TW200409147A - Current-carrying electronic component and method of manufacturing same - Google Patents
Current-carrying electronic component and method of manufacturing same Download PDFInfo
- Publication number
- TW200409147A TW200409147A TW092126666A TW92126666A TW200409147A TW 200409147 A TW200409147 A TW 200409147A TW 092126666 A TW092126666 A TW 092126666A TW 92126666 A TW92126666 A TW 92126666A TW 200409147 A TW200409147 A TW 200409147A
- Authority
- TW
- Taiwan
- Prior art keywords
- conducting layer
- electron
- electron conducting
- current
- carrying structure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 131
- 239000004020 conductor Substances 0.000 description 24
- 230000005540 biological transmission Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- WHEATZOONURNGF-UHFFFAOYSA-N benzocyclobutadiene Chemical compound C1=CC=C2C=CC2=C1 WHEATZOONURNGF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/256,789 US6841736B2 (en) | 2002-09-26 | 2002-09-26 | Current-carrying electronic component and method of manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200409147A true TW200409147A (en) | 2004-06-01 |
Family
ID=32029358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092126666A TW200409147A (en) | 2002-09-26 | 2003-09-26 | Current-carrying electronic component and method of manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6841736B2 (enExample) |
| JP (1) | JP2006501682A (enExample) |
| KR (1) | KR20050065558A (enExample) |
| CN (1) | CN1307653C (enExample) |
| AU (1) | AU2003277778A1 (enExample) |
| TW (1) | TW200409147A (enExample) |
| WO (1) | WO2004032205A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100929540B1 (ko) * | 2006-04-28 | 2009-12-03 | 파나소닉 전공 주식회사 | 고주파 전류용의 급전선 |
| US8032089B2 (en) * | 2006-12-30 | 2011-10-04 | Broadcom Corporation | Integrated circuit/printed circuit board substrate structure and communications |
| US9666926B2 (en) * | 2009-09-30 | 2017-05-30 | Panasonic Corporation | Power supply line for high-frequency current, manufacturing method for same, and power supply line holding structure |
| CN104021865A (zh) * | 2014-05-14 | 2014-09-03 | 北京联合大学 | 可降低交流电阻的圆形导体 |
| CN104036857A (zh) * | 2014-05-14 | 2014-09-10 | 北京联合大学 | 可降低交流电阻的矩形导体 |
| CN104409622A (zh) * | 2014-10-15 | 2015-03-11 | 中国计量学院 | 一种高频薄膜热电变换器的结构及制作方法 |
| DE102016212666A1 (de) * | 2016-07-12 | 2018-01-18 | Schweizer Electronic Ag | Verfahren zur Herstellung eines Leiterplattenelements und Leiterplattenelement |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3586757A (en) * | 1969-08-14 | 1971-06-22 | Merle Haldeman Jr | Flexible stripline transmission line |
| US3634810A (en) * | 1970-02-03 | 1972-01-11 | Reynolds Metals Co | Electrical bus bar construction and method of making same |
| DE3530032A1 (de) * | 1985-08-22 | 1987-02-26 | Reiner Mannertz | Stromleitungskabel |
| US5393933A (en) * | 1993-03-15 | 1995-02-28 | Goertz; Ole S. | Characteristic impedance corrected audio signal cable |
| US5527999A (en) | 1995-02-21 | 1996-06-18 | Delco Electronics Corp. | Multilayer conductor for printed circuits |
| US5574260B1 (en) | 1995-03-06 | 2000-01-18 | Gore & Ass | Composite conductor having improved high frequency signal transmission characteristics |
| US5674780A (en) | 1995-07-24 | 1997-10-07 | Motorola, Inc. | Method of forming an electrically conductive polymer bump over an aluminum electrode |
| US5675298A (en) | 1995-11-21 | 1997-10-07 | Sun Microsystems, Inc. | Low-loss, low-inductance interconnect for microcircuits |
| US6100178A (en) * | 1997-02-28 | 2000-08-08 | Ford Motor Company | Three-dimensional electronic circuit with multiple conductor layers and method for manufacturing same |
| US5834995A (en) | 1997-05-01 | 1998-11-10 | The United States Of America As Represented By The Secretary Of The Air Force | Cylindrical edge microstrip transmission line |
| US5922514A (en) | 1997-09-17 | 1999-07-13 | Dale Electronics, Inc. | Thick film low value high frequency inductor, and method of making the same |
| EP0917237B1 (en) | 1997-10-21 | 2005-09-14 | Murata Manufacturing Co., Ltd. | Thin-film multilayered electrode, high-frequency transmission line, high-frequency resonator, and high-frequency filter |
| GB9911307D0 (en) * | 1999-05-14 | 1999-07-14 | Mantock Paul L | Low resistance surface conducting conductor electric cable |
| SE517916C2 (sv) * | 1999-12-17 | 2002-08-06 | Ericsson Telefon Ab L M | Chipsbärare, system och förfarande vid tillverkning av chipsbärare |
-
2002
- 2002-09-26 US US10/256,789 patent/US6841736B2/en not_active Expired - Lifetime
-
2003
- 2003-09-26 WO PCT/US2003/030253 patent/WO2004032205A2/en not_active Ceased
- 2003-09-26 JP JP2004541739A patent/JP2006501682A/ja active Pending
- 2003-09-26 AU AU2003277778A patent/AU2003277778A1/en not_active Abandoned
- 2003-09-26 TW TW092126666A patent/TW200409147A/zh unknown
- 2003-09-26 KR KR1020057005264A patent/KR20050065558A/ko not_active Ceased
- 2003-09-26 CN CNB038229692A patent/CN1307653C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003277778A8 (en) | 2004-04-23 |
| WO2004032205A2 (en) | 2004-04-15 |
| CN1685450A (zh) | 2005-10-19 |
| WO2004032205A3 (en) | 2004-07-01 |
| US20040060724A1 (en) | 2004-04-01 |
| AU2003277778A1 (en) | 2004-04-23 |
| US6841736B2 (en) | 2005-01-11 |
| KR20050065558A (ko) | 2005-06-29 |
| CN1307653C (zh) | 2007-03-28 |
| JP2006501682A (ja) | 2006-01-12 |
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