TW200507185A - Structure of static random access memory and method of making the same - Google Patents
Structure of static random access memory and method of making the sameInfo
- Publication number
- TW200507185A TW200507185A TW093102676A TW93102676A TW200507185A TW 200507185 A TW200507185 A TW 200507185A TW 093102676 A TW093102676 A TW 093102676A TW 93102676 A TW93102676 A TW 93102676A TW 200507185 A TW200507185 A TW 200507185A
- Authority
- TW
- Taiwan
- Prior art keywords
- sram
- same
- random access
- making
- access memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000003068 static effect Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/637,322 US6924560B2 (en) | 2003-08-08 | 2003-08-08 | Compact SRAM cell with FinFET |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200507185A true TW200507185A (en) | 2005-02-16 |
TWI260071B TWI260071B (en) | 2006-08-11 |
Family
ID=34116591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093102676A TWI260071B (en) | 2003-08-08 | 2004-02-05 | Structure of static random access memory and method of making the same |
Country Status (2)
Country | Link |
---|---|
US (1) | US6924560B2 (zh) |
TW (1) | TWI260071B (zh) |
Cited By (4)
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CN104103579A (zh) * | 2013-04-04 | 2014-10-15 | 意法半导体公司 | 集成电路器件和制作技术 |
CN106486156A (zh) * | 2016-09-21 | 2017-03-08 | 宁波大学 | 一种基于FinFET器件的存储单元 |
TWI608593B (zh) * | 2012-01-13 | 2017-12-11 | 泰拉創新股份有限公司 | 半導體裝置的元件電路 |
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WO2005036651A1 (ja) * | 2003-10-09 | 2005-04-21 | Nec Corporation | 半導体装置及びその製造方法 |
US7023056B2 (en) * | 2003-11-26 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell structure |
US7830703B2 (en) * | 2004-06-04 | 2010-11-09 | Nec Corporation | Semiconductor device and manufacturing method thereof |
US7084461B2 (en) * | 2004-06-11 | 2006-08-01 | International Business Machines Corporation | Back gate FinFET SRAM |
US7161827B2 (en) * | 2005-01-12 | 2007-01-09 | Freescale Semiconductor, Inc. | SRAM having improved cell stability and method therefor |
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JPWO2007063990A1 (ja) * | 2005-12-02 | 2009-05-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US7512017B2 (en) * | 2005-12-21 | 2009-03-31 | Intel Corporation | Integration of planar and tri-gate devices on the same substrate |
US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
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US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
US7908578B2 (en) | 2007-08-02 | 2011-03-15 | Tela Innovations, Inc. | Methods for designing semiconductor device with dynamic array section |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US9009641B2 (en) * | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
JP2007287728A (ja) * | 2006-04-12 | 2007-11-01 | Elpida Memory Inc | 半導体装置 |
US7592675B2 (en) * | 2006-10-02 | 2009-09-22 | Taiwan Semiconductor Manufacutring Company, Ltd. | Partial FinFET memory cell |
JP5057739B2 (ja) * | 2006-10-03 | 2012-10-24 | 株式会社東芝 | 半導体記憶装置 |
US7655989B2 (en) * | 2006-11-30 | 2010-02-02 | International Business Machines Corporation | Triple gate and double gate finFETs with different vertical dimension fins |
US7838948B2 (en) | 2007-01-30 | 2010-11-23 | Infineon Technologies Ag | Fin interconnects for multigate FET circuit blocks |
US7709893B2 (en) * | 2007-01-31 | 2010-05-04 | Infineon Technologies Ag | Circuit layout for different performance and method |
US7812373B2 (en) * | 2007-02-12 | 2010-10-12 | Infineon Technologies Ag | MuGFET array layout |
US20080211568A1 (en) * | 2007-03-01 | 2008-09-04 | Infineon Technologies Ag | MuGFET POWER SWITCH |
US20080212392A1 (en) * | 2007-03-02 | 2008-09-04 | Infineon Technologies | Multiple port mugfet sram |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
JP2008218881A (ja) * | 2007-03-07 | 2008-09-18 | Nec Electronics Corp | 半導体装置 |
US20080239859A1 (en) * | 2007-03-30 | 2008-10-02 | Infineon Technologies Ag | Access device |
US8286114B2 (en) * | 2007-04-18 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-dimensional device design layout |
US8237201B2 (en) * | 2007-05-30 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout methods of integrated circuits having unit MOS devices |
US7710765B2 (en) * | 2007-09-27 | 2010-05-04 | Micron Technology, Inc. | Back gated SRAM cell |
US7915691B2 (en) * | 2007-10-30 | 2011-03-29 | International Business Machines Corporation | High density SRAM cell with hybrid devices |
JP4466732B2 (ja) * | 2007-12-11 | 2010-05-26 | ソニー株式会社 | 半導体記憶装置 |
US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
US7902000B2 (en) * | 2008-06-04 | 2011-03-08 | International Business Machines Corporation | MugFET with stub source and drain regions |
KR101903975B1 (ko) | 2008-07-16 | 2018-10-04 | 텔라 이노베이션스, 인코포레이티드 | 동적 어레이 아키텍쳐에서의 셀 페이징과 배치를 위한 방법 및 그 구현 |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
US7829951B2 (en) * | 2008-11-06 | 2010-11-09 | Qualcomm Incorporated | Method of fabricating a fin field effect transistor (FinFET) device |
US8258577B2 (en) * | 2009-06-04 | 2012-09-04 | International Business Machines Corporation | CMOS inverter device with fin structures |
TWI499039B (zh) * | 2009-09-18 | 2015-09-01 | Taiwan Semiconductor Mfg Co Ltd | 靜態隨機存取記憶體位元單元與內容定址記憶體位元單元的裝置 |
US8202768B2 (en) | 2009-10-07 | 2012-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a semiconductor device |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
US8659072B2 (en) * | 2010-09-24 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Series FinFET implementation schemes |
JP5588298B2 (ja) * | 2010-10-14 | 2014-09-10 | 株式会社東芝 | 半導体装置 |
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US8693235B2 (en) | 2011-12-06 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for finFET SRAM arrays in integrated circuits |
US9041115B2 (en) | 2012-05-03 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure for FinFETs |
US9634013B2 (en) * | 2014-10-16 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for semiconductor fabrication |
CN105719688B (zh) * | 2014-12-04 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | Sram存储器和形成sram存储器的方法 |
US10032782B2 (en) * | 2016-03-02 | 2018-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Static random access memory and manufacturing method thereof |
US9728635B1 (en) | 2016-10-13 | 2017-08-08 | International Business Machines Corporation | Uniform gate length in vertical field effect transistors |
US10559573B2 (en) * | 2017-09-22 | 2020-02-11 | United Microelectronics Corp. | Static random access memory structure |
CN109545252B (zh) * | 2017-09-22 | 2021-10-08 | 联华电子股份有限公司 | 静态随机存取存储器的布局图案 |
US10297290B1 (en) | 2017-12-29 | 2019-05-21 | Micron Technology, Inc. | Semiconductor devices, and related control logic assemblies, control logic devices, electronic systems, and methods |
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US10340267B1 (en) | 2017-12-29 | 2019-07-02 | Micron Technology, Inc. | Semiconductor devices including control logic levels, and related memory devices, control logic assemblies, electronic systems, and methods |
US10586795B1 (en) | 2018-04-30 | 2020-03-10 | Micron Technology, Inc. | Semiconductor devices, and related memory devices and electronic systems |
US11527539B2 (en) * | 2020-05-29 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Four-poly-pitch SRAM cell with backside metal tracks |
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2003
- 2003-08-08 US US10/637,322 patent/US6924560B2/en not_active Expired - Lifetime
-
2004
- 2004-02-05 TW TW093102676A patent/TWI260071B/zh not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103151071A (zh) * | 2011-12-06 | 2013-06-12 | 台湾积体电路制造股份有限公司 | 用于finfet单元的方法和装置 |
CN103151071B (zh) * | 2011-12-06 | 2016-01-27 | 台湾积体电路制造股份有限公司 | 用于finfet单元的方法和装置 |
TWI608593B (zh) * | 2012-01-13 | 2017-12-11 | 泰拉創新股份有限公司 | 半導體裝置的元件電路 |
CN104103579A (zh) * | 2013-04-04 | 2014-10-15 | 意法半导体公司 | 集成电路器件和制作技术 |
CN104103579B (zh) * | 2013-04-04 | 2018-02-02 | 意法半导体公司 | 集成电路器件和制作技术 |
US11705458B2 (en) | 2013-04-04 | 2023-07-18 | Stmicroelectronics, Inc. | Integrated circuit devices and fabrication techniques |
CN106486156A (zh) * | 2016-09-21 | 2017-03-08 | 宁波大学 | 一种基于FinFET器件的存储单元 |
CN106486156B (zh) * | 2016-09-21 | 2019-02-05 | 宁波大学 | 一种基于FinFET器件的存储单元 |
Also Published As
Publication number | Publication date |
---|---|
US20050029556A1 (en) | 2005-02-10 |
TWI260071B (en) | 2006-08-11 |
US6924560B2 (en) | 2005-08-02 |
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