ATE368240T1 - Phasenschiebermaske für die euv-lithographie mit glatter oberfläche (damascene-struktur) - Google Patents

Phasenschiebermaske für die euv-lithographie mit glatter oberfläche (damascene-struktur)

Info

Publication number
ATE368240T1
ATE368240T1 AT02752674T AT02752674T ATE368240T1 AT E368240 T1 ATE368240 T1 AT E368240T1 AT 02752674 T AT02752674 T AT 02752674T AT 02752674 T AT02752674 T AT 02752674T AT E368240 T1 ATE368240 T1 AT E368240T1
Authority
AT
Austria
Prior art keywords
phase shifter
smooth surface
euv lithography
damascene structure
substrate
Prior art date
Application number
AT02752674T
Other languages
English (en)
Inventor
Pei-Yang Yan
Fu-Chang Lo
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE368240T1 publication Critical patent/ATE368240T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT02752674T 2001-08-24 2002-08-01 Phasenschiebermaske für die euv-lithographie mit glatter oberfläche (damascene-struktur) ATE368240T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/938,625 US6607862B2 (en) 2001-08-24 2001-08-24 Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making

Publications (1)

Publication Number Publication Date
ATE368240T1 true ATE368240T1 (de) 2007-08-15

Family

ID=25471694

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02752674T ATE368240T1 (de) 2001-08-24 2002-08-01 Phasenschiebermaske für die euv-lithographie mit glatter oberfläche (damascene-struktur)

Country Status (7)

Country Link
US (1) US6607862B2 (de)
EP (1) EP1421443B1 (de)
CN (1) CN100474105C (de)
AT (1) ATE368240T1 (de)
DE (1) DE60221404T2 (de)
TW (1) TW559886B (de)
WO (1) WO2003019291A2 (de)

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JP4212025B2 (ja) * 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
DE10259331B4 (de) * 2002-12-18 2005-02-10 Infineon Technologies Ag Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske
US6998202B2 (en) * 2003-07-31 2006-02-14 Intel Corporation Multilayer reflective extreme ultraviolet lithography mask blanks
US6986974B2 (en) * 2003-10-16 2006-01-17 Freescale Semiconductor, Inc. Attenuated phase shift mask for extreme ultraviolet lithography and method therefore
CN100352001C (zh) * 2003-12-30 2007-11-28 旺宏电子股份有限公司 应用于微影制程的结构及半导体元件的制造方法
JP2005321564A (ja) * 2004-05-07 2005-11-17 Canon Inc 多層膜が形成された光学素子の製造方法
US7198872B2 (en) * 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
DE102004031079B4 (de) * 2004-06-22 2008-11-13 Qimonda Ag Verfahren zur Herstellung einer Reflexionsmaske
SG124407A1 (en) * 2005-02-03 2006-08-30 Asml Netherlands Bv Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus
KR100604938B1 (ko) * 2005-05-27 2006-07-28 삼성전자주식회사 극자외선 노광용 반사마스크 및 그 제조방법
JP4703353B2 (ja) * 2005-10-14 2011-06-15 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP4703354B2 (ja) * 2005-10-14 2011-06-15 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
EP1857876A1 (de) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG Methode zur Herstellung einer Phasenschiebermaske
JP4372178B2 (ja) * 2007-04-27 2009-11-25 株式会社東芝 光反射型マスクと光反射型マスクの作製方法及び半導体装置の製造方法
US20080280539A1 (en) * 2007-05-11 2008-11-13 Asml Holding N.V. Optical component fabrication using amorphous oxide coated substrates
US20080318066A1 (en) * 2007-05-11 2008-12-25 Asml Holding N.V. Optical Component Fabrication Using Coated Substrates
US8110321B2 (en) * 2007-05-16 2012-02-07 International Business Machines Corporation Method of manufacture of damascene reticle
WO2011068223A1 (ja) 2009-12-04 2011-06-09 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材およびｅｕｖリソグラフィ用反射層付基板の製造方法
KR20130007533A (ko) 2009-12-09 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 광학 부재
CN102687071B (zh) 2009-12-09 2013-12-11 旭硝子株式会社 带反射层的euv光刻用衬底、euv光刻用反射型掩模坯料、euv光刻用反射型掩模、和该带反射层的衬底的制造方法
JP5750951B2 (ja) 2011-03-14 2015-07-22 富士通株式会社 エッチングする方法及びエッチング装置
US8795931B2 (en) * 2012-01-30 2014-08-05 SK Hynix Inc. Reflection-type photomasks and methods of fabricating the same
US9310675B2 (en) 2013-03-15 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
DE102013108872B4 (de) * 2013-03-15 2018-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Fotomasken für extrem ultraviolettes Licht (EUV) sowie Herstellungsverfahren dieser
US9091947B2 (en) * 2013-07-19 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
US9341940B2 (en) * 2014-05-15 2016-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Reticle and method of fabricating the same
KR102246876B1 (ko) 2014-10-22 2021-04-30 삼성전자 주식회사 극자외선 리소그래피 장치용 반사형 마스크 및 그 제조방법
US9709884B2 (en) 2014-11-26 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and manufacturing method by using the same
KR102520797B1 (ko) 2015-10-15 2023-04-12 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법
CN106169416B (zh) * 2016-08-29 2019-11-12 复旦大学 一种极紫外掩模的制造方法
TWI712849B (zh) * 2017-02-17 2020-12-11 聯華電子股份有限公司 一種極紫外線光罩
US20190056651A1 (en) * 2017-08-21 2019-02-21 Globalfoundries Inc. Euv patterning using photomask substrate topography
EP3486721A1 (de) 2017-11-17 2019-05-22 IMEC vzw Maske für extrem-uv-lithographie und verfahren zur deren herstellung
US11429027B2 (en) * 2018-08-17 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photolithography method and apparatus
WO2020076431A1 (en) * 2018-10-11 2020-04-16 Applied Materials, Inc. Photomask cleaning
SG11202103911SA (en) * 2018-10-17 2021-05-28 Astrileux Corp Photomask having reflective layer with non-reflective regions
JP7447812B2 (ja) * 2019-01-21 2024-03-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法
CN113267956A (zh) * 2020-05-29 2021-08-17 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
DE102020210553A1 (de) * 2020-08-20 2022-03-24 Carl Zeiss Smt Gmbh Reflektierendes optisches Element, Beleuchtungsoptik, Projektionsbelichtungsanlage und Verfahren zum Bilden einer Schutzschicht
US20230032950A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof

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JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JPH11305417A (ja) 1998-04-24 1999-11-05 Hitachi Ltd 露光方法および反射型マスク
JP2004509871A (ja) 2000-09-20 2004-04-02 シェーリング　コーポレイション 二重ヒスタミンｈ１およびｈ３のアゴニストまたはアンタゴニストとしての置換イミダゾール
US6656643B2 (en) * 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering

Also Published As

Publication number Publication date
DE60221404T2 (de) 2008-04-17
EP1421443A2 (de) 2004-05-26
DE60221404D1 (de) 2007-09-06
CN100474105C (zh) 2009-04-01
US6607862B2 (en) 2003-08-19
WO2003019291A2 (en) 2003-03-06
US20030039894A1 (en) 2003-02-27
CN1516827A (zh) 2004-07-28
EP1421443B1 (de) 2007-07-25
TW559886B (en) 2003-11-01
WO2003019291A3 (en) 2003-04-10

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