DK1288721T3 - Fotolitografi med substrat med flere niveauer - Google Patents

Fotolitografi med substrat med flere niveauer

Info

Publication number
DK1288721T3
DK1288721T3 DK02102074T DK02102074T DK1288721T3 DK 1288721 T3 DK1288721 T3 DK 1288721T3 DK 02102074 T DK02102074 T DK 02102074T DK 02102074 T DK02102074 T DK 02102074T DK 1288721 T3 DK1288721 T3 DK 1288721T3
Authority
DK
Denmark
Prior art keywords
region
pattern area
expose
pattern
multilayer substrate
Prior art date
Application number
DK02102074T
Other languages
English (en)
Inventor
Brian Martin
John Perring
John Shannon
Original Assignee
X Fab Semiconductor Foundries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries filed Critical X Fab Semiconductor Foundries
Application granted granted Critical
Publication of DK1288721T3 publication Critical patent/DK1288721T3/da

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
DK02102074T 2001-09-01 2002-07-30 Fotolitografi med substrat med flere niveauer DK1288721T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0121217A GB2379284A (en) 2001-09-01 2001-09-01 Multiple level photolithography

Publications (1)

Publication Number Publication Date
DK1288721T3 true DK1288721T3 (da) 2007-06-04

Family

ID=9921363

Family Applications (1)

Application Number Title Priority Date Filing Date
DK02102074T DK1288721T3 (da) 2001-09-01 2002-07-30 Fotolitografi med substrat med flere niveauer

Country Status (6)

Country Link
US (2) US6949330B2 (da)
EP (1) EP1288721B1 (da)
AT (1) ATE353450T1 (da)
DE (1) DE60218002T2 (da)
DK (1) DK1288721T3 (da)
GB (1) GB2379284A (da)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2379284A (en) * 2001-09-01 2003-03-05 Zarlink Semiconductor Ltd Multiple level photolithography
US20050130075A1 (en) * 2003-12-12 2005-06-16 Mohammed Shaarawi Method for making fluid emitter orifice
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7915171B2 (en) * 2008-04-29 2011-03-29 Intel Corporation Double patterning techniques and structures
US8057964B2 (en) * 2008-10-31 2011-11-15 Altera Corporation Photolithographic reticles with electrostatic discharge protection structures
CN111162007B (zh) * 2018-11-08 2022-04-12 中芯国际集成电路制造(上海)有限公司 半导体器件及其制造方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1222215A (en) 1967-07-10 1971-02-10 Lucas Industries Ltd Measurement of the water content of an oil bath
US3494129A (en) 1968-03-06 1970-02-10 Gen Electric Fluid compressors and turbofan engines employing same
CH534687A (de) 1968-07-05 1973-03-15 Cassella Farbwerke Mainkur Ag Verfahren zur Herstellung von Derivaten des 2-Oxo-1,2-dihydro-chinolins
GB1262468A (en) 1968-11-09 1972-02-02 Bibby Chemicals Ltd Improvements in or relating to fluid mixing devices
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4690728A (en) * 1986-10-23 1987-09-01 Intel Corporation Pattern delineation of vertical load resistor
US4829024A (en) * 1988-09-02 1989-05-09 Motorola, Inc. Method of forming layered polysilicon filled contact by doping sensitive endpoint etching
DE3882148T2 (de) 1988-12-24 1994-02-03 Alcatel Nv Vermittlungskommunikationssystem.
JPH02280439A (ja) 1989-04-20 1990-11-16 Fujitsu Ltd 先き入れ先だしメモリを用いた時分割方式よりパケット方式へのデータ変換回路
US5251564A (en) * 1990-04-26 1993-10-12 Rim Julius J Combustion box exhaust filtration system and method
CA2047982C (en) 1990-07-27 1997-01-28 Hiroshi Yamashita Atm cell format conversion system
KR930008139B1 (en) * 1990-08-30 1993-08-26 Samsung Electronics Co Ltd Method for preparation of pattern
GB2270820A (en) 1992-09-16 1994-03-23 Plessey Telecomm STM/ATM network interfacing
US5310457A (en) * 1992-09-30 1994-05-10 At&T Bell Laboratories Method of integrated circuit fabrication including selective etching of silicon and silicon compounds
KR950008384B1 (ko) * 1992-12-10 1995-07-28 삼성전자주식회사 패턴의 형성방법
US5347514A (en) 1993-03-26 1994-09-13 International Business Machines Corporation Processor-based smart packet memory interface
GB9306367D0 (en) * 1993-03-26 1993-05-19 Plessey Telecomm Statistical gain using atm signalling
WO1994024610A1 (en) * 1993-04-13 1994-10-27 Astarix, Inc. High resolution mask programmable via selected by low resolution photomasking
GB9419611D0 (en) 1994-09-29 1994-11-16 Plessey Telecomm Constant bit rate synchronisation
JP3245333B2 (ja) 1995-08-11 2002-01-15 富士通株式会社 Ｃｂｒ信号の位相跳躍防止方式
US5612956A (en) * 1995-12-15 1997-03-18 General Instrument Corporation Of Delaware Reformatting of variable rate data for fixed rate communication
US6043206A (en) * 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
JPH10209039A (ja) * 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP2000021749A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法および露光装置
TW378280B (en) * 1998-07-22 2000-01-01 United Integrated Circuits Corp Compatible mask
JP2000147743A (ja) * 1998-11-13 2000-05-26 Nec Corp 半導体製造用のレチクルとこれを用いた半導体装置の製造方法
US6251564B1 (en) * 1999-05-17 2001-06-26 United Microelectronics Corp. Method for forming a pattern with both logic-type and memory-type circuit
US6238850B1 (en) * 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
JP2001183806A (ja) * 1999-12-24 2001-07-06 Nec Corp 露光方法および位相シフトマスク
US6671258B1 (en) 2000-02-01 2003-12-30 Alcatel Canada Inc. Dynamic buffering system having integrated random early detection
US6566019B2 (en) * 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6544695B2 (en) * 2001-04-11 2003-04-08 Winbond Electronics Corp. Photomask set for photolithographic operation
US20030022112A1 (en) * 2001-07-27 2003-01-30 Juliana Arifin Structuring method
GB2379284A (en) * 2001-09-01 2003-03-05 Zarlink Semiconductor Ltd Multiple level photolithography
US7425391B2 (en) * 2001-10-02 2008-09-16 Guobiao Zhang Highly-corrected mask
JP3998458B2 (ja) * 2001-11-08 2007-10-24 富士通株式会社 波長に依存しないリソグラフィ用の露光パターン生成方法及び露光パターン生成装置
US7014956B2 (en) * 2002-01-04 2006-03-21 Intel Corporation Active secondary exposure mask to manufacture integrated circuits
US6777143B2 (en) * 2002-01-28 2004-08-17 Taiwan Semiconductor Manufacturing Company Multiple mask step and scan aligner
US6924083B2 (en) * 2002-10-18 2005-08-02 Tai-Saw Technology Co., Ltd. Mask layout and exposing method for reducing diffraction effects by using a single mask in the process of semiconductor production
JP3884371B2 (ja) * 2002-11-26 2007-02-21 株式会社東芝 レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
ATE353450T1 (de) 2007-02-15
EP1288721B1 (en) 2007-02-07
DE60218002T2 (de) 2007-11-15
US20060050255A1 (en) 2006-03-09
US20030044734A1 (en) 2003-03-06
DE60218002D1 (de) 2007-03-22
US7349070B2 (en) 2008-03-25
GB0121217D0 (en) 2001-10-24
EP1288721A2 (en) 2003-03-05
GB2379284A (en) 2003-03-05
EP1288721A3 (en) 2003-09-17
US6949330B2 (en) 2005-09-27

Similar Documents

Publication Publication Date Title
JP2002122976A5 (da)
KR980003827A (ko) 복수레벨 레지스트 프로파일을 형성하기 위한 다중 노광 마스킹 시스템
WO2003102696A3 (en) A method for photolithography using multiple illuminations and a single fine feature mask
DE60221404D1 (de) Phasenschiebermaske für die euv-lithographie mit glatter oberfläche (damascene-struktur)
WO2005062128A3 (en) Immersion lithographic process using a conforming immersion medium
EP1589377A3 (en) Patterning process and resist overcoat material
SE0104238D0 (sv) Method and apparatus for patterning a workpiece
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
EP0810475A3 (en) Pattern exposing method using phase shift and mask used therefor
TW200500791A (en) Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
TW200616101A (en) Method for manufacturing semiconductor device
EP1286218A3 (en) Lithographic patterning using a high transmission attenuated phase-shift mask and multiple exposures of optimised coherence
TWI266959B (en) Device manufacturing method, device manufactured thereby and a mask for use in the method
TW200512545A (en) Method for forming a photoresist pattern using an anti-optical proximity effect
DK1288721T3 (da) Fotolitografi med substrat med flere niveauer
JP2001092105A5 (da)
TW200619829A (en) Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases
TW362237B (en) Method for fabricating phase shift mask by controlling an exposure dose
EP1291722A3 (en) Method of recording identifier and set of photomasks
EP1526406A4 (en) PHOTOGRAPHIC MASK
CN102117012A (zh) 一种提高光刻工艺中焦深的方法
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
WO2002001293A3 (en) Photomask and method for increasing image aspect ratio while relaxing mask fabrication requirements
JP3430290B2 (ja) 半導体装置の製造方法
GB2375403B (en) Optical proximity correction