US4178403A
(en)
*
|
1977-08-04 |
1979-12-11 |
Konishiroku Photo Industry Co., Ltd. |
Mask blank and mask
|
JPS5764739A
(en)
*
|
1980-10-09 |
1982-04-20 |
Dainippon Printing Co Ltd |
Photomask substrate and photomask
|
JPS61272746A
(ja)
*
|
1985-05-28 |
1986-12-03 |
Asahi Glass Co Ltd |
フオトマスクブランクおよびフオトマスク
|
JPH0239153A
(ja)
|
1988-07-29 |
1990-02-08 |
Toppan Printing Co Ltd |
フォトマスクブランク及びフォトマスク
|
US5578402A
(en)
*
|
1990-06-21 |
1996-11-26 |
Matsushita Electronics Corporation |
Photomask used by photolithography and a process of producing same
|
JP3036085B2
(ja)
*
|
1990-12-28 |
2000-04-24 |
富士通株式会社 |
光学マスクとその欠陥修正方法
|
US5439763A
(en)
*
|
1991-03-19 |
1995-08-08 |
Hitachi, Ltd. |
Optical mask and method of correcting the same
|
US5460908A
(en)
*
|
1991-08-02 |
1995-10-24 |
Micron Technology, Inc. |
Phase shifting retical fabrication method
|
KR0131192B1
(en)
*
|
1992-04-22 |
1998-04-14 |
Toshiba Corp |
Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
|
AU5681194A
(en)
*
|
1993-01-21 |
1994-08-15 |
Sematech, Inc. |
Phase shifting mask structure with multilayer optical coating for improved transmission
|
JP3253783B2
(ja)
|
1993-08-13 |
2002-02-04 |
株式会社東芝 |
ハーフトーン型位相シフトマスクとその製造方法
|
JP3453435B2
(ja)
*
|
1993-10-08 |
2003-10-06 |
大日本印刷株式会社 |
位相シフトマスクおよびその製造方法
|
KR0138297B1
(ko)
*
|
1994-02-07 |
1998-06-01 |
김광호 |
포토 마스크 및 그 제조 방법
|
US5451543A
(en)
*
|
1994-04-25 |
1995-09-19 |
Motorola, Inc. |
Straight sidewall profile contact opening to underlying interconnect and method for making the same
|
JPH0876353A
(ja)
|
1994-09-08 |
1996-03-22 |
Nec Corp |
位相シフトマスクの製造方法
|
US5477058A
(en)
*
|
1994-11-09 |
1995-12-19 |
Kabushiki Kaisha Toshiba |
Attenuated phase-shifting mask with opaque reticle alignment marks
|
US5965936A
(en)
*
|
1997-12-31 |
1999-10-12 |
Micron Technology, Inc. |
Multi-layer lead frame for a semiconductor device
|
US5693568A
(en)
*
|
1995-12-14 |
1997-12-02 |
Advanced Micro Devices, Inc. |
Reverse damascene via structures
|
US5935733A
(en)
*
|
1996-04-05 |
1999-08-10 |
Intel Corporation |
Photolithography mask and method of fabrication
|
US5756396A
(en)
*
|
1996-05-06 |
1998-05-26 |
Taiwan Semiconductor Manufacturing Company Ltd |
Method of making a multi-layer wiring structure having conductive sidewall etch stoppers and a stacked plug interconnect
|
US5955222A
(en)
*
|
1996-12-03 |
1999-09-21 |
International Business Machines Corporation |
Method of making a rim-type phase-shift mask and mask manufactured thereby
|
US5851704A
(en)
*
|
1996-12-09 |
1998-12-22 |
Micron Technology, Inc. |
Method and apparatus for the fabrication of semiconductor photomask
|
US6165649A
(en)
*
|
1997-01-21 |
2000-12-26 |
International Business Machines Corporation |
Methods for repair of photomasks
|
US6120942A
(en)
*
|
1997-02-18 |
2000-09-19 |
Micron Technology, Inc. |
Method for making a photomask with multiple absorption levels
|
US5981110A
(en)
*
|
1998-02-17 |
1999-11-09 |
International Business Machines Corporation |
Method for repairing photomasks
|
US5939227A
(en)
*
|
1998-03-09 |
1999-08-17 |
Rochester Institute Of Technology |
Multi-layered attenuated phase shift mask and a method for making the mask
|
TW388004B
(en)
*
|
1998-04-03 |
2000-04-21 |
United Microelectronics Corp |
Alternating phase shift mask
|
US6355557B2
(en)
*
|
1998-07-22 |
2002-03-12 |
Applied Materials, Inc. |
Oxide plasma etching process with a controlled wineglass shape
|
US6174771B1
(en)
*
|
1998-11-17 |
2001-01-16 |
Winbond Electronics Corp. |
Split gate flash memory cell with self-aligned process
|
US6515343B1
(en)
|
1998-11-19 |
2003-02-04 |
Quicklogic Corporation |
Metal-to-metal antifuse with non-conductive diffusion barrier
|
US6200906B1
(en)
*
|
1998-12-17 |
2001-03-13 |
Micron Technology, Inc. |
Stepped photoresist profile and opening formed using the profile
|
US6562522B1
(en)
*
|
1999-10-29 |
2003-05-13 |
Intel Corporation |
Photomasking
|
JP2001174973A
(ja)
|
1999-12-15 |
2001-06-29 |
Dainippon Printing Co Ltd |
ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
|
US6541367B1
(en)
*
|
2000-01-18 |
2003-04-01 |
Applied Materials, Inc. |
Very low dielectric constant plasma-enhanced CVD films
|
US20010051420A1
(en)
*
|
2000-01-19 |
2001-12-13 |
Besser Paul R. |
Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch
|
US6582856B1
(en)
*
|
2000-02-28 |
2003-06-24 |
Chartered Semiconductor Manufacturing Ltd. |
Simplified method of fabricating a rim phase shift mask
|
US6451703B1
(en)
*
|
2000-03-10 |
2002-09-17 |
Applied Materials, Inc. |
Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
|
JP2001308181A
(ja)
*
|
2000-04-27 |
2001-11-02 |
Nec Corp |
半導体装置とその製造方法
|
US6335130B1
(en)
*
|
2000-05-01 |
2002-01-01 |
Asml Masktools Netherlands B.V. |
System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
|
US6368967B1
(en)
*
|
2000-05-04 |
2002-04-09 |
Advanced Micro Devices, Inc. |
Method to control mechanical stress of copper interconnect line using post-plating copper anneal
|
US6627359B2
(en)
|
2000-05-17 |
2003-09-30 |
Dai Nippon Printing Co., Ltd. |
Phase-shift photomask manufacturing method and phase-shift photomask
|
US6261963B1
(en)
*
|
2000-07-07 |
2001-07-17 |
Advanced Micro Devices, Inc. |
Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices
|
JP5371162B2
(ja)
*
|
2000-10-13 |
2013-12-18 |
三星電子株式会社 |
反射型フォトマスク
|
AU2002236520A1
(en)
*
|
2000-12-01 |
2002-06-11 |
Unaxis Usa Inc. |
Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
|
US6459155B1
(en)
*
|
2000-12-05 |
2002-10-01 |
Advanced Micro Devices, Inc. |
Damascene processing employing low Si-SiON etch stop layer/arc
|
JP2002258458A
(ja)
*
|
2000-12-26 |
2002-09-11 |
Hoya Corp |
ハーフトーン型位相シフトマスク及びマスクブランク
|
US6780548B1
(en)
*
|
2001-01-11 |
2004-08-24 |
Dupont Photomasks, Inc. |
Alternating aperture phase shifting photomask with improved transmission balancing
|
US6429033B1
(en)
*
|
2001-02-20 |
2002-08-06 |
Nayna Networks, Inc. |
Process for manufacturing mirror devices using semiconductor technology
|
US20020160520A1
(en)
*
|
2001-03-16 |
2002-10-31 |
Phoenix Bioscience |
Silicon nano-collection analytic device
|
US20020192944A1
(en)
*
|
2001-06-13 |
2002-12-19 |
Sonderman Thomas J. |
Method and apparatus for controlling a thickness of a copper film
|
US6610594B2
(en)
*
|
2001-07-10 |
2003-08-26 |
Advanced Micro Devices, Inc. |
Locally increasing sidewall density by ion implantation
|
US6803160B2
(en)
*
|
2001-12-13 |
2004-10-12 |
Dupont Photomasks, Inc. |
Multi-tone photomask and method for manufacturing the same
|
US6768827B2
(en)
*
|
2002-01-16 |
2004-07-27 |
The Regents Of The University Of California |
Integrated optical router
|
US6703252B2
(en)
*
|
2002-01-31 |
2004-03-09 |
Hewlett-Packard Development Company, L.P. |
Method of manufacturing an emitter
|
US6730445B2
(en)
*
|
2002-04-12 |
2004-05-04 |
International Business Machines Corporation |
Attenuated embedded phase shift photomask blanks
|
US20030228047A1
(en)
*
|
2002-06-07 |
2003-12-11 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photomask transparent substrate protection during removal of opaque photomask defects
|
JP2005529362A
(ja)
*
|
2002-06-10 |
2005-09-29 |
トッパン、フォウタマスクス、インク |
フォトマスクおよび欠陥の修復方法
|
US7001641B2
(en)
*
|
2002-09-23 |
2006-02-21 |
Intel Corporation |
Seed layer treatment
|
US7332752B2
(en)
*
|
2002-10-25 |
2008-02-19 |
The University Of Connecticut |
Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal
|
US7022436B2
(en)
*
|
2003-01-14 |
2006-04-04 |
Asml Netherlands B.V. |
Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects
|