TW200501363A - Semiconductor die package with increased thermal conduction - Google Patents

Semiconductor die package with increased thermal conduction

Info

Publication number
TW200501363A
TW200501363A TW093110854A TW93110854A TW200501363A TW 200501363 A TW200501363 A TW 200501363A TW 093110854 A TW093110854 A TW 093110854A TW 93110854 A TW93110854 A TW 93110854A TW 200501363 A TW200501363 A TW 200501363A
Authority
TW
Taiwan
Prior art keywords
substrate
metal cap
semiconductor die
thermal conduction
die package
Prior art date
Application number
TW093110854A
Other languages
English (en)
Other versions
TWI239615B (en
Inventor
Sandra L Petty-Weeks
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of TW200501363A publication Critical patent/TW200501363A/zh
Application granted granted Critical
Publication of TWI239615B publication Critical patent/TWI239615B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
TW093110854A 2003-05-15 2004-04-19 Semiconductor die package with increased thermal conduction TWI239615B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/438,968 US6787896B1 (en) 2003-05-15 2003-05-15 Semiconductor die package with increased thermal conduction

Publications (2)

Publication Number Publication Date
TW200501363A true TW200501363A (en) 2005-01-01
TWI239615B TWI239615B (en) 2005-09-11

Family

ID=32927436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110854A TWI239615B (en) 2003-05-15 2004-04-19 Semiconductor die package with increased thermal conduction

Country Status (6)

Country Link
US (1) US6787896B1 (zh)
JP (1) JP4570610B2 (zh)
KR (1) KR100778209B1 (zh)
CN (1) CN1791976A (zh)
TW (1) TWI239615B (zh)
WO (1) WO2004105127A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387061B (zh) * 2005-11-15 2013-02-21 Intel Corp 半導體封裝體抗震增強技術

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US7224059B2 (en) * 2003-10-21 2007-05-29 Intel Corporation Method and apparatus for thermo-electric cooling
US7250327B2 (en) * 2004-06-30 2007-07-31 Intel Corporation Silicon die substrate manufacturing process and silicon die substrate with integrated cooling mechanism
JP2006024755A (ja) * 2004-07-08 2006-01-26 Fujitsu Ltd 回路基板
US20060044765A1 (en) * 2004-09-01 2006-03-02 Infowize Technologies Corporation Heat dissipation device
US20060186535A1 (en) * 2005-02-23 2006-08-24 Visteon Global Technologies, Inc. Semi-conductor die mount assembly
DE102005013762C5 (de) * 2005-03-22 2012-12-20 Sew-Eurodrive Gmbh & Co. Kg Elektronisches Gerät und Verfahren zur Bestimmung der Temperatur eines Leistungshalbleiters
US20080140801A1 (en) * 2006-10-05 2008-06-12 Holt John M Multiple computer system with dual mode redundancy architecture
US8021931B2 (en) * 2006-12-11 2011-09-20 Stats Chippac, Inc. Direct via wire bonding and method of assembling the same
US7561430B2 (en) * 2007-04-30 2009-07-14 Watlow Electric Manufacturing Company Heat management system for a power switching device
US8112884B2 (en) * 2007-10-08 2012-02-14 Honeywell International Inc. Method for providing an efficient thermal transfer through a printed circuit board
FR2972850B1 (fr) * 2011-03-17 2013-11-15 Valeo Sys Controle Moteur Sas Circuit électronique a double couche isolante et son procédé de fabrication
JP5788854B2 (ja) * 2012-11-15 2015-10-07 シライ電子工業株式会社 回路基板
US9123780B2 (en) * 2012-12-19 2015-09-01 Invensas Corporation Method and structures for heat dissipating interposers
US9585240B2 (en) * 2013-10-24 2017-02-28 Qorvo Us, Inc. Advanced grounding scheme
JP6026391B2 (ja) * 2013-11-28 2016-11-16 京セラドキュメントソリューションズ株式会社 過電流防止装置
US9536808B1 (en) 2015-06-16 2017-01-03 Macronix International Co., Ltd. Photo pattern method to increase via etching rate
JP6900947B2 (ja) * 2018-12-28 2021-07-14 株式会社村田製作所 高周波モジュールおよび通信装置
US11758697B2 (en) * 2019-09-26 2023-09-12 Ohio State Innovation Foundation Low inductance power module with vertical power loop structure and insulated baseplates
CN111863626B (zh) * 2020-06-28 2021-12-07 珠海越亚半导体股份有限公司 支撑框架结构及其制作方法

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JPH05160289A (ja) * 1991-12-10 1993-06-25 Fujitsu Ltd 半導体チップの実装構造
KR0124788B1 (ko) * 1994-06-16 1997-11-26 황인길 반도체 패키지용 구리산화물-충진 폴리머 다이 어태치 접착제 조성물
JPH09205044A (ja) * 1996-01-26 1997-08-05 Tokin Corp チップ部品の製造方法
JP3194035B2 (ja) * 1996-04-22 2001-07-30 日本ミクロン株式会社 電子部品用パッケージの製造方法
JPH10308471A (ja) * 1997-05-07 1998-11-17 Akita Denshi Kk 混成集積回路装置およびその製造方法
US6160705A (en) * 1997-05-09 2000-12-12 Texas Instruments Incorporated Ball grid array package and method using enhanced power and ground distribution circuitry
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JP3216626B2 (ja) * 1999-01-20 2001-10-09 日本電気株式会社 増幅装置
JP4480818B2 (ja) * 1999-09-30 2010-06-16 株式会社ルネサステクノロジ 半導体装置
US6477054B1 (en) * 2000-08-10 2002-11-05 Tektronix, Inc. Low temperature co-fired ceramic substrate structure having a capacitor and thermally conductive via

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387061B (zh) * 2005-11-15 2013-02-21 Intel Corp 半導體封裝體抗震增強技術

Also Published As

Publication number Publication date
KR100778209B1 (ko) 2007-11-22
WO2004105127B1 (en) 2005-02-24
CN1791976A (zh) 2006-06-21
WO2004105127A1 (en) 2004-12-02
KR20060009842A (ko) 2006-02-01
TWI239615B (en) 2005-09-11
JP4570610B2 (ja) 2010-10-27
US6787896B1 (en) 2004-09-07
JP2006525653A (ja) 2006-11-09

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