TW200509557A - Mixer circuit - Google Patents
Mixer circuitInfo
- Publication number
- TW200509557A TW200509557A TW093116772A TW93116772A TW200509557A TW 200509557 A TW200509557 A TW 200509557A TW 093116772 A TW093116772 A TW 093116772A TW 93116772 A TW93116772 A TW 93116772A TW 200509557 A TW200509557 A TW 200509557A
- Authority
- TW
- Taiwan
- Prior art keywords
- channel
- semiconductor substrate
- channel mos
- crystal faces
- insulation film
- Prior art date
Links
- 239000013078 crystal Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0047—Offset of DC voltage or frequency
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003168529A JP2005006127A (ja) | 2003-06-12 | 2003-06-12 | ミキサ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200509557A true TW200509557A (en) | 2005-03-01 |
TWI242332B TWI242332B (en) | 2005-10-21 |
Family
ID=33549335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093116772A TWI242332B (en) | 2003-06-12 | 2004-06-11 | Mixer circuit |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070142017A1 (zh) |
EP (1) | EP1633000A1 (zh) |
JP (1) | JP2005006127A (zh) |
KR (1) | KR20060017644A (zh) |
CN (1) | CN1806333A (zh) |
TW (1) | TWI242332B (zh) |
WO (1) | WO2004112140A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4723797B2 (ja) * | 2003-06-13 | 2011-07-13 | 財団法人国際科学振興財団 | Cmosトランジスタ |
EP2302787B1 (en) * | 2009-09-23 | 2012-09-05 | Nxp B.V. | Frequency conversion |
US10048300B2 (en) * | 2014-04-25 | 2018-08-14 | Qualcomm Technologies, Inc. | Detector circuit |
CN109244072B (zh) * | 2018-09-03 | 2021-05-18 | 芯恩(青岛)集成电路有限公司 | 半导体器件结构及其制作方法 |
CN109639241B (zh) * | 2018-11-13 | 2021-03-26 | 天津大学 | 一种无电感下变频混频器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4156283A (en) * | 1972-05-30 | 1979-05-22 | Tektronix, Inc. | Multiplier circuit |
WO1994006213A1 (en) * | 1992-09-02 | 1994-03-17 | Motorola, Inc. | Radio receiver |
US5893030A (en) * | 1994-05-25 | 1999-04-06 | Oki Telecom | Dual-function double balanced mixer circuit |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH1155096A (ja) * | 1997-08-01 | 1999-02-26 | Fujitsu Ltd | 半導体集積回路と伝送ゲートのホットキャリア劣化抑止方法 |
US6028850A (en) * | 1998-07-10 | 2000-02-22 | Hyundai Electronics America, Inc. | Wireless transceiver and frequency plan |
JP3822993B2 (ja) * | 1999-02-08 | 2006-09-20 | 株式会社ルネサステクノロジ | 集積化ミキサ回路 |
JP2001244416A (ja) * | 2000-02-29 | 2001-09-07 | Hitachi Ltd | 信号処理用半導体集積回路 |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
US20020011612A1 (en) * | 2000-07-31 | 2002-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
-
2003
- 2003-06-12 JP JP2003168529A patent/JP2005006127A/ja active Pending
-
2004
- 2004-06-11 EP EP04745809A patent/EP1633000A1/en not_active Withdrawn
- 2004-06-11 KR KR1020057023894A patent/KR20060017644A/ko not_active Application Discontinuation
- 2004-06-11 US US10/560,398 patent/US20070142017A1/en not_active Abandoned
- 2004-06-11 CN CNA2004800163145A patent/CN1806333A/zh active Pending
- 2004-06-11 TW TW093116772A patent/TWI242332B/zh active
- 2004-06-11 WO PCT/JP2004/008215 patent/WO2004112140A1/ja not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
TWI242332B (en) | 2005-10-21 |
EP1633000A1 (en) | 2006-03-08 |
WO2004112140A1 (ja) | 2004-12-23 |
US20070142017A1 (en) | 2007-06-21 |
JP2005006127A (ja) | 2005-01-06 |
KR20060017644A (ko) | 2006-02-24 |
CN1806333A (zh) | 2006-07-19 |
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