TW200510565A - Thin film deposition apparatus and thin film deposition method - Google Patents
Thin film deposition apparatus and thin film deposition methodInfo
- Publication number
- TW200510565A TW200510565A TW093115057A TW93115057A TW200510565A TW 200510565 A TW200510565 A TW 200510565A TW 093115057 A TW093115057 A TW 093115057A TW 93115057 A TW93115057 A TW 93115057A TW 200510565 A TW200510565 A TW 200510565A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film deposition
- vacuum vessel
- deposition method
- deposition apparatus
- Prior art date
Links
- 238000007736 thin film deposition technique Methods 0.000 title 1
- 238000000427 thin-film deposition Methods 0.000 title 1
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/006951 WO2004108979A1 (ja) | 2003-06-02 | 2003-06-02 | 薄膜形成装置及び薄膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200510565A true TW200510565A (en) | 2005-03-16 |
TWI318242B TWI318242B (en) | 2009-12-11 |
Family
ID=33495899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093115057A TWI318242B (en) | 2003-06-02 | 2004-05-27 | Thin film deposition apparatus and thin film deposition method |
Country Status (8)
Country | Link |
---|---|
US (2) | US20060124455A1 (zh) |
EP (2) | EP1637624B1 (zh) |
JP (2) | JP3839038B2 (zh) |
KR (1) | KR100926867B1 (zh) |
CN (2) | CN100513632C (zh) |
HK (2) | HK1088046A1 (zh) |
TW (1) | TWI318242B (zh) |
WO (2) | WO2004108979A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8604696B2 (en) | 2008-12-23 | 2013-12-10 | Industrial Technology Research Institute | Plasma excitation module |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004108979A1 (ja) * | 2003-06-02 | 2004-12-16 | Shincron Co., Ltd. | 薄膜形成装置及び薄膜形成方法 |
CN100359040C (zh) * | 2006-01-06 | 2008-01-02 | 浙江大学 | 贴片电感骨架的筒体型镀膜装置 |
CN100359041C (zh) * | 2006-01-20 | 2008-01-02 | 浙江大学 | 电子陶瓷连续式溅射镀膜设备 |
JP4725848B2 (ja) * | 2006-02-06 | 2011-07-13 | 鹿島建設株式会社 | 固化体の強度測定方法及び装置 |
US20090056877A1 (en) | 2007-08-31 | 2009-03-05 | Tokyo Electron Limited | Plasma processing apparatus |
JPWO2009081761A1 (ja) * | 2007-12-20 | 2011-05-06 | 株式会社アルバック | プラズマソース機構及び成膜装置 |
JP5374980B2 (ja) * | 2008-09-10 | 2013-12-25 | ソニー株式会社 | 固体撮像装置 |
JP5099101B2 (ja) * | 2009-01-23 | 2012-12-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPWO2012035603A1 (ja) | 2010-09-13 | 2014-01-20 | 株式会社シンクロン | 磁場発生装置、マグネトロンカソード及びスパッタ装置 |
JP2013182966A (ja) * | 2012-03-01 | 2013-09-12 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
EP2913422B1 (en) * | 2012-10-23 | 2020-04-01 | Shincron Co., Ltd. | Thin film formation apparatus and method of forming thin film |
JP6163064B2 (ja) * | 2013-09-18 | 2017-07-12 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP6546927B2 (ja) * | 2014-01-15 | 2019-07-17 | ガリウム エンタープライジズ ピーティーワイ リミテッド | 膜内の不純物を低減するための装置および方法 |
WO2017077106A1 (de) | 2015-11-05 | 2017-05-11 | Bühler Alzenau Gmbh | Vorrichtung und verfahren zur vakuumbeschichtung |
KR200481146Y1 (ko) | 2016-02-01 | 2016-08-19 | 홍기철 | 대걸레 세척기 |
TW201827633A (zh) * | 2016-09-27 | 2018-08-01 | 美商康寧公司 | 用於減少電弧之濺射的裝置及方法 |
CN110318028A (zh) * | 2018-03-28 | 2019-10-11 | 株式会社新柯隆 | 等离子体源机构及薄膜形成装置 |
KR20210149894A (ko) * | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 듀얼 주파수, 직접 구동 유도 결합 플라즈마 소스 |
WO2021153697A1 (ja) * | 2020-01-28 | 2021-08-05 | 京セラ株式会社 | 平面コイルおよびこれを備える半導体製造装置 |
CN113337809A (zh) * | 2020-02-14 | 2021-09-03 | 株式会社新柯隆 | 薄膜形成装置 |
JP7112768B2 (ja) * | 2020-12-23 | 2022-08-04 | 株式会社クリエイティブコーティングス | 金属膜のald装置 |
WO2023172227A2 (en) * | 2022-03-09 | 2023-09-14 | Atilim Universitesi | A boron nitride coating method with inductively coupled plasma |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US5421891A (en) * | 1989-06-13 | 1995-06-06 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
JPH05185247A (ja) * | 1992-01-13 | 1993-07-27 | Furukawa Electric Co Ltd:The | 抵抗溶接電極用材料 |
GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
TW296534B (zh) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
JPH0831358A (ja) * | 1994-07-12 | 1996-02-02 | Nissin Electric Co Ltd | Ecrイオンラジカル源 |
JP2770753B2 (ja) * | 1994-09-16 | 1998-07-02 | 日本電気株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP3122601B2 (ja) * | 1995-06-15 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ成膜方法及びその装置 |
JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
JPH09245997A (ja) * | 1996-03-05 | 1997-09-19 | Nissin Electric Co Ltd | カバーで覆われた内壁とアンテナを持つプラズマ室 |
KR100469134B1 (ko) * | 1996-03-18 | 2005-09-02 | 비오이 하이디스 테크놀로지 주식회사 | 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터 |
JP2845199B2 (ja) * | 1996-06-14 | 1999-01-13 | 日本電気株式会社 | ドライエッチング装置およびドライエッチング方法 |
JP2929275B2 (ja) * | 1996-10-16 | 1999-08-03 | 株式会社アドテック | 透磁コアを有する誘導結合型−平面状プラズマの発生装置 |
JP3077623B2 (ja) * | 1997-04-02 | 2000-08-14 | 日本電気株式会社 | プラズマ化学気相成長装置 |
JP3730754B2 (ja) | 1997-07-04 | 2006-01-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH11209875A (ja) * | 1998-01-23 | 1999-08-03 | Shin Etsu Chem Co Ltd | カーボン製反応炉および熱分解窒化ホウ素成形体の製造方法 |
JPH11219937A (ja) * | 1998-01-30 | 1999-08-10 | Toshiba Corp | プロセス装置 |
US6254738B1 (en) * | 1998-03-31 | 2001-07-03 | Applied Materials, Inc. | Use of variable impedance having rotating core to control coil sputter distribution |
US6164241A (en) * | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
JP2000017457A (ja) * | 1998-07-03 | 2000-01-18 | Shincron:Kk | 薄膜形成装置および薄膜形成方法 |
JP2000124137A (ja) * | 1998-10-13 | 2000-04-28 | Hitachi Ltd | プラズマ処理装置 |
JP2000208298A (ja) * | 1999-01-14 | 2000-07-28 | Kokusai Electric Co Ltd | 誘導結合型プラズマ生成装置 |
US6229264B1 (en) * | 1999-03-31 | 2001-05-08 | Lam Research Corporation | Plasma processor with coil having variable rf coupling |
KR100416308B1 (ko) * | 1999-05-26 | 2004-01-31 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 |
US6528752B1 (en) * | 1999-06-18 | 2003-03-04 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
KR100338057B1 (ko) * | 1999-08-26 | 2002-05-24 | 황 철 주 | 유도 결합형 플라즈마 발생용 안테나 장치 |
US6664881B1 (en) * | 1999-11-30 | 2003-12-16 | Ameritherm, Inc. | Efficient, low leakage inductance, multi-tap, RF transformer and method of making same |
KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
JP3774353B2 (ja) * | 2000-02-25 | 2006-05-10 | 株式会社シンクロン | 金属化合物薄膜の形成方法およびその形成装置 |
JP4790896B2 (ja) * | 2000-05-26 | 2011-10-12 | エーユー オプトロニクス コーポレイション | トップゲート型tftを含むアクティブマトリックスデバイスの製造方法および製造装置 |
JP4093704B2 (ja) * | 2000-06-14 | 2008-06-04 | 松下電器産業株式会社 | プラズマ処理装置 |
JP3650025B2 (ja) * | 2000-12-04 | 2005-05-18 | シャープ株式会社 | プラズマプロセス装置 |
JP3888077B2 (ja) * | 2001-04-20 | 2007-02-28 | 株式会社日立製作所 | 金属接合用電極及びその製造方法、並びに金属接合用電極を備えた溶接設備及びそれにより溶接された製品 |
US6783629B2 (en) * | 2002-03-11 | 2004-08-31 | Yuri Glukhoy | Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment |
US7097782B2 (en) * | 2002-11-12 | 2006-08-29 | Micron Technology, Inc. | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly |
WO2004108979A1 (ja) * | 2003-06-02 | 2004-12-16 | Shincron Co., Ltd. | 薄膜形成装置及び薄膜形成方法 |
-
2003
- 2003-06-02 WO PCT/JP2003/006951 patent/WO2004108979A1/ja active Application Filing
- 2003-06-02 EP EP03733231A patent/EP1637624B1/en not_active Expired - Lifetime
- 2003-06-02 CN CNB038265753A patent/CN100513632C/zh not_active Expired - Lifetime
- 2003-06-02 JP JP2005500523A patent/JP3839038B2/ja not_active Expired - Fee Related
- 2003-06-02 US US10/559,326 patent/US20060124455A1/en not_active Abandoned
-
2004
- 2004-05-27 TW TW093115057A patent/TWI318242B/zh active
- 2004-05-31 KR KR1020057023033A patent/KR100926867B1/ko active IP Right Grant
- 2004-05-31 US US10/558,777 patent/US20060266291A1/en not_active Abandoned
- 2004-05-31 WO PCT/JP2004/007483 patent/WO2004108980A1/ja active Application Filing
- 2004-05-31 JP JP2005506749A patent/JP3874787B2/ja not_active Expired - Lifetime
- 2004-05-31 EP EP04745448.3A patent/EP1640474B1/en not_active Expired - Lifetime
- 2004-05-31 CN CN2004800144036A patent/CN1795287B/zh not_active Expired - Fee Related
-
2006
- 2006-07-25 HK HK06108238.9A patent/HK1088046A1/xx not_active IP Right Cessation
- 2006-08-01 HK HK06108542.0A patent/HK1088365A1/xx not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8604696B2 (en) | 2008-12-23 | 2013-12-10 | Industrial Technology Research Institute | Plasma excitation module |
TWI498053B (zh) * | 2008-12-23 | 2015-08-21 | Ind Tech Res Inst | 電漿激發模組 |
Also Published As
Publication number | Publication date |
---|---|
EP1637624A4 (en) | 2007-12-26 |
CN100513632C (zh) | 2009-07-15 |
JP3874787B2 (ja) | 2007-01-31 |
EP1640474B1 (en) | 2013-08-28 |
EP1637624B1 (en) | 2012-05-30 |
JP3839038B2 (ja) | 2006-11-01 |
JPWO2004108979A1 (ja) | 2006-07-20 |
TWI318242B (en) | 2009-12-11 |
WO2004108980A1 (ja) | 2004-12-16 |
KR20060023982A (ko) | 2006-03-15 |
US20060124455A1 (en) | 2006-06-15 |
CN1795287B (zh) | 2012-07-04 |
WO2004108979A1 (ja) | 2004-12-16 |
HK1088365A1 (en) | 2006-11-03 |
HK1088046A1 (en) | 2006-10-27 |
CN1795287A (zh) | 2006-06-28 |
EP1640474A4 (en) | 2011-06-22 |
US20060266291A1 (en) | 2006-11-30 |
EP1640474A1 (en) | 2006-03-29 |
JPWO2004108980A1 (ja) | 2006-07-20 |
CN1788104A (zh) | 2006-06-14 |
KR100926867B1 (ko) | 2009-11-16 |
EP1637624A1 (en) | 2006-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200510565A (en) | Thin film deposition apparatus and thin film deposition method | |
GB9616225D0 (en) | Method of surface treatment of semiconductor substrates | |
EP1473379A3 (en) | Metal film production apparatus and method | |
WO2004007353A3 (en) | Continuous chemical vapor deposition process and process furnace | |
WO2003035927A3 (en) | Gas delivery apparatus for atomic layer deposition | |
EP0936284A3 (en) | Method and apparatus for producing thin films | |
TW469534B (en) | Plasma processing method and apparatus | |
EP1346085A4 (en) | METHOD AND DEVICE FOR PRODUCING MN-BASED MATERIALS | |
TW200600605A (en) | Liquid precursors for the CVD deposition of amorphous carbon films | |
WO2003023825A3 (en) | Substrate processing apparatus | |
PE47195A1 (es) | Recipientes huecos con superficie interna inerte o impermeable obtenida mediante reaccion de la superficie facilitada por plasma o polimerizacion sobre la superficie | |
TW200607883A (en) | Susceptor for vapor deposition apparatus | |
TW200520043A (en) | Deposition of silicon-containing films from hexachlorodisilane | |
ATE322561T1 (de) | Vorrichtung für cvd-beschichtungen | |
CA2269862A1 (en) | Apparatus and process for controlled atmosphere chemical vapor deposition | |
EP0849811A3 (en) | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device | |
CY1108484T1 (el) | Μεθοδος για την αποθεση πυριτιου | |
TW200746265A (en) | Methods and apparatus for epitaxial film formation | |
AU3340497A (en) | Pumping device by non-vaporisable getter and method for using this getter | |
RU98119152A (ru) | Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления | |
EP1229574A3 (en) | Silicon-based film, formation method therefor and photovoltaic element | |
MY122888A (en) | Carbon doped oxide deposition | |
EP1164206A3 (en) | Chemical vapor deposition method for amorphous silicon and resulting film | |
TW334481B (en) | Method of depositing thin films by means of plasma enhanced chemical vapor deposition | |
TW363087B (en) | CVD-Ti film forming method |