TW200408003A - Composition and method for wet stripping removal of sacrificial anti-reflective material - Google Patents

Composition and method for wet stripping removal of sacrificial anti-reflective material Download PDF

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Publication number
TW200408003A
TW200408003A TW092119794A TW92119794A TW200408003A TW 200408003 A TW200408003 A TW 200408003A TW 092119794 A TW092119794 A TW 092119794A TW 92119794 A TW92119794 A TW 92119794A TW 200408003 A TW200408003 A TW 200408003A
Authority
TW
Taiwan
Prior art keywords
item
patent application
formulation
composition according
photoresist peeling
Prior art date
Application number
TW092119794A
Other languages
English (en)
Chinese (zh)
Inventor
Thomas H Baum
David Bernhard
David Minsek
Melissa Murphy
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200408003A publication Critical patent/TW200408003A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW092119794A 2002-07-23 2003-07-21 Composition and method for wet stripping removal of sacrificial anti-reflective material TW200408003A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/201,340 US6849200B2 (en) 2002-07-23 2002-07-23 Composition and process for wet stripping removal of sacrificial anti-reflective material

Publications (1)

Publication Number Publication Date
TW200408003A true TW200408003A (en) 2004-05-16

Family

ID=30769632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092119794A TW200408003A (en) 2002-07-23 2003-07-21 Composition and method for wet stripping removal of sacrificial anti-reflective material

Country Status (7)

Country Link
US (1) US6849200B2 (cg-RX-API-DMAC7.html)
EP (1) EP1551936A4 (cg-RX-API-DMAC7.html)
JP (1) JP2005533896A (cg-RX-API-DMAC7.html)
CN (1) CN1671821A (cg-RX-API-DMAC7.html)
AU (1) AU2003249279A1 (cg-RX-API-DMAC7.html)
TW (1) TW200408003A (cg-RX-API-DMAC7.html)
WO (1) WO2004009730A1 (cg-RX-API-DMAC7.html)

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US20070151949A1 (en) * 2006-01-04 2007-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processes and apparatuses thereof
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JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
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JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US10176979B2 (en) 2012-02-15 2019-01-08 Entegris, Inc. Post-CMP removal using compositions and method of use
TW201406932A (zh) 2012-05-18 2014-02-16 尖端科技材料公司 用於自包含氮化鈦之表面脫除光阻劑之組成物及方法
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
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KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
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US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
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Publication number Priority date Publication date Assignee Title
TWI408212B (zh) * 2005-06-07 2013-09-11 尖端科技材料公司 金屬及介電相容犧牲抗反射塗層清洗及移除組成物

Also Published As

Publication number Publication date
US6849200B2 (en) 2005-02-01
EP1551936A1 (en) 2005-07-13
JP2005533896A (ja) 2005-11-10
WO2004009730A1 (en) 2004-01-29
EP1551936A4 (en) 2008-04-16
AU2003249279A1 (en) 2004-02-09
US20040016904A1 (en) 2004-01-29
CN1671821A (zh) 2005-09-21

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