other versions
TWI241396B (en
Inventor
Takashi Sato
Takashi Sakamoto
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200517634A publication Critical patent/TW200517634A/zh
Application granted granted Critical
Publication of TWI241396B publication Critical patent/TWI241396B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B64—AIRCRAFT; AVIATION; COSMONAUTICS
    • B64D—EQUIPMENT FOR FITTING IN OR TO AIRCRAFT; FLIGHT SUITS; PARACHUTES; ARRANGEMENT OR MOUNTING OF POWER PLANTS OR PROPULSION TRANSMISSIONS IN AIRCRAFT
    • B64D47/00—Equipment not otherwise provided for
    • B64D47/08—Arrangements of cameras
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093124257A 2003-08-27 2004-08-12 Reticle, exposing method and manufacturing method of reticle TWI241396B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003303479A JP4015087B2 (ja) 2003-08-27 2003-08-27 レチクル、及び露光方法

Publications (2)

Publication Number Publication Date
TW200517634A true TW200517634A (en) 2005-06-01
TWI241396B TWI241396B (en) 2005-10-11

Family

ID=34407471

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124257A TWI241396B (en) 2003-08-27 2004-08-12 Reticle, exposing method and manufacturing method of reticle

Country Status (5)

Country Link
US (2) US7482102B2 (zh)
JP (1) JP4015087B2 (zh)
CN (1) CN1277152C (zh)
NL (1) NL1026914C2 (zh)
TW (1) TWI241396B (zh)

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JP2006039148A (ja) * 2004-07-26 2006-02-09 Toshiba Corp ホトマスク、それを用いたフォーカス測定方法および半導体装置の製造方法
US20060045383A1 (en) * 2004-08-31 2006-03-02 Picciotto Carl E Displacement estimation system and method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4450743B2 (ja) * 2005-02-08 2010-04-14 富士通マイクロエレクトロニクス株式会社 フォトマスク、フォトマスクの製造方法及び半導体装置の製造方法
KR101368601B1 (ko) * 2005-12-23 2014-02-27 칼 짜이스 에스엠테 게엠베하 결상 오차 결정부를 갖춘 광학 결상 장치
DE102005062618B4 (de) 2005-12-23 2008-05-08 Carl Zeiss Smt Ag Optische Abbildungseinrichtung und Abbildungsverfahren mit Bestimmung von Abbildungsfehlern
CN1794095A (zh) * 2006-01-06 2006-06-28 上海微电子装备有限公司 投影曝光装置中的同轴位置对准系统和对准方法
US8544191B2 (en) * 2007-04-10 2013-10-01 Reebok International Limited Smooth shoe uppers and methods for producing them
JP2009175587A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 露光装置検査用マスク、その製造方法、及び露光装置検査用マスクを用いた露光装置の検査方法
US8893061B2 (en) * 2009-01-30 2014-11-18 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
WO2011055758A1 (ja) * 2009-11-05 2011-05-12 株式会社ニコン フォーカステストマスク、フォーカス計測方法、露光装置、及び露光方法
JP5841797B2 (ja) * 2011-10-07 2016-01-13 株式会社日立ハイテクノロジーズ 回折格子の製造方法
US9766554B2 (en) * 2015-03-16 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for estimating focus and dose of an exposure process
CN107949807B (zh) 2015-05-15 2022-06-03 科磊股份有限公司 用于使用焦点敏感叠盖目标进行焦点确定的系统及方法
CN105137726A (zh) * 2015-10-19 2015-12-09 上海华力微电子有限公司 光刻工艺曝光焦距的监测方法
CN106816557A (zh) * 2017-03-02 2017-06-09 广州新视界光电科技有限公司 一种显示基板、显示基板的制作方法以及显示面板
CN114740572B (zh) * 2022-04-07 2024-04-12 中国科学院上海光学精密机械研究所 一种用于平板集成光学系统的宽带垂直耦合的多脊光栅耦合器

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JPH04181251A (ja) 1990-11-16 1992-06-29 Nikon Corp フォトマスク検査装置
US5300786A (en) 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JPH06302492A (ja) 1993-04-12 1994-10-28 Hitachi Ltd 露光条件検定パターンおよび露光原版ならびにそれらを用いた露光方法
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JP3906035B2 (ja) 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
US6606151B2 (en) * 2001-07-27 2003-08-12 Infineon Technologies Ag Grating patterns and method for determination of azimuthal and radial aberration
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US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6842237B2 (en) * 2001-12-28 2005-01-11 International Business Machines Corporation Phase shifted test pattern for monitoring focus and aberrations in optical projection systems
JP3727911B2 (ja) * 2002-09-25 2005-12-21 株式会社東芝 マスク、マスクの製造方法及び半導体装置の製造方法
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20090098473A1 (en) 2009-04-16
CN1590957A (zh) 2005-03-09
US7482102B2 (en) 2009-01-27
NL1026914A1 (nl) 2005-03-01
TWI241396B (en) 2005-10-11
US20050112475A1 (en) 2005-05-26
NL1026914C2 (nl) 2008-01-03
JP2005070672A (ja) 2005-03-17
CN1277152C (zh) 2006-09-27
JP4015087B2 (ja) 2007-11-28
US8068213B2 (en) 2011-11-29

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MM4A Annulment or lapse of patent due to non-payment of fees