TW200425278A - Relaxed film layer structure and manufacturing method thereof - Google Patents
Relaxed film layer structure and manufacturing method thereof Download PDFInfo
- Publication number
- TW200425278A TW200425278A TW92112105A TW92112105A TW200425278A TW 200425278 A TW200425278 A TW 200425278A TW 92112105 A TW92112105 A TW 92112105A TW 92112105 A TW92112105 A TW 92112105A TW 200425278 A TW200425278 A TW 200425278A
- Authority
- TW
- Taiwan
- Prior art keywords
- film layer
- layer
- thin film
- item
- patent application
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 128
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000005468 ion implantation Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 94
- 238000005229 chemical vapour deposition Methods 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 36
- 238000000407 epitaxy Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000004575 stone Substances 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 13
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- -1 aluminum germanium arsenic Chemical compound 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 claims description 4
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- DWFJEZSKARTQIS-UHFFFAOYSA-N [As].[Ge].[In] Chemical compound [As].[Ge].[In] DWFJEZSKARTQIS-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- PIFBMJMXJMZZRG-UHFFFAOYSA-N 2,2,4,6,6-pentamethyl-1,5-dihydropyrimidine Chemical compound CC1=NC(C)(C)NC(C)(C)C1 PIFBMJMXJMZZRG-UHFFFAOYSA-N 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 239000012212 insulator Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000035755 proliferation Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LUZJGVBGMHRNGF-UHFFFAOYSA-N [Re].[Ge] Chemical compound [Re].[Ge] LUZJGVBGMHRNGF-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- DZGDRKNASIIYCL-UHFFFAOYSA-N [Hf].[Ge].[Si] Chemical compound [Hf].[Ge].[Si] DZGDRKNASIIYCL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92112105A TW200425278A (en) | 2003-05-02 | 2003-05-02 | Relaxed film layer structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92112105A TW200425278A (en) | 2003-05-02 | 2003-05-02 | Relaxed film layer structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200425278A true TW200425278A (en) | 2004-11-16 |
| TWI317145B TWI317145B (enrdf_load_stackoverflow) | 2009-11-11 |
Family
ID=45073325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92112105A TW200425278A (en) | 2003-05-02 | 2003-05-02 | Relaxed film layer structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200425278A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10763328B2 (en) * | 2018-10-04 | 2020-09-01 | Globalfoundries Inc. | Epitaxial semiconductor material grown with enhanced local isotropy |
-
2003
- 2003-05-02 TW TW92112105A patent/TW200425278A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI317145B (enrdf_load_stackoverflow) | 2009-11-11 |
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| MK4A | Expiration of patent term of an invention patent |