TW200420746A - Methods for making metallocene compounds - Google Patents

Methods for making metallocene compounds

Info

Publication number
TW200420746A
TW200420746A TW092130102A TW92130102A TW200420746A TW 200420746 A TW200420746 A TW 200420746A TW 092130102 A TW092130102 A TW 092130102A TW 92130102 A TW92130102 A TW 92130102A TW 200420746 A TW200420746 A TW 200420746A
Authority
TW
Taiwan
Prior art keywords
compound
cyclopentadienide
substituted
metallocene
reacting
Prior art date
Application number
TW092130102A
Other languages
English (en)
Other versions
TWI274082B (en
Inventor
David M Thompson
Cynthia A Hoover
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/685,777 external-priority patent/US6884901B2/en
Priority claimed from US10/686,254 external-priority patent/US6919468B2/en
Priority claimed from US10/685,785 external-priority patent/US7927658B2/en
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of TW200420746A publication Critical patent/TW200420746A/zh
Application granted granted Critical
Publication of TWI274082B publication Critical patent/TWI274082B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
TW092130102A 2002-10-31 2003-10-29 Methods for making metallocene compounds TWI274082B (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US42294602P 2002-10-31 2002-10-31
US42294702P 2002-10-31 2002-10-31
US42628402P 2002-11-14 2002-11-14
US42746102P 2002-11-18 2002-11-18
US44632003P 2003-02-07 2003-02-07
US45371703P 2003-04-18 2003-04-18
US45371803P 2003-04-18 2003-04-18
US45371903P 2003-04-18 2003-04-18
US10/685,777 US6884901B2 (en) 2002-10-31 2003-10-16 Methods for making metallocene compounds
US10/686,254 US6919468B2 (en) 2002-10-31 2003-10-16 Asymmetric group 8 (VIII) metallocene compounds
US10/685,785 US7927658B2 (en) 2002-10-31 2003-10-16 Deposition processes using group 8 (VIII) metallocene precursors

Publications (2)

Publication Number Publication Date
TW200420746A true TW200420746A (en) 2004-10-16
TWI274082B TWI274082B (en) 2007-02-21

Family

ID=32315054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092130102A TWI274082B (en) 2002-10-31 2003-10-29 Methods for making metallocene compounds

Country Status (6)

Country Link
EP (3) EP1556395B1 (zh)
JP (3) JP4560484B2 (zh)
KR (3) KR100997838B1 (zh)
AU (3) AU2003301884A1 (zh)
TW (1) TWI274082B (zh)
WO (3) WO2004041832A2 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7048968B2 (en) 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US6987063B2 (en) 2004-06-10 2006-01-17 Freescale Semiconductor, Inc. Method to reduce impurity elements during semiconductor film deposition
US7816550B2 (en) * 2005-02-10 2010-10-19 Praxair Technology, Inc. Processes for the production of organometallic compounds
US7485338B2 (en) * 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
JP2009007270A (ja) * 2007-06-27 2009-01-15 Tosoh Corp ルテニウム化合物の製造方法および薄膜の製造方法
KR101598485B1 (ko) * 2014-06-20 2016-02-29 주식회사 유진테크 머티리얼즈 성막용 전구체 조성물 및 이를 이용한 박막 형성 방법
KR101636491B1 (ko) 2014-07-09 2016-07-05 한국화학연구원 루테늄 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법
KR102486128B1 (ko) 2020-12-30 2023-01-06 에스케이트리켐 주식회사 유기금속 할로겐화물을 함유하는 금속막 형성용 전구체, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자.

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US3294685A (en) * 1952-04-21 1966-12-27 Gulf Research Development Co Organic compositions containing a metallo cyclopentadienyl
US3035978A (en) * 1957-08-12 1962-05-22 Ici Ltd Ferrocene hematinic compositions and therapy
GB864198A (en) * 1959-01-07 1961-03-29 Ici Ltd A process for the manufacture of ferrocene derivatives
BE623679A (zh) * 1961-10-18
US3535356A (en) * 1968-06-11 1970-10-20 Gulf Research Development Co Process for producing dicyclopentadienyliron compounds
US4066569A (en) * 1975-12-30 1978-01-03 Hughes Aircraft Company Dopants for dynamic scattering liquid crystals
PL124360B1 (en) * 1980-02-27 1983-01-31 Politechnika Gdanska Process for preparing ruthenocene
JPH02250892A (ja) * 1989-03-24 1990-10-08 Idemitsu Kosan Co Ltd 新規フェロセン誘導体，それを含有する界面活性剤及び有機薄膜の製造方法
JPH1125589A (ja) * 1997-07-04 1999-01-29 Matsushita Electric Ind Co Ltd 磁気記録再生装置
JP3371328B2 (ja) * 1997-07-17 2003-01-27 株式会社高純度化学研究所 ビス（アルキルシクロペンタジエニル）ルテニウム錯 体の製造方法およびそれを用いたルテニウム含有薄膜 の製造方法
JP2000281694A (ja) * 1999-03-29 2000-10-10 Tanaka Kikinzoku Kogyo Kk 有機金属気相エピタキシー用の有機金属化合物
JP2001122887A (ja) * 1999-10-25 2001-05-08 Tanaka Kikinzoku Kogyo Kk 化学気相蒸着用の有機金属化合物及びその有機金属化合物の製造方法並びにその有機金属化合物を用いた薄膜の製造方法
JP4162366B2 (ja) * 2000-03-31 2008-10-08 田中貴金属工業株式会社 Ｃｖｄ薄膜形成プロセス及びｃｖｄ薄膜製造装置
TW508658B (en) * 2000-05-15 2002-11-01 Asm Microchemistry Oy Process for producing integrated circuits
JP4512248B2 (ja) * 2000-09-26 2010-07-28 田中貴金属工業株式会社 ビス（アルキルシクロペンタジエニル）ルテニウムの製造方法及びその方法により製造されるビス（アルキルシクロペンタジエニル）ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の化学気相蒸着方法
JP4759126B2 (ja) * 2000-10-11 2011-08-31 田中貴金属工業株式会社 化学気相蒸着用の有機金属化合物及び化学気相蒸着用の有機金属化合物の製造方法並びに貴金属薄膜及び貴金属化合物薄膜の化学気相蒸着方法
JP3598055B2 (ja) * 2000-11-08 2004-12-08 田中貴金属工業株式会社 ビス（アルキルシクロペンタジエニル）ルテニウムの製造方法及びその製造方法により製造されるビス（アルキルシクロペンタジエニル）ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の製造方法
US20020161253A1 (en) * 2001-04-30 2002-10-31 Boulder Scientific Company Synthesis of bis (cyclopentadienyl) and bis (indenyl) ruthenium complexes
US6521772B1 (en) * 2001-09-27 2003-02-18 Praxair Technology, Inc. Synthesis of substituted ruthenocene complexes
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions

Also Published As

Publication number Publication date
WO2004041753A9 (en) 2004-11-25
EP1556394A4 (en) 2008-02-20
WO2004042354A3 (en) 2004-09-23
AU2003301874A1 (en) 2004-06-07
WO2004041832A2 (en) 2004-05-21
EP1556527B1 (en) 2012-12-12
JP2006511598A (ja) 2006-04-06
JP4542506B2 (ja) 2010-09-15
JP2006519303A (ja) 2006-08-24
TWI274082B (en) 2007-02-21
KR100995223B1 (ko) 2010-11-17
AU2003301873A8 (en) 2004-06-07
JP2006504806A (ja) 2006-02-09
AU2003301884A1 (en) 2004-06-07
KR20050084901A (ko) 2005-08-29
EP1556395A2 (en) 2005-07-27
WO2004041832A3 (en) 2004-09-23
KR20050075763A (ko) 2005-07-21
KR100997838B1 (ko) 2010-12-01
EP1556394A2 (en) 2005-07-27
EP1556395B1 (en) 2018-09-12
KR101150551B1 (ko) 2012-07-03
WO2004042354A2 (en) 2004-05-21
EP1556527A2 (en) 2005-07-27
WO2004041753A2 (en) 2004-05-21
JP4538407B2 (ja) 2010-09-08
WO2004041753A3 (en) 2004-09-02
KR20050074975A (ko) 2005-07-19
AU2003301884A8 (en) 2004-06-07
JP4560484B2 (ja) 2010-10-13
EP1556527A4 (en) 2011-05-25
EP1556395A4 (en) 2008-02-20
AU2003301873A1 (en) 2004-06-07
AU2003301874A8 (en) 2004-06-07

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