TW200505235A - Amplification-type solid-state image pickup device incorporating plurality of arrayed pixels with amplification function - Google Patents

Amplification-type solid-state image pickup device incorporating plurality of arrayed pixels with amplification function

Info

Publication number
TW200505235A
TW200505235A TW093119604A TW93119604A TW200505235A TW 200505235 A TW200505235 A TW 200505235A TW 093119604 A TW093119604 A TW 093119604A TW 93119604 A TW93119604 A TW 93119604A TW 200505235 A TW200505235 A TW 200505235A
Authority
TW
Taiwan
Prior art keywords
reset
amplification
period
pickup device
image pickup
Prior art date
Application number
TW093119604A
Other languages
English (en)
Other versions
TWI244863B (en
Inventor
Takashi Watanabe
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003190171A external-priority patent/JP4229770B2/ja
Priority claimed from JP2003357652A external-priority patent/JP2005123950A/ja
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200505235A publication Critical patent/TW200505235A/zh
Application granted granted Critical
Publication of TWI244863B publication Critical patent/TWI244863B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW093119604A 2003-07-02 2004-06-30 Amplification-type solid-state image pickup device incorporating plurality of arrayed pixels with amplification function TWI244863B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003190171A JP4229770B2 (ja) 2003-07-02 2003-07-02 増幅型固体撮像装置
JP2003357652A JP2005123950A (ja) 2003-10-17 2003-10-17 増幅型固体撮像装置

Publications (2)

Publication Number Publication Date
TW200505235A true TW200505235A (en) 2005-02-01
TWI244863B TWI244863B (en) 2005-12-01

Family

ID=33554503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119604A TWI244863B (en) 2003-07-02 2004-06-30 Amplification-type solid-state image pickup device incorporating plurality of arrayed pixels with amplification function

Country Status (3)

Country Link
US (1) US7012238B2 (zh)
KR (1) KR100610581B1 (zh)
TW (1) TWI244863B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4185771B2 (ja) * 2002-12-27 2008-11-26 シャープ株式会社 固体撮像装置
JP2006042121A (ja) * 2004-07-29 2006-02-09 Sharp Corp 増幅型固体撮像装置
KR101230200B1 (ko) * 2005-03-29 2013-02-05 코니카 미놀타 포토 이미징 가부시끼가이샤 촬상 장치
JP4828914B2 (ja) * 2005-10-28 2011-11-30 株式会社東芝 固体撮像装置およびその駆動方法
JP4614286B2 (ja) * 2006-06-12 2011-01-19 セイコーインスツル株式会社 光電変換装置、イメージセンサ、光学読み取り装置
US8546859B2 (en) * 2006-08-18 2013-10-01 Teledyne Dalsa B.V. Semiconductor device with a CMOS image sensor and method of manufacturing such a device
US20120320182A1 (en) * 2011-06-17 2012-12-20 Richard Hubbard Electro optical image-magnifying device
CN110233980B (zh) * 2019-06-27 2021-11-02 Oppo广东移动通信有限公司 一种有源像素图像传感器及图像处理方法、存储介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6519371B1 (en) * 1999-09-30 2003-02-11 California Institute Of Technology High-speed on-chip windowed centroiding using photodiode-based CMOS imager
JP3856283B2 (ja) * 2000-02-14 2006-12-13 シャープ株式会社 固体撮像装置および撮像装置の駆動方法
JP3921093B2 (ja) * 2002-01-29 2007-05-30 シャープ株式会社 増幅型固体撮像装置
US7489354B2 (en) * 2003-01-08 2009-02-10 Cypress Semiconductor Corporation CMOS active pixel with hard and soft reset
US7408577B2 (en) * 2003-04-09 2008-08-05 Micron Technology, Inc. Biasing scheme for large format CMOS active pixel sensors

Also Published As

Publication number Publication date
KR100610581B1 (ko) 2006-08-10
TWI244863B (en) 2005-12-01
KR20050004093A (ko) 2005-01-12
US7012238B2 (en) 2006-03-14
US20050001148A1 (en) 2005-01-06

Similar Documents

Publication Publication Date Title
TW200627941A (en) Solid state imaging device
CN101998066B (zh) 固体摄像装置、其驱动方法以及电子设备
JP4581814B2 (ja) 固体撮像装置、固体撮像装置の駆動方法および撮像装置
JP4185771B2 (ja) 固体撮像装置
JP5219724B2 (ja) 固体撮像装置
JP5307826B2 (ja) デュアル感度を有する撮像素子回路及び撮像素子アレー
US8294798B2 (en) Solid-state imaging apparatus
WO2006104641A3 (en) Minimized directly converted x-ray effects on imagers
EP1072151A1 (en) Low-noise active pixel sensor for imaging arrays with global reset
KR20090051410A (ko) 이미지 센서의 구동 방법
US9312296B2 (en) Solid-state imaging device and method for manufacturing solid-state imaging device
TW200505235A (en) Amplification-type solid-state image pickup device incorporating plurality of arrayed pixels with amplification function
Karim et al. Readout circuit in active pixel sensors in amorphous silicon technology
EP1505655A3 (en) Solid state image pickup device and camera using the solid state image pickup device
US20090213253A1 (en) Solid-state imaging apparatus
WO2007066762A8 (ja) 固体撮像装置
JP4761491B2 (ja) 固体撮像装置及びそれを用いた撮像システム
JP4242258B2 (ja) 固体撮像素子
JP4253908B2 (ja) 固体撮像素子およびその駆動方法、並びに固体撮像素子の信号処理方法
JP2014060658A (ja) 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
JP5267497B2 (ja) 固体撮像装置
JP4238377B2 (ja) 固体撮像素子およびその駆動方法
JP6254883B2 (ja) 撮像装置
Wang et al. Characterization of the buried channel n-MOST source followers in CMOS image sensors
JP2007150807A (ja) 固体撮像装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees