200402128 玖、發明說明： 【發明所屬之技術領域】 發明所屬之技術領域 本發明係有關於一種稱為QFN(Quad Flat Non-Leaded 5 Package)、S0N(Small Outline Non-Leaded Package)，係使 用於半導體裝置之樹脂密封，以於封裝上面以樹脂進行密 封，且於其下面緣部使引線露出之膜貼著裝置及膜著方法。 習知技術 10 以往，眾所皆知之QFN類型之半導體裝置，係沒有於 封裝側方突出之外引線，而於封裝下面緣部使用以與母基 板進行電性連接之引線露出代替之。 前述半導體裝置之樹脂密封係，例如，將半導體晶片3 黏著於引線架1之晶粒座2(第12A圖），並將前述半導體晶片 15 3與引線架1之引線4以導線5打線接合後（第12B圖），以上模 6及下模7夾緊前述引線架1形成孔6a(第12C圖），且藉於前 述孔6a注入樹脂8，得到半導體装置（第13A圖、第13B圖）。 然而，第13A圖、第13B圖係分開各半導體裝置前之狀態， 尤其，第13A圖中係於業已透視樹脂8之狀態下以一點鍊線 20 顯示樹脂8之邊界。 然而，因樹脂注入時之樹脂壓力，前述引線4、晶粒座 2容易升高。因此，例如，於前述引線4下面擴展樹脂8，引 線4下面會被樹脂覆蓋，因此，無法使半導體裝置電性連接 於母基板。 200402128 為了解決前述缺點，業已有如第14A圖、第14B圖所 不，於引線架1下面貼著膜9使其一體化後，進行樹脂密封 之方法。然而，習知樹脂密封方法中，僅第14A圖之以陰影 線所示之領域9a可以上下模夾緊。因此，第14B圖之波狀線 5所示之膜9之領域9b，即，不僅位於最外側之引線4之下面 内側緣部，而且晶粒座2之下面全面亦沒有完全密著於膜 9。其結果為，注入之樹脂8於引線4下面擴展且被覆，或者 於晶粒座2下面，樹脂保持擴展之狀態而固化，而使最終製 品下面有產生凹凸不平之虞。因此，業已有另外之電子零 10件樹脂密封方法(例如，參照專利文獻1) 專利文獻1 國際公開第00/66340號文件 即’將業以重疊於黏著膜之引線架，以具有平坦面之 下夾體與具有格子狀之按壓突部之上夾體夾緊並貼著一體 15 化後’進行樹脂密封之方法。 發明欲解決之課題 然而，前述膜貼著方法中，引線架、上下夾體、膜於 厚度尺寸、面精度上均具有不均一性。因此，於其業已組 合之情況下，因累積誤差，上下夾體所負荷之按壓負栽不 20 均一。其結果為，無法將膜均一地貼著於引線架下面，於 樹脂密封時無法完全防止樹脂侵入膜與引線架之縫隙。 【^^明内j 發明概要 本發明鑑於前述缺點，係以提供一種膜貼著裝置及膜 200402128 貼著方法為目的，該膜貼著裝置係可完全地防止樹脂密封 時之樹脂之擴展且可使膜均一地貼著於半導體裝置下面並 一體化者。 用以解決課題之手段 5 本發明之膜貼著裝置，為了達成前述目的，係將膜可 自由剝離地貼著於業已利用導線連接搭載於晶粒座之半導 體晶片與引線之基板下面者，且，該膜貼著裝置係由上夾 體與下夾體構成，該上夾體係於下面具有不干擾前述半導 體晶片及導線等之凹處者，而前述下夾體則係於載置前述 10 膜之載置面設置有通氣孔者，且係利用前述下夹體與前述 上夾體夾緊前述基板之外周緣部，並且可將來自前述通氣 孔之氣體回流由負壓切換至正壓。 此外，前述基板不僅包含由金屬單體構成之引線架， 亦可為由樹脂材構成之樹脂製基板，例如，高精細有機封 15 裝基板。 依據本發明，藉將來自前述下夾體中之通氣孔之氣體 回流由負壓切換至正壓，可於不會使前述半導體晶片及導 線等損傷之情況下，以氣壓將前述膜按壓於基板。因此， 前述膜係均一地密著於基板，並相互地貼著一體化。其結 20 果為，即使以樹脂密封，樹脂亦不會擴展至該基板下面， 可得到良好之半導體裝置。 亦可設置連通前述上夾體之凹處之通風孔。依據本實 施形態，氣體由前述通風孔排出，因此，即使使前述通氣 孔之氣體回流由負壓切換至正壓，前述膜與基板之間亦不 7 200402128 會殘留氣體，可使膜與基板更加確實地貼著一體化。 前述上失體之凹處内，亦可突出設置有限制基板過度 浮起之位置限制用突部。 依據本實施形態，藉防止前述基板過度浮起，可防止 5半導體晶片或基板破損。 前述上夾體之凹處内，亦可突出設置有多數區隔晶粒 座，且與下夾體一起夾緊前述基板之夾緊用突部。 依據本實施形態，前述夾緊用突部係使基板之浮起情 況減小，使前述膜與基板更加確實地黏著。 ίο 位於前述晶粒座下方側之通氣孔，與位於晶粒座下方 側以外之通氣孔可不連續。 依據本實施形態，前述位於晶粒座下方側之通氣孔與 位於晶粒座下方侧以外之通氣孔可於不同時點使氣體回流 由負壓切換至正壓。 15 載置敵下夾狀載置面亦可形成有連❹數通氣 孔，且位於引線下方側之通氣溝。 依據本實施形態，藉使前述通氣孔之氣體回流由負壓 切換至正壓，可使位於形成有通氣溝之部分之膜確實地^ 著黏貼於引線架。因此，於樹脂密封時可防止樹脂朝^ 20 架裡面側擴展’可確貫地防止接觸不良。 尤其，於載置前述膜之下失體之載置面，亦可形成有 連接多數通氣溝’且位於切斷前之引線之自由端下方 通氣溝。 依據本實施形態，藉使前述通氣孔之氣體回流由負壤 200402128 切換至正壓，可使前述膜確實地密著並貼著於切斷前之引 線之自由端緣部。因此，於樹脂密封時可防止樹脂朝引線 裡面側擴展，可更加確實地防止接觸不良。 前述膜可於至少一端緣部延伸出具有由基板外周緣部 5 突出之形狀之剝離用舌片。 依據本實施形態，樹脂密封後之膜剝離作業更簡單、 方便，且可輕易地自動化。 本發明之膜貼著方法，係將膜可自由剝離地貼著於業 已利用導線連接搭載於晶粒座之半導體晶片與引線之基板 ίο下面者，且其係由將前述膜載置於下夾體之形成有通氣孔 之載置面，然後將前述基板重疊於前述膜上，並利用於下 面具有不干擾半導體晶片及導線等之凹處之上爽體與下夹 體夾緊前述基板之周緣部後，使氣體由前述通氣孔吐出之 步驟構成。 15 又，本發明之另一膜貼著方法，係將與可自由剝離地 貼著於業已利用導線連接搭載於晶粒座之半導體晶片與引 線之基板下面者，且其係由於前述膜載置於下夾體之形200402128 发明 Description of the invention: [Technical field to which the invention belongs] The technical field to which the invention belongs The present invention relates to a type called QFN (Quad Flat Non-Leaded 5 Package) and SON (Small Outline Non-Leaded Package), which are used in The semiconductor device is sealed with a resin, and the upper surface of the package is sealed with resin, and the film is adhered to the device and the method for exposing leads on the lower edge. Known technology 10 In the past, the well-known QFN type semiconductor devices did not have leads protruding outside the package side. Instead, the exposed edges of the lower edge of the package were used to expose the leads electrically connected to the mother substrate. The resin sealing system of the aforementioned semiconductor device is, for example, bonding a semiconductor wafer 3 to a die pad 2 of a lead frame 1 (FIG. 12A), and bonding the semiconductor wafer 15 3 and the lead 4 of the lead frame 1 with a wire 5 (Figure 12B), the upper mold 6 and the lower mold 7 clamp the lead frame 1 to form a hole 6a (Figure 12C), and inject resin 8 through the hole 6a to obtain a semiconductor device (Figures 13A and 13B) . However, FIGS. 13A and 13B show the state before the semiconductor devices are separated. In particular, FIG. 13A shows the boundary of the resin 8 with a dot chain line 20 in a state where the resin 8 has been seen through. However, due to the resin pressure at the time of resin injection, the lead wire 4 and the die holder 2 are easily raised. Therefore, for example, if the resin 8 is extended under the lead 4 and the bottom of the lead 4 is covered with resin, the semiconductor device cannot be electrically connected to the mother substrate. 200402128 In order to solve the aforesaid disadvantages, as shown in Figs. 14A and 14B, there has been a method of sealing the resin by attaching a film 9 under the lead frame 1 to integrate them. However, in the conventional resin sealing method, only the area 9a shown by hatching in Fig. 14A can be clamped by the upper and lower molds. Therefore, the area 9b of the film 9 shown by the wavy line 5 in FIG. 14B, that is, not only the inner edge portion below the outermost lead 4 but also the entire underside of the die seat 2 is not completely adhered to the film 9 . As a result, the injected resin 8 expands and coats under the lead 4 or under the die pad 2, the resin remains in an expanded state and solidifies, which may cause unevenness under the final product. Therefore, there has been another method of sealing electronic parts with 10 resins (for example, refer to Patent Document 1). Patent Document 1 International Publication No. 00/66340, that is, a lead frame that overlaps with an adhesive film to have a flat surface A method for resin sealing after clamping the lower clamp body and the upper clamp body with a grid-shaped pressing protrusion and sticking them together. Problems to be Solved by the Invention However, in the aforementioned film bonding method, the lead frame, the upper and lower clamps, and the film have non-uniformity in thickness and surface accuracy. Therefore, in the case where it has been combined, due to the cumulative error, the pressure load on the upper and lower clamps is not uniform. As a result, the film cannot be uniformly adhered to the underside of the lead frame, and the resin cannot be completely prevented from entering the gap between the film and the lead frame when the resin is sealed. [^^ 明 内 j Summary of the invention In view of the foregoing shortcomings, the present invention aims to provide a film sticking device and a film 200402128 sticking method. The film sticking device can completely prevent the expansion of the resin during resin sealing and can The film is uniformly adhered under the semiconductor device and integrated. Means for Solving the Problem 5 In order to achieve the above-mentioned object, the film bonding device of the present invention is capable of freely peeling a film under a substrate that has been connected by a wire to a semiconductor wafer mounted on a die holder and a lead, The film attachment device is composed of an upper clip body and a lower clip body. The upper clip system has a recess below that does not interfere with the semiconductor wafer and the wires, and the lower clip body is provided with the 10 films. The mounting surface is provided with a vent hole, and the outer peripheral portion of the substrate is clamped by the lower clamp body and the upper clamp body, and the gas return from the vent hole can be switched from negative pressure to positive pressure. In addition, the substrate includes not only a lead frame made of a metal monomer, but also a resin substrate made of a resin material, for example, a high-definition organic package substrate. According to the present invention, by switching the gas return flow from the vent holes in the lower clamp body from a negative pressure to a positive pressure, the film can be pressed on the substrate with air pressure without damaging the semiconductor wafer and the wires. . Therefore, the aforementioned film systems are uniformly adhered to the substrate and are integrated with each other. As a result, even if sealed with a resin, the resin does not spread under the substrate, and a good semiconductor device can be obtained. A vent hole communicating with the recess of the upper clamp body may also be provided. According to this embodiment, the gas is exhausted through the ventilation holes. Therefore, even if the gas return flow of the ventilation holes is switched from negative pressure to positive pressure, no gas will remain between the film and the substrate. It is firmly integrated. In the recess of the upper body, a position restricting protrusion for restricting excessive floating of the substrate may be provided prominently. According to this embodiment, the semiconductor substrate or the substrate can be prevented from being damaged by preventing the substrate from floating excessively. In the recess of the upper clamp body, a plurality of partitioning die seats may be protrudingly provided, and the clamping protrusions for clamping the substrate together with the lower clamp body. According to this embodiment, the clamping protrusions reduce the floating of the substrate, so that the film and the substrate are more surely adhered. ο The vent holes located on the lower side of the aforementioned die seat may be discontinuous from the vent holes located on the lower side of the die seat. According to this embodiment, the above-mentioned vent holes located on the lower side of the die seat and the vent holes located on the side other than the lower side of the die seat can switch the gas backflow from negative pressure to positive pressure at different points in time. 15 Clamp-shaped mounting surfaces on which the enemy is placed may be formed with flail vents, and the ventilation grooves are located on the lower side of the lead. According to this embodiment, if the gas return flow of the vent hole is switched from negative pressure to positive pressure, the film located at the portion where the vent groove is formed can be reliably adhered to the lead frame. Therefore, it is possible to prevent the resin from spreading toward the back side of the ^ 20 frame when the resin is sealed, and it is possible to surely prevent poor contact. In particular, on the mounting surface on which the body which is lost under the aforementioned film is placed, there may be formed a ventilation groove connected to most of the ventilation grooves' and located below the free end of the lead before cutting. According to this embodiment, by switching the gas return flow of the vent hole from negative soil 200402128 to positive pressure, the film can be reliably adhered to the free end edge of the lead wire before cutting. Therefore, the resin can be prevented from spreading toward the inner surface of the lead during the resin sealing, and contact failure can be prevented more reliably. The film may have a peeling tongue having a shape protruding from the outer peripheral edge portion 5 of the substrate at at least one edge portion. According to this embodiment, the film peeling operation after resin sealing is simpler, more convenient, and can be easily automated. The film attaching method of the present invention is a method in which a film can be freely peeled on a substrate which has been connected by a wire to a semiconductor wafer mounted on a die holder and a lead substrate, and the film is placed in a lower clamp. The mounting surface of the body is formed with a vent hole, and then the substrate is superposed on the film, and the peripheral edge of the substrate is clamped by the upper body and the lower clamp body which have recesses that do not interfere with semiconductor wafers and wires. After the treatment, the step of causing gas to be discharged from the vent hole is performed. 15 Another method for attaching a film according to the present invention is a method for attaching a film which can be freely peeled to a substrate which has been connected by a wire to a semiconductor wafer mounted on a die holder and a lead. In the shape of the lower clip
有通氣孔之載置面，以透過前述通氣孔吸 A J ' 固持刚述膜， 並將前述基板重疊於前述膜上，且於利用 ' 於下面具有不千 基板之周緣部後’使來自前述通氣孔之氣發 換至正壓之步驟構成。 擾半導體晶片及導線等之凹處之上央妒盘 β , /、下爽體夾緊前述 回流由負壓切 前述發明皆以由前述通氣孔吐屮 & , 出之虱體按壓膜，因 體化。因此， 此，可前述使膜與基板均一地密著並貼著 20 200402128 即使以樹脂密封時，樹脂亦不會擴展至基板下面，得到良 好之半導體裝置。 、 又’依據本發明之實施形態，亦可於將前述位於晶粒 座下方側之通氣孔由負壓切換至正壓後，使位於晶粒座下 5 方側以外之通氣孔由負壓切換至正壓。 依據本實施形態，前述膜隙先貼著於晶粒座下面後， 再貼著於位於晶粒座周圍之引線等。因此，前述基板與膜 之間氣體不易殘留，可使兩者沒有縫隙地密著而貼著一體 化。 · 10 且，亦可將前述業已貼著之基板與膜載置於加熱體上 面’並加熱前述加熱體使前述基板與前述膜更加密著。 依據本實施形態，具有可使前述基板與膜更加牢固地 貼著一體化之效果。 【方包方式]| 15 發明之實施形態 將本發明之實施形態依照第1圖至第11圖進行說明。如 第1圖至第6圖所示，針對業已將第1實施形態之膜貼著裝置 ® 10組合於樹脂密封裝置40之情況進行說明。 第1圖所示之前述膜貼著裝置10,係如第2圖至第5圖所 20示’具有由下夾體21與上夾體25構成之膜貼著單元20。且， 前述膜貼著單元2〇，係如第1圖所示，係使由膜供給單元11 供給之膜30，與由輸入匣緩衝單元12供給之引線架31貼著 一體化者。 前述下夾體21，如第2圖所示，係藉於表面以預定之間 10 200402128 距配置通氣孔22、23，而可μ、固持膜3〇。尤其，如第 6Β圖所不，前述通氣孔22、23中，中央通氣孔22係配置於 晶粒座32之下面中央’且前述ρ馬部通氣孔23係配置於以前 述晶粒座33為中^之對角線上之隅部。然而，中央通氣孔 5 22與隅部通氣孔23並沒有互相連通，氣體之吸引、吐出控 制係不同之系統。 另外，如第3圖所示，前述上夾體25係透過滑動軸％ 可上下移動，而可定位於前述下夾體21上面。且，前述上 夹體25下面係設置有不干擾基板31之半導體晶片％及導線 10 35等之凹處25a。且，前述上夾體25之下面緣部係設置有卡 止、抓持引線架31之兩側緣部之抓持爪27。前述抓持爪27 係可嵌合業已設置於前述下夾體21上面之凹部21&。 义 月丨j 述凹處25a之頂面係形成有限制引線架31過度浮起之位置 限制用突部28，且以預定間隔形成有通風孔25b。 15 此外，前述由膜供給單元11供給之膜30，亦可由直尺 狀之連續帶狀片切成必要之長度而使用，或者亦可僅載置 業已預先切成者而使用。又，前述引線架31結束黏晶步驟、 打線接合之步驟，搭載於晶粒座32之半導體晶片3埃弓I線 34業已利用導線35電性連接。31a係使晶粒座&支撐於么 又，黏著於前述引線架31之前述膜30，並不限定並兩 之黏著類型，例如，可為加熱而增加黏著力之熱炫類 或者藉紫外線可輕易地剝離之類型等。 又 前述輸入匣緩衝單元12，係堆積 收納有多數引線 11 200402128 架 31 之 、， 4述匣13係透過匣升降單元14搬送，_ 架31二地供给至預定之待機台15。 、將引線 並-=之::以前述膜貼著裝置1〇使膜貼著於引線架31 體化之步驟進行說明。 5 10 "先取初’使由膜供給單元咖給之膜 位於膜貼著單元20之下爽體21，且透過通氣孔22、=疋 膜30。且，同時錢13由輸入_單元12透過 牛早凡14搬运。接著，由㈣一一地供給弓1線架31， 使f於待機台15待機。ϋ上夾體25之抓持爪27抓持引 線木31之兩端緣並搬送，並堆積於前述膜如。1，以前述 下夾體21與前述上失體25夾緊前述膜30及前述引線架31之 周邊緣部。 然後，使中央通氣孔22之氣體回流由負壓切換至正壓 後，使隅部通氣孔23之氣體回流由負壓切換至正壓。因此， 15位於晶粒座32之下面中央之膜30之一部份密著後，膜3〇依 序密著並貼著於繫桿31a、引線34下面。膜3〇係由晶粒座32 之下面中央朝外側貼著，因此，膜30與引線架31之間殘留 之空氣被壓出。且，壓出之空氣係由上夾體25之通風孔25b 排出至外部。 20 且’藉使氣體由前述下夾體21之中央通氣孔22及隅部 通氣孔23吐出，朝上方按壓密著之膜3〇與引線架31，膜30 與引線架31更加牢固地貼著一體化。然而，引線架31僅浮 起預定量時，位置限制用突部28係抵接引線架31中位於封 裝與封裝之間之部分而限制引線架31之位置，防止引線架 12 200402128 31之塑性變形。 膜之貼著一體化，係不限於前述實施形態，例如，亦 可藉由上夹體25之通風孔25b吸％並減壓，使前述膜3〇及前 述引線架31相互地吸引並貼著—體化。 5 又，膜30之另一貼著方法係亦可供給膜30至下夾體21 後’載置引線架31並決定位置。接著，加熱下夾體21，使 膜30之黏著力增加後，使前述膜3〇及前述引線架31相互地 吸引而貼著一體化。 業已使膜30貼著一體化之前述引線架31，係如第1圖所 10示，透過撿拾與加壓單元16搬送至樹脂密封裝置4〇之引線 架傳适單元41。搬送至前述引線架傳送單元41之引線架31 係透過内裝載機42搬送至預熱單元43，並加熱預定時間。 且’内裝載機42接收業已加熱之引線架31與錠搬運器 44所搬來之旋45(固體樹脂材料），並搬送至業已安裝於加壓 15單兀46之下模47。且，將引線架31與錠45放置於下模47之 預定位置。 接著’使下模47上升並壓接於圖未示之上模，而夾緊 引線架31並形成孔，且以圖未示之導熱單元加熱、熔解樹 脂，並射出至前述孔内以充填之，而密封半導體晶片33、 20 導線35等。 使下模47下降而使上模敞開後，以卸載機48由下模47 取出树脂岔封結束之引線架36，並搬送至雙鱷口式單元 49 °雙鐘口式單元49由搬來之樹脂密封結束之引線架36分 離製品37與僅由樹脂構成之，並將不需要之部分38丟棄。 13 ★且，撿拾單元50將雙鱷口式單元49上之製品37搬送至 膜旬離單元51。膜剝離單元51將製品37之貼著於引線架31 下面之膜30剝離。膜30之剝離作業，例如，可舉例有以膜 夾頭單元（圖未示）夾住由膜3〇一端延伸出之舌片，由製品 下面剝離之方法。又，亦可於引線架31之一部份設置缺口 部（圖未示），並抓住由該缺口部露出之膜3〇且由製品之下面 剝離。 然後，撿拾單元50將業已剝離膜30之製品37搬送並堆 積於輸出緩衝單元52。 本發明之第2實施形態，係如第7A、7B圖所示，係與 前述第1實施形態大致相同。不同之處在於係區隔為多數半 導體裝置（第7B圖），與前述第1實施形態以一定之間隔配置 所有半導體裝置不同（第6A圖）。依據本實施形態，如第7A 圖所示，於上夾體25之凹處25a之頂面形成有前述位置限制 用突部28’且形成有分別夾緊多數前述半導體裝置之夹緊 用突部29。 依據本實施形態，可有效率地限制引線架31之浮起， 因此’具有可更加確實地貼著一體化之優點。 第3實施形態係如第8圖所示，係適用於具有與第2實施 形態不同形狀之引線34之引線架31之情況。於同一部分附 上同一編號並省略說明。然而，31b係表示切線，28a則係 表示位置限制用突部28(第8B圖）所按壓之領域之邊界線， 然而，但沒有圖示半導體晶片。 第4實施形態，係如第9圖所示，係使用與第3實施形態 200402128 同一形狀之引線架31之情況，不同之處在於在下夾體21上 面設置有相互連接多數隅部通氣孔23之通氣溝23a(以剖面 顯示）。前述通氣溝23a係位於引線架31中切割開前之引線 34之自由端下方側，且，係形成為連續。 5 依據本實施形態，藉使隅部通氣孔23之氣體回流由負 壓切換至正壓，可使膜30確實地密著而貼著於切斷前之引 線34之自由端緣部。因此，於樹脂密封時可防止樹脂擴展 至引線34裡面側，可更加確實地防止接觸不良。 本發明之第5實施形態，係如第1〇圖所示，係與前述第 10 1實施形態大致相同。不同之點在於膜貼著步驟之下一步驟 中配置有加熱體17。 第5實施形態中，係將藉前述步驟密著之膜30及引線架 31載置於加熱體17並加熱。因此，具有可使前述膜30及前 述引線架31更加牢固地密著之優點。 15 本發明之第6實施形態，係如第11圖所示，係使帶貼著 裝置10為完全獨立活動之類型。 本實施形態中，至膜30與引線架31貼著一體化之前為 同一步驟。且，以加熱體17加熱業已貼著於膜30而一體化 之引線架31後，以運送機等之搬送至引線架輸出單元19， 20 並收納於空匣19a。且，第6實施形態中，以自動樹脂密封 裝置或手動加壓裝置進行樹脂密封。此外，本實施形態中， 不一定需要加熱體17，可配合使用之膜選擇是否加熱。 依據本實施形態，可使膜貼著裝置10單獨地動作。因 此，可自由地選擇裝置於工廠内之設置位置，具有設置空 15 200402128 間之自由度增加之優點。 前述實施形態中’敘述了於供氣並加壓之狀態下使膜 30及引線架31貼著之方法、於吸氣並減壓之狀態下使膜3〇 及引線架31貼著之方法、以吸引與供氣使膜30及引線架31 5貼著之方法、及以吸引與供氣使膜30及引線架31密著後， 藉加熱使膜之黏著力增加，使膜及引線架更加牢固地密著 之方法。 此外，亦可於夾緊之上下夾體中，一面以下夾體加熱， 一面於供氣至下夾體且加壓之狀態下使兩者密著，或者一 10 面以下夾體加熱，一面於使上夾體内吸氣並減壓之狀態下 使兩者貼著一體化。依據本方法，可有效率地且省空間地 使膜及引線架貼著一體化。 發明之效果 依據本發明，藉使來自下夾體中之通氣孔之氣體回流 15 由負壓切換至正壓，於不會使半導體晶片及導線等損傷之 情況下，可以氣壓將膜按壓於基板。因此，膜係均一地密 著於基板’並相互地貼著一體化。其結果為即使以樹脂密 封，樹脂亦不會擴展至基板下面，得到良好之半導體裝置。 【圖式簡單說明】 20 第1圖係本發明之第1實施形態之半導體樹脂密封裝置 之俯視圖。 第2圖係顯示本發明之第1實施形態之膜貼著裝置之截 面圖。 第3圖係顯示接續第2圖之膜貼著步驟之圖。 200402128 第4圖係顯示接續第3圖之膜貼著步驟之圖。 第5圖係顯示接續第4圖之膜貼著步驟之圖。 第6A圖係顯示引線架之支撐領域之俯視圖，第6B圖則 係第6A圖之部分放大圖。 5 第7A圖係顯示第2實施形態之膜貼著步驟之截面圖，第 7B圖係顯示引線架之支撐領域之俯視圖。 第8 A圖係顯示第3實施形態之引線架之支撐領域之俯 視圖，第8B圖係顯示膜貼著裝置之截面圖。 第9A圖係顯示第4實施形態之引線架之支撐領域之俯 10 視圖，第9B圖係顯示膜貼著裝置之截面圖。 第10圖係本發明之第5實施形態之半導體樹脂密封裝 置之俯視圖。 第11圖係本發明之第6實施形態之半導體樹脂密封裝 置之俯視圖。 15 第12A圖、12B圖、12C圖係顯示習知例之半導體裝置 之樹脂密封步驟之說明圖。 第13A圖及第13B圖係顯示習知例之半導體裝置之樹 脂密封方法之俯視圖及截面圖。 第14圖及第14B圖係習知例之另一半導體裝置之樹脂 20 密封方法之俯視圖及放大截面圖。 【圖式之主要元件代表符號表】 10…膜貼著裝置 11…膜供給單元 12…輸入匣緩衝單元 17 200402128 13···匣 14.. .匣升降單元 15.. .待機台 16…撿拾與加壓單元 17.. .加熱體 18…搬送裝置 19.. .引線架輸出單元 19a...空匡 20.. .膜貼著單元 21.. .下夾體 21a···凹部 22.23.. .通氣孔 23a...通氣溝 25.. .上夾體 25a...凹處 25b...通風孔 26…滑動軸 27.. .抓持爪 28.. .限制用突部 28a...邊界線 29.. .夾緊用突部 30.. .膜 31.. .引線架，基板 31b...切線 200402128 32…晶粒座 33.. .半導體晶片 34…引線 35.. .導線 36…樹脂密封結束之引線架 37···製品 38.. .不需要之部分 40…樹脂密封裝置 41.. .引線架傳送單元 42···内裝載機 43…預熱單元 44…錠搬運器 45··.錠 46…加壓單元 47…下模 48··.卸載機 49·.·雙鱷口式單元 50···撿拾單元 51···膜剝離單元 52.. .輸出緩衝單元A mounting surface with a vent hole is used to suck AJ through the vent hole to hold the film, and to superimpose the substrate on the film, and after using a peripheral portion with thousands of substrates underneath to make the film from the vent Stomatal gas is sent to positive pressure. Disturbing semiconductor wafers and wires, etc., above the central jealous disk β, /, the lower body is clamped by the aforementioned reflow, cut by negative pressure, the aforementioned inventions are all vomited by the vents & Body. Therefore, in this way, the film and the substrate can be uniformly adhered and adhered as before. 20 200402128 Even when sealed with a resin, the resin does not spread under the substrate, and a good semiconductor device can be obtained. According to the embodiment of the present invention, after the aforesaid vent holes located on the lower side of the die seat are switched from negative pressure to positive pressure, the vent holes located on the other side below the die seat are switched from negative pressure. To positive pressure. According to this embodiment, the aforementioned film gap is adhered to the lower surface of the die pad first, and then to the leads and the like located around the die pad. Therefore, it is difficult for the gas to remain between the substrate and the film, and the two can be closely integrated without gaps. • 10, the substrate and the film that have been pasted may be placed on a heating body 'and the heating body may be heated to make the substrate and the film more dense. According to this embodiment, there is an effect that the substrate and the film can be more firmly adhered and integrated with each other. [Square package method] | 15 Embodiments of the invention Embodiments of the present invention will be described with reference to FIGS. 1 to 11. As shown in Fig. 1 to Fig. 6, a case where the film sticking device ® 10 of the first embodiment is combined with the resin sealing device 40 will be described. The aforementioned film sticking device 10 shown in FIG. 1 has a film sticking unit 20 including a lower clip 21 and an upper clip 25 as shown in FIG. 20 to FIG. 5. In addition, as shown in FIG. 1, the film bonding unit 20 is configured by bonding the film 30 supplied from the film supply unit 11 and the lead frame 31 supplied from the input buffer unit 12. As shown in FIG. 2, the lower clip body 21 can arrange the ventilation holes 22 and 23 at a predetermined distance of 10 200402128 on the surface, and can hold the film 30 μ. In particular, as shown in FIG. 6B, among the aforementioned vent holes 22 and 23, the central vent hole 22 is disposed at the center below the die seat 32 'and the aforementioned poma portion vent hole 23 is arranged with the aforementioned die seat 33 as the center ^ The crotch on the diagonal. However, the central vent hole 5 22 and the crotch vent hole 23 are not in communication with each other, and the system for controlling the suction and discharge of gas is different. In addition, as shown in FIG. 3, the upper clip body 25 can be moved up and down through the sliding shaft%, and can be positioned on the upper surface of the lower clip body 21. In addition, a recess 25a is provided on the lower surface of the upper clamp body 25 so as not to interfere with the semiconductor wafer% of the substrate 31 and the wires 1035. In addition, the lower edge portion of the upper clip body 25 is provided with gripping claws 27 for locking and gripping both edge portions of the lead frame 31. The aforementioned gripping claw 27 is a recessed part 21 & which can be fitted on the upper surface of the lower clip 21. The top surface of the recess 25a is formed with a restricting protrusion 28 for restricting the lead frame 31 from floating excessively, and ventilation holes 25b are formed at predetermined intervals. 15 In addition, the film 30 supplied from the film supply unit 11 described above may be used by cutting it with a ruler-like continuous band-shaped sheet to a necessary length, or it may be used by placing only the previously cut one. In addition, the lead frame 31 ends the die-bonding step and the wire bonding step, and the semiconductor wafer 3 Angow I line 34 mounted on the die base 32 has been electrically connected by the wire 35. 31a is used to support the die seat & to adhere to the film 30 of the lead frame 31, and is not limited to the two types of adhesion. For example, a heat type that can increase the adhesion for heating or can be made by ultraviolet rays. Easily peelable type, etc. The aforementioned input cassette buffer unit 12 is stacked and accommodates a large number of leads 11 200402128 rack 31. The cassette 13 is transported through the cassette lifting unit 14, and the rack 31 is supplied to the predetermined standby stand 15. 2. Connect the leads to-= :: The steps of forming the film on the lead frame 31 by using the film attaching device 10 described above will be described. 5 10 " First take the first place 'so that the film supplied by the film supply unit is located below the film adhering unit 20 and passes through the vent hole 22, = 疋 film 30. In addition, the money 13 is carried by the input unit 12 through Niu Zaofan 14 at the same time. Next, the bow 1 wire rack 31 is supplied one by one, and f is put on standby at the standby table 15. The gripping claws 27 of the upper clamp body 25 grip and transport the both ends of the lead wire 31, and deposit them on the aforementioned film. 1. The peripheral edges of the film 30 and the lead frame 31 are clamped by the lower clamp body 21 and the upper loss body 25. Then, after the gas return of the central vent hole 22 is switched from negative pressure to positive pressure, the gas return of the crotch vent hole 23 is switched from negative pressure to positive pressure. Therefore, after a part of the film 30 located at the center of the lower surface of the die pad 32 is adhered, the film 30 is sequentially adhered and adhered to the bottom of the tie rod 31a and the lead 34. The film 30 is attached from the center of the lower surface of the die holder 32 to the outside, so that the air remaining between the film 30 and the lead frame 31 is pressed out. Moreover, the extruded air is exhausted to the outside through the ventilation hole 25b of the upper clamp body 25. 20 And 'If the gas is expelled from the central vent hole 22 and the crotch vent hole 23 of the lower clip 21 mentioned above, the tight film 30 and the lead frame 31 are pressed upward, and the film 30 and the lead frame 31 are more firmly attached to the whole. Into. However, when the lead frame 31 floats only a predetermined amount, the position restricting protrusion 28 abuts a portion of the lead frame 31 between the package and the package to restrict the position of the lead frame 31 to prevent plastic deformation of the lead frame 12 200402128 31 . The adhesion of the film is not limited to the foregoing embodiment. For example, the ventilation hole 25b of the upper clip 25 can be used to absorb and reduce the pressure, so that the film 30 and the lead frame 31 can be attracted and adhered to each other. — Body. 5. Another method for attaching the film 30 is to feed the film 30 to the lower holder 21 and place the lead frame 31 thereon to determine the position. Next, the lower body 21 is heated to increase the adhesive force of the film 30, and then the film 30 and the lead frame 31 are attracted to each other and integrated together. The aforementioned lead frame 31 having the film 30 integrated thereon is transported to the lead frame transfer unit 41 of the resin sealing device 40 through the pick-up and pressing unit 16 as shown in FIG. 10. The lead frame 31 transferred to the lead frame transfer unit 41 is transferred to the preheating unit 43 through the internal loader 42 and is heated for a predetermined time. And, the inner loader 42 receives the heated 45 (solid resin material) from the heated lead frame 31 and the ingot carrier 44 and transfers it to the lower die 47 which has been installed under the pressure 15 unit 46. Further, the lead frame 31 and the ingot 45 are placed at predetermined positions of the lower die 47. Next, 'lower die 47 is raised and crimped to the upper die (not shown), and the lead frame 31 is clamped to form a hole, and the resin is heated and melted with a heat transfer unit (not shown), and injected into the aforementioned hole for filling. The semiconductor wafers 33, 20, and the like 35 are sealed. After lowering the lower mold 47 and opening the upper mold, the unloader 48 takes out the lead frame 36 with the resin fork sealed from the lower mold 47 and transfers it to the double crocodile unit 49 ° The double bell mouth unit 49 is carried by The resin-sealed lead frame 36 separates the product 37 from the resin only, and discards unnecessary portions 38. 13 ★ Furthermore, the picking unit 50 transfers the products 37 on the double crocodile mouth unit 49 to the membrane separation unit 51. The film peeling unit 51 peels the film 30 of the product 37 attached to the lead frame 31. The peeling operation of the film 30 may be, for example, a method in which a tongue piece extending from one end of the film 30 is clamped by a film chuck unit (not shown) and peeled from the bottom of the product. In addition, a notch portion (not shown) may be provided in a part of the lead frame 31, and the film 30 exposed from the notch portion may be grasped and peeled off from the lower surface of the product. Then, the pick-up unit 50 transfers and deposits the product 37 of the peeled film 30 on the output buffer unit 52. The second embodiment of the present invention is shown in Figs. 7A and 7B, and is substantially the same as the first embodiment. The difference is that the semiconductor device is divided into a plurality of semiconductor devices (Fig. 7B), and it is different from the first embodiment in that all semiconductor devices are arranged at a certain interval (Fig. 6A). According to this embodiment, as shown in FIG. 7A, the position restricting protrusions 28 'are formed on the top surface of the recess 25a of the upper holder 25, and clamping protrusions are formed to clamp a plurality of the semiconductor devices, respectively. 29. According to this embodiment, since the floating of the lead frame 31 can be effectively restricted, it has the advantage that it can be more closely integrated with the lead frame. The third embodiment is applied to a lead frame 31 having a lead 34 having a shape different from that of the second embodiment, as shown in Fig. 8. The same number is attached to the same part and the description is omitted. However, 31b indicates a tangent line, and 28a indicates a boundary line of a region pressed by the position restricting projection 28 (Fig. 8B). However, the semiconductor wafer is not shown. The fourth embodiment is shown in FIG. 9 when a lead frame 31 having the same shape as that of the third embodiment 200402128 is used. The difference is that the upper clip 21 is provided with a plurality of crotch vent holes 23 connected to each other. Ventilation groove 23a (shown in cross section). The vent groove 23a is located below the free end of the lead 34 before cutting in the lead frame 31, and is formed continuously. 5 According to this embodiment, by switching the gas return flow of the vent hole 23 of the crotch from negative pressure to positive pressure, the film 30 can be reliably adhered to the free end edge of the lead wire 34 before cutting. Therefore, the resin can be prevented from spreading to the back surface of the lead 34 during the resin sealing, and the contact failure can be prevented more reliably. The fifth embodiment of the present invention, as shown in Fig. 10, is substantially the same as the aforementioned 101st embodiment. The difference is that the heating body 17 is arranged in the next step of the film adhering step. In the fifth embodiment, the film 30 and the lead frame 31 adhered by the aforementioned steps are placed on a heating body 17 and heated. Therefore, there is an advantage that the film 30 and the lead frame 31 can be adhered more firmly. 15 A sixth embodiment of the present invention is shown in Fig. 11 in which the tape attaching device 10 is a type that can move completely independently. In this embodiment, the same steps are performed until the film 30 and the lead frame 31 are integrated together. Then, the lead frame 31 integrated with the film 30 is heated by the heating body 17, and then transported to a lead frame output unit 19, 20 by a conveyor or the like and stored in an empty box 19a. In the sixth embodiment, resin sealing is performed by an automatic resin sealing device or a manual pressure device. In addition, in this embodiment, the heating body 17 is not necessarily required, and it is possible to select whether or not to heat the film according to the use. According to this embodiment, the film sticking device 10 can be operated independently. Therefore, the installation position of the device in the factory can be freely selected, which has the advantage of increasing the degree of freedom in the installation space. In the foregoing embodiment, 'the method of attaching the film 30 and the lead frame 31 in a state of supplying air and pressurizing, the method of attaching the film 30 and the lead frame 31 in a state of inhaling and reducing pressure, After the film 30 and the lead frame 31 are attached by suction and air supply, and the film 30 and the lead frame 31 are adhered by suction and air supply, the adhesive force of the film is increased by heating to make the film and lead frame more A method of firmly adhering. In addition, in clamping the upper and lower clamps, the lower and upper clamps can be heated, while the two clamps can be adhered under the condition of supplying air to the lower clamp and being pressurized, or a 10 or lower clamps can be heated, while the The upper clamp body is inhaled and decompressed to integrate the two together. According to this method, it is possible to efficiently and space-savingly integrate the film and the lead frame. Advantageous Effects of Invention According to the present invention, if the gas return 15 from the vent hole in the lower clip body is switched from negative pressure to positive pressure, the film can be pressed against the substrate with air pressure without damaging the semiconductor wafer and wires. . Therefore, the film system is uniformly adhered to the substrate 'and is integrated with each other. As a result, even if the resin is sealed, the resin does not spread under the substrate, and a good semiconductor device is obtained. [Brief description of the drawings] Fig. 1 is a plan view of a semiconductor resin sealing device according to a first embodiment of the present invention. Fig. 2 is a sectional view showing a film sticking device according to a first embodiment of the present invention. Fig. 3 is a diagram showing the film attaching steps following Fig. 2; 200402128 Fig. 4 is a diagram showing the film attaching steps following Fig. 3. Fig. 5 is a diagram showing the film attaching steps following Fig. 4; Fig. 6A is a plan view showing the supporting area of the lead frame, and Fig. 6B is an enlarged view of a part of Fig. 6A. 5 FIG. 7A is a cross-sectional view showing the film attaching step of the second embodiment, and FIG. 7B is a top view showing the supporting area of the lead frame. Fig. 8A is a plan view showing the supporting area of the lead frame of the third embodiment, and Fig. 8B is a cross-sectional view showing the film attaching device. Fig. 9A is a top 10 view showing the supporting area of the lead frame of the fourth embodiment, and Fig. 9B is a cross-sectional view showing the film attachment device. Fig. 10 is a plan view of a semiconductor resin sealing device according to a fifth embodiment of the present invention. Fig. 11 is a plan view of a semiconductor resin sealing device according to a sixth embodiment of the present invention. 15 FIGS. 12A, 12B, and 12C are explanatory diagrams showing a resin sealing step of a conventional semiconductor device. 13A and 13B are a plan view and a cross-sectional view showing a resin sealing method of a conventional semiconductor device. 14 and 14B are a plan view and an enlarged cross-sectional view of a sealing method of a resin 20 of another semiconductor device according to a conventional example. [Representative symbol table of the main components of the drawing] 10 ... film attaching device 11 ... film supply unit 12 ... input cassette buffer unit 17 200402128 13 ... cassette 14. lifting unit 15 .... standby table 16 ... picking With the pressurizing unit 17. The heating body 18 ... the conveying device 19. The lead frame output unit 19a ... the empty 20. The film attaching unit 21. The lower clip 21a ... recess 22.23. . Ventilation hole 23a ... Ventilation groove 25 .. Upper clip body 25a ... Recess 25b ... Ventilation hole 26 ... Sliding shaft 27 .. Holding claw 28 .. Restriction protrusion 28a. .. Boundary line 29 .. Clamping protrusion 30 .. Film 31 .. Lead frame, substrate 31b ... Tangent 200402128 32. Die holder 33 .. Semiconductor wafer 34. Lead 35 .. Leads 36 ... Resin sealed lead frame 37 ... Product 38 .. Unwanted part 40 ... Resin sealing device 41 ... Lead frame transfer unit 42 ... Inner loader 43 ... Preheating unit 44 ... Ingot Conveyor 45 ... Ingot 46 ... Pressing unit 47 ... Lower die 48 ... Unloader 49 ... Double-crocodile unit 50 ... Picking unit 51 ... Film peeling unit 52 ... Output buffer unit