JP2005533896A - 犠牲的反射防止材料の湿式剥離除去のための組成物および方法 - Google Patents

犠牲的反射防止材料の湿式剥離除去のための組成物および方法 Download PDF

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Publication number
JP2005533896A
JP2005533896A JP2004523443A JP2004523443A JP2005533896A JP 2005533896 A JP2005533896 A JP 2005533896A JP 2004523443 A JP2004523443 A JP 2004523443A JP 2004523443 A JP2004523443 A JP 2004523443A JP 2005533896 A JP2005533896 A JP 2005533896A
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JP
Japan
Prior art keywords
formulation
composition
wet stripping
stripping composition
water
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2004523443A
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English (en)
Japanese (ja)
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JP2005533896A5 (cg-RX-API-DMAC7.html
Inventor
バウム，トーマス，エイチ．
バーンハード，デービッド
ミンセク，デービッド
マーフィ，メリッサ
Original Assignee
アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
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Application filed by アドバンスド テクノロジー マテリアルズ，インコーポレイテッド filed Critical アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
Publication of JP2005533896A publication Critical patent/JP2005533896A/ja
Publication of JP2005533896A5 publication Critical patent/JP2005533896A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2004523443A 2002-07-23 2003-07-16 犠牲的反射防止材料の湿式剥離除去のための組成物および方法 Withdrawn JP2005533896A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/201,340 US6849200B2 (en) 2002-07-23 2002-07-23 Composition and process for wet stripping removal of sacrificial anti-reflective material
PCT/US2003/022148 WO2004009730A1 (en) 2002-07-23 2003-07-16 Composition and process for wet stripping removal of sacrificial anti-reflective material

Publications (2)

Publication Number Publication Date
JP2005533896A true JP2005533896A (ja) 2005-11-10
JP2005533896A5 JP2005533896A5 (cg-RX-API-DMAC7.html) 2006-09-21

Family

ID=30769632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004523443A Withdrawn JP2005533896A (ja) 2002-07-23 2003-07-16 犠牲的反射防止材料の湿式剥離除去のための組成物および方法

Country Status (7)

Country Link
US (1) US6849200B2 (cg-RX-API-DMAC7.html)
EP (1) EP1551936A4 (cg-RX-API-DMAC7.html)
JP (1) JP2005533896A (cg-RX-API-DMAC7.html)
CN (1) CN1671821A (cg-RX-API-DMAC7.html)
AU (1) AU2003249279A1 (cg-RX-API-DMAC7.html)
TW (1) TW200408003A (cg-RX-API-DMAC7.html)
WO (1) WO2004009730A1 (cg-RX-API-DMAC7.html)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2023176642A1 (ja) * 2022-03-14 2023-09-21 日本化薬株式会社 処理液およびその使用方法
JP7395795B1 (ja) * 2022-03-14 2023-12-11 日本化薬株式会社 処理液およびその使用方法

Also Published As

Publication number Publication date
US6849200B2 (en) 2005-02-01
EP1551936A1 (en) 2005-07-13
WO2004009730A1 (en) 2004-01-29
EP1551936A4 (en) 2008-04-16
AU2003249279A1 (en) 2004-02-09
TW200408003A (en) 2004-05-16
US20040016904A1 (en) 2004-01-29
CN1671821A (zh) 2005-09-21

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