AU2003249279A1 - Composition and process for wet stripping removal of sacrificial anti-reflective material - Google Patents

Composition and process for wet stripping removal of sacrificial anti-reflective material

Info

Publication number
AU2003249279A1
AU2003249279A1 AU2003249279A AU2003249279A AU2003249279A1 AU 2003249279 A1 AU2003249279 A1 AU 2003249279A1 AU 2003249279 A AU2003249279 A AU 2003249279A AU 2003249279 A AU2003249279 A AU 2003249279A AU 2003249279 A1 AU2003249279 A1 AU 2003249279A1
Authority
AU
Australia
Prior art keywords
composition
reflective material
wet stripping
sacrificial anti
stripping removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003249279A
Other languages
English (en)
Inventor
Thomas H. Baum
David Bernhard
David Minsek
Melissa MURPHY
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2003249279A1 publication Critical patent/AU2003249279A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
AU2003249279A 2002-07-23 2003-07-16 Composition and process for wet stripping removal of sacrificial anti-reflective material Abandoned AU2003249279A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/201,340 US6849200B2 (en) 2002-07-23 2002-07-23 Composition and process for wet stripping removal of sacrificial anti-reflective material
US10/201,340 2002-07-23
PCT/US2003/022148 WO2004009730A1 (en) 2002-07-23 2003-07-16 Composition and process for wet stripping removal of sacrificial anti-reflective material

Publications (1)

Publication Number Publication Date
AU2003249279A1 true AU2003249279A1 (en) 2004-02-09

Family

ID=30769632

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003249279A Abandoned AU2003249279A1 (en) 2002-07-23 2003-07-16 Composition and process for wet stripping removal of sacrificial anti-reflective material

Country Status (7)

Country Link
US (1) US6849200B2 (cg-RX-API-DMAC7.html)
EP (1) EP1551936A4 (cg-RX-API-DMAC7.html)
JP (1) JP2005533896A (cg-RX-API-DMAC7.html)
CN (1) CN1671821A (cg-RX-API-DMAC7.html)
AU (1) AU2003249279A1 (cg-RX-API-DMAC7.html)
TW (1) TW200408003A (cg-RX-API-DMAC7.html)
WO (1) WO2004009730A1 (cg-RX-API-DMAC7.html)

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US7682458B2 (en) * 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
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US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
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TWI408212B (zh) * 2005-06-07 2013-09-11 尖端科技材料公司 金屬及介電相容犧牲抗反射塗層清洗及移除組成物
EP1894230A2 (en) * 2005-06-13 2008-03-05 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
TW200722505A (en) * 2005-09-30 2007-06-16 Rohm & Haas Elect Mat Stripper
SG10201508243UA (en) * 2005-10-05 2015-11-27 Entegris Inc Oxidizing aqueous cleaner for the removal of post-etch residues
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
AU2006340825A1 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US20070151949A1 (en) * 2006-01-04 2007-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processes and apparatuses thereof
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
EP2108039A2 (en) * 2006-12-21 2009-10-14 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
EP2268765A4 (en) * 2008-03-07 2011-10-26 Advanced Tech Materials UNSELECTIVE OXIDIZE WET CLEANING AGENT AND USE
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US10176979B2 (en) 2012-02-15 2019-01-08 Entegris, Inc. Post-CMP removal using compositions and method of use
TW201406932A (zh) 2012-05-18 2014-02-16 尖端科技材料公司 用於自包含氮化鈦之表面脫除光阻劑之組成物及方法
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
CN105621893B (zh) * 2014-12-01 2018-05-01 焦作飞鸿安全玻璃有限公司 蚀刻印刷玻璃的生产方法
CN109399947B (zh) * 2018-10-11 2020-01-31 海南大学 减反射玻璃及其制备方法
JP7395795B1 (ja) * 2022-03-14 2023-12-11 日本化薬株式会社 処理液およびその使用方法

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Also Published As

Publication number Publication date
US6849200B2 (en) 2005-02-01
EP1551936A1 (en) 2005-07-13
JP2005533896A (ja) 2005-11-10
WO2004009730A1 (en) 2004-01-29
EP1551936A4 (en) 2008-04-16
TW200408003A (en) 2004-05-16
US20040016904A1 (en) 2004-01-29
CN1671821A (zh) 2005-09-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase