TW200516134A - Novel slurry for chemical mechanical polishing of metals - Google Patents
Novel slurry for chemical mechanical polishing of metalsInfo
- Publication number
- TW200516134A TW200516134A TW093125607A TW93125607A TW200516134A TW 200516134 A TW200516134 A TW 200516134A TW 093125607 A TW093125607 A TW 093125607A TW 93125607 A TW93125607 A TW 93125607A TW 200516134 A TW200516134 A TW 200516134A
- Authority
- TW
- Taiwan
- Prior art keywords
- metals
- mechanical polishing
- chemical mechanical
- slurry
- novel slurry
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 2
- 239000002184 metal Substances 0.000 title abstract 2
- 150000002739 metals Chemical class 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title abstract 2
- 239000007853 buffer solution Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910000510 noble metal Inorganic materials 0.000 abstract 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/676,330 US20050070109A1 (en) | 2003-09-30 | 2003-09-30 | Novel slurry for chemical mechanical polishing of metals |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200516134A true TW200516134A (en) | 2005-05-16 |
TWI313294B TWI313294B (en) | 2009-08-11 |
Family
ID=34377361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093125607A TWI313294B (en) | 2003-09-30 | 2004-08-26 | Novel slurry for chemical mechanical polishing of metals |
Country Status (7)
Country | Link |
---|---|
US (3) | US20050070109A1 (zh) |
EP (1) | EP1673416A2 (zh) |
JP (1) | JP2007508692A (zh) |
KR (1) | KR101270417B1 (zh) |
CN (2) | CN1992179A (zh) |
TW (1) | TWI313294B (zh) |
WO (1) | WO2005033234A2 (zh) |
Families Citing this family (34)
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JP4635694B2 (ja) * | 2005-04-15 | 2011-02-23 | 日立化成工業株式会社 | 磁性金属膜と絶縁材料膜とを含む複合膜を研磨するための研磨材および研磨方法 |
US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
JP2007220759A (ja) * | 2006-02-14 | 2007-08-30 | Fujifilm Corp | 金属用研磨液及びそれを用いた化学的機械的研磨方法 |
JP2008034818A (ja) * | 2006-07-05 | 2008-02-14 | Hitachi Chem Co Ltd | 貴金属類膜研磨用研磨液及び貴金属類膜の研磨方法 |
US20100062601A1 (en) * | 2006-11-15 | 2010-03-11 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
US8541310B2 (en) * | 2007-05-04 | 2013-09-24 | Cabot Microelectronics Corporation | CMP compositions containing a soluble peroxometalate complex and methods of use thereof |
JP2009032807A (ja) * | 2007-07-25 | 2009-02-12 | Nec Corp | 半導体装置及びその製造方法 |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
US7875519B2 (en) * | 2008-05-21 | 2011-01-25 | Intel Corporation | Metal gate structure and method of manufacturing same |
JP5429169B2 (ja) * | 2008-08-06 | 2014-02-26 | 日立化成株式会社 | Cmp研磨液及びこのcmp研磨液を用いた基板の研磨方法 |
US20100081279A1 (en) * | 2008-09-30 | 2010-04-01 | Dupont Air Products Nanomaterials Llc | Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices |
US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
KR101380098B1 (ko) | 2009-07-16 | 2014-04-01 | 히타치가세이가부시끼가이샤 | 팔라듐 연마용 cmp 연마액 및 연마 방법 |
US8916473B2 (en) | 2009-12-14 | 2014-12-23 | Air Products And Chemicals, Inc. | Method for forming through-base wafer vias for fabrication of stacked devices |
CN102646580B (zh) * | 2011-02-18 | 2016-10-05 | 联华电子股份有限公司 | 应用于半导体元件工艺中的平坦化方法以及栅极构造 |
CA2839693A1 (en) | 2011-06-19 | 2012-12-27 | Abogen, Inc. | Devices, solutions and methods for sample collection |
US8610280B2 (en) * | 2011-09-16 | 2013-12-17 | Micron Technology, Inc. | Platinum-containing constructions, and methods of forming platinum-containing constructions |
CN102437110B (zh) * | 2011-11-30 | 2015-07-29 | 北京大学 | 一种石墨烯垂直互连结构的制作方法 |
TWI633624B (zh) | 2011-12-01 | 2018-08-21 | 應用材料股份有限公司 | 用於銅阻障層應用之摻雜的氮化鉭 |
US8748309B2 (en) * | 2012-09-14 | 2014-06-10 | GlobalFoundries, Inc. | Integrated circuits with improved gate uniformity and methods for fabricating same |
CN104810267B (zh) * | 2014-01-28 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极的形成方法 |
RU2016141811A (ru) | 2014-04-10 | 2018-05-10 | ДиЭнЭй ГЕНОТЕК ИНК. | Способ и система для лизиса микроорганизмов с применением периодатов |
CN105754490B (zh) * | 2016-05-05 | 2017-07-25 | 济南大学 | 一种用于红玛瑙抛光的抛光粉的制备方法 |
KR101943704B1 (ko) * | 2016-06-27 | 2019-01-29 | 삼성에스디아이 주식회사 | 금속막용 cmp 슬러리 조성물 및 연마 방법 |
CN107400889A (zh) * | 2017-07-26 | 2017-11-28 | 江苏盐城环保科技城重金属防治研究中心 | 一种模压纯金制品坯料的表面处理方法 |
JP6916306B2 (ja) * | 2018-01-12 | 2021-08-11 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
CN117198858A (zh) * | 2018-02-05 | 2023-12-08 | 富士胶片株式会社 | 药液、药液的制造方法、基板的处理方法 |
US11643599B2 (en) * | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
US10727076B2 (en) * | 2018-10-25 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Slurry and manufacturing semiconductor using the slurry |
US11289578B2 (en) | 2019-04-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etching to increase threshold voltage spread |
JP7278164B2 (ja) * | 2019-07-11 | 2023-05-19 | 東京エレクトロン株式会社 | ルテニウム膜の形成方法及び基板処理システム |
CN111180750B (zh) * | 2020-01-03 | 2022-08-12 | 西北工业大学 | 一种AgPdIr纳米合金及制备和使用方法 |
US11270911B2 (en) | 2020-05-06 | 2022-03-08 | Applied Materials Inc. | Doping of metal barrier layers |
Family Cites Families (25)
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US4315856A (en) * | 1980-02-04 | 1982-02-16 | E. I. Du Pont De Nemours And Company | Process for preparing 2,2-azobis(2,4-dimethylpentanenitrile) |
US5357130A (en) * | 1992-07-24 | 1994-10-18 | Hughes Aircraft Company | Low-noise cryogenic MOSFET |
US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US5874131A (en) * | 1996-10-02 | 1999-02-23 | Micron Technology, Inc. | CVD method for forming metal-containing films |
US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
US6693035B1 (en) * | 1998-10-20 | 2004-02-17 | Rodel Holdings, Inc. | Methods to control film removal rates for improved polishing in metal CMP |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
US6130123A (en) * | 1998-06-30 | 2000-10-10 | Intel Corporation | Method for making a complementary metal gate electrode technology |
US6077337A (en) * | 1998-12-01 | 2000-06-20 | Intel Corporation | Chemical-mechanical polishing slurry |
KR100428970B1 (ko) * | 1998-12-15 | 2004-06-16 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 소자의 제조방법 및 장치 |
US6291282B1 (en) * | 1999-02-26 | 2001-09-18 | Texas Instruments Incorporated | Method of forming dual metal gate structures or CMOS devices |
KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
GB2359558B (en) * | 2000-02-23 | 2002-01-23 | Fujimi America Inc | Polishing composition for a memory hard disk substrate |
US6332831B1 (en) * | 2000-04-06 | 2001-12-25 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
JP3851752B2 (ja) * | 2000-03-27 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
US6340344B1 (en) * | 2000-07-18 | 2002-01-22 | Evergreen Medical Incorporated | Endoscope with a removable suction tube |
US6787061B1 (en) * | 2000-11-16 | 2004-09-07 | Intel Corporation | Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
US6740591B1 (en) * | 2000-11-16 | 2004-05-25 | Intel Corporation | Slurry and method for chemical mechanical polishing of copper |
JP2002217288A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6913825B2 (en) * | 2001-09-20 | 2005-07-05 | University Of Notre Dame Du Lac | Process for making mesoporous silicate nanoparticle coatings and hollow mesoporous silica nano-shells |
KR100805843B1 (ko) * | 2001-12-28 | 2008-02-21 | 에이에스엠지니텍코리아 주식회사 | 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템 |
US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
US6639035B1 (en) * | 2002-05-28 | 2003-10-28 | Everlight Usa, Inc. | Polymer for chemical amplified photoresist compositions |
US7247554B2 (en) * | 2002-07-02 | 2007-07-24 | University Of North Texas | Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier |
-
2003
- 2003-09-30 US US10/676,330 patent/US20050070109A1/en not_active Abandoned
-
2004
- 2004-08-26 TW TW093125607A patent/TWI313294B/zh not_active IP Right Cessation
- 2004-09-29 CN CNA200610140069XA patent/CN1992179A/zh active Pending
- 2004-09-29 CN CNB2004100806349A patent/CN1318529C/zh not_active Expired - Fee Related
- 2004-09-30 JP JP2006534121A patent/JP2007508692A/ja active Pending
- 2004-09-30 EP EP04789413A patent/EP1673416A2/en not_active Withdrawn
- 2004-09-30 KR KR1020067006123A patent/KR101270417B1/ko not_active IP Right Cessation
- 2004-09-30 WO PCT/US2004/032262 patent/WO2005033234A2/en active Application Filing
-
2005
- 2005-12-12 US US11/301,836 patent/US20060097347A1/en not_active Abandoned
- 2005-12-12 US US11/301,826 patent/US20060099817A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20060089219A (ko) | 2006-08-08 |
US20060099817A1 (en) | 2006-05-11 |
EP1673416A2 (en) | 2006-06-28 |
KR101270417B1 (ko) | 2013-06-07 |
US20050070109A1 (en) | 2005-03-31 |
TWI313294B (en) | 2009-08-11 |
CN1318529C (zh) | 2007-05-30 |
CN1618909A (zh) | 2005-05-25 |
CN1992179A (zh) | 2007-07-04 |
US20060097347A1 (en) | 2006-05-11 |
WO2005033234A3 (en) | 2006-01-26 |
JP2007508692A (ja) | 2007-04-05 |
WO2005033234A2 (en) | 2005-04-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |